模擬電子技術(shù)基礎(chǔ)（西安郵電大學(xué)）知到章節(jié)測試答案智慧樹2023年最新第一章測試Whichofthefollowingisnotacommonlyusedsemiconductormaterial’?（

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leadThecharacteristicofanidealdiodearethoseofaswitchthatcanconductcurrent（

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.

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inonedirectiononlyWhenadiodeisdopedwitheitherapentavalentoratrivalentimpurityitsresistancewill（

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.

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decreaseThepiecewiselinearmodel,equivalentcircuitofthediodeconsistsof（

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abattery,asmallresistor,andtheidealdiodeWhenap-njunctionisreverse-biased,itsjunctionresistanceis

（

）.

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high第二章測試Whatisthevalueofthevoltagedroppedacrossforward-biasedsilicondiodesthatareconnectedinparallelwitheachother?

（

）.

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0.7VTheresistorvoltageandresistorcurrentinthiscircuitare（

）.

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11V,11mAWhichofthefollowingcircuitsisusedtoeliminateaportionofasignal?（

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ClipperThecircuitshownhereisa（

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parallelclipperTheZenerdiodemustbeoperatedsuchthat（

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Allofthese第三章測試Intheactiveregion,thebase-emitterjunction

（

）.

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isforward-biasedwhilethebase-collectorjunctionisreversed-biasedABJThasmeasureddccurrentvaluesof=0.1mAand=8.0mA.WhenIBisvariedby100μA,ICchangesby10mA.Whatisthevalueoftheβacforthisdevice?（

）.

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100WhenaBJTisoperatingintheactiveregion,thevoltagedropfromthebasetotheemitterisapproximatelyequaltothe（

）。

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diodedrop(about0.7V)

BJTsarecommonlyusedas（

）.

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theprimarycomponentsinamplifiersTheconditionwhereincreaseinbiascurrentwillnotcausefurtherincreasesincollectorcurrentiscalled（

）.

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saturation第四章測試WhenaBJTisbiasedinthecutoffregionthecollector-to-emittervoltageistypicallyequalto（

）.

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thecollectorsupplyvoltage

Calculatethecollector-emittervoltageforthisemitter-stabilizedcircuit.（

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4.32VThedifferencebetweentheresultingequationsforanetworkinwhichannpntransistorhasbeenreplacedbyapnptransistoris（

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thesignassociateswiththeparticularquantitiesThetermquiescentmeans（

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inactiveVoltage-dividerbiasstabilityis（

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independentofbeta第五章測試Giventhisconfiguration,determinetheinputimpedanceifVS=40mV,Rsense=0.5kΩ,andtheinputcurrentis20μA.（

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1,500ΩThetransistormodelreplacesthe（

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withthejunctiondiode’sacresistance.

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emitter—basejunction

Calculatethevoltagegainforthiscircuit.

（

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-137.25Atransistoramplifierhasaninputsignalappliedtoitsemitterterminalandanoutputsignaltakenfromitscollectorterminal.Theamplifierisa(n)（

）.

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common-baseamplifierThevoltagegainofaverywell-designedcommoncollectoramplifierconfiguration,usingapnptransistor,is（

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intherange0.95to0.99第六章測試Shockley’sequationdefinesthe（

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oftheFETandareunaffectedbythenetworkinwhichthedeviceisemployed.

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transfercharacteristicsForann-channeldepletionMOSFET,=8mAand=-6V.If=0.8V,whatisthevalueofthedraincurrent,?

（

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10.28mATheregionoftheJFETdraincurvethatliesbetweenpinch-offandbreakdowniscalled（

）.

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thesaturationregionInthefamilyofFETs,youcanexpecttofind

（

）.

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a

p-channeltype;unipolarstructure;an

n-channeltypeFETsusually（

）.

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haveahigherinputimpudencethanBJTs;aresmallerinconstructionthanBJTs;arelesssensitivetotemperaturechangethanBJTs第七章測試Thisgraphicalsolutionrepresents（

）.

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selfbiasforan

n-channelJFETGenerally,itisgooddesignpracticeforlinearamplifierstohaveoperatingpointsthatcloseto（

）.

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themidpointoftheloadlineWhichofthefollowingbiasingcircuitscanbeusedwithE-MOSFETs?

（

）

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drain-feedbackbiasTheprimarydifferencebetweenJFETsanddepletion-typeMOSFETsis（

）.

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depletion-typeMOSFETscanhavepositivevaluesof

andlevelsof

thatexceedAJFETcanbebiasedinseveraldifferentways.Thecommonmethod(s)ofbiasingann-channelJFETis(are)（

）.

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voltage-dividerbiasconfiguration;self-biasconfiguration;fixed-biasconfiguration第八章測試TheFETversionoftheBJT’scommon-emitterconfigurationisthe（

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circuit.

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common-sourceCalculatetheinputimpedanceforthisFETamplifier.

（

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****Designthiscircuitforavoltagegainof10.Youhavetocalculatethevalueofresistorand.Itisdesiredthatthetransistoroperatewitharelativelyhighvalueof.Forthisdevice,ahighvalueofisdefinedas.（

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****The（

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amplifierhashighinputimpedance,lowoutputimpedance,andlowvoltagegain.

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common-drainThe（

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FETamplifierhaslowinputimpedance,highoutputimpedance,andhighvoltagegain.

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common-gate第九章測試Calculatethelowfrequencybreakpointduetothecapacitor

forthisBJTamplifier.（

）

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****Ifseveralidenticalstagesofamplifiers,eachhavingtheexactsameupperandlowercutofffrequencies,areconnectedincascade,thenthebandwidthoftheresultingamplifierwill（

）.

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decreaseA3-dBdropinβoccursat（

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****NegativedBvaluesrepresent（

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powerlossesAnamplifierhasamidbandpowergainof24,500.WhatisthevalueofthepowergainindBforthecircuit?（

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43.9dB第十章測試Underdifference-modeoperation,thedifference-modevoltagegainforthiscircuitis（

）.

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40Theoperationalamplifierwillonlyslightlyamplifysignals（

）.

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thatarecommononboththeinputsTheinvertingandnoninvertinginputstoanop-ampareusedtodrivea(n)（

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amplifier.

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differentialWhenagivenop-amphasacommon-modeinputof10V,theoutputofthedeviceis10V.

Whenthedevicehasadifferentialinputof2mV,theoutputofthedeviceis10V.WhatistheCMPRofthedevice?（

）

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5000:1Thebandwidthofanamplifieris（

）.

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therangeoffrequenciesfoundusing

;therangeoffrequenciesbetweenthelowerandupper3dBfrequencies;therangeoffrequenciesoverwhichgainremainsrelativelyconstant

第十一章測試

Iftheinputvoltageis0.25Vandtheoutputis-2.5V,thevalueof

mustbe（

）.

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20.0kΩTheoutputvoltage,VO,isgivenby（

）.

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****Asummingintegratorisanop-ampintegratorthathas（

）.

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multipleinputresistorsandfeedbackcapacitorsAsecondorderlow-passfilterhasahigh-endroll-offof（

）.

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40dB/decadeAnactivefilterthatprovidesaconstantoutputforinputsignalsaboveiscalledanideal（

）.

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high-passfilter第十二章測試AclassBamplifier(notpush-pull)（

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conductsthrough180°oftheinputwaveformCrossoverdistortioninclassBamplifiersispreventedby（

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biasingthetransistorsslightlyabovecutoffThemaximumtheoreticalefficiencyofanRC-coupledclassAamplifieris（

）.

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25%Poweramplifiersaretypicallyusedtodrivelowimpedanceloads.（

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對Thepowerthatanamplifierdeliverstoaloadisequaltothedifferencebetweenthepowerthatthecircuitdrawsfromthepowersupplyandthepower