文檔來源為：從網(wǎng)絡(luò)收集整理文檔來源為：從網(wǎng)絡(luò)收集整理.word版本可編輯.歡迎下載支持ChapterChapter44.1whereNcoandNoarethevaluesat300K.(a)Silicon_ 一 3T(K) kT(eV) ni(cm)(b)Germanium(c)GaAs_ 3 3T(K) ni(cm)ni(cm)4.2PlotLetEExTheng1fF,xexp-xkTTofindthemaximumvalueSameaspart(a).Maximumoccursator4.7wherekTE4.7wherekTEi Ec4kTandE2Ec—Thenor4.8Plot4.8Plot4.9Plot4.3Bytrialanderror,T367.5K(b)Bytrialanderror,T417.5K4.4AtT200K,kTAtT200K,kT0.02592003000.017267eV400AtT400K,kT0.0259-3000.034533eVororEg1.318eVNowsoNcoNo9.411037cm64.5ForT200K,kT0.017267eVForT300K,kT0.0259eVForT400K,kT0.034533eV(a)ForT200K,(b)ForT300K,(c)ForT400K,4.6LetEEcxxThengcfFxexp——kTTofindthemaximumvalue:whichyieldsThemaximumvalueoccursat(b)4.10* *Silicon:mp0.56m。，mn 1.08m。EFiEmidgap0.0128eV*Germanium:mp0.37m0,*mn 0.55moEFiEmidgap0.0077eV_ *GalliumArsenide:m0.48mo,pEFiEmidgap0.0382eV4.11T(K)kT(eV)(EREmidgap)(eV)4.1210.63meV43.47meV4.13LetgcEKconstantThenLetEEc sothatdEkTdkTWecanwritesothatTheintegralcanthenbewrittenaswhichbecomes4.14Let4.14LetgcThenLetEC1EEcforEEc0.8436eVEf E0.2764eV2.4141014cm3

(a)p-type4.15m4.15m。*mEEc sothatdEkTdkTWecanwriteThenorWefindthatSor1Wehave—ao4.20375(a)kT0.0259—— 0.032375eV30014 31.1510cm1.14eV4.99103cm30.2154eV1.2046eV2 34.4210cm34.16Forgermanium,.一*16,m 0.55moThenorTheionizationenergycanbewrittenas*Emmo2-13.6eVs0.55-213.6E0.029eV164.21

375(a)kT0.0259 0.032375eV3006.861015cm30.840eV7 37.8410cm0.2153eVEfE1.120.21530.9047eV3Q7.0410cm3一Wehave一Wehave—mor -rmForgalliumarsenide,r13.1,ThenTheionizationenergyisorE0.0053eV4.170.2148eV1.120.21480.90518eV3 36.9010cm(a)Holes0.338eV4.180.162eV1.120.1620.958eV2.41103cm30.365eV4.22p-typeTOC\o"1-5"\h\z_ _ Eg 1.12Ef E ———0.28eV4 414 32.101014cm31.120.280.84eV5 32.3010cm4.2313 37.3310cm6 33.0710cm39 38.8010cm2 33.6810cm34.240.1979eV1.120.197880.92212eV9.66103cm3(a)Holes0.3294eV4.192.2.(b)no NcF1/2 F417 35.3010cm4.25400kT0.0259 0.034533eV30019 31.60110cm4.3109104.282(a)no4.282(a)no—NcFi/2fForEf EckT2,ThenF1/2f 1.0 33.1610cm312 3ni2.38110cm0.2787eVEcEf1.120.278730.84127eV1.134109cm3Holes0.2642eV4.261014cm3EcEf1.420.251.17eV102cm3(a)kT0.034533eV19 31.0781019cm37.2361017cm30.3482eVEcEf1.420.34821.072eV4 32.4010cm4.276.681014cm3EcEf1.120.250.870eV4 3no7.2310cm(a)kT0.034533eV19 31.60110cm4.3111019cm30.3482eVEcEf1.120.34820.7718eV9 38.4910cm34.29SoF1/2f4.26EEfWefindf3.0 kTEEf3.00.02590.0777eV4.30(a)fEf Ec4kT, 4kTkTThenFi/2 F6.01.9020 310cm(b)no2 17一4.710 6.03.1810183cm4.31FortheelectronconcentrationTheBoltzmannapproximationapplies,soorDefineThenTofindmaximumnEnx,setorwhichyieldsFortheholeconcentrationUsingtheBoltzmannapproximationorDefineThenTofindmaximumvalueofpEpxsetdpx——— 0Usingtheresultsfromdxabove,wefindthemaximumat4.32(a)Silicon:WehaveWecanwriteForEcEd0.045eVandEdEf3kTeVwecanwriteor_ _ _17 3no2.4510cmWealsohaveAgain,wecanwriteForEfEa3kTand(b)1.81062 4 3Po is-1.0810cm3106 3no Poni1.810cmEaE 0.045eVThen8ni7.58010cm.. 一15 3Po Na410cmorPo9.121016cm(b)GaAs:assumeEcEd0.0058eVnoThenorno1.871610cm827.58010 2 3 15——1.4410cm410ni 3.8531010cm14 3n。 Nd10cmAssumeEa0.0345eVThenorPo9.2016103cm _1023.85310 7Po 1.4810cm104.364.33Plot~ 13(a)Ge:ni2.410cm4.34(a)Po15 15 341510 310cm- 2NdNd2(i)no > 2 nino(b)noNd1021.51015-31016310cm4 37.510cmPo1021.5101610__ 37.510cm(c)noPoni1.51010cmor15 3noNd210cm2.881011cm316 15(ii)PoNaNd10 71031015cm31.921011cm36 3(b)GaAs:ni1.810cmPoNa7.33411210ni7.3341510cm10no154101.348104.35no(a)ni1.7221.029一 131.72210141.029102nino11cmcmPonoNd61.810c一c15210(ii)PoNa15210cm3 31.6210cm15Nd310cm1310cm1410cm _122.881031015 3?cm3cm1.81062 3 3no 15— 1.0810cm310(c)TheresultimPliesthatthereisonlyone3 3minoritycarrierinavolumeof10cm621.810153103 31.0810cmNd31016cm4.37ForthedonorlevelorWehaveNoworThenor4.38文檔來源為：從網(wǎng)絡(luò)收集整理文檔來源為：從網(wǎng)絡(luò)收集整理.word版本可編輯.歡迎下載支持4.424.42NaNdp-typeSilicon:TOC\o"1-5"\h\zor13 3po1.510cmThen_2 102ni 1.510 7 3no - 13—1.510cmp。 1.510Germanium:or13 3po 3.2610cm

4.43Plot4.44Plot4.454.504.454.50Thenno2nipo1322.410133.264101.761013cmGalliumArsenide:13 3poNaNd1.510cmandn2 1.81062no — yr-0.216cmpo 1.5104.46(a) Na Nd p-typeMajoritycarriersareholes16 31.510cmMinoritycarriersareelectronsno2nrpo1021.510iT-1.5101.5“4 310cm(b)Boronatomsmustbeadded4.39(a)NdNan-typeTOC\o"1-5"\h\z14 3810cm

16 3SoNa3.510cm1021.510 3no 4.510cm16510po2ni1.5no10210“c14-102.81105cm34.471.51010Na15 34.810cm(a)ponin-typenono154104 35.62510cm1021.51041016 31.12510cmelectronsaremajority4.404.40carriers4 3po210cm25po1.510102

210515 31.12510cmholesareminoritycarriers16soNd1.82510cm4.48T(K)kT(eV)4.48T(K)kT(eV)- 3、ni(cm)ForGermaniumpo號J3 n2 andno po n-type4.41 _12ni1.37610cm 4.41 _12ni1.37610cm 3Sono6.8810cm,― 12 3Then po 2.7510cm 3sothatNa2.06410cmPlotT(K)一/一3、po(cm)EFi Ef(eV)?? _15Na10cm文檔來源為：從網(wǎng)絡(luò)收集整理文檔來源為：從網(wǎng)絡(luò)收集整理.word版本可編輯.歡迎下載支持4.49For1014cm34.49For1014cm3,EcEf0.3249eV10cm3,EcEf0.2652eV1610cm3,EcEf0.2056eV1710cm3,EcEf0.1459eVFor1410cm3,EfEFi0.2280eV1510cm3,EfEFi0.2877eV10cm3,EfEFi0.3473eV10cm3,EfEFi0.4070eV4.51AtT200K,kT0.017267eVT400K,kT0.034533eVT600K,kT0.0518eVAtT200K,ni7.638104cm3AtT400K,ni2.3811012cm3AtT600K,ni9.7401014cm3AtT200KandT400K,15_ 3poNa310cmAtT600K,3.2881015cm3Then,T200K,EFiEf0.4212eV4.52(a)For-. 一14Na10cm3,EFiEf0.4619eVNa1015cm3,EFiEf0.5215eV16Na10cm3,EFiEf0.5811eV一 17Na10cm3,EFiEf0.6408eV(b)3,For-. 一14Na10cmEfE0.2889eVNa1015cm3,EfE0.2293eV16Na10cm3,EfE0.1697eVNa1017cm31EfE0.1100eVEFiEf 0.0630eV4.55(a)SiliconT400K,EFiEf 0.2465eVT600K,4.53orEFi Emidgap 0.0447eV(a)ImpurityatomstobeaddedsoEmidgap Ef0.45eVp-type,soaddacceptoratoms(ii)EFiEf0.04470.450.4947eVThenorTOC\o"1-5"\h\z13 3po Na1.9710cm4.54soor.. _ _16 3Nd1.210cm_ _ _Nc(i)Ec Ef kTln-Nd0.0259ln192.810156100.2188eV(ii)EcEf0.21880.02590.1929eVNd1.6311610cm3Nd15610Nd1.0311610cmAdditional, 310 、，0.0259ln 0.3161eV1.510? 310160.0259ln 0.3758eV1.5100.2786eV0.06945eVdonoratoms(b)GaAs(i)EcEf4.70.0259ln——171015100.15936eV(ii)EcEf 0.159360.02590.13346eV15 32.71810cm3Nd1510Nd15 31.71810cm0.0259ln7.031810 、，—— 0