1、催化的_點總結2015,07,271有關光催化2.有關氣體傳感【二者的相同點是都運用到了半導體的能帶理論】光催化主要用是催化劑利用太陽能轉換為化學能，來進行催化降解有機染料或對水進行殺菌處理氣體傳感（主要是用金屬氧化物半導體作為傳感材料），通過在高溫下對不同氣體具有電流響應信號，從而達到岀現不同的電阻響應，以此為信號，來檢測氣體的效果。這里開始講光催化光催化方面存在的問題主要有:A延緩電子空穴的復合B將利用光譜范圍從窗外區(qū)域擴展到可見光區(qū)。C.催化劑的回收改進方法：催化劑分為TiO2和非TiO2兩種類型，TiO2（它應用的紫外光僅占太陽光的4%）是研究最廣泛的催化劑，針對以上催化劑存在的問題，

2、做岀的努力包括：合成方法的改進，調控材料的內部構造、形貌和尺寸等。TiO2催化劑和非TiO2催化劑（包括金屬氧化物、硫化物、鋌金屬酸鹽、基于石墨烯的材料、碳氮催化材料和自然催化劑）要做的改進包括貴金屬沉積、非金屬摻雜、染料敏化。6光催化機理:光激發(fā)電子空穴對的分離，我們要做的是延緩電子空穴對的分離光催化性能的提高本質因素導體帶隙的電子勢能，具體就是導帶的電勢要比O2/O2的氧化還原電勢更負，價帶的電勢要比-OH/OH-的氧化還原電勢更正。例如Bi2WO6價帶中空穴的氧化電勢+1.59V-OH/OH-的氧化還原電勢+1.99VBi2WO6產生的空穴不會與OH-/H2O反應產生oh；SnO2粵帶底

3、中還原電勢-0.11V06nm)H3O2,6WangetaL,2011AgBr-TiO2DepositionprecipitationmethodNanoparticles.coHS.aureus-7login1hr*7login40minXenonlampwithfilteT(k420nm)Hd05,OHLanetal.F2007A商-Ag-BiiWCkHydrothemnalNanoparticles.nanoplatescoti-71ogin15minXenonlampwithfilteT(k400nm)OHZhangetalr2010BgHydrothemnalSubmicrorods

4、.coti-7login120minXenonlampwithfilteT(k400nm)0Hrh*WangetaLP2015Cdln各UltrasonicspraypyrolysisMacrospheTesE.coti-7Login3hrXenonlampwithfilteTk400nm)HiOiWangetal.,2013a,bBiVqHydrothermalNanotubesE.coti-Slogin3hrXenonlampwithfilteT(k400nm)e-Wangetal.?2012a.b,cNatura!sphaleriteNaturalkCicioparticlesE.cot

5、iM.barfeeri-7Login3hr-7Login10hrFluorescenttubesHiO2,e-Chenetal.,2010,ChenetaLf2015NaturalmagneticsphaleriteNaturalkticroparticlesE.ati-7login6hrFlu-orescenttutwsONH2O2Xiaetal.,2Q13RedphosphorusCommercialkCicioparticlesE.coti-71ogin90minXenonlampwithfilter(k400nm)OHtOj,HaOiXiaetrL,2015-近些年大家研究的催化材料L

6、ETTERpubs承org/NanoLettNANOTERS)FollowingChargeSeparationontheNanoscaleinCu2O-AuNanoframeHollowNanoparticlesMahmoudA-Mahmoud,WeiQian/andMostafaA.El-Sayed*LaserDynamicsLaboratory,Schoo!ofChemistryandBiochemistry,GeorguInstituteofTechnology,Atlanl召Georgia30332-0400,UnitedStatesABSTRACT:GoldnanoframeH2O

7、+6+OH：0246810Tknedetay(R)2011/07Cii?。一AunanotrameswithdifferentnanolayerthicknessesofCu2Owereprepared,andtheirphotocatalylicpropertiesmaqueoussolutionswerestudied.CuOsemiconductorexcitationleadstoelectronholeseparabon.Inaqueoussolution,theholeisknowntooxidizewatertoproducehydroxylradicalswhoseconcen

8、tration(andthatoftheholes)canbemonitoredbytherateofthedegradationofdissolvedmethylenebluedye.Theexcitonlifetimeisdeterminedbyfemtosecondtechniquesandisdeterminedbyelectronholerecombinationwhichdependsontheratesofanumberofcompetingprocessessuchelectronorholetransferto文章屬于金屬氧化物半導體與貴金屬Au復合的一種，主要討論Cu2O厚

9、度的變化對催化性能的影響。運用的飛秒技術測量電子空穴分離時間FigureI.TEMimagesof80nmCii2O-Aiinanoframeofdifferentthickness；thethickincreasesinthisorderCu2O(l)-Au(A),Cu2O(2)-Au(B),Cu2O(3)-Au(C),andCu2O(4)-Aunanoframes(D).Thescalebarsare100nm.上而是4個壁厚不同的Cu2O,AD壁厚依次增加，這里的催化實驗進行橫向比較，比較不同厚度的CU2O的催化效果。催化降解MB002400220020wE001800160.01400

10、120010Cu?O(4)-AuCu?O(3)-AuCu2O(2)-AuCu2O(1)-AuH-Cu.OnM/minijnthefirst10min:Cu0O(4)-Au=2.5nM/Cu?O(3)-Au=1.4nM/minCu.O(2)-Au=0.92nM/minu?O(1)-Au=0.62nM/min0102030,.405060Time(min)Figure5.TheeffectofphotochcmicallyexcitedCu2OnanosphcrcsandCuzOwithdiflerentthicknesses,coatedaconstantsheUthicknessofAushe

11、llontherateofphotocatalyticdestructionofMBinsolutionTheinitialrateisfoundtoincreasebyincreasingtheCu2Othickness通過這兩個吸收光譜，我想表達的意思是，通過與貴金屬復合后，材料應用的光區(qū)域擴展了oolmqjosqv0.2-0130040050060070080090010001YoO12001300Wavelength(nm)FigureS4.UV-visabsorptionspectraofvaiiousCgOnaiiocrystalssynthesized.Crystal-Plane

12、DependentEtchingofCuprousOxideNanoparticlesofVariedShapesandTheirApplicationinVisibleLightPhotocatalysisJayaPal/MainakGanguly/ChanchalMondal/AninditaRoy/YuichiNegishiandTarasankarPal*DepartmentofChemistIndianInstituteofTechnology,Kharagpur-721302,WestBengal,IndiaDepartmentofAppliedChumistiy.TokyoUni

13、versityofScience,Tokyo1628601,Japan0SupportinginformationABSTRACT:Wereportasimple,facile,surtacta.nt-freechemicalroutetofabricatemorphologicallydifferentCuOnanopartidessuchasoctahedron,truncatedoctahedron,hoLlowoctahexlronj,cubeandspherebyvaryingthehy&olyzingagentscomplexingagent?andreducingagentsTh

14、enthecomponentiaJandmorphologicalevolutionofCu2Onanopartideshavebeenstudiedindependently,employingdifferentetchingagents,suchasaqueousNaOH,triethylamine(TEA),andoxilicacidsolution.Particlesofvariedshapesandcompositionsresultedfromtheetching,andthoseparticleswerecharacterizedbydiflerentphysicalmethod

15、sTheoxidativedissolutionofrftdrphologicillydiffereAtCuOhAndpArticldwithdiflerdrttetedtingd中亡ilckOrt：nanopartides.OxalicacidetchingcausesthetheexposedcrystalplanesDuringoxidativedissolutioninaqueousoxalicacidsolution,itisrealizedthatthestabilityofthe(100)cr*staJplaneishigherthanthatofthe(ill)crystalp

16、laneAmongalltheetchingreagentsused,onlyoxalicacidexhibitsskapetransformationoftkeas-preparedCu2OfbntitiOrldlCubdSirtdhdllowISLehirlgpFbduCtfwith2SO%reduCtiOilof亡dgCleilgthComparedtthatdfdCtahIrAl,2013/11truncatedoctahedral,andhollowoctahedralCuOnanopartidcs.Butill-dciincdcubesarealwaysobtainedas.the

17、etchingproductswitha40%reductionofsizecomparedtothatofCu2Ocubesandspheres.As-preparedCu2Onanoparticlesandchemicallyetchedproductsexliibitfacet-dependentphotocataljlicactivityundervisiblelightirradiationwkeremineralizationofCOrigOredtk出place.ExperiitleritallyithASconcludedphdt(Ctllytidactivityofdiile

18、reiltparticlesbeirS玄vldg亡relationshipwithexposederystalplanes,surfacearea,andpartidesizeforeongoreddegradationInterestingly,NaOH-etehedproductwithhollowoctahedralmorphologybearingmany(111)facetsdemonstratesthehighestphotoatalyticactivit)f這篇文章講的是通過對半導體材料形貌的控制，使其光催化范圍達到可見光區(qū)這幅圖呈現了不同的形貌，以藍色的八面體Cu2O,進行加堿

19、刻蝕后，會形成表面粗糙或空心的結構，這個藍色系列的催化活性高，因為暴露的活性面較多Scheme2.SchematicRepresentationofChemicalEtchingofCu2ONanoparticlesHavingVariedShapes;SameColoroftheEtchedProductsObtainedfromCu2ONanoparticleofaParticularShapea,a28401ooo(ne)eoueqosq200300400500600700Wavelength(nm)aoueqosqinilialAfteradsorption10min5min00200

20、300400500600700WvalonnthZnm(nra)aoueqosqOcuboctahedra,andCu2Ooctahedrarespectively.TheseCuvODTiOipolyh-cdrademonstratedajienhancedphotocatalyticddrdatiohefltiCtOhMdthyleneBlue(MB)arid4-rtitr(phertdl(4-NP)undervisiblelightillumination,becauseoftheenhancedchargecarrierseparationbytheformationofCu2OTiO

21、2p-nheterojunctions.Itwasfurtherfoundthattheirphotocatalyticperformancewasalsofacet-dcpCildertt鄒pureCu2Opolyhedra,whilethdphotOdAlytivperfdml-7叫l(wèi)?Ti.02polyheirawasdiflerentfromtheircorrespondingCu,Opolyhedroncores,whichresultedintheirdiflerentsurfacephotovoltagespectrum(SPS)responsesanddifferentphot

22、ocatalyticperformancerankings.這篇文章講的是通過P型的Cu2O與N型的ZnO復合，形成PN結構，同樣使催化范圍延伸到了可見光區(qū)域。亮點是通過XPS譜，計算得到了材料催化性能的依據Cu2OTiO2復合材料，這里對Cu20的形貌進行了調控，不同的形貌在與TiO2復合，形貌改變+復合新的材料使Cu2OTiO2具有更好的催化效果Figure4.SEMandTEMunagesofCu?OTiO2cubes(panels(a)and(b)rcuboctaliedra(panels(c)and(d),andoctaliedra(panels(e)and(f).Tlieinser

23、tsinTEMimagesshowthecorrespondingSAEDpatternsonthecovershellregionsdefinedbytheredsquaie.tS05&31cpdtER_enppaHb血806020Time(D)Rpxrc9.IksiduaiMcmykncBlue(MB)pcrccsiUcwjustreatmenttimeuadeTvisfoieUghttreatnemby(aCujOuryrtL7thwellticcts.ccmpucdwithdutwithnophotoeMdystpresence,ind(b)Cu.ODOjpolvhcdrcompare

24、dwithtiutbynat&cTiO.nnopamResided4nxrophcnol(4-NP)pcrcctitcvctjbucatmntumounJerzbkZghrtreMmentbyCu.OgTiO;p-ncdwnhCtijOcubiKtaliedraandthi!withnophotzidypre*enc根據上面降解MB得到的數據說明，根據圖C紅色曲線得到Cu2OTiO2效果最好運用光致發(fā)光譜來探究材料的電子空穴的分離效果，發(fā)現八面體的Cu2OTiO2分離:寫效果最好tlucby-64oo2ooo300350400450500550600Wavelength(nm)Figure8.

25、Surfacephotovoltagespectroscopy(SPS)spectraofCu2O(2)TiO2coreshellpolyhedra,comparedwiththatoftheas-synthesizedCu2OcuboctahcdraNanoscaleRSCPublishingPAPERViewArticleOnlineViewJournal|VrewIssueCitethis:HanoscRe.2013.52938Carrierconcentration-dependentelectrontransferinCu2O/ZnOnanorodarraysandtheirphot

26、ocatalyticperformancetTengfeiJiang,TengfengXie/LipingChen,ZewenFuandDejunWang*Received21stDecember2012Accepted20thJanuary2013DOI:10.1039/c3nr34219k HYPERLINK /nanoscaIeIrtthiimpmhav6電th6l&tronicstrudurihCu20/Zri0nandrodarrays,v/aadjustihth$carviercodentrntiaofCu2O,andappliedthomtophotoeatalysis.Thop

27、hotoindueedtrardfe-rkirt6tiatth$btwnCu20and2n0wxqsystomtiullyinvest!oat6d.Th。Cw2O(pH11.0)/2nOrtanorddarrayshaveth6largestmaghitudofihterfadale?teetrkfield,andphotoinducdchwrgisearrh&疔can血paratodrapidlyandeffidrttly,whkhgeneratesth$high。phot(xatalytieffidhdyfortherduetionofrrithylvidlogen.HUYdjundtid

28、fitohstruetiortisxdtindirxtioctopureoforhighly1aetivphotoeatalyits.andakooffersopportunitiestoicwstig占誕th。rdatiohhipbetwnthe6tedronirsis/Recently,considerableattentionhasbeenpaidtoconstructingsemiconductorheterojunctionswithcontrollableinterfaceelectronicstructure?Asisknown,thepropertiesofthejunctio

29、ndominatethebehaviorofphotoinducedchargecarriers,splitting16becauseofitsfavorableabsorptioninthedsiblerangeandadditionaladvantagesofnon-toxicity,lowcostandabundancePhotoinducedchargeseparationinCu20/ZnOheterostructurescanbegTeatlyimprovedduetotheirfavorablebandstructureHowever:,toourknowledge,therea

30、refewreportsinvolvingCu2O/Zn0nanorodarraysforphotocatalysisstudies.Inheterojunctionphotocatalysts,themagn讓udeoftheinterfacialelectricfielddependsonthedifferenceincarrierconcentration.(i.e.Fermileveldifference)betweenthetwo這篇文章是在棒狀ZnO上復合Cu2O顆粒來提高催化效果通過表而光伏法(SPV),SPV法研究Cu2O與ZnO界面間光激電子的轉移，測量材料表面的瞬態(tài)電壓的變

31、化來表征電子空穴的分離效果，做的對比試驗是在不同PH值下，生長得到這些ZnOCu2O結構ZnOCu2O結構，在不同PH值下沉積Cu20的性能不同，PH=11時電子空穴分離效率最好，催化降解甲基紫精效果最好500nm2000.248nmVSpotH;ionDotWOfxpkV3040000XSE1030審ZnO(101)Fig.1SEMimagesofZnOnanorodarrays(a)andCu2O(pH11.0)/ZnOnanorodarrays(b),TEMimagesofZnOnanorods(c)andCu2O(pH11.0)/ZnOnanorod(d),HRTEMimageofCu

32、2O(pH11.0)/ZnOnanorod(e).ZnOCu2O(pH11.0)/ZnOCu2O(pH10.0)/ZnOCu2O(pH9.0)/ZnO300800400500600700Wavelength(nm)Fig.3UV-vistransmittaneespectraofZnOnanorodarraysandCu2O/ZnOnanorodarrays.通過這幅圖可以看岀單獨的ZnO納米棒吸收峰在360nm處，復合Cu2O后，吸光區(qū)延伸到可見光區(qū),達到利用可見光的目的(a)圖中ZnOCu2O材料在PH=11時，SPV的頻率在88Hz時,能達到最大值，說明該復合材料擁有較大的SPV值；(b

33、)中Cu2O/ZnO納米棒陣列的SPV值與光強度成正比，所以該材料具有較大的SPV值，利用光的效率高150511(弍)o4oudCu2O(pH11.0)/ZnOaa5053a65oolld1001000Modulationfrequency(Hz)345678910Lightintensity(mW/cm2)Fig.5(a)ModulationfrequencydependentSPVofCu2O/ZnOnanorodarraysat532nm.Thelightintensityis10mWcm2,(b)LightintensitydependentSPVofCu2O/ZnOnanorodar

34、raysat532nm.Themodulationfrequencyis77H2DispersedCu2OOctahedronsonh-BNNanosheetsforp-NitrophenolReductionCaijinHuanWciqingYc,QiuwenLiu,andXiaoqingQiu*ResearchInstituteofPhotocaitalysi為StateKeyLaboratoryofPhotocatalysisonEnuirgyandEnrironmentrCollegeofChemistry,FuzhouUniversity523GongyeRoad,Fuzhou350

35、002China0SupportingInformationABSTRACT:Wedemonstrateherethattwo-dimensionalboronnitride(hBN)naAoshcetsbeemployedasarobustsupporting沁bstratttoincorporatefunctionm亡taioxides.TheCuOhBNcompositesakthusobtainedbydispersingCujOoctahedronsonthesurfacesofh-BNnanoiheets.TheOHandNHgroupsonthesurfacesofh-BNnan

36、osheetsarefoundtobebeneficialforanchoringCu2Ooctahedrons.MoreaveTj,theCuiOh-BNcoitipositcsExhibitsuperiorictivitylorthereductionofpaitrophenoltopureCujOcrystal,andh-BNnanosheetsThehBNcomponentinthecompositesphysacriticalroleintheformationandadsorbingofthepnitrophenolateions.,and,atth疋sametime,Cu2Op-

37、nltrophcnol”p-AminphttnifrlMQBoOcCH/1-BNnanosheatsvomponentsreactwithbrohydrideiOilS&ndLruiSkrasurfacehydrogen羊亡&亡sandresultinginthereductionofp2014/07iiitrophenolinto嚴amhiophmoLOurresultsprovide直newapproachfortherationiddesignanddevelopmentofm亡taioxidescompositesandopenthewaytoarangeofimportantappl

38、icationsofh-BbJ-bascdmaterialsKEYWORDS:CuqQhBNpiupporfingiufrifrafes,composikpnitrophenoireduction這篇文章講的是顆粒Cu2O與二維的hBN復合，這里hBN類似與GO的作用，表而具有導電性且具有豐富的基團來固定催化劑，也能吸附待降解的有機染料。H-BN的應用確保了Cu2O具有良好的分散性，更促進了Cu2O與有機染料的接觸與反應，從而提高催化活性Figure3(a)SEXIimagesofCu2O,(b)SEMimagesofCu2OBNcomposites*(c)TEMimagesofCu2OBNc

39、omposites,and(d)thecorrespondingHRTEMimages.Cu2O顆粒均勻的分布在hBN上，就確保了具有更多的催化活性位點，再結合hBN的獨特性質，使催化效果更好2.00.0Wavelength(nm)anB)aoUBqosqp-typeoxidesemiconductorsIntulatingcer.Ehrew*Unl解仏這些問題，大家采取的措施是:1材料結構與形貌的調控2電子敏華（導電陽離子的摻雜）3化學敏化（負載貴金屬）4不同類型材料的復合（例如結）具體來說影響氣敏傳感的因素:(1)多孔性和比表面積摻雜劑顆粒的尺寸，具體就是敏感膜的厚度、晶粒尺寸、多孔性、活

40、性比表面積、晶面、團聚情況、表面幾何參數、傳感器的幾何參數、表面無序度、膜的織構、晶粒網絡和頸部尺寸，外加很重要的就是摻雜劑。提高氣敏傳感的方法:(1)減小材料的尺寸采用分級和空心結構這幾年催化領域制備的一些暴露高活性面的材料可以提升性能，所以氣敏里面也就插了一腳，把活性面暴露岀來，做岀更多的懸空鍵摻雜，摻雜能夠影響到晶粒尺寸、晶體的形貌、體相和表面的化學計量、晶粒間的勢壘的特性及基體材料的電物理特性。摻雜產生的效果包括形成結、產生過渡區(qū)域、改變金屬態(tài)的化合價等。摻雜會導致在價帶或導帶附近形成新的雜質能級,并且能夠改變載流子的濃度和遷移率。（1）調節(jié)形貌（2）摻雜添加劑達到電子敏化的效果（3）

41、負載貴金屬或與氣體材料復合（1）形貌：a小尺寸的納米顆粒易于與氣體分子接觸，從而發(fā)生反應，因此減小尺寸能很大限度的增加氣敏響應。b顆粒間的接觸也是至關重要的，對于靜電紡絲得到的Co3O4納米纖維的響應值達到45.3,而經過超聲處理使其完全成為顆粒后，響應值僅為2.71（兩種形態(tài)的結晶尺寸完全一樣），所以在結晶尺寸一致的情況下，增加顆粒間的直徑尺寸可以增加氣體響應。上面超聲過的納米纖維響應的減少是因為顆粒之間的聯結尺寸的減少（2）控制摻雜來進行電子敏化：調節(jié)電荷載體的濃度，從而影響半導體金屬氧化物的電子與空穴的分離效果；摻雜改變N型的電子濃度，改變P型的空穴濃度，達到響應信號的增強105摻雜影響

42、%1/(eFe摻雜到NiO中增強了材料對氣體的響應值Eddbuoo50據2OWOT6oO11(u)eouss一sea01000200030004000Time($ec)50006000700020406080100Concentration(ppm)因為P型氧化物半導體多數是過渡金屬，不止一種化合價，所以這些材料展現出了較好的選擇性，能促進揮發(fā)性有機物像CO,NH3,C2H6,CH3CHO,C6H6等的氧化，這都是由于材料具有多種氧化態(tài)有關。如用Cr摻雜的NiO對甲苯和二甲苯具有高的選擇性響應，沒有摻雜時就沒有這種效果11.S1xylenetoluenebenzeneHCHOEthanolxy

43、lenetolueneberueneHCHOEthanolFig.12.Responsesof(a)pureNiOhierarchicalnanostructuresand(b)l.15atXCr-dopedNiOhierarchicalnanostructuresto5ppmo-xylcnettoluene,benzene.formaldehydeandethanolmeasuredat400匸accordingtoRefL149.發(fā)現摻雜后在這些揮發(fā)性有機氣體中，Cr-NiO對甲苯和二甲苯具有選擇性【因為Cr對甲基團具有催化氧化作用，致NiO的空穴濃度減少】所以合理的化學敏化摻雜不僅能提高

44、p型半導體對氣體傳感的響應能力，還能提高材料對傳感氣體的選擇能力。這一結果是n型半導體辦不到的pn型材料的復合這兩幅圖是PN材料的不同接觸形式,接觸形式的不同影響材料間電子的傳輸，從而直接影響材料的傳感效果。X/a圖先經過電沉積得到p型和n型，在擠壓在一起。c圖通過濺射和光刻技術形成CuO-ZnO的接觸，這種接觸效果明顯好于之前Table1Vanousp-typemetaloxidesemicondncior-twisedgassurveyedinlicerawre|22-54|.SensormaterulTargetgasStructuresPaniclesi2e(nnn)Cis-conce

45、ntranon(Ppm)Sensing【amp.(C)R2&NiONanoflowersNanotubesNaiw-wiresHemispheresioO-soo20-200150-400|22-26HCHOHollowspheresPorous(hinfilmsThinfilms1000-20005-100240-35027絢COHierarchicalNSs4350020180-2601301NHmNanowiresITendricicwres150-20050ftl(room(*enMKracure)i3】32|(CH3)3NNanowires230500350R5|CuOCjHsOHN

46、lanopartidesNanorodsHierarchicalNSsThinfilm100-10.00050-1000RT-240133-36出rchin-hlNSiPoroustSiftfilm3000loa-iow20O-3D0137381bhSNanowiresNanorodsNanw-hwtsHollowspJieresThinfilm100-15.0000.1-100fCI-30039Y?NHxNanowares1001D.CXK1K!1+11CogGtisOHNaivocubesMiaro5pheres20600010-500135-20007HCHONaiwxriysuls43

47、0-560loa-iooo2001侶1Q叫（硼Nanocubes20100-200ZOO|晌56CiHsOH、佬soporousNSs.Thinfilm20-62125Q-10W30O-4SD1-19-51H2SThinfilm621mao1701511C6H4(CH3)Miaro5pheres12002oa300-450I52|M03O4GHsOHNanowires502.5-100300-450|53)LaCKl-NiOCiHsOHNanofibers100010a400|5叫文獻中各種金屬氧化物半導體對應的檢測氣體EffectofAuNanorodsonPotentialBarrierM

48、odulationinMorphologicallyControlledAuCu20Core-ShellNanoreactorsforGasSensorApplicationsSanjitManoharMa|hi,PrabhakarRai,*SudarsanRaj/Buin-SooChon,KyungKucnPark/andYcon-TacYu*ADivisionofAdvancedMaterialsEngineeringandResearchCentreforAdvancedMaterialsDevelopment,CollegeofEngineering,ChonbukNationalUr

49、aiversityrJeonju561-756rSouthKoreaDepartmentofMaterialsScienceandEngineering,.KoreaUniversity,Seoul1S6-701,SouthKorea0SupportingInformationABSTRACT:InthiswrkAuCu2OeOreshellilAiiOparticks(NPi)weresynthesizedbysimplesolutionrouteandappliedforCOsensingapplications.Au(3iCujOcoreshellNPswereformedbythede

50、positionof3060nmCuxOshelllayeronAunanorods(NR&)having1015nmwidthand4060nmLength.ThemorphologyofAuCuOcoreshellNP$wastunedfrombricktosphericalsJiapebytuningthipHolthesolution.IntheabsenceofAuNRs,cubclikcCuONPshaving200nmdiameterswereformed.ThtsensorhavingAu(Cu0coreshelllayerexliibitedhigherCOsensitivi

51、tycompirtdtobareCuONPsLayer.Tuningofmorpholog*ofAu(Cu.2C)coreshellNPsfrombricktosphericalshapesignificandyloweredtheairresistance.Trnsitiortfrompton-typeresponsewobarvedfor1devieInelow150CItwasdemonstratedthatperformanceofsensordependsnotonlyonthedectxonicsensitizationofAuNRsbutalsoonthemoqholagy-of

52、theAuCuxOcoreshllNPs.PITe=el5odpAuCu,0Sp*iresAuCm2OBHc嗎PTI!-一ocirGdee-earod3ptlsedmre2014/08KEYWORDS;cowshillnaMpariiclcdepletionlayxrgas$ctuors,COP型材料中加入Au后，達到對材料勢壘調節(jié)的效果。這里通過調節(jié)PH值控制AuCu2O材料的形貌，從而改變材料間電子傳輸。調節(jié)用量來控制Cu20殼層的厚度，再調節(jié)PH控制材料的形貌單獨的Cu20半導體結構Figure1.TEManalysisofAuNRs:(a)TEM；(b)SAED；and(candd)I

53、IRTEMofselectedAuNRs.Figure1.Au(SCu2Ocore-shellNPu(a)TEM,(b)HAADF-STEM.(c)SAED,and(d)HRTEMofselectedAuCu2。coreshellNPs.Figure4.TEManalysisofCu2ONPs：(aandb)TEM；(c)SAED；and(d)HRTEMofselectedCu2ONJPs(inaet).00120180240300360420480540Time/min.co.COy-1000ppm-*Cu?ONPs(Cube)AuCu?ONPs(Sphere)oD5052a1.1.6(/9

54、0u9s_sea:Au具有化學和電子敏化的作用，首先Au具有催化作用，可以降低材料與待測氣體反應的化學能；因為Au的功函數(5leV)大于Cu20(4.84eV),這樣就會在Au/Cu2O的界而上形成較高的能帶彎曲，會導致更多的電子與空穴分離，增加了空穴的遷移率，故Au離子的引入會促使電子空穴分離從而減少Cu2O的表面電阻100080060012001600(b)1400400nnn120180240300360420Time/min.Figure5.Responsetransientofaspreparedsensingdeviceatdifferenttemperatures：(a)250

55、Cand(b)50C.ReducedGrapheneOxideConjugatedCu2ONanowireMesocrystalsforHigh-PerformanceNOGasSensorSuziDeng/VerawatiTjaJ川HaiMingFanR*HuiRuTan/DznUSayk.MahiuOlo/SubodhMhaiMlkar,JunWeiJandCliomg,HaurSow，1DepartmemtofFhya.NitiiHuJUnireraty*afSingapore.2SaencrDrive3.Suigaporr11TS42SchoolqSUt-criaLsSuanszcan

56、dEngineering,NanyangT.thndapcJUnnustty,&39*793SuigapmcShaanxiKLeyLaborJtoiyofDepMUbkBtocnedicaLJiLiteriilx.SchoolofCbenuaiJEngineering.Narthw皀口Unnrcity.Xi*an.Slujnxi710069.ChinaInstituteofMaterialsReirchjndEmginwnng,AWSTAK(AgencytarScience,TechnologyandRctexrdi),3RctexrdiLxnJ:,117602.Singjipore*Dcpi

57、rtincntoHngi口ccnngmdAppliedScxncc.CranScldUmvcrs&ty.DcfcivaAcadcEnYoftheUnitedKingdom.ShnvcnlwnSN6SLA.UnieedKingdomSchoolciPhysea.Na；tiojuJUnirerAyofIreLtnxlCialway.Galway.IreLuidMJiinjaporcbistieuteafA-lxnufsetunngTechnolog；,63X07,SingjiporOiMpporrinXInjGrmatwnABSTRACT:Reducedpaphcncoxide(rtiOJwxaj

58、uj：atedCutOnonewiremecorryxtihformedbyntorwlanacalcryctaUiiationinthepresenceofGOandemkidaieunderhydrothemnalconditiDns.Therendtantmesocrystabatcemprsedofhhlyaniscotropieninouintsnxbuildm.gtiLodsjltuIpoarsxidwtinictoctahedralnmorphoLagywitheight111cquiYalentirrystalfuccs.Themrcharaixm*underlying;the

59、FoLkxws；&rsttG：Opronwjlrdagglomw-xtionaflmoqjihouspberiedCuOnaiwpirticleattheinitialstage,kdingtothetranatian.ofgrowthmxxJiAnBmfromcanraitBonaliombyrkmgroirthitoamorphouswherOrtuulciripennigisresponsiblefortkegrowthafthernesocryukandthereductMniofGO(athighSOArchittxtLircwhereporoiasth.Tcrdimensional

60、(3D)framworkrtructuicsinterspersedamongtwo-dirocnsionaL(2Dscqucnti*tonanoircnusgrptUkthroughEracsoscJctransfpnnabeA.nxnovnrebuildinj；bLodrs;third,large-scalejcrlf-OTganiiatwnoftheconcentration)occurdmuluneously.lecultinginuintegratedhybridD)rGOsheets.【口tcrrrtingliy,supcr-mcsocndlslonracdby3Doriented