磁性外延納米異質(zhì)結(jié)中自旋相關(guān)輸運(yùn)行為的研究摘要：

磁性外延納米異質(zhì)結(jié)作為一種可調(diào)節(jié)磁性和輸運(yùn)行為的新型材料，已經(jīng)引起了廣泛的關(guān)注。其中，自旋相關(guān)性質(zhì)作為其研究熱點(diǎn)之一，對于實(shí)現(xiàn)自旋電子學(xué)器件具有重要意義。本文以磁性外延納米異質(zhì)結(jié)為研究對象，通過實(shí)驗(yàn)和理論方法，研究了其自旋相關(guān)輸運(yùn)行為。首先，通過樣品制備和測試方法的介紹，得到了待研究樣品的基本性質(zhì)。其次，通過測量Hall效應(yīng)和磁電阻效應(yīng)等，對樣品的輸運(yùn)性質(zhì)進(jìn)行了探究。最后，通過自旋波測量和磁光學(xué)等方法，研究了樣品的自旋輸運(yùn)行為，并對其進(jìn)行了深入的討論。實(shí)驗(yàn)結(jié)果表明，磁性外延納米異質(zhì)結(jié)具有較好的自旋相關(guān)性質(zhì)，且其輸運(yùn)性質(zhì)可通過外界電場和磁場調(diào)控，為自旋電子學(xué)器件的應(yīng)用提供了新的思路和方法。

關(guān)鍵詞：磁性外延納米異質(zhì)結(jié)；自旋相關(guān)性質(zhì)；輸運(yùn)性質(zhì)；自旋電子學(xué)器件

Abstract:

Magneticepitaxialnano-heterostructures,asanewtypeofmaterialwithadjustablemagnetismandtransportproperties,haveattractedwidespreadattention.Amongthem,spin-relatedproperties,asoneoftheresearchhotspots,areofgreatsignificanceforrealizingspinelectronicsdevices.Inthispaper,magneticepitaxialnano-heterostructureswerestudiedastheresearchobject,andthespin-relatedtransportbehaviorwasstudiedthroughexperimentalandtheoreticalmethods.Firstly,thebasicpropertiesofthesampletobestudiedwereobtainedthroughtheintroductionofsamplepreparationandtestmethods.Secondly,thetransportpropertiesofthesamplewereexploredthroughmeasurementsofHalleffectandmagnetoresistanceeffect,etc.Finally,thespintransportbehaviorofthesamplewasstudiedbyspinwavemeasurementandmagneto-opticmethod,andin-depthdiscussionsweremade.Theexperimentalresultsshowthatmagneticepitaxialnano-heterostructureshavegoodspin-relatedproperties,andtheirtransportpropertiescanberegulatedbyexternalelectricandmagneticfields,providingnewideasandmethodsfortheapplicationofspinelectronicsdevices.

Keywords:Magneticepitaxialnano-heterostructures;Spin-relatedproperties;Transportproperties;SpinelectronicsdevicesInrecentyears,magneticepitaxialnano-heterostructureshaveattractedincreasingattentionduetotheirpotentialapplicationinspinelectronicsdevices.Tofullyexploittheirpotential,itisessentialtoinvestigatetheirspin-relatedpropertiesandtransportproperties.

Oneofthemethodsusedforstudyingspin-relatedpropertiesisspinwavemeasurement.Spinwavesarethecollectiveexcitationsofspinsinamagneticmaterial,andtheirmeasurementprovidesinformationaboutthestrengthanddirectionofthespininteraction.Spinwavemeasurementsofmagneticepitaxialnano-heterostructureshaverevealedthattheypossessstrongspin-relatedproperties,makingthempromisingcandidatesforspinelectronicsdevices.

Anothermethodusedforstudyingthesestructuresisthemagneto-opticmethod,whichinvolvesmeasuringthechangeinpolarizationoflightreflectedfromamagnetizedsurface.Thismethodcanprovideinformationaboutthemagneticdomainstructureandmagneticanisotropyofthestructure.Magneto-opticmeasurementsofmagneticepitaxialnano-heterostructureshaveshownthattheypossessexcellentmagneticanisotropy,whichcanbecontrolledbyanexternalmagneticfield.

Furthermore,studieshaveshownthatthetransportpropertiesofmagneticepitaxialnano-heterostructurescanberegulatedbyexternalelectricandmagneticfields.Thisabilitytomanipulatethetransportpropertiesmakesthemidealforuseinspinelectronicsdevices.

Inconclusion,magneticepitaxialnano-heterostructureshavedemonstratedstrongspin-relatedandtransportproperties,makingthempromisingcandidatesforspinelectronicsdevices.FurtherresearchanddevelopmentarenecessarytofullyexploittheirpotentialandpavethewayfornovelspintronicsapplicationsMagneticepitaxialnano-heterostructureshaveshowngreatpotentialinspintronics,buttherearestillmanychallengesthatneedtobeaddressed.Oneofthemainchallengesisdevelopingreliableandscalablemethodsforfabricatingthesestructures.Currentfabricationmethodsofteninvolvecomplexandexpensiveprocedures,leadingtolimitationsinthesize,complexity,andreproducibilityofthestructures.

Anotherchallengeismaintainingthestabilityandcoherenceofthespinsinthestructures.Spincoherencetimesarestronglyaffectedbyvariousfactorssuchasthermalfluctuations,spin-orbitcoupling,andinterfaceroughness.Developingtechniquestoreducetheseeffectsandincreasespincoherencetimesiscrucialforthedevelopmentofpracticalspintronicdevices.

Furthermore,theintegrationofmagneticepitaxialnano-heterostructureswithexistingelectronicandoptoelectronicdevicesremainsachallenge.Integrationrequiresthedevelopmentofcompatibleinterfacematerialsanddesignofappropriatearchitectures.

Finally,theexplorationofothermaterialsbeyondthecurrentlystudiedtransitionmetaloxidesandchalcogenidesisneededtofullyexploitthepotentialofmagneticepitaxialnano-heterostructures.Othermaterialssuchastopologicalinsulators,graphene-basedmaterials,and2Dlayeredmaterialsholdpromiseforfuturespintronicsapplications.

Inconclusion,whiletherearestillchallengestobeaddressed,magneticepitaxialnano-heterostructureshavealreadyshowngreatpromiseinspintronics.ContinuedresearchanddevelopmentwillfurtherexpandtheirpotentialandpavethewayfortherealizationofnovelspintronicdevicesSpintronics,orspinelectronics,isarapidlygrowingfieldofresearchthatseekstoexploittheinherentspinofelectronsforinformationprocessingandstorage.Oneofthekeytechnologiesinthisfieldismagneticepitaxialnano-heterostructures,whichconsistoflayersofmagneticallyactivematerialscarefullygrownontopofeachotherwithprecisecrystallographicalignment.Theseheterostructurescanexhibitarangeofinterestingmagneticandelectricalpropertiesthatcanbeexploitedforspintronicsapplications.

Theuseofepitaxialgrowthtechniquesiscriticalforachievingtheprecisecrystallographicalignmentrequiredfortheseheterostructurestoexhibitthedesiredproperties.Oneofthemostcommontechniquesforepitaxialgrowthismolecularbeamepitaxy(MBE),whichinvolvesthedepositionofatomsormoleculesontoasubstrateinultra-highvacuumconditions.TheuseofMBEallowsforprecisecontroloverthegrowthprocess,withtheabilitytogrowlayersasthinasasingleatomwithatomicprecision.

Themagneticpropertiesoftheseheterostructuresarisefromtheexchangeinteractionbetweentheelectronsinthedifferentlayers,whichcanbetailoredbyadjustingthethicknessandcompositionofthelayers.Forexample,theuseofmagneticmaterialswithdifferentmagneticmomentscanresultintheformationofamagnetictunneljunction,wheretheresistanceofthejunctiondependsontherelativeorientationofthemagneticmoments.Thispropertycanbeexploitedformemoryandlogicapplications,andhasalreadybeencommercializedinharddiskdrives.

Anotherinterestingpropertyofmagneticnano-heterostructuresisthespintransportthatcanoccuracrossthelayers.Inspintronics,spintransportreferstothemovementofspin-polarizedelectronsacrossadevice,whichcanbeusedtoencodeandprocessinformation.Magneticnano-heterostructurescanexhibitlongspinlifetimesandspindiffusionlengths,whichmakethempromisingcandidatesforspintransportapplications.

Onelimitationofmagneticepitaxialnano-heterostructuresisthattheytypicallyrequirelowtemperaturestomaintaintheiruniquemagneticproperties.Thiscanlimitthepotentialforpracticalapplications,asitcanbechallengingandexpensivetomaintainlowtemperaturesoverlargeareas.However,researchisongoingtodevelopnewmaterialsandtechniquesthatcanenabletheuseoftheseheterostructuresathighertemperatures.

Inadditiontomagneticmaterials,othermaterialssuchastopologicalinsulators,graphene-basedmaterials,and2Dlayeredmaterialsholdpromiseforfuturespintronicsapplications.Topo