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MorganstanleyRESEARCH
October8,202508:00PMGMT
GreaterChinaSemiconductors|AsiaPacific
MemoryRefresh:
UnprecedentedSupercycle
AIcontinuestopushthesupercycleforDRAM,NANDandevenNORFlash.Chinesememoryplayersremainaggressiveon
capacityexpansion.RaisePTsforNanyaTech,Phison,andSIMO.
KeyTakeaways
ExpectDDR4toface10-15%undersupplyoverthenextthreequarters,withpotentialformoresevereconstraintsonthebackend.
Anticipatea2%NANDshortagein2026duetoAIinfrastructuredeployment,withourbullcaseprojectinguptoan8%shortage.
DDR4shortagetocontinueuntil4Q26attheearliest:OurUSanalystJoeMoorerecentlyupgradedMicrontoOW
(link)
,statingthatitIsnottoolatetoparticipateinthememoryupcycle.ForDRAM,mainstreammemoryvendorshavestopped
providingpricingquotestoenterprisecustomers,whichusuallymeansmorepricingupsideahead.Wecontinuetosee10-15%undersupplyforDDR4overthenextthreequarters
(link)
,potentiallyexacerbatedbyback-endconstraints.NanyaTech
reportedpreliminary3Qrevenueof+79%Q/Q,andweexpectthismomentumtocontinuewithASPslikelytoriseatleast20%Q/Qasthemarketshiftsdecisivelyinfavorofsellers.
NANDdemandremainsdivergentbetweenAIandnon-AI:FasterAIinference
demandandgrowingHDDcapacityconstraintshaveledCSPstomorethandoubletheirNLeSSDordersfor2026.Inourbasecase,weexpectfasterAIinfrastructuredeploymenttodrivea2%NANDshortagein2026.Inourbullcase,weexpectNLSSDtofurtheroffsetNLHDDshortages,startingwitha5%NANDsupplygapin2026andpotentiallywideningto8%byyear-end.Asaresult,weexpect2026
NANDpricingtoriseatleastmid-teens%,benefitingmoduleplayerslikePhison.
NORpricingalsolookswell-supported
(link)
:NORsupplygrowthremainscappedattheback-end.WithpossibledemandupsidefromIoT(e.g.AirPods)andservers,webelievetheundersupplyratiocouldrisefromlow-single-digittomid-single-digitin1H26.AirPodsalonecouldaccountfor5-10%ofglobalNORdemandby2026aseachpairrequiresthreehigh-densityNORFlashchips.Thissuggestspricehikes
couldpersistwellinto2026.
RaisePTsforNanyaTech,PhisonandSIMO:WeexpectlegacyDRAMplayerstocontinueenjoyingpricehikesinto2026,includingNanyaTech,Winbond,and
GigaDevice,helpingtheiroverallprofitability.WestillfavorPhisonandSIMOgivenourslightlybetteroutlookforNANDmodulesandthelong-termeSSDopportunity.WeareOWonNAURA,AMEC,andACMR,mainlyonongoinglocalizationplansforChinesememoryandmaturenodeplayers.APMemoryandPSMCcouldpartly
benefitfromastrongDDR3pricehike.
MorganStanleyTaiwanLimited+
CharlieChan
EquityAnalyst
Charlie.Chan@
Idea
+88622730-1725
DanielYen,CFA
EquityAnalyst
Daniel.Yen@
+88622730-2863
MorganStanleyAsiaLimited+
DaisyDai,CFA
EquityAnalyst
Daisy.Dai@
+8522848-7310
DuanLiu
EquityAnalyst
Duan.Liu@
+8522239-7357
MorganStanleyTaiwanLimited+
TiffanyYeh
EquityAnalyst
Tiffany.Yeh@
+88627712-3032
LucasWang
ResearchAssociate
Lucas.Wang@
+88622730-2875
MorganStanleyAsiaLimited+
EthanJia
ResearchAssociate
Ethan.Jia@
+8523963-2287
GreaterChinaTechnologySemiconductors
AsiaPacific
IndustryViewAttractive
What’sChanged
NanyaTechnologyCorp.
(2408.TW)
From
To
PriceTarget
NT$90.00
NT$110.00
SiliconMotion(SIMO.O)
From
To
PriceTarget
US$88.00
US$100.00
PhisonElectronicsCorp
(8299.TWO)
From
To
PriceTarget
NT$800.00
NT$1,000.00
MorganStanleydoesandseekstodobusinesswith
companiescoveredinMorganStanleyResearch.Asaresult,investorsshouldbeawarethatthefirmmayhaveaconflictofinterestthatcouldaffecttheobjectivityofMorganStanley
Research.InvestorsshouldconsiderMorganStanley
Researchasonlyasinglefactorinmakingtheirinvestmentdecision.
Foranalystcertificationandotherimportantdisclosures,refertotheDisclosureSection,locatedattheendofthis
report.
+=Analystsemployedbynon-U.S.affiliatesarenotregisteredwithFINRA,maynotbeassociatedpersonsofthememberandmaynotbesubjecttoFINRArestrictionson
communicationswithasubjectcompany,publicappearancesandtradingsecuritiesheldbyaresearchanalystaccount.
organstanley
RESEARCH
Idea
2
MonthlyUpdates:SpecialtyDRAM(+),NAND(+)andNOR
(+)
NanyaTech,WinbondandGigaDeviceareourpreferredGreaterChinamemoryplays:Wecontinuetosee10-15%undersupplyforDDR4inthenextthreequarters
(link)
,andback-endconstraintscouldmakethisevenworse.WethusbelievethecontractpriceforsomeDDR4speccouldmorethandoublein4Q.ThevalidityofthepricingquoteforDDR4isnowturningtoevenlessthanonemonth,meaningthecontractpricecouldbeadjustedupwithinweeks.WebelievethepricinghikeisalsostrongerforDDR3,withhighdouble-digitgrowthinto4Q.
Webuiltabottom-upsupply-demandmodelinourDDR4deep-divereport:
Global
Technology:HowlongcanhigherDDR4pricinglast?(29Jul2025).
Weexpect10-15%undersupplyin4Q25-2Q26,narrowingtoasingledigitin2H26.WebelievemainstreamDRAMplayerswillfocusmoreonDDR5andHBM,providingonlytheminimumDDR4supporttokeyclientsin2026andonwards.
DebatingonDDR4pricingsustainability;weareturningmoreconstructiveoverall:Investors'largestconcernrightnowisapotentialDDR4pricingcollapseinthenext1-2quarters.WethinkthelevelofDDR4undersupplymightbeunderestimatedbythe
market.BasedonourDDR4supply/demandmodel,webelievetherewillbea10-15%undersupplyinthenext3quarters.Therearenowcontractpricinghikesformostnichememoryvendorsonamonthlybasis.Thegapmaynarrowin2H26,dependingonhowsoondemandshiftsawayfromDDR4.
MainstreamplayersunlikelytoproducemoreDDR4:ThemarketisconcernedaboutmainlySamsungandCXMTcomingbacktothemarket,orextendingtheEOLtimeline,
posttheDDR4pricinghike.WebelieveDDR5andHBMstilloffermuchbiggerTAMsandlonger-termpotential,whichsuggestsit'sunrealisticforSamsungandCXMTtosticktoDDR4.AccordingtoShawnKim,SamsungisnowfocusingmoreresourcesonHBM3eandHBM4
(link)
.DDR5willbeabout80%ofthemarketin2025,weestimate.Wealsothinkthere’sanincentiveformemoryplayerstosustainhighpricingforDDR4,givenDDR4
lossesinpastyearsandthepushforDDR5migration.
DDR4demandshrinkingbutunlikelytovanish:Inourmodel,weassumeDDR4demandfalls47%in2025and51%in2026.Themajordeclineismainlyfromsmartphones,serversandPCs.However,demandfromotherapplications(TV,networking,auto,industrial)is
likelytodeclineataslowerpace.SomeapplicationsmightevenswitchbacktoDDR3(insteadofDDR4)oncepricinghikestakeeffect(e.g.TVs).ThiscouldresultinarippleeffectofbetterDDR3pricing.MostWoWprojects(e.g.NPU)in2027arealsobasedonDDR4products.
WebelieveGreaterChinasemiconductorspecialtyDRAMplayers,includingNanyaTech,WinbondandGigaDevice,wouldbethekeybeneficiariesofanyDDR4upcycle.
organstanley
RESEARCH
Idea
Exhibit1:Quarterlysupplyanddemandsummary
40,000
35,000
30,000
25,000
20,000
15,000
10,000
5,000
-
1Q233Q231Q243Q241Q253Q25e1Q26e3Q26e
Supply(mnGb)(LHS)Demand(mnGb)(LHS)Oversupply/(undersupply)ratio(RHS)
40%
30%
20%
10%
0%
-10%
-20%
Source:MorganStanleyResearch(E)estimates
Exhibit3:Quarterlysupplybreakdown(mnGb)
20,000
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
-
1Q233Q231Q243Q241Q253Q25e1Q26e3Q26e
SamsungHynixMicronCXMTNanyaWinbondPSMCJHICC
Source:MorganStanleyResearch(E)estimates
Exhibit5:NanyaTech:DRAMproductmixandroadmap(mnGb)
600
500
400
300
200
100
-
1Q233Q231Q243Q241Q253Q25e1Q26e3Q26e
30nm(Shrink)2Xnm1Anm1Bnm
Source:MorganStanleyResearch(E)estimates
Exhibit2:Quarterlydemandbreakdownbyproduct(mnGb)
30,000
25,000
20,000
15,000
10,000
5,000
-
1Q233Q231Q243Q241Q253Q25e1Q26e3Q26eSmartphonePCServerTVOthers
Source:MorganStanleyResearch(E)estimates
Exhibit4:Quarterlyoversupply/undersupplyratiovs.NanyaandWinbondpricingQ/Qchange
40%
30%
20%
10%
0%
-10%
-20%
-30%
-40%
1Q232Q233Q234Q231Q242Q243Q244Q241Q252Q25Oversupply/(undersupply)ratioNanyapricingQ/Qchange
WinbondpricingQ/Qchange
Source:MorganStanleyResearch(E)estimates
Exhibit6:Winbond:DRAMproductmixandroadmap(mnGb)
250
200
150
100
50
-
1Q233Q231Q243Q241Q253Q25e1Q26e3Q26e
65nm46nm38nm25nm25Snm20nm16nm
Source:MorganStanleyResearch(E)estimates
MorganStanleyResearch3
4
organstanley
RESEARCH
Idea
Exhibit7:CXMTaggressivelyexpandingcapacityforspecialtyDRAM
SpecialtyDRAMcapacity(kwpm)
300
250
200
150
100
50
0
SamsungSKHynixMicronNTCPSMCWinbondJHICCCXMTOthers2019202020212022202320242025e2026e2027e
Source:TrendForce,MorganStanleyResearchestimates,basedonourchannelchecks
Exhibit8:CXMTisthelargestspecialtyDRAMsuppliernow
100%
80%
60%
40%
20%
0%
2019202020212022202320242025e2026e2027e
SamsungSKHynixwMicronwNTCWPSMCWWinbondJHICCWCXMTOthers
Source:TrendForce,MorganStanleyResearchestimates,basedonourchannelchecks
Exhibit9:TrendForceexpectsDDR4pricingtobeup13-18%Q/Qin4Q
New
1Q24
2Q24
3Q24
4Q24
BlendedconsumerDRAMrange(Q/Q)
DDR3:up8-13%
DDR3:up3-8%
DDR3:mostlyflat
DDR3:down5-10%
DDR4:up10-15%
DDR4:up5-10%
DDR4:up3-8%
DDR4:down5-10%
BlendedconsumerDRAMmid-point(Q/Q)
DDR3:up10.5%
DDR3:up5.5%
DDR3:mostlyflat
DDR3:down7.5%
DDR4:up12.5%
DDR4:up7.5%
DDR4:up5.5%
DDR4:down7.5%
New
1Q25
2Q25
3Q25e
4Q25e
BlendedconsumerDRAMrange(Q/Q)
DDR3:down3-8%
DDR3:mostlyflat
DDR3:up50-60%
DDR3:up10-15%
DDR4:down10-15%
DDR4:up18-23%
DDR4:up85-90%
DDR4:up13-18%
BlendedconsumerDRAMmid-point(Q/Q)
DDR3:down5.5%
DDR3:mostlyflat
DDR3:up55%
DDR3:up12.5%
DDR4:down125%
DDR4:up205%
DDR4:up875%
DDR4:up155%
Source:TrendForce(e)estimates,MorganStanleyResearch
Exhibit10:MobileDRAMASPProjection
New
1Q24
2Q24
3Q24
4Q24
BlendedmobileDRAMrange(Q/Q)
up18-23%
up5-10%
mostlyflat
LPDDR4X:down13-18%
LPDDR5X:down5-10%
BlendedmobileDRAMmid-point(Q/Q)
up20.5%
up7.5%
mostlyflat
LPDDR4X:down15.5%
LPDDR5X:down7.5%
New
1Q25
2Q25
3Q25e
4Q25e
BlendedmobileDRAMrange(Q/Q)
LPDDR4X:down8-13%
LPDDR4X:up0-5%
LPDDR4X:up38-43%
LPDDR4X:up15-20%
LPDDR5X:down3-8%
LPDDR5(X):up3-8%
LPDDR5(x):up10-15%
LPDDR5(x):up8-13%
BlendedmobileDRAMmid-point(Q/Q)
LPDDR4X:down10.5%
LPDDR4X:up2.5%
LPDDR4X:up40.5%
LPDDR4X:up17.5%
LPDDR5X:down55%
LPDDR5(X):up55%
LPDDR5(X):up125%
LPDDR5(X):up105%
Source:TrendForce(e)estimates,MorganStanleyResearch
Exhibit11:PCDDR4ASPisexpectedtorise40.5%Q/Qin3Q,andkeepincreasingslightlyin4Q
New
1Q24
2Q24
3Q24
4Q24
BlendedPCDRAMrange(Q/Q)
DDR4:up15-20%
DDR4:up15-20%
DDR4:up8-13%
DDR4:down8-13%
DDR5:up15-20%
DDR5:up15-20%
DDR5:up8-13%
DDR5:down3-8%
BlendedASP:up15-20%
BlendedASP:up15-20%
BlendedASP:up8-13%
BlendedASP:down5-10%
BlendedPCDRAMmid-point(Q/Q)
DDR4:up15-20%
DDR5:up15-20%
BlendedASP:up15-20%
up7.5%
mostlyflat
LPDDR4X:down15.5%
LPDDR5X:down7.5%
New
1Q25
2Q25
3Q25e
4Q25e
BlendedPCDRAMrange(Q/Q)
DDR4:down13-18%
DDR4:up13-18%
DDR4:up38-43%
DDR4:up3-8%
DDR5:down10-15%
DDR5:up3-8%
DDR5:up3-8%
DDR5:up3-8%
BlendedASP:down10-15%
BlendedASP:up3-8%
BlendedASP:up8-13%
BlendedASP:up3-8%
BlendedPCDRAMmid-point(Q/Q)
DDR4:down15.5%
DDR4:up15.5%
DDR4:up40.5%
DDR4:up5.5%
DDR5:down12.5%
DDR5:up5.5%
DDR5:up5.5%
DDR5:up5.5%
BlendedASP:down12.5%
BlendedASP:up5.5%
BlendedASP:up5.5%
BlendedASP:up5.5%
Source:TrendForce(e)estimates,MorganStanleyResearch
MorganStanleyResearch5
organstanley
RESEARCH
Idea
Exhibit12:ServerDDR4ASPisexpectedtorise7.5%Q/Qin3Q,andkeepincreasingin4Q
New
1Q24
2Q24
3Q24
4Q24
BlendedServerDRAMrange(Q/Q)
DDR4:up~20%
DDR4:up15-20%
DDR4:up8-13%
DDR4:down8-13%
DDR5:up15-20%
DDR5:up15-20%
DDR5:up13-18%
DDR5:up3-8%
BlendedASP:up15-20%
BlendedASP:up15-20%
BlendedASP:up13-18%
BlendedASP:up0-5%
BlendedServerDRAMmid-point(Q/Q)
DDR4:up15-20%
DDR5:up15-20%
BlendedASP:up15-20%
up7.5%
mostlyflat
LPDDR4X:down15.5%
LPDDR5X:down7.5%
New
1Q25
2Q25
3Q25e
4Q25e
BlendedServerDRAMrange(Q/Q)
DDR4:down10-15%
DDR4:up18-23%
DDR4:up28-33%
DDR4:up15-20%
DDR5:down3-8%
DDR5:up3-8%
DDR5:up3-8%
DDR5:up5-10%
BlendedASP:down5-10%
BlendedASP:up3-8%
BlendedASP:up3-8%
BlendedASP:5-10%
BlendedServerDRAMmid-point(Q/Q)
DDR4:down15.5%
DDR4:up15.5%
DDR4:up30.5%
DDR4:up17.5%
DDR5:down12.5%
DDR5:up5.5%
DDR5:up5.5%
DDR5:up7.5%
BlendedASP:down12.5%
BlendedASP:up5.5%
BlendedASP:up5.5%
BlendedASP:up7.5%
Source:TrendForce(e)estimates,MorganStanleyResearch
Exhibit13:DRAMinventoryhasimprovedslighting(weeksofinventory):Smartphone,DRAMandPCOEMinventoryareshrinking
17
15
13
11
9
7
5
4Q19
1Q20
2Q20
3Q20
4Q20
1Q21
2Q21
3Q21
4Q21
1Q22
2Q22
3Q22
4Q22
1Q23
2Q23
3Q23
4Q23
1Q24
2Q24
3Q24
4Q24
1Q25
2Q25
2Q25
3Q25
3
DRAMsuppliersPCOEMsMajormodulehousesServerSmartphone
Source:TrendForce,MorganStanleyResearch
Exhibit14:DDR5vs.DDR416GbSpotPricingComparison(as
ofOct3):PricingdiscrepancystartedinJune,aftermajorsuppliersannouncedEOLplans
16.6
14.6
12.6
10.6
8.6
6.6
4.6
2.6
Jan24
Feb24
Mar24
Apr24
May24
Jun24
Jul24
Aug24
Sep24
Oct24
Nov24
Dec24
Jan25
Feb25
Mar25
Apr25
May25
Jun25
Jul25
Aug25
Sep25
0.6
DDR416Gb(2Gx8)3200MbpsDDR516G(2Gx8)4800/5600Mbps
Source:DRAMeXchange,MorganStanleyResearch
Exhibit15:DDR4stillenjoying42%spotpremium(asofOct3)
3.0
2.0
1.0
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
-7.0
Jan24
Feb24
Mar24
Apr24
May24
Jun24
Jul24
Aug24
Sep24
Oct24
Nov24
Dec24
Jan25
Feb25
Mar25
Apr25
May25
Jun25
Jul25
Aug25
Sep25
Oct25
80%
60%
40%
20%
0%
-20%
-40%
-60%
DDR5pricepremiumtoDDR4(LHS,$)DDR5vs.DDR4pricegap(RHS,%)
Source:DRAMeXchange,MorganStanleyResearch
6
organstanley
RESEARCH
Idea
Exhibit16:CommodityDRAMcontractvs.spotpricetrend(DDR48Gb)–spotpremiumat7%asofOct3(vs.110%spotpremiumtwomonthsago)
6.8
6.5
6.2
5.9
5.6
5.3
5.0
4.7
4.4
(US$)
4.1
3.8
3.5
3.2
2.9
2.6
2.3
2.0
1.7
1.4
1.1
Oct-19Apr-20Oct-20Apr-21Oct-21Apr-22Oct-22Apr-23Oct-23Apr-24Oct-24Apr-25Oct-25
DDR48G1G*82666MbpsSpotPrice——DDR48Gb1G*82133MbpsContractPrice
Source:DRAMeXchange,MorganStanleyResearch
Exhibit18:Consumer/specialtyDRAMcontractvs.spotprice
Exhibit17:CommodityDRAMcontractvs.spotpricetrend(DDR416Gb)–spotsurplusat10%asofOct3(vs.60%
premiumatJuly29)
14.0
12.0
10.0
(US$)
8.0
6.0
4.0
2.0
Sep-21Jan-22May-22Sep-22Jan-23May-23Sep-23Jan-24May-24Sep-24Jan-25May-25Sep-25
DDR416G2G*82666MbpsSpotPriceDDR416Gb(2Gx8)ContractPrice
Source:DRAMeXchange,MorganStanleyResearch
trend–spotsurplusat25%asofOct3(vs.1%spotpremiuminJul29)
4.0
3.5
3.0
(US$)
2.5
2.0
1.5
1.0
0.5
Oct-16Apr-17Oct-17Apr-18Oct-18Apr-19Oct-19Apr-20Oct-20Apr-21Oct-21Apr-22Oct-22Apr-23Oct-23Apr-24Oct-24Apr-25Oct-25
DDR34Gb256M*16SpotPriceDDR34Gb256M*16ContractPrice
Source:DRAMeXchange,MorganStanleyResearch
organstanley
RESEARCH
Idea
MorganStanleyResearch7
Long-termdevelopment-China'sactivedevelopmentcouldstilltooversupplyeffects
forTaiwan'sspecialtyDRAMplayersinfuture:OurindustrycheckssuggestthatCXMTmaybesettoexpandcapacityto270/290/340kwpmin2025/26/27.WenotethatwhileCXMT's
originalIPOplan
wasreportedlydelayed,amorerecent
report
suggeststhe
companyisconsideringalistinginHongKong.Toourknowledge,CXMThasnotcommentedonthesereports.
Stockimplications:
?WeareOWonWinbond:
WinbondElectronicsCorp:UnderappreciatedEarnings
Power;ReiterateTopPick(22Sep2025)
?WeareOWonGigaDevice:
GlobalTechnology:Wafer-on-WaferStackingto
EnableNextGenEdgeAI(10Jul2025)
?WeareOWonNanyaTech:
NanyaTechnologyCorp.:DDR4SuperCycleIs
Coming;UpgradetoOW(17Sep2025)
?WeremainEWonPowerchip:
GreaterChinaSemiconductor:OldMemoryCould
LastforaLongerTime(6Oct2025)
8
organstanley
RESEARCH
Idea
NANDpricestoincreasefrom4Q25;controllerplayers
seeinggreenshoots
ForNAND,whilethereissomespecmigrationinthetraditionalclient/consumerNAND
Flashmarket,overalldemandremainsrelativelylukewarm.However,acceleratingAI
inferenceworkloadsandmountingHDDcapacityconstraintshavepromptedCSPstomorethandoubletheirNLeSSDordersfor2026.Inourbasecase,weexpectfasterAI
infrastructuredeploymenttodrivea2%NANDshortagein2026.Inourbullcase,we
anticipateNLSSDsincreasinglycompensatingforNLHDDshortfalls,startingwitha5%supplygapin2026andpotentiallywideningto8%.Asaresult,weexpectfull-yearNANDpricingtoriseatleastinthemid-teens%,furtherbenefitingmoduleplayerslikePhison.
Formemorycontrollers,wecontinuetoseemajorsuppliersexpandingtheiroutsourcedratioforNANDcontrollers,particularlyintheenterprisesegment,asoverallR&D
spendingriseswiththemigrationtomoreadvancednodes.Asaresult,weexpectSIMOtobeakeybeneficiaryofthisoutsourcingtrend.
Exhibit19:NANDFlashsuppliers'respectivesupplybitgrowthrates
SupplyBitGrowth
SNMSUNG
nnicron
2025F
0.9%
7.0%
11.8%
10.3%
87.3%
2026F
10.2%
18.7%
15.6%
17.2%
37.3%
Source:TrendForce
Exhibit20:Waferspotpricingandmodulepricessawextremepricehikesin3Q25
4.0
3.5
Wafer
3.0
2.5
Module
2.0
1.5
1.0
0.5
Oct-19Apr-20Oct-20Apr-21Oct-21Apr-22Oct-22Apr-23Oct-23Apr-24Oct-24Apr-25Oct-25
256GBSSDModule(US$)TLC256GbWaferSpot(RHS;US$)
Source:ChinaFlashMarket,MorganStanleyResearch
Exhibit21:SSDpricingsawhikesin2Q25buthaveremainedstablein3Q
4.0
3.5
Wafer
3.0
2.5
Module
2.0
1.5
1.0
0.5
Oct-19Apr-20Oct-20Apr-21Oct-21Apr-22Oct-22Apr-23Oct-23Apr-24Oct-24Apr-25Oct-25
256GBSSDModule(US$)TLC256GbWaferSpot(RHS;US$)
Source:ChinaFlashMarket,MorganStanleyResearch
MorganStanleyResearch9
organstanley
RESEARCH
Idea
Exhibit22:512GBTLCwaferpricingstablein1H25butslightuptickfrommid-July
6.5
5.5
4.5
Wafer
3.5
2.5
Module
1.5
0.5
Oct-19Apr-20Oct-20Apr-21Oct-21Apr-22Oct-22Apr-23Oct-23Apr-24Oct-24Apr-25Oct-25
512GBSSDModule(US$)TLC512GbWaferSpot(RHS;US$)
Source:ChinaFlashMarket,MorganStanleyResearch
Exhibit23:
TrendForceblendedNANDflashpriceforecasts
1Q252Q253Q25e4Q25e
New
BlendedNANDflashrange(Q/Q)
BlendedNANDflashmid-point(Q/Q)
New1Q242Q243Q244Q24
BlendedNANDflashrange(Q/Q)
up23-28%
up15-20%
up5-10%
down3-8%
BlendedNANDflashmid-point(Q/Q)
25.50%
17.50%
7.50%
-5.50%
down15-20%Up3-8%up3-8%up5-10%
-17.50%5.50%5.50%7.50%
Source:e=TrendForceestimates,MorganStanleyResearch
Exhibit24:NANDinventorydropin3Q25(weeksofinventory),observedacrossNANDsuppliersandPCOEMs
27
25
23
21
19
17
15
13
11
9
7
5
3
4Q19
1Q20
2Q20
3Q20
4Q20
1Q21
2Q21
3Q21
4Q21
1Q22
2Q22
3Q22
4Q22
1Q23
2Q23
3Q23
4Q23
1Q24
2Q24
3Q24
4Q24
1Q25
2Q25
2Q25
3Q25
NANDsuppliersPCOEMsMajormodulehousesServerSmartphone
Source:TrendForce,MorganStanleyResearch
10
organstanley
RESEARCH
Idea
Chinamemoryplayerslooksettocontinuerobustcapacity
expansion
Basedonoursupplychainchecks,bothDRAM/HBMandNANDmemoryarecritical
componentsforAIcomputingsemiconductors.HBM3eappearstobethemainstreamspecfornext-generationdomesticHBM,positionedtosupportself-developedAIprocessors.
Withthatinmind,weexpectChineseHBMdevelopmenttoacceleratethrough2025and
2026.Inaddition,givenongoingexportcontrolsonkeysemiconductorequipmentfromtheUS,weareseeingarisingrateoflocalizationofwaferfabequipmentfornewfoundryprojectsinChina(
ChinaWFEoutlookremainsstrongin2H25and1H26
).
Exhibit25:Localequipmentadoptionratiosofdifferentkeyprojects
50%
45%
40%
35%
30%
25%
20%
15%
10%
5%
0%
45%
27%
22%
18%
20%20%18%
15%
14%
SMIC(Lingang
fab)
HuaHong(Fab
9)
SMIC
(Jingchengfab)
Nexchip(Fab3)
Chinaoverall
WFE
Chinaoverall
WFE
localization
rate(2024)
CXMTYMTCNexchip
(Fab1&2)
localization
rate(2025e)
Source:MorganStanleyResearchestimates.
CXMT(private):AccordingtoourindustrychecksatSEMICONChina,CXMTmaybeabletoexpanditscapacityby60kwpmin2025,withanadditional20kwpmin2026.Overthelongterm,CXMT’stotalcapacitycouldexceed300kwpm.However,thecompanyis
currentlypreparingforanIPO.IftheIPOtakesplacein2026,newlyraisedfundscouldfurtheracceleratecapacityexpansion.
YMTC(private):OursupplychainchecksindicatethatYMTCissteadilyfillingFab1andFab2,andissettobegintoolmove-inforthenewFab3in3Q25.Fab3isnotexpectedtorampmeaningfullyuntil2026.We’vesplitYMTC’sadditionalcapacityinto“memory”and“peripherals,”withonlymemorycapacityreflectedinthechartbelow.Onthisbasis,ourindustrycheckssuggestYMTCcouldexpanditstotalcapacityby10kwpmin2025,withafurther40kwpmaddedin2026.
Exhibit26:PotentialforsignificantexpansionatCXMT
CXMT
2018
2019
2020
2021
2022
2023
2024
2025e
2026e
2027e
2028e
Capacity(kwpm-8"equiv)
-
45
90
113
128
275
473
608
653
765
855
12-inchfabs
20
40
50
57
122
210
270
290
340
380
HefeiPhase1(12-inch)
20
40
50
52
100
100
100
100
100
100
HefeiPhase2(12-inch)
0
0
0
0
0
50
90
100
100
100
Beijing(12-inch)
0
0
0
5
22
60
80
90
100
100
SHLingang(12-inch)
0
0
0
0
0
0
0
0
40
80
Source:TrendForce,e=MorganStanleyResearchestimates,basedonindustrychannelchecks.
organstanley
RESEARCH
Idea
MorganStanleyResearch11
Exhibit27:PotentialforcapacityexpansionatYMTC
YMTC20182019202020212022202320242025e2026e2027e2028e
Capacity(kwpm-8"equiv)-4590191236270338360450529596
12-inchfabs204085105120150160200235265
WuhanFab1(12-inch)
20
40
85
95
95
95
100100100100
WuhanFab2(12-inch)
0
0
0
10
25
55
60608585
WuhanFab3(12-inch)
0
0
0
0
0
0
0405080
Source:TrendForce,e=MorganStanleyResearchestimates,basedonindustrychannelchecks.
Stockimplications
?WeareOWonNAURA:WeexpectNAURAtodeliverfurtherearningsgrowth,
drivenbymarketsharegainsoverpeersamidChina’slocalizationpush.Webelieveitskeycustomerswillcontinueexpandingcapacityaggressivelyoverthenextfewyears.NAURAhasacquireda17.9%stakeinKingSemi,whosetrack,cleaning,andback-endequipmentcouldcomplementNAURA’sproductportfolio.Wealso
expectNAURA’sR&DandsalesteamstoempowerKingSemi’sgrowth.
?WeareOWonAMEC:WebelieveAMECcouldfurtherexpanditsmarketshareonthebackofitsleadingtechnologiesandbroadercov
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