2023/1/4WaferFabricationProcessTechnology(英文版)2022/12/27WaferFabricationPr1Wafer-Fabrication-Proces教學(xué)講解課件2Content0.5umCMOSprocessflow&crosssection0.18umCMOSprocessflow&crosssectionPCMintroductionContent0.5umCMOSprocessflow3CMOSStartingwithasiliconwaferCrossSectionoftheSiliconWaferMagnifyingtheCrossSectionCMOSStartingwithasiliconwa4CMOSn/p-wellFormationGrowThinOxideDepositNitrideDepositResistsiliconsubstrateUVExposureDevelopResistEtchNitriden-wellImplantRemoveResistCMOSn/p-wellFormationGrowThi5CMOSn/p-wellFormationsiliconsubstrateGrowOxide(n-well)RemoveNitridep-wellImplantRemoveOxideTwin-wellDrive-inp-welln-wellRemoveDrive-InOxideCMOSn/p-wellFormationsilicon6siliconsubstratep-welln-wellCMOSLOCOSIsolationGrowThinOxideDepositNitrideDepositResistUVExposureDevelopResistEtchNitrideRemoveResistsiliconsubstratep-welln-wellC7CMOSLOCOSIsolationsiliconsubstratep-welln-wellDepositResistUVExposureDevelopResistFieldImplantBRemoveResistGrowFieldOxideFoxRemoveNitrideRemoveOxideCMOSLOCOSIsolationsiliconsub8siliconsubstratep-welln-wellGrowScreenOxideCMOSTransistorFabricationVtImplantDepositResistUVExposureDevelopResistPunchthroughImplantRemoveResistRemoveOxideFoxsiliconsubstratep-welln-wellG9siliconsubstratep-welln-wellGrowGateOxideCMOSTransistorFabricationDepositPolySiPolySiImplantpolySipolySiDepositResistUVExposureDevelopResistEtchPolySiRemoveResistFoxsiliconsubstratep-welln-wellG10siliconsubstratep-welln-wellCMOSTransistorFabricationDepositThinOxideDepositResistUVExposureDevelopResistn-LDDImplantRemoveResistFoxpolySipolySisiliconsubstratep-welln-wellC11siliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp-LDDImplantRemoveResistDepositSpacerOxideEtchSpacerOxideFoxpolySipolySisiliconsubstratep-welln-wellC12siliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistn+S/DImplantn+n+RemoveResistFoxpolySipolySisiliconsubstratep-welln-wellC13siliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp+S/DImplantp+p+RemoveResistFoxpolySipolySin+n+siliconsubstratep-welln-wellC14siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositBPTEOSBPTEOSBPSGReflowPlanarizationEtchbackDepositResistUVExposureDevelopResistContactEtchbackRemoveResistFoxpolySipolySin+n+p+p+siliconsubstratep-welln-wellC15siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepostMetal1Metal1DepositResistUVExposureDevelopResistEtchMetal1RemoveResistFoxpolySipolySip+p+n+n+BPTEOSsiliconsubstratep-welln-wellC16siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositIMD1IMD1DepositSOGSOGPlanarizationEtchbackDepositResistUVExposureDevelopResistViaEtchRemoveResistFoxpolySipolySip+p+Metal1n+n+BPTEOSsiliconsubstratep-welln-wellC17siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositMetal2Metal2Metal2DepositResistUVExposureDevelopResistEtchMetal2RemoveResistDepositPassivationFoxpolySipolySip+p+Metal1n+n+BPTEOSIMD1SOGPassivationsiliconsubstratep-welln-wellC180.18umProcessCrosssectionPadoxidePSubstrateODSiN0.18umProcessCrosssectionPa190.18umProcessCrosssectionPSubstrate0.18umProcessCrosssectionP200.18umProcessCrosssectionPSubstratePwellmaskPwellNAPTVTNB11Pwell/NAPT/VTNImplantNwellmaskP31Nwell/P_APT/VTPImplantNwellPAPTVTP0.18umProcessCrosssectionP210.18umProcessCrosssectionPSubstratePwellNAPTVTNNwellNfieldPAPTMask132HFWetdipandGrowGateoxide-20.18umProcessCrosssectionP220.18umProcessCrosssectionPoly

NLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyNLDDimplantNLDD114maskPLDD113maskPLDDimplant0.18umProcessCrosssectionPo230.18umProcessCrosssectionPoly

PLDDPLDD

NLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyPLDD197mask(3.3V&1.8V)P-pocket/PLDDimpNLDD116mask(3.3V)NLDD2-1As/NLDD2-2P31imp0.18umProcessCrosssectionPo240.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDPSD197maskNSD198maskNSDimp0.18umProcessCrosssectionPo250.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSD0.18umProcessCrosssectionPo260.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxide0.18umProcessCrosssectionPo270.18umProcessCrosssectionPolyi

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxide0.18umProcessCrosssectionPo280.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyiPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideIMD-1WWWW0.18umProcessCrosssectionPo290.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideIMD-1WWWWMetal-1Metal-20.18umProcessCrosssectionPo300.18umProcessCrosssectionMetal-1IMD-1A-Si

PwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideMetal-4IMD-4WWWIMD-5Metal-6IMD-3WWMetal-2IMD-2Metal_5WWWWWWWW0.18umProcessCrosssectionMe31PCMPCM就是ProcessControl&Monitor的簡(jiǎn)稱；同時(shí)，PCM也稱為WAT：WaferAcceptTest；PCMPCM就是ProcessControl&Moni32PCM--PurposePCM主要把線上一些工藝異常進(jìn)行及時(shí)的反映，在產(chǎn)品入庫(kù)前對(duì)其進(jìn)行最后一道質(zhì)量的檢驗(yàn)，其作用歸納起來(lái)，主要有如下幾點(diǎn)：

（1）對(duì)產(chǎn)品進(jìn)行參數(shù)質(zhì)量檢驗(yàn)；

（2）監(jiān)控在線工藝對(duì)電參數(shù)的影響，以及工藝的波動(dòng)；（3）判定WAFERPASS/FAIL的一個(gè)重要依據(jù)，客戶會(huì)根據(jù)PCM測(cè)試情況，決定接收、或拒收WAFER。(4)Yieldanalysis

PCM--PurposePC33PCM–keyitems（1）Vt（2)BVD（3）Ion（4）Leakage（5）SheetRs（6）Rc（7）Capacitor(8)OthersPCM–keyitems（1）Vt34PCM–TestLocationPCM–TestLocation35PCM—MOSTransistorPCM—MOSTransistor36PCM–VtmeasurePCM–Vtmeasure37PCM–BVDmaesurePCM–BVDmaesure38PCM–LeakagemeasurePCM–Leakagemeasure39PCM–I-VcurvePCM–I-Vcurve40PCM–InterPolyCapacitorMETALPOLY2POLY1POLY2POLY1FOXP-SUBW(CapacitorWidth)L(CapacitorLength)CAPACITORCAPACITORPCM–InterPolyCapacitorMETAL41PCM–PolyRsWLPSubstrateLWPSubstrateHighResistorlayerPoly1Metal1Poly1(LowRs)(HighRs)PolyResistorMarkinglayerPCM–PolyRsWLPSubstrateLWP42PCM–NWRsP-SUBNWellMetalN+ContactNCOMP(N+implant)NwellLN+NwellResistorMarkingLayerPCM–NWRsP-SUBNWellMetalN+Co43PCM–N+RsP-SUBMetalContactNCOMP(N+implant)LN+N+ResistorMarkingLayerPCM–N+RsP-SUBMetalContactNC44PCM–P+RsP-SUBMetalPCOMP(P+implant)NwellLP+NwellPCM–P+RsP-SUBMetalPCOMPNwel45PCM–P+/NWPCOMP(P+implant)P-SUBNWellMetalP+N+ContactNCOMP(N+implant)NwellW1L1W2L2PCM–P+/NWPCOMPP-SUBNWellMet46PCM–N+/PsubNCOMP(N+implant)P-SUBMetalN+P+ContactPCOMP(P+implant)NwellW1L1W2L2PCM–N+/PsubNCOMPP-SUBMetalN+47PCM--LPNPP+P+P+N+N+NWellP-SubMetalNCOMP(N+implant)NwellPCOMP(P+implant)LPNPMarkingLayerPCM--LPNPP+P+P+N+N+NWellP-Sub48PCM--VPNPP+P+P+N+N+NWellP-SubMetalNwellNCOMP(N+implant)PCOMP(P+implant)PCM--VPNPP+P+P+N+N+NWellP-Su49

Thanks!Thanks!502023/1/4WaferFabricationProcessTechnology(英文版)2022/12/27WaferFabricationPr51Wafer-Fabrication-Proces教學(xué)講解課件52Content0.5umCMOSprocessflow&crosssection0.18umCMOSprocessflow&crosssectionPCMintroductionContent0.5umCMOSprocessflow53CMOSStartingwithasiliconwaferCrossSectionoftheSiliconWaferMagnifyingtheCrossSectionCMOSStartingwithasiliconwa54CMOSn/p-wellFormationGrowThinOxideDepositNitrideDepositResistsiliconsubstrateUVExposureDevelopResistEtchNitriden-wellImplantRemoveResistCMOSn/p-wellFormationGrowThi55CMOSn/p-wellFormationsiliconsubstrateGrowOxide(n-well)RemoveNitridep-wellImplantRemoveOxideTwin-wellDrive-inp-welln-wellRemoveDrive-InOxideCMOSn/p-wellFormationsilicon56siliconsubstratep-welln-wellCMOSLOCOSIsolationGrowThinOxideDepositNitrideDepositResistUVExposureDevelopResistEtchNitrideRemoveResistsiliconsubstratep-welln-wellC57CMOSLOCOSIsolationsiliconsubstratep-welln-wellDepositResistUVExposureDevelopResistFieldImplantBRemoveResistGrowFieldOxideFoxRemoveNitrideRemoveOxideCMOSLOCOSIsolationsiliconsub58siliconsubstratep-welln-wellGrowScreenOxideCMOSTransistorFabricationVtImplantDepositResistUVExposureDevelopResistPunchthroughImplantRemoveResistRemoveOxideFoxsiliconsubstratep-welln-wellG59siliconsubstratep-welln-wellGrowGateOxideCMOSTransistorFabricationDepositPolySiPolySiImplantpolySipolySiDepositResistUVExposureDevelopResistEtchPolySiRemoveResistFoxsiliconsubstratep-welln-wellG60siliconsubstratep-welln-wellCMOSTransistorFabricationDepositThinOxideDepositResistUVExposureDevelopResistn-LDDImplantRemoveResistFoxpolySipolySisiliconsubstratep-welln-wellC61siliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp-LDDImplantRemoveResistDepositSpacerOxideEtchSpacerOxideFoxpolySipolySisiliconsubstratep-welln-wellC62siliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistn+S/DImplantn+n+RemoveResistFoxpolySipolySisiliconsubstratep-welln-wellC63siliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp+S/DImplantp+p+RemoveResistFoxpolySipolySin+n+siliconsubstratep-welln-wellC64siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositBPTEOSBPTEOSBPSGReflowPlanarizationEtchbackDepositResistUVExposureDevelopResistContactEtchbackRemoveResistFoxpolySipolySin+n+p+p+siliconsubstratep-welln-wellC65siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepostMetal1Metal1DepositResistUVExposureDevelopResistEtchMetal1RemoveResistFoxpolySipolySip+p+n+n+BPTEOSsiliconsubstratep-welln-wellC66siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositIMD1IMD1DepositSOGSOGPlanarizationEtchbackDepositResistUVExposureDevelopResistViaEtchRemoveResistFoxpolySipolySip+p+Metal1n+n+BPTEOSsiliconsubstratep-welln-wellC67siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositMetal2Metal2Metal2DepositResistUVExposureDevelopResistEtchMetal2RemoveResistDepositPassivationFoxpolySipolySip+p+Metal1n+n+BPTEOSIMD1SOGPassivationsiliconsubstratep-welln-wellC680.18umProcessCrosssectionPadoxidePSubstrateODSiN0.18umProcessCrosssectionPa690.18umProcessCrosssectionPSubstrate0.18umProcessCrosssectionP700.18umProcessCrosssectionPSubstratePwellmaskPwellNAPTVTNB11Pwell/NAPT/VTNImplantNwellmaskP31Nwell/P_APT/VTPImplantNwellPAPTVTP0.18umProcessCrosssectionP710.18umProcessCrosssectionPSubstratePwellNAPTVTNNwellNfieldPAPTMask132HFWetdipandGrowGateoxide-20.18umProcessCrosssectionP720.18umProcessCrosssectionPoly

NLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyNLDDimplantNLDD114maskPLDD113maskPLDDimplant0.18umProcessCrosssectionPo730.18umProcessCrosssectionPoly

PLDDPLDD

NLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyPLDD197mask(3.3V&1.8V)P-pocket/PLDDimpNLDD116mask(3.3V)NLDD2-1As/NLDD2-2P31imp0.18umProcessCrosssectionPo740.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDPSD197maskNSD198maskNSDimp0.18umProcessCrosssectionPo750.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSD0.18umProcessCrosssectionPo760.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxide0.18umProcessCrosssectionPo770.18umProcessCrosssectionPolyi

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxide0.18umProcessCrosssectionPo780.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyiPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideIMD-1WWWW0.18umProcessCrosssectionPo790.18umProcessCrosssectionPoly

PSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideIMD-1WWWWMetal-1Metal-20.18umProcessCrosssectionPo800.18umProcessCrosssectionMetal-1IMD-1A-Si

PwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideMetal-4IMD-4WWWIMD-5Metal-6IMD-3WWMetal-2IMD-2Metal_5WWWWWWWW0.18umProcessCrosssectionMe81PCMPCM就是ProcessControl&Monitor的簡(jiǎn)稱；同時(shí)，PCM也稱為WAT：WaferAcceptTest；PCMPCM就是ProcessControl&Moni82PCM--PurposePCM主要把線上一些工藝異常進(jìn)行及時(shí)的反映，在產(chǎn)品入庫(kù)前對(duì)其進(jìn)行最后一道質(zhì)量的檢驗(yàn)，其作用歸納起來(lái)，主要有如下幾點(diǎn)：

（1）對(duì)產(chǎn)品進(jìn)行參數(shù)質(zhì)量檢驗(yàn)；

（2）監(jiān)控在線工藝對(duì)電參數(shù)的影響，以及工藝的波動(dòng)；（3）判定WAFERPASS/FAIL的一個(gè)重要依據(jù)，客戶會(huì)根據(jù)PCM測(cè)試情況，決定接收、或拒收WAFER。(4)Yieldanalysis

PCM--PurposePC83PCM–keyitems（1）Vt（2)BVD（3）Ion（4）Leakage（5）SheetRs（6）Rc（7）Capacitor(8)OthersPCM–keyitem