ProceedingsoftheCSEE報(bào)?2022Chin.Soc.forElec.Eng.於少林，張興，王佳寧*，吳馥晨，王琛，劉元?jiǎng)εc自動(dòng)化工程學(xué)院，安徽省合肥市230009)rchontheDesignofLaminatedBusbarBasedonDiscreteDevicesinParalleltotheSiliconCarbideInvertereringandAutomationHefeiUniversityofTechnologyHefeiAnhuiProvinceChinaABSTRACT:Forthesiliconcarbide(SiC)invertersbasedonthesolutionofdiscretedevicesinparallel,thelaminatedbusbarneedstomeetthedesignobjectivesoflowparasiticinductance,externalcircuitsymmetry,anddevicetemperaturebalance.However,mostoftheexistingdesignsolutionsforthebusbarareaimedatthepowermodule,andthereisalackofasystematicdesignapproachforthebusbarwiththediscretedevicesinparallel.Firstly,thethree-dimensionalstructuralcharacteristicofthelaminatedbusbarwaspresentedtakingtheparallelconnectionoftwodevicesasanexample.Then,amodelinganddecouplingmethodfortheparasiticinductancewasproposedtoprovideabasisforevaluatingthevalueandsymmetryoftheparasiticinductance.Finally,byusingtheparametricsimulationofAnsysQ3D,thedifferentdevicelayoutsandkeyphysicaldimensionswereoptimized,andsomedesignprincipleswereconcluded.Basedontheabovemethods,alaminatedbusbarwithsixdevicesinparallelwasdesigned.Thefinalsimulatedandexperimentalresultsverifythatthebusbarmeetstheobjectivesoflowparasiticinductance,symmetryoftheexternalcircuit,anddevicetemperaturebalance.KEYWORDS:siliconcarbide(SiC)inverters;discretedevicesinparallel;thelaminatedbusbar;parasiticinductancesKZS劃(BP0719039).ProjectSupportedbyNationalNaturalScienceFoundationofChina(52077051);InstituteofEnergy，HefeiComprehensiveNationalScienceCenter(21KZS203);ProgramofIntroducingTalentsofDisciplinetoUniversities(BP0719039).動(dòng)汽車逆變器的綜合性能[5-7]。可分為功率模塊式方案[8-10]和多分立器件并聯(lián)式方第10期於少林等：基于分立器件并聯(lián)型碳化硅逆變器的疊層母排設(shè)計(jì)研究3739UVWD HAC LSUVWD HAC LSSSSSTTUUVWDHnTHn HnDLnTLnLn H1DL1DH1TH1TL1L1AC(a)功率模塊(b)基于TO247封裝的分立器件撲Fig.1Theinvertertopologybasedonthesolutionsofduleordiscretedevicesinparallel聯(lián)型方案可通過增減并聯(lián)器件的數(shù)目來改變電流方案，已有大量文獻(xiàn)對(duì)其疊層母排結(jié)構(gòu)進(jìn)行了研帶來不對(duì)稱的寄生電感進(jìn)而使電流在并聯(lián)器件間案中的疊層母排設(shè)計(jì)也需要確保所并聯(lián)的器件能需終提取出的多維電感矩陣包含了各支路的自感和式以及母排結(jié)構(gòu)設(shè)計(jì)的優(yōu)劣性。文獻(xiàn)[36]建立了疊快速評(píng)估母排的電感量。文獻(xiàn)[37]在各并聯(lián)支路中本文針對(duì)分立器件并聯(lián)型疊層母排缺乏系統(tǒng)1.1疊層母排與分立器件連接形式中國(guó)電機(jī)工程學(xué)報(bào)第42卷DLSL1TH1TL1TH2TL2散熱器Y交流母排iCMOSFETsDLSL1TH1TL1TH2TL2散熱器Y交流母排iCMOSFETs極端子與交流端相連，而功率源極端子與負(fù)極相臂單管相連以構(gòu)成完整的橋臂電路。對(duì)于功率模排表面開槽，各導(dǎo)電層伸出對(duì)應(yīng)的端子與器件pin交流母排SH1SDH1母排正母排FigTheconnectionofdiscretedevicesandlaminatedbusbar1.2器件在疊層母排中的布局分立器件在空間維度的對(duì)稱布局有利于實(shí)現(xiàn)(a)對(duì)稱型排列nnn(b)直線型排列FigThelayoutsofdiscretedevicesinparallel缺點(diǎn)在于散熱器面積會(huì)比較大，不利于緊湊型設(shè)TTL1TL2TH1散熱器TH2a形式1a形式1FigThelayoutsofdiscretedevicesontheheatsink散熱器兩側(cè)便于實(shí)現(xiàn)各并聯(lián)支路寄生電感的對(duì)稱ZX母排正母排驅(qū)動(dòng)板 驅(qū)動(dòng)板散熱器FigBasic3Dstructureofthelaminatedbusbar第10期於少林等：基于分立器件并聯(lián)型碳化硅逆變器的疊層母排設(shè)計(jì)研究3741C4Mp1p2Ln1n1Ln2n2La1a1Mp1b1ACLa2a2Mp1a1Lp1p1Mp1a2Mp1b2Mp1n2Lp2p2C4Mp1p2Ln1n1Ln2n2La1a1Mp1b1ACLa2a2Mp1a1Lp1p1Mp1a2Mp1b2Mp1n2Lp2p2Lb1b1Lb2b2Mp1n1正母排TH2交流母排母排32TL1TL2C2分立器件并聯(lián)型疊層母排寄生電感建模有效方法對(duì)不同布局方式和結(jié)構(gòu)下疊層母排寄生2.1并聯(lián)支路電流路徑分析此首先對(duì)分立器件并聯(lián)型疊層母排的電流路徑進(jìn)FigTheanalysisofthecurrentpathsonlaminatedusbarsintheswitchingtransient2.2并聯(lián)支路寄生電感建模C p pFigTheparasiticinductancemodelforthelaminatedwithdiscretedevicesinparallel數(shù)目的增多而增多，因此該電感網(wǎng)絡(luò)也會(huì)更加復(fù)件并聯(lián)型疊層母排各并聯(lián)支路的等效寄生電感進(jìn)2.3并聯(lián)支路等效電感的提取為u=Li(1)分別為a2ua1uuba2H1iiH2iLH1Mp1p2Lp2p2Ma1p2Ma2p2Mb1p2Mb2p2Mn1p2Mn2p2Mp1a1Mp2a1a1a1a1a2a1MMb1a1Mb2a1n1n1a1n2a1Mub2un1un2]TiL2iL1iL2]TMp1a2Mp2a2a1a1a2a2a2LMb1a2Mb2a2n1n1a2n2a2MMp1b1Mp2b1a1a1b1a2b1MLb1b1Mb2b1n1n1b1n2b1MMp1b2Mp2b2a1a1b2a2b2MMb1b2Lb2b2n1n1b2n2b2MMp1n1Mp2n1a1a1n1a2n1MMb1n1Mb2n1n1n1n1n2n1MMp1n2Mp2n2a1a1n2a2d2MMb1n2Mb2n2n2n2n2n2n2L]||中國(guó)電機(jī)工程學(xué)報(bào)第42卷iHLiHLii++up1up2一iH1uH1ua1ua2一+一一++ ub1ub2 一L1uL1一++ un1un2 一一一iiiiH2L2+uH2+uL2Fig.8Schematicforthederivationofequivalentinductance0Lp200000000a1a100000000a2a200000000Lb100000000Lb200000000n1n10Ln2」Ln2」00000QD小或|(3)|(3)AT|iH2|=iL「uH1]||Au=|uH2|uL1|A其中系數(shù)矩陣A為A010010010010000100000000|||0010000100100]0000ALAT=(6)系滿足式(7)，同時(shí)橋臂電壓因并聯(lián)關(guān)系可表達(dá)成「iH1]「10]「uH1]||=|聯(lián)立式(6)—(8)，即可得到式(9)。式(9)的推導(dǎo)|iL1||0|iL1||00]110]L=ALATs式(9)給出了各并聯(lián)支路電流與總電流的比例該方法首先依據(jù)原始多維電感矩陣與解耦后的等文獻(xiàn)[18]提出減少母排電流方向的長(zhǎng)度，增加第10期於少林等：基于分立器件并聯(lián)型碳化硅逆變器的疊層母排設(shè)計(jì)研究3743 n pDL1 LDL2 LSH1ADH1CSH2DH21pCDL1 n pDL1 LDL2 LSH1ADH1CSH2DH21pCDL1 LCDL2 LSH1ADH1CSH2DH2B1yp 24d3 n CdDL11DL2 LSL2y=ypSACp HDdDH2CCSSASSdCSS3.1電容正負(fù)端子以及橋臂器件位置類布局中，電容正負(fù)端子連線與器件端子垂直。AC nCC pCSSDH2 HSSDL2 LSH1ADH1ACSL1ADL1 2(a)A類布局CSSDH2 HpSCpSDL2 LSH1ADH1CSL1DL1B2(b)B類布局Fig9ThemainlayoutsofcomponentsonthebusbarQD種布局耦計(jì)算方法可得到各支路的等效電感矩陣Le。各支路等效電感Lp10011001100]||||111111(10)通過上述流程得到的結(jié)果如圖10所示。在寄B505LLp1Lp2A1A2B1B2式Fig10Comparisonoftheparasiticinductanceforourlayouts3.2關(guān)鍵物理尺寸尋優(yōu)是影響各并聯(lián)支路寄生電感的關(guān)鍵參數(shù)。在Q3Dwx0xThekeyphysicaldimensionsLpi/nHLpi/nHLpi/nHLpLpi/nHLpi/nHLpi/nHLpi/nHLpi/nHLpi/nHCn1Cp1Cn2Cp2DL1 LDL2 LSH1ADH1CSH2DH2子SS中國(guó)電機(jī)工程學(xué)報(bào)第42卷Lp2Lp2Lp2Lp1LpLp1400808120d1/mm120d1/mm0d2/mmLp2Lp1LpLp1Lp18880204060020406080d2/mmd3/mmLp2Lp140Lp2Lp1406080wmmLp18880200p/mm(f)交流出線端子位置p響Fig.12Theeffectofkeyphysicaldimensionsoneparasiticinductance并聯(lián)支路電感隨著d4的增大而增大。因此在設(shè)計(jì)w生電感幾乎無影響。這是因?yàn)榕c交流母排連接的上下橋臂端子間的距離主要由d6)交流出線端子p的位置：交流母排伸出出線端子與負(fù)載相連。在圖11中，使p點(diǎn)沿著y=yp流母排出線端子的位置對(duì)并聯(lián)支路的電感影響3.3電容端子數(shù)量對(duì)寄生電感影響本節(jié)探究電容端子數(shù)對(duì)疊層母排寄生電感的支路對(duì)應(yīng)的電容與器件端子間的電流路徑隨著端Cn1Cp1Cn2Cp2Cn3Cp3SSDL1 LSSDL2 LSH1ADH1CSH2DH2子(a)多對(duì)電容端子并聯(lián)示意圖865101520253035405d2/mmFigTheeffectofthenumberofterminalsusedtoecttocapacitorsontheparasiticinductance4.1疊層母排結(jié)構(gòu)與樣機(jī)第10期於少林等：基于分立器件并聯(lián)型碳化硅逆變器的疊層母排設(shè)計(jì)研究3745器件與散熱器ink Sink3器件與散熱器ink Sink3T并聯(lián)器件個(gè)數(shù)以靈活擴(kuò)展系統(tǒng)功率。圖14(b)為六交流輸出和電容相連和上橋臂器件相連和下橋臂器件相連(a)單相母排結(jié)構(gòu)疊層疊層母排電容模組b并聯(lián)型SiC樣機(jī)FigThelaminatedbusbarandtheprototype4.2仿真驗(yàn)證D設(shè)置相應(yīng)的激勵(lì)源(source)和匯(sink)，從而提取疊多個(gè)電流源(source)。如按照正常的電流流向賦激勵(lì)，則無法進(jìn)行仿真。根據(jù)文獻(xiàn)[36]，可對(duì)疊層母圖15所示。對(duì)于最終仿真得到的電感矩陣，只需將該通入反向電流的母排支路與其他母排支路的交流母排ink正母排負(fù)母排DFig.15TheexcitationassignmentofthesimulationmodelinQ3D經(jīng)過取反處理并通過解耦計(jì)算得到的母排各并聯(lián)lentinductanceofthebusbarwithedLpLaLLbLnLLtotal1479028777378497577697在分立器件并聯(lián)型疊層母排設(shè)計(jì)的關(guān)鍵物理液冷散熱器結(jié)構(gòu)如圖16所示，通過熱仿真軟件直流源ds1Lcap環(huán)路ALa1a1CLa6a6ACLb6b6...SL6Ln6n6Fig直流源ds1Lcap環(huán)路ALa1a1CLa6a6ACLb6b6...SL6Ln6n6FigThestructureofthewater-coolingradiatoriS中國(guó)電機(jī)工程學(xué)報(bào)第42卷示波示波器輔助電源控制板SiC逆變器WVU負(fù)載直流源上位機(jī)圖17所示，仿真中的芯片熱耗均設(shè)置一致，因此其溫度分布差異主要是由于其在散熱器中的位置這是因?yàn)橹虚g位置各管之間存在著較強(qiáng)的熱耦合6565123456.5進(jìn)水口進(jìn)水口efielddistributionoftheparalleledcesintheupperbridgearmofWphase4.3實(shí)驗(yàn)驗(yàn)證VLloop=ovier(11)tFig8TheplatformofthedoublepulsetestPPLp1p1LLp1p1Lp6p6 H1S H H1S++一Lb1b1SL1LLn1n1NFigThecorrespondingtestedcircuits電壓Vd1。同時(shí)將ds則會(huì)產(chǎn)生對(duì)應(yīng)的過電壓Vds1，該回路電感包含了入的電感(Lother)。當(dāng)測(cè)試正母排和交流母排端電壓Vd組電感(LC)，下橋臂tt第10期於少林等：基于分立器件并聯(lián)型碳化硅逆變器的疊層母排設(shè)計(jì)研究3747V(50V/格)I(20A/格)V(50V/格)I(20A/格)MOSMOSMOSMOSVVds1VIds1tt100ns/格)Fig.20Thedoublepulsetestwaveformsofhefirstbranch試中通過熱敏電偶來實(shí)現(xiàn)對(duì)各并聯(lián)器件的殼溫測(cè)edinductanceofthefirstbranchLH1=Lp1+La1(nH)isonofthetestedandcalculatedentinductanceoftheupperbridgearmLH/nH123456數(shù)據(jù)記錄儀測(cè)溫線(a)測(cè)溫線載側(cè)配電柜進(jìn)水口高低溫試驗(yàn)箱載箱水冷式冷水機(jī)載箱(b)溫升實(shí)驗(yàn)平臺(tái)Fig.21ThemeasurementforcasetemperatureoftheparalleldevicesLmin逆變器開關(guān)W器件測(cè)溫。MOSMOSMOS0000Fig.22ThecasetemperaturecurveofheparalleledMOSFETs中國(guó)電機(jī)工程學(xué)報(bào)第42卷5結(jié)論斷疊層母排設(shè)計(jì)的優(yōu)劣性提供依據(jù)。借助于Q3D[2]GUZhanbiao，TANGJiacheng，ZHUWenming，etalComparisonofwide-bandgapdevicesin1kV，3kWLLCconverters[J]．ChineseJournalofElectricalewonsiliconcarbidepowerdevicestechnologiesnesenese硅電機(jī)控制器研究[J]．中國(guó)電機(jī)工程學(xué)報(bào)，2019，onhighpowerdensitySiCmotordrivecontrollereseinvertersusingamultilevelconvertercomposedoflowEETransactionsonPowerbandgapdevicesinACelectricdrives：opportunitiesandDAonanddesignofSiCBasedhighpowerdensityinverter，70kW/liter，50kW/kg[C]//Proceedingsofthe2016IEEE8thInternationalPowerCinverterforelectricvehicletractiondrives[C]//Proceedingsof2017IEEEAppliedPowerElectronicsConferenceandExposition．Tampa：IEEE，2017：742．nmethodologyforaplanarizedhighpowerdensityEV/HEVtractiondriveusingSiCpowermodules[C]//Proceedingsof2016IEEEEnergyConversionCongress[11]陳茜兵．驅(qū)動(dòng)電機(jī)IGBT單管并聯(lián)方案控制及應(yīng)用CHENXibing．ControlandapplicationofIGBTsingle-tubeparallelconnectionschemefordrivingmotorP．Parallel-operationofdiscreteSiCBJTsinaconverterJIEEEics-2491．[13]趙陽．電動(dòng)汽車碳化硅逆變器設(shè)計(jì)[D]．長(zhǎng)沙：湖南大Jandimplementationofintelligentpowerunitfordiscrete2-47(inChinese)．第10期於少林等：基于分立器件并聯(lián)型碳化硅逆變器的疊層母排設(shè)計(jì)研究3749eprofileorientedlifetimeassessmentofSiCinverterforMOSFETscurrentdistribution[J]．Semiconductoreismatchesonautomotivetractiondrives，opportunitiesandchallengesparallelingsiliconcarbideMOSFETs[J]．IEEEBandgapPowerDevicesandApplications．Albuquerque：[26]曾正，邵偉華，胡博容，等．基于耦合電感的SiCpotentialimpactofusingtractioninverterswithSiCZENGZheng，SHAOWeihua，HUBorong，etal．ActiveYUShaolinZHANGXingWANGJianingEffectofkeyforthelaminatedbusbarconnectedwithparalleledSiCphysicalstructuresonlaminatedbusbarinductanceofMOSFETs[J]．IEEETransactionsonCircuitsandSystemss[19]CALLEGAROAD，GUOJing，EULLM，etal．Busbarcurrentanalysisanditssuppressionmethodologyfordesignforhigh-powerinverters[J]．IEEETransactionsonparallelSiCMOSFETswithaidofadifferentialmodeEBBusingZHAOChengWANGLailiZHANGFanEffectof1.7kV，400aSiCMOSFETsoperatingat100kHz[C]//asymmetriclayoutandunequaljunctiontemperatureonProceedingsof2016IEEEEnergyConversionCongresscurrentsharingofparalleledSiCMOSFETswithZHUJunjie，YUANJingxin，NIEZiling，etal．Optimuminparalleledapplications[C]//Proceedingsof2014IEEEdesignofplanerbusbarbasedonall-siliconcarbidepowerAppliedPowerElectronicsConferenceandoflowinductivebusbarforfastswitchingSiCmodules并聯(lián)功率模塊不均流研究[J]．電源學(xué)報(bào)，2019，17(4)：verifiedby3DFEMcalculationsandlaboratory193-200．measurements[C]//Proceedingsofthe2016IEEE17thMAJianlin，WANGLi，RUANLigang．ResearchonWorkshoponControlandModelingforPowercurrentimbalanceinparallelingSiCMOSFETmulti-chipEuropeanConferenceonPowerElectronicsand1826-1836．namic[24]黃華震，柯俊吉，孫鵬，等．寄生電感不匹配對(duì)SiCcurrentsharingofmultichipSiCmodulewithoptimal中國(guó)電機(jī)工程學(xué)報(bào)第42卷KVAthreephaseNPCthree-leveluniversalinvertermodulewithspecificallydesignedbusbarCProceedingsoftheTwentyFifthAnnualIEEEAppliedPowerElectronicsConferenceandZHANGNing，WANGShuo，ZHAOHui．DevelopparasiticinductancemodelfortheplanarbusbarofanerJIEEETransactionssoflaminatedbusbartoreducetransientvoltagespike[C]//Proceedingsof2012IEEEInternationalSymposiumonal．Partialstrayinductancemodelingandmeasuringofasymmetricalparallelbranchesonthebus-barofelectricK．Multi-branchinductanceextractionprocedureformulti-chippowermodules[C]//Proceedingsofthe2016IEEE4thWorkshoponWideBandgapPowerDevicesand[38]於少林．中大功率光伏系統(tǒng)共性結(jié)構(gòu)寄生參數(shù)分析ofparasiticparametersofcommonstructureinmedium&highpowerphotovoltaicsystemsnologyinese的功率模塊熱阻抗物理模型[J]．中國(guó)電機(jī)工程學(xué)報(bào)，thermalimpedancemodelforpowermodulebyanalyticesbasedheatspreadingangleJProceedingseofalowparasiticinductanceSiCpowermodulewithdouble-sidedcooling[C]//Proceedingsof2017IEEEAppliedPowerElectronicsConferenceandlowinductancepowermodulepackageJIEEE7-4166．L=ALATsA10011001將式(A3)代入式(8)：(A3)「1|「1||||0L100]01001(Ls)一1|A式(A1)中，即得式(9)：||||||||0]000100012-03-28。-07-04。方向?yàn)樾滦凸β势骷庋b與應(yīng)用、電力電；研究方向?yàn)殡娏﹄娮与娏鲃?dòng)、新能源發(fā)鮮艷)ExtendedSummaryDOI：10.13334/j.0258-8013.pcsee.211449ThecasetemperatureofdevicesTe/CHeatsinkYZXThecasetemperatureofdevicesTe/CHeatsinkYZXUACoutputWntheDesignofLaminatedBusbarBasedonDiscreteDevicesinaralleltotheSiliconCarbideInverterngineeringandAutomationHefeiUniversityofTechnologyKEYWORDSsiliconcarbideSiCinvertersdiscretedevicesinparallel;thelaminatedbusbar;parasiticinductancesAtthisstage,theSiliconCarbide(SiC)powermoduleshavedisadvantagesinhighcost,incompatiblepackages,andlowavailability.While,thediscretedevicesaremostlybasedonstandardpackages,withhighproductionvolumeandlowercost.ItismeaningfultodevelopSiCinvertersbasedonthetechnologyofdiscretedeviceinparallel.InmediumandhighpowerSiCinverters,thelaminatedbusbarisusuallyusedastheinterconnectioncarrierforbuscapacitorsandpowerdevices.Thispaperinvestigatesthedesignmethodofthelaminatedbusbarwiththeaimoflowparasiticinductance,externalcircuitsymmetryandtemperaturehomogeneity.Basedonthemethod,alaminatedbusbarstructureforSiCinverterswithsixdiscretedevicesinparallelisfinallydesigned.Firstly,takingtwodevicesinparallelasanexample,thestructuralcharacteristicsofthelaminatedbusbarareanalyzed.Themainlayoutofthepowerdevices,thecapacitor,theheatsinkandthedriverboardisdetermined,asshowninFig.1.Then,thebusbarparasiticinductanceismodeledandanalyzed,sothattheequivalentparasiticinductanceofeachparalleldevicescanbequicklyextractedfromthecomplexinductancenetwork.Itcanprovideabasisforestimatingtheinductancevalueandthesymmetrydesignofbusbars.Finally,AnsysQ3Disusedtoextractthebusbarparasiticinductancenetwork.