LLCMOSFETLLCZVS，高效率，高頻 全負(fù)載范圍內(nèi)實(shí)現(xiàn)原邊MOSFETQsQsf0ofLrandNormalized

變壓器變 電感比

f0

nVin/

n

Q n2Lr/Lr/IRMS

VO n n4R2Tinductor inductor Primaryside1 5248n4R2TIRMS_S

O 14 ILm(max

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Lm

TurnoffTurnoffRMSCurrent

DeadtimeLossLoss

Deadtime Deadtime 2 LnQ

n2

0.050.150.250.350.450.550.650.750850.95

n

LmLn

Lr

Cr

Ln,Q,??eq??eq=????(????)???eq=??(??)??eq=??eq=?????(????)???2??????????????=??eq??eq=??eq???eq=??(??)??eq??eq=??eq???eq=??(??)

Co(tr)… Co(er)…????eq=??eq???eq=??(??)輸出等效電容輸出等效電容 100150200250300350400450漏源電壓

tdead

普通VDMOS和SJMOS性能對比 Rdson*QgRdson*QgVDMOSFET1

VDMOSFET2

SJMOSFETSuperJunctionSJMOS與GaNHEMTMOS性能對比Rdson*QgRdson*Qg

CoolMOSCoolMOSCoolMOSCoolMOSGen GenCoolMOSCoolMOSCoolMOSCoolMOS

GaNMOSFETSJMOS和GaNHEMTQossSJGaNHEMTSJGaNSJMOS和GaNHEMTMOSSJMOS和SiCMOS圖SiCMOSFET650V/120mOhmQgs2通道1MOS漏源電壓VDS(黃色100V/DIV);通道2:MOS柵源電壓VGS(綠色,5V/DIV);通道3:MOS漏極電流ID(紫色,5A/DIV);Time:1us/DIV圖LSD20N60FQgs2通道1MOS漏源電壓VDS(黃色100V/DIV);通道2:MOS柵源電壓VGS(綠色,5V/DIV);通道3:MOS漏極電流ID(紫色,5A/DIV);Time:1us/DIV,QsQsf0ofLrand

@10%

@10%SJVDMOSVs.VDMOSSJVDMOSCH1:VDS100V/div;CH3:ISDTime:IF=10A,diF/dt=100A/us,

VDMOSCH1:VDS100V/div;CH3:ISDTime:IF=10A,diF/dt=100A/us,VDMOS和SJMOS的盡層展開過程對SJMOSFET體二極管反向恢復(fù)特性

CH1:VDSCH3:ISDTime:IF=10A,SJMOSSJMOSSJMOSSJSJMOSSJMOSSJMOSFET體二極管反向恢復(fù)特性

CH1:VDSCH3:ISDTime:IF=5.5A,SJMOSSJMOSSJMOSSJSJMOSSJMOSCH1:VDS100V/div;CH4:ISDTime:IF=5.1A,Rg=51Ω,

CH1:VDS100V/div;CH4:ISDTime:IF=5.1A,Rg=51Ω,LontenVs.ESJMOSCH1:VDS100V/div;CH3:ISDTime:IF=5.5A,diF/dt=100A/us,

CH1:VDS100V/div;CH3:ISDTime:IF=5.5A,diF/dt=100A/us,SiCMOSFETSiC650V/120CH1:VDSCH3:ISD2A/divTime:50ns/divGaNHEMTcascadeMOSFETGaNHEMTcascadeMOSFETGaNHEMTcascadeMOSFET和SJMOS體二極管GaNHEMTE-ModeGaNHEMTE-Mode LLCMOS體二極管反向恢復(fù)（示意圖LLCMOS體二極管反向恢復(fù)（仿真波形Vg1/Vg1/VcrVcr/IS1/IS1/I_Lr/I_Lr/I_LmI_Lm/IS2/IS2/

LLCPWM模式啟動波形

1:Vgs12:Vds1

2:Vds1(S1LLC啟動仿真波形（<50dutycycle啟動LLCControllerN