高性能碳化硅基硅量子點薄膜的設計摘要 太陽能作為一種極具潛力的可再生能源，其資源儲備極為豐富，幾乎可以說是取之不盡、用之不竭。太陽電池的運行機制主要是將太陽光能高效地轉(zhuǎn)化為電能，這一過程在能源轉(zhuǎn)換領域具有極其重要的意義。近年來，硅量子點薄膜在太陽能電池領域的應用前景備受關注，展現(xiàn)出顯著的應用潛力，為太陽能電池的性能提升和成本降低帶來了新的希望。本設計將研究重點聚焦于碳化硅基硅量子點薄膜，其核心工作主要圍繞薄膜的制備工藝以及性能評估這兩大關鍵部分展開。在制備工藝方面，本設計采用了先進的磁控共濺射技術來制備基于碳化硅的硅量子點薄膜。通過這種技術，能夠精確地控制薄膜的結構和成分，從而為后續(xù)的性能優(yōu)化奠定基礎。在性能評估方面，本設計深入分析了不同濺射功率對硅量子點薄膜性能的影響。研究結果表明，濺射功率對量子點的數(shù)量、尺寸、晶化率、光學帶隙以及光致發(fā)光峰等諸多關鍵性能指標均有顯著作用。具體來說，當濺射功率設定為80瓦時，所制備的薄膜在各項性能指標上均達到了最優(yōu)狀態(tài)，其量子點的數(shù)量和尺寸分布最為合理，晶化率較高，光學帶隙和光致發(fā)光峰的特性也最為理想，從而使得薄膜的整體性能得到了顯著提升，為太陽能電池的高效能量轉(zhuǎn)換提供了有力支持。關鍵詞：碳化硅；硅量子點；磁控濺射AbstractSolarenergy,asahighlypromisingrenewableresource,hasanextremelyabundantreservethatcanberegardedasinexhaustible.Theoperationalmechanismofsolarcellsmainlyinvolvestheefficientconversionofsolarenergyintoelectricalenergy,whichholdssignificantimportanceinthefieldofenergyconversion.Inrecentyears,theapplicationprospectsofsiliconquantumdotfilmsinsolarcellshaveattractedconsiderableattention,demonstratingremarkablepotentialandbringingnewhopeforenhancingtheperformanceandreducingthecostofsolarcells.Thispaperfocusesontheresearchofsiliconquantumdotfilmsbasedonsiliconcarbide,withthecoreworkmainlyrevolvingaroundthepreparationprocessandperformanceevaluationofthesefilms.Intermsofthepreparationprocess,advancedmagnetronco-sputteringtechnologyisadoptedtofabricatesiliconquantumdotfilmsbasedonsiliconcarbide.Throughthistechnology,thestructureandcompositionofthefilmscanbepreciselycontrolled,layingasolidfoundationforsubsequentperformanceoptimization.Intheaspectofperformanceevaluation,thisstudydeeplyanalyzedtheinfluenceofdifferentsputteringpowersontheperformanceofsiliconquantumdotfilms.Theresearchresultsindicatedthatthesputteringpowerhasasignificanteffectonnumerouskeyperformanceindicatorssuchasthequantity,size,crystallizationrate,opticalbandgap,andphotoluminescencepeakofthequantumdots.Specifically,whenthesputteringpowerissetat80watts,thepreparedfilmachievestheoptimalstateinallperformanceindicators.Thequantityandsizedistributionofthequantumdotsarethemostreasonable,thecrystallizationrateisrelativelyhigh,andthecharacteristicsoftheopticalbandgapandphotoluminescencepeakarealsothemostideal.Asaresult,theoverallperformanceofthefilmissignificantlyenhanced,providingstrongsupportfortheefficientenergyconversionofsolarcells.Keywords:Siliconcarbide;Siliconquantumdots;Magnetronsputtering目錄TOC\o"1-3"\h\u28899第一章緒論 參考文獻BestResearch-CellEfficiencyChart[EB/OL].NationalRenewableEnergyLaboratory(NREL)officialwebsite/pv/cell-efficiencyCANHAMLT.Siliconquantumwirearrayfabricationbyelectrochemicalandchemicaldissolutionofwafers[J].AppliedPhysicsLetters,1990,57(10):1046-1048.ChuahLS,HassanZ,HassanHA.Visible-LightEmissionDuetoQuantumSizeEffectsinPorousCrystallineSilicon[C]//AipConference.AmericanInstituteofPhysics,2010:385-388.ShamTK,JiangDT,CoulthardI,etal.Originofluminescencefromporoussilicondeducedbysynchrotron-light-inducedopticalluminescence[J].Nature,1993,363(6427):331-334.ConibeerG,GreenM,CorkishR,etal.Siliconnanostructuresforthirdgenerationphotovoltaicsolarcells[J].ThinSolidFilms,2006,511(14):654-662.CullisA.G.,CanhamL.T.,CalcottP.D.J.Thestructuralandluminescencepropertiesofporoussilicon.J.Appl.Phys.,1997,82(3):909-965.HaoH.L.,WuL.K.,ShenW.Z.Controllingtheredluminescencefromsiliconquantumdotsinhydrogenatedamorphoussiliconnitridefilms.Appl.Phys.Lett.,2008,92(12):121922.《2011年中國及海外太陽能光伏產(chǎn)業(yè)發(fā)展報告》，P5-9.ZhaoJ.H.,WangA.,MartinA.G.24.5%EfficiencySiliconPERTCellsonMCZSubstratesand24.7%EfficiencyPERLCellsonFZSubstrates.Prog.Photovolt:Res.Appl.,1999,7:471-474.NozikA.J.Quantumdotsolarcells.PhysicaE,2002,14:115-120.BeardM.C.,KnutsenK.P.,YuP.,etal.MetzgerW.K.,NozikA.J.,Multipleexcitongenerationincolloidalsiliconnanocrystals.NanoLett.,2007,7(8):2506.彭英才，于威.納米太陽電池技術，北京：化學工業(yè)出版社，2010.7-9.L.T.Canham,K.G.Barraclough,andD.J.Robbins.1.3-mmlight-emittingdiodefromsiliconelectronirradiatedatitsdamagethreshold[J].AppliedPhysicsLetters,1987,51,1509.L.T.Canham,M.R.Dyball,andK.G.Barraclough.Surfacecoppercontaminationofas-receivedfloat-zonesiliconwafers[J].JournalofAppliedPhysics,1989,66(2)95.陳軍霞，丁雙陽．量子點熒光探針在生物學中的應用[J]．動物醫(yī)學進展，2005，26(6);1082111.PrioloF,GregorkiewiczT,GalliM,etal.Siliconnanostructuresforphotonicsandphotovoltaics[J].NatureNanotechnology,2014,9(1):19-32.BuurenTV,DinhLN,ChaseLL,etal.ChangesintheElectronicPropertiesofSiNanocrystalsasaFunctionofParticleSize[J].PhysicalReviewLetters,1998,80(17):3803-3806.LiuX,ZhangY,YuT,etal.OptimumQuantumYieldoftheLightEmissionfrom2to10nmHydrosilylatedSiliconQuantumDots[J].Particle&ParticleSystemsCharacterization,2016,33(1):44-52.BuurenTV,DinhLN,ChaseLL,etal.ChangesintheElectronicPropertiesofSiNanocrystalsasaFunctionofParticleSize[J].PhysicalReviewLetters,1998,80(17):3803-3806.NorrisDJ,EfrosAL,ErwinSC.Dopednanocrystals[J].Science,2008,319(5871):1776.ChenT,ReichKV,KramerNJ,etal.Metal-insulatortransitioninfilmsofdopedsemiconductornanocrystals[J].NatureMaterials,2016,114(15):299-303.ChenT,SkinnerB,XieW,etal.CarrierTransportinFilmsofAlkyl-Ligand-TerminatedSiliconNanocrystals[JJ.JournalofPhysicalChemistryC,2014,118(34):19580-19588.PiXD,ZalloumOHY,KnightsAP,etal.Electricalconductionofsiliconoxidecontainingsiliconquantumdots[J].JournalofPhysics:CondensedMatter,2006,18(43):9943-9950.KovalevD,DienerJ,HecklerH,etal.OpticalabsorptioncrosssectionsofSinanocrystals[J].Phys.rev.b,2000,61(7):4485-4487.KovalevD,DienerJ,HecklerH,etal.OpticalabsorptioncrosssectionsofSinanocrystals[J].Phys.rev.b,2000,61(7):4485-4487.PuzzoDP,HendersonEJ,HelanderMG,etal.VisibleColloidalNanocrystalSiliconLight-EmittingDiode[J].NanoLetters,2011,11(4):1585-1590.ChengKY,AnthonyR,KortshagenUR,etal.High-EffciencySiliconNanocrystalLight-EmittingDevices[J].NanoLetters,2011,11(5):1952-1956.Maier-FlaigF,RinckJ,StephanM,etal.MulticolorSiliconLight-EmittingDiodes(SiLEDs)[J].NanoLetters,2013,13(2):475-480.BuurenTV,DinhLN,ChaseLL,etal.ChangesintheElectronicPropertiesofSiNanocrystalsasaFunctionofParticleSize[J].Phys.rev.lett,1998,80(17):3803-3806.HeitmannJ,MüllerF,ZachariasM,etal.SiliconNanocrystals:SizeMatters[J].AdvancedMaterials,2010,17(7):795-803.姜禮華，曾祥斌，金韋利，等.硅量子點在太陽能電池中的應用[貝.激光與光電子學進展，2010,47(8):32-37.GREENM,CHOE,CHOY,etal.All-silicontandemcellsbasedon“artificial”semiconductorsynthesisedusingsiliconquantumdotsinadielectricmatrix;proceedingsofthe2OthEuropeanPhotovoltaiccells[J].ThinSolidFilms,2008,516(20):6748-56.ConibeerG,GreenM,ChoEC,etal.Siliconquantumdotnanostructuresfortandemphotovoltaiccells[J].ThinSolidFilms,2008,516(20):6748-6756.HongSH,KimYS,LeeW,etal.ActivedopingofBinsiliconnanostructuresanddevelopmentofaSiquantumdotsolarcell[J].Nanotechnology,2011,22(42):425203.呂振林，高積強，金志浩．碳化硅陶瓷材料及其制備[J]．機械工程材料,1999，23(3)；1-4江東亮，潘振更，李雨林，黃玉珍．反應燒結碳化硅陶瓷材料的研究[J]．無機材料學報，19