鐵電材料鈦酸鉛(PZT)、鈦酸鋇(BaTO?)和鐵酸鉍和Mg-ZnO基氧化物等。基于鐵電材料中較高的極1鐵電局域場增強納米線光電探測器提高探測器件的靈敏度是一種可行辦法。2016年，膜作為介質(zhì)層，采用側(cè)柵結(jié)構(gòu)制備磷化銦(InP)和硫化鎘(CdS)單根納米線晶體管。聚偏氟乙烯(PVDF)最大。但β相在室溫下不是非常穩(wěn)定，因此通過在PVDF中引入一定數(shù)量的三氟乙烯(TrFE)能夠形成新的有機鐵電聚合物P(VDF-TrFE)。P(VDF-TrFE)可行電子或者空穴的有效摻雜。該器件能夠通過側(cè)柵電極極化鐵電材料產(chǎn)生超強局域電場有效耗盡納米線本征載流子降低暗電流，顯著提高探測器的信噪OO極化狀態(tài)下的工作原理圖，此時P(VDF-TrFE)薄膜極化方向由納米線指向側(cè)柵電極，n型InP2.8×10?AW-1,探測率為9.1×101?Jones,比傳統(tǒng)商用Si器件的探測率高出兩個數(shù)量級以上。受限于材料和紫外-可見(350~700nm)。砷化銦(InAs)納米線作為一種典型的直接帶隙Ⅲ-V族半導(dǎo)體材料，具有超高的載流子遷移率和窄禁帶寬度(~0.35eV),已被廣NWNegativePFig.1Ferroelecticlocalizedfield-enhancednanowirephotodetectors.(a)Devicestructureschematicofferroelectic(b)Workingprinciplediagramofthedeviceinthenegativepolarizationstatel5;InAsNW;(d)Outputcharacteristiccurvesofthedevicefor3.5μmexcitinglightatdifferent方向不同的電壓脈沖使得P(VDF-TrFE)薄膜處于三現(xiàn)截止波長邊緣(~3.5μm)處的高靈敏探測，在3.5μm光照射下獲得高達(dá)1.6×10測器子保持在完全耗盡的狀態(tài)，暗電流成功地被抑制A圖2鐵電局域場增強MoS?光電探測器。(a)鐵電材料調(diào)控MoS?頂柵器件結(jié)構(gòu)示意圖；(b)不同光波長下的響應(yīng)率14;(C)鐵電材料調(diào)控Fig.2Feroelectriclocalizedfield-enhancedMoS?photodetector.(a)SchematicdiagraP(VDF-TrFE)包裹，可以有效改善材料的降解和散寸減小至納米結(jié)構(gòu)時，聲子散射被抑制，暗電流減小，探測靈敏度，需要外加?xùn)艍赫{(diào)控器件的工作狀態(tài)。(LiNbO?)上，然后通過沉積浮動?xùn)诺墓に嚨玫交谑疭DSDEQ\*jc3\*hps16\o\al(\s\up1(P),C)圖3鐵電局域場增強二維材料光電探測器。(a)鐵電材料調(diào)控InSe光電晶體管結(jié)構(gòu)示意圖20;(b)鐵電材料調(diào)控InSb光電晶體管結(jié)構(gòu)示意圖[28Fig.3Ferroelecticlocalizedfield-enhancedtwo-dimensionalmaterialphotodetectors.(a)StructureschematicofferoelectricmaterialtunedIphototransistor20;(b)StructureschematicofferroelectricmaterialtunedInSbphototransis溫度系數(shù)高達(dá)900%/K,增益高達(dá)200,溫度分辨率為TrFE)/MoS?場效應(yīng)晶體管結(jié)構(gòu)0;(d)Bi?O?Se/PMN-PT鐵電場效應(yīng)晶體管結(jié)構(gòu)示意圖31Fig.4Modulationoftwo-dimensionalmaterialphotodetectorsbypyroelectriceffectofferoelectricmaterials.(a)Schematicdiagramofgpyroelectricbolometer;(b)WorkingprinciplediagramofgraphenepyroelectricbolometerP;(c)P(VDF-TrFE)MoS?fieldeffecttrstructure30;(d)StructureschematicofBi?O?Se/PMN-PTferroelectricfieldeffecttransistorl3N-typeWSe?訓(xùn)EpMonolayerwse?PdownBFOferroelectricsubsPdown鏡(PFM)將鐵電襯底左右兩塊區(qū)域分別極化且極化圖5鐵電局域場增強二維材料同質(zhì)結(jié)器件。(a)BiFeO?調(diào)控的WSe?面內(nèi)pn結(jié)示意圖；(b)器件的輸出特性33;(c)P(VDF-TrFE)調(diào)控的Fig.5Feroelecticlocalizedfield-enhancedtwo-dimensionalmateralhomojunctiondevices.(a)Schematicdiagrin-planepnjunction;(b)Outputcharacteristicsofthedevice32;(c)SchematicdiagramofP(VDF-TrFE)ferjunction;(d)Photocurrentmappingofthedevice33所示，利用原子力顯微鏡上帶電的針尖對P(VDF-接觸的MoTe?納米片。通過調(diào)控不同區(qū)域鐵電材料的極化方向可以對MoTe?進(jìn)行P型摻雜或者N型摻振探測。將P(VDF-TrFE)旋涂在GeSe/MoS?異質(zhì)結(jié)Fig.6Feroelectriclocalizedfield-enhancedtwo-dimensionalvanderWalsheterojunctiondevicesl3.(a)DevitunedGeSe/MoS?heterojunction;(b)-(d)SchematicdiagramoftheenergybandstructureoftheheterojunctionferroelectricpolarizaⅡ類異質(zhì)結(jié)(如圖6(b)所示),有利于光生載流子的分?jǐn)?shù)載流子的漂移電流受限，反向電流低于未極化狀態(tài)壓，具有易失性，導(dǎo)致工作條件復(fù)雜，功耗大。鐵電材式光電子器件同樣具有很大的發(fā)展?jié)摿?。參考文獻(xiàn)：[1]JiangW,ZhengT,WuB,etassistedbyphotovoltaicandbolomeScience&Applications,2020,9(1):1[2]LongM,WangP,FangH,etal.Progress,opportunitiesfor2Dmaterialbasedphot[3]WangJ,HanJ,ChenX,etdimensionalmaterialphotodetectorstoenhanceperformance[J].InfoMat,2019,1(1):33-53.[4]FangJ,ZhouZ,XiaoM,etdesigninghigh-sensitivitylow-dimensionalphoto[6]ZhangM,LiuX,DuanXelectronphotodetectorswithfastresponseandhigh[J]A.CSPhotonics,2022,9(1[7]XuY,LiuC,GuoC,etal.Highperformaphotodetectorbasedonin-planeblackphosphorusphomojunction[J].NanoEne[8]ChenY,MaW,TanC,etal.BroadbandBi?O?Sephotodetectors2021,31(14):2009554.[9]LiuD,LiuF,LiuY,etal.Schottky-contactedhigh-perfGaSbnanowiresphotodetectorseinorganicperovskitesdecora[10]YinY,GuoY,LiuD,etal.Substrate-freechemical[12]SunJ,PengM,ZhangcatalyzedGaSbnanowiresforphotodetectors[J].NanoLetters,2019,19(9):592[13]WangJ,FangH,WangX,etal.Recentprofieldenhancedtwo-dimens[14]WangX,WangP,WangJ,ferroelectricfied-high-performancefull-depletednanowirephotodetectors[J].NanoLetters,2016,16(4):2548-2555.[16]MiaoJ,HuW,GuoN,etal.High-responsivitnanowireheterojunctionnear-infraredphotodetecdistinctphotocurrenton/offratios[J].Small,2015,11(8):936-[17]FangH,HuW,WangP,etperformancemid-infraredphotodetenanowire[J].NanoLetters[18]ZhangX,HuangH,YaoX,etal.Ultrasensitivemid-wavelinfraredphotodetectionbasedonasingleInAsnACSNano,2019,13(3):3492-3[19]YangY,WangX,WangC,etperformanceofaGeSn/Gedual-nanowirephotodetector[J].NanoLetters,2020,20(5):3872-3879.[20]HuangC,LiY,WangN,etal.Progressingraphdiyne-basedmaterials[J].Chemical[21]ManzeliS,OvchinnikovD,PasquierD,etal.2Dtradichalcogenides[J].NatureReviewsMaterials,2017,2(8):[22]WangQH,Kalantoptoelectronicsoftwo-dimensionaltranstionmetaldichalcogenides[J].NatureNanotechnology,2012,7(11)[23]TuL,CaoR,WangX,ephototransistors[J].NatureCommunications,2020,11(1):101.[24]SucharitakulS,GobleNJ,KumarUNanoLetters,2015,15(6):3815-381heterojunctionswithultrahighreverserectificationratioandhighphotosensitivity[J].AdvancedFunctionalMaterials,2019,29(12):1900314.[26]LiuL,WuL,WangA,ephotodetectorswithhighon/offratiosandphotorespons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