版權(quán)說明:本文檔由用戶提供并上傳,收益歸屬內(nèi)容提供方,若內(nèi)容存在侵權(quán),請進行舉報或認領(lǐng)
文檔簡介
AnalysisofOpticalAbsorptioninNanowireArraysforPhotovoltaicApplications2013-11-7WangWeiping1.Finite-differencetime-domain(FDTD)simulations
Transfermatrixmethod(TMM)
AnalysisofOpticalAbsorptionin
SiliconNanowireArraysforPhotovoltaic
ApplicationsApsorption=1-Refectance-TransmittanceGeometricparameters:Diameter,Length,FillingratioFrequencyrange:1.1~4eVFixeddiameter:50nmInhigh-energyphotonregime,theabsorptionreachesaplateauregionsharedby
alllengthsInlow-energyphotonregime,theabsorptioninthefilmismoreefficient.thereflectanceofnanowiresissignificantlylowerthanthatofthethinfilmintheentirespectralrangeForlowfrequencies,theextinctioncoefficientof
siliconissmallandinterferenceeffectsexist,resultingintheoscillationofreflectanceandtransmittanceFixedperiod:100nm,wirelength:2.33umTheelectromagneticinteractionbetweennanowirescannotbeneglected!Ultimate
efficiencyORTheabsorptionefficienciesare5.80%,
9.47%,12.50%,and15.50%forthe50,65,and80nm
nanowiresandthethinfilm,respectively.Puttingaperfect
reflecting
mirror(100%reflectivity)onthebacksidetheoverallabsorptanceefficiencyisenhancedfrom12.50%to16.09%a=100nm,diameter=80nm,length=2.33umthenanowirestructureisalmostisotropicinthex-yplaneTEpolarizationhaslowerabsorptionthanTMpolarizationbecausethelatterhasanelectricfieldcomponentalongthewireaxiswhichfacilitatestheabsorptionCONCLUSION:smallreflectioninawidespectrumrangeinthelow-frequencyregime,applylight-trappingtechniquesoruselongerwiresAnalysisofopticalabsorptioninGaAsnanowire
arraysAperfectrefractiveindexmatchingatthetopinterface
betweentheairandNWAs,henceleadstogoodcouplingoftheincidentlightintotheNWAsFixedD/P:0.5,diameters:60~240nm1.ThelightabsorptionissignificantlyenhancedbytheincreaseofNWdiametersfrom60to180nminthelongwavelengthregion(photonicresonancemode).2.Diameterupto240nmleadstoadecreaseinabsorptionefficiency(enhancedlightreflectionatthetopsurfaceoftheNWAs).3.nanowireactsasananoscalecylindricalresonatorwhichcantraplightbymultipletotalinternalreflections.Theopticalgenerationrate:D/P=0.5,Length=2um,diameter=180nm,wavelength=800nm.1.Atanglesofincidenceupto60°,thetotalabsorptionismaintainedabove80%forbothTEandTMpolarizations.2.AhigherabsorptionisobservedinTMpolarizationthaninTEpolarizationConclusion:Theoptimalresultsforthenormalincidenceareevaluatedasdiameter=180nm,length=2μm,andD/P=0.5.2.Mieresonancetheory
length=2.5um,diameter=425nmshort-circuitcurrent:256pA,opencircuitvoltage:0.43,fillingfactor:0.52photogeneratedcurrentdensityof180mA/cm2maximumpower:57pw;efficiency:40%Methods-nanowiregrowthNanowiresweregrownonoxidizedSi(111)with100nmaperturesusingaself-catalysedmethodThep-dopingofthecorewasachievedbyaddingafluxofberylliumduringaxialgrowthThen-typedopingwasobtainedbyaddingsilicontothegrowthstepDevicefabricationSU-8wasspunontothesubstrateat4,000r.p.m.for45sandcuredwith1minultravioletlightand3minonahotplateat185oCAnetch-backwitha1–3minoxygenplasmaetchwasthenperformedtofreethenanowiretipThetopcontactwasdefinedbyelectron-beamlithographyfollowedbyevaporationofindiumtinoxide(ITO)Thebottomcontactwasobtainedbysilvergluingtotheback-sideofthewaferOpticalsimulationsofasinglenanowiresolarcellTheabsorptioncross-sectionisdefinedasTheabsorptioncross-sectioninnanoscalematerialsislargerthantheirphysicalsizeThelargestabsorptionisforananowirediameterof380nmExternalquantumefficiency(EQE)andScanningphotocurrentmeasurementsTheabsorptionboostinthedeviceisduetoanunexpectedlylargeabsorptioncross-sectionoftheverticalnanowiregeometryConclusionAremarkableboostinabsorptionisobservedinsingle-nanowiresolar
cells
thatisrelatedtotheverticalconfigurationofthenanowiresandtoaresonantincreaseinthe
absorptioncross-section.Theseresultsopenanewroutetothird-generationsolarcells,localenergyharvestersonnanoscaledevices
andphotondetectors.ScatteringefficienciesofMie
calculationstransversalmagnetic(TM)polarizationtransversalelectric(TE)polarizationnon-polarizedAbsorptionandScatteringofLightbySmallParticlesBohrenCFandHuffmanDR1998Opticalscattering
properties
of
GaAs
NWsCalculated
scattering
efficienciesQsca(red
lines)and
scaled
measuredspectra(blacklines)Leaky-moderesonances(LMRs)Thisworkshowsthatlight
absorptioninnanowiredevicesisnotjustafunctionofthe
intrinsicopticalmateri
溫馨提示
- 1. 本站所有資源如無特殊說明,都需要本地電腦安裝OFFICE2007和PDF閱讀器。圖紙軟件為CAD,CAXA,PROE,UG,SolidWorks等.壓縮文件請下載最新的WinRAR軟件解壓。
- 2. 本站的文檔不包含任何第三方提供的附件圖紙等,如果需要附件,請聯(lián)系上傳者。文件的所有權(quán)益歸上傳用戶所有。
- 3. 本站RAR壓縮包中若帶圖紙,網(wǎng)頁內(nèi)容里面會有圖紙預覽,若沒有圖紙預覽就沒有圖紙。
- 4. 未經(jīng)權(quán)益所有人同意不得將文件中的內(nèi)容挪作商業(yè)或盈利用途。
- 5. 人人文庫網(wǎng)僅提供信息存儲空間,僅對用戶上傳內(nèi)容的表現(xiàn)方式做保護處理,對用戶上傳分享的文檔內(nèi)容本身不做任何修改或編輯,并不能對任何下載內(nèi)容負責。
- 6. 下載文件中如有侵權(quán)或不適當內(nèi)容,請與我們聯(lián)系,我們立即糾正。
- 7. 本站不保證下載資源的準確性、安全性和完整性, 同時也不承擔用戶因使用這些下載資源對自己和他人造成任何形式的傷害或損失。
最新文檔
- 2026年貴州護理職業(yè)技術(shù)學院單招職業(yè)技能測試題庫含答案詳解
- 2026年伊犁職業(yè)技術(shù)學院單招職業(yè)適應性測試題庫及答案詳解1套
- 2026年山西藝術(shù)職業(yè)學院單招綜合素質(zhì)考試題庫及答案詳解1套
- 2026年廣東機電職業(yè)技術(shù)學院單招綜合素質(zhì)考試題庫參考答案詳解
- 2026年四川工商職業(yè)技術(shù)學院單招職業(yè)技能測試題庫及完整答案詳解1套
- 2026年浙江萬里學院單招職業(yè)傾向性測試題庫帶答案詳解
- 2026年蘭州現(xiàn)代職業(yè)學院單招職業(yè)適應性測試題庫及答案詳解1套
- 2026年吉林科技職業(yè)技術(shù)學院單招職業(yè)傾向性測試題庫參考答案詳解
- 2026年廣西演藝職業(yè)學院單招職業(yè)技能考試題庫及參考答案詳解一套
- 2026年湖南九嶷職業(yè)技術(shù)學院單招職業(yè)適應性測試題庫含答案詳解
- 服裝色彩搭配知到智慧樹期末考試答案題庫2025年青島職業(yè)技術(shù)學院
- 檢測框架合作協(xié)議書范本
- 連接器設計手冊
- 工程銷售經(jīng)理年終總結(jié)
- 畢業(yè)設計(論文)-手機支架沖壓模具設計
- 因果關(guān)系表示增強的跨領(lǐng)域命名實體識別
- 貴州貴陽市普通中學2024-2025學年高一上學期期末監(jiān)測歷史試題(含答案)
- 網(wǎng)絡直播承諾書范本范本
- 壓力容器應急預案演練方案
- 痔瘡個案護理
- GB/T 10069.3-2024旋轉(zhuǎn)電機噪聲測定方法及限值第3部分:噪聲限值
評論
0/150
提交評論