常用半導(dǎo)體中英文對(duì)照表離子注入機(jī)ionimplanterLSS理論LindhandScharffandSchiotttheory，又稱“林漢德-斯卡夫-斯高特理論”。溝道效應(yīng)channelingeffect射程分布rangedistribution深度分布depthdistribution投影射程projectedrange阻止距離stoppingdistance阻止本領(lǐng)stoppingpower標(biāo)準(zhǔn)阻止截面standardstoppingcrosssection退火annealing激活能activationenergy等溫退火isothermalannealing激光退火laserannealing應(yīng)力感生缺陷stress-induceddefect擇優(yōu)取向preferredorientation制版工藝mask-makingtechnology圖形畸變patterndistortion初縮firstminification精縮finalminification母版mastermask鉻版chromiumplate干版dryplate乳膠版emulsionplate透明版see-throughplate高分辨率版highresolutionplate,HRP超微粒干版platefor

ultra-microminiaturization掩模mask掩模對(duì)準(zhǔn)maskalignment對(duì)準(zhǔn)精度alignmentprecision光刻膠photoresist，又稱“光致抗蝕劑”。負(fù)性光刻膠negativephotoresist正性光刻膠positivephotoresist無機(jī)光刻膠inorganicresist多層光刻膠multilevelresist電子束光刻膠electronbeamresistX射線光刻膠X-rayresist刷洗scrubbing甩膠spinning涂膠photoresistcoating后烘postbaking光刻photolithographyX射線光刻X-raylithography電子束光刻electronbeamlithography離子束光刻ionbeamlithography深紫外光刻deep-UVlithography光刻機(jī)maskaligner投影光刻機(jī)projectionmaskaligner曝光exposure接觸式曝光法contactexposuremethod接近式曝光法proximityexposuremethod光學(xué)投影曝光法opticalprojectionexposuremethod電子束曝光系統(tǒng)electronbeamexposuresystem分步重復(fù)系統(tǒng)step-and-repeatsystem顯影development線寬linewidth去膠strippingofphotoresist氧化去膠removingofphotoresistbyoxidation等離子［體］去膠removingofphotoresistbyplasma刻蝕etching干法刻蝕dryetching反應(yīng)離子刻蝕reactiveionetching,RIE各向同性刻蝕isotropicetching各向異性刻蝕anisotropicetching反應(yīng)濺射刻蝕reactivesputteretching離子銑ionbeammilling，又稱“離子磨削”。等離子［體］刻蝕plasmaetching鉆蝕undercutting剝離技術(shù)lift-offtechnology，又稱“浮脫工藝”。終點(diǎn)監(jiān)測(cè)endpointmonitoring金屬化metallization互連interconnection多層金屬化multilevelmetallization電遷徙electromigration回流reflow磷硅玻璃phosphorosilicateglass硼磷硅玻璃boron-phosphorosilicateglass鈍化工藝passivationtechnology多層介質(zhì)鈍化multilayerdielectricpassivation劃片scribing電子束切片electronbeamslicing燒結(jié)sintering印壓indentation熱壓焊thermocompressionbonding熱超聲焊thermosonicbonding冷焊coldwelding點(diǎn)焊spotwelding球焊ballbonding楔焊wedgebonding內(nèi)引線焊接innerleadbonding外引線焊接outerleadbonding梁式引線beamlead裝架工藝mountingtechnology附著adhesion封裝packaging金屬封裝metallicpackaging陶瓷封裝ceramicpackaging扁平封裝flatpackaging塑封plasticpackage玻璃封裝glasspackaging微封裝micropackaging，又稱“微組裝”。管殼package管芯die引線鍵合leadbonding引線框式鍵合leadframebonding帶式自動(dòng)鍵合tapeautomatedbonding,TAB激光鍵合laserbonding超聲鍵合ultrasonicbonding紅外鍵合infraredbondingEDA365電子論壇微電子辭典大集合（按首字母順序排序）AAbruptjunction突變結(jié)Acceleratedtesting加速實(shí)驗(yàn)Acceptor受主Acceptoratom受主原子Accumulation積累、堆積Accumulatingcontact積累接觸Accumulationregion積累區(qū)Accumulationlayer積累層Activeregion有源區(qū)Activecomponent有源元Activedevice有源器件Activation激活A(yù)ctivationenergy激活能Activeregion有源（放大）區(qū)Admittance導(dǎo)納Allowedband允帶Alloy-junctiondevice合金結(jié)器件Aluminum(Aluminium)鋁Aluminum–oxide鋁氧化物Aluminumpassivation鋁鈍化Ambipolar雙極的Ambienttemperature環(huán)境溫度Amorphous無定形的，非晶體的Amplifier功放擴(kuò)音器放大器Analogue(Analog)comparator模擬比較器Angstrom埃Anneal退火Anisotropic各向異性的Anode陽極Arsenic(AS)砷Auger俄歇Augerprocess俄歇過程Avalanche雪崩Avalanchebreakdown雪崩擊穿Avalancheexcitation雪崩激發(fā)BBackgroundcarrier本底載流子Backgrounddoping本底摻雜Backward反向Backwardbias反向偏置Ballastingresistor整流電阻Ballbond球形鍵合Band能帶Bandgap能帶間隙Barrier勢(shì)壘Barrierlayer勢(shì)壘層Barrierwidth勢(shì)壘寬度Base基極Basecontact基區(qū)接觸Basestretching基區(qū)擴(kuò)展效應(yīng)Basetransittime基區(qū)渡越時(shí)間Basetransportefficiency基區(qū)輸運(yùn)系數(shù)Base-widthmodulation基區(qū)寬度調(diào)制Basisvector基矢Bias偏置Bilateralswitch雙向開關(guān)Binarycode二進(jìn)制代碼Binarycompoundsemiconductor二元化合物半導(dǎo)體Bipolar雙極性的BipolarJunctionTransistor(BJT)雙極晶體管Bloch布洛赫Blockingband阻擋能帶Blockingcontact阻擋接觸Body-centered體心立方Body-centredcubicstructure體立心結(jié)構(gòu)Boltzmann波爾茲曼Bond鍵、鍵合Bondingelectron價(jià)電子Bondingpad鍵合點(diǎn)Bootstrapcircuit自舉電路Bootstrappedemitterfollower自舉射極跟隨器Boron硼B(yǎng)orosilicateglass硼硅玻璃Boundarycondition邊界條件Boundelectron束縛電子Breadboard模擬板、實(shí)驗(yàn)板Breakdown擊穿Breakover轉(zhuǎn)折Brillouin布里淵Brillouinzone布里淵區(qū)Built-in內(nèi)建的Build-inelectricfield內(nèi)建電場(chǎng)Bulk體/體內(nèi)Bulkabsorption體吸收Bulkgeneration體產(chǎn)生Bulkrecombination體復(fù)合Burn-in老化Burnout燒毀Buriedchannel埋溝Burieddiffusionregion隱埋擴(kuò)散區(qū)CCan外殼Capacitance電容Capturecrosssection俘獲截面Capturecarrier俘獲載流子Carrier載流子、載波Carrybit進(jìn)位位Carry-inbit進(jìn)位輸入Carry-outbit進(jìn)位輸出Cascade級(jí)聯(lián)Case管殼Cathode陰極Center中心Ceramic陶瓷（的）Channel溝道Channelbreakdown溝道擊穿Channelcurrent溝道電流Channeldoping溝道摻雜Channelshortening溝道縮短Channelwidth溝道寬度Characteristicimpedance特征阻抗Charge電荷、充電Charge-compensationeffects電荷補(bǔ)償效應(yīng)Chargeconservation電荷守恒Chargeneutralitycondition電中性條件Charge

drive/exchange/sharing/transfer/storage電荷驅(qū)動(dòng)/交換/共享/轉(zhuǎn)移/存儲(chǔ)Chemmicaletching化學(xué)腐蝕法Chemically-Polish化學(xué)拋光Chemmically-MechanicallyPolish(CMP)化學(xué)機(jī)械拋光Chip芯片Chipyield芯片成品率Clamped箝位Clampingdiode箝位二極管Cleavageplane解理面Clockrate時(shí)鐘頻率Clockgenerator時(shí)鐘發(fā)生器Clockflip-flop時(shí)鐘觸發(fā)器Close-packedstructure密堆積結(jié)構(gòu)Close-loopgain閉環(huán)增益Collector集電極Collision碰撞CompensatedOP-AMP補(bǔ)償運(yùn)放

Common-base/collector/emitterconnection共基極/集電極/發(fā)射極連接Common-gate/drain/sourceconnection共柵/漏/源連接Common-modegain共模增益Common-modeinput共模輸入Common-moderejectionratio(CMRR)共模抑制比Compatibility兼容性Compensation補(bǔ)償Compensatedimpurities補(bǔ)償雜質(zhì)Compensatedsemiconductor補(bǔ)償半導(dǎo)體ComplementaryDarlingtoncircuit互補(bǔ)達(dá)林頓電路ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互補(bǔ)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Complementaryerrorfunction余誤差函數(shù)Computer-aideddesign(CAD)/test(CAT)/manufacture(CAM)計(jì)算機(jī)輔助設(shè)計(jì)/測(cè)試/制造CompoundSemiconductor化合物半導(dǎo)體Conductance電導(dǎo)Conductionband(edge)導(dǎo)帶(底)Conductionlevel/state導(dǎo)帶態(tài)Conductor導(dǎo)體Conductivity電導(dǎo)率Configuration組態(tài)Conlomb庫侖ConpledConfigurationDevices結(jié)構(gòu)組態(tài)Constants物理常數(shù)Constantenergysurface等能面Constant-sourcediffusion恒定源擴(kuò)散Contact接觸Contamination治污Continuityequation連續(xù)性方程Contacthole接觸孔Contactpotential接觸電勢(shì)Continuitycondition連續(xù)性條件Contradoping反摻雜Controlled受控的Converter轉(zhuǎn)換器Conveyer傳輸器Copperinterconnectionsystem銅互連系統(tǒng)Couping耦合Covalent共階的Crossover跨交Critical臨界的Crossunder穿交Crucible坩堝Crystal

defect/face/orientation/lattice晶體缺陷/晶面/晶向/晶格Currentdensity電流密度Curvature曲率Cutoff截止Currentdrift/dirve/sharing電流漂移/驅(qū)動(dòng)/共享CurrentSense電流取樣Curvature彎曲Customintegratedcircuit定制集成電路Cylindrical柱面的Czochralshicrystal直立單晶Czochralskitechnique切克勞斯基技術(shù)（Cz法直拉晶體J）DDanglingbonds懸掛鍵Darkcurrent暗電流Deadtime空載時(shí)間Debyelength德拜長度De.broglie德布洛意Decderate減速Decibel(dB)分貝Decode譯碼Deepacceptorlevel深受主能級(jí)Deepdonorlevel深施主能級(jí)Deepimpuritylevel深度雜質(zhì)能級(jí)Deeptrap深陷阱Defeat缺陷Degeneratesemiconductor簡并半導(dǎo)體Degeneracy簡并度Degradation退化DegreeCelsius(centigrade)/Kelvin攝氏/開氏溫度Delay延遲Density密度Densityofstates態(tài)密度Depletion耗盡Depletionapproximation耗盡近似Depletioncontact耗盡接觸Depletiondepth耗盡深度Depletioneffect耗盡效應(yīng)Depletionlayer耗盡層DepletionMOS耗盡MOSDepletionregion耗盡區(qū)Depositedfilm淀積薄膜Depositionprocess淀積工藝Designrules設(shè)計(jì)規(guī)則Die芯片（復(fù)數(shù)dice）Diode二極管Dielectric介電的Dielectricisolation介質(zhì)隔離Difference-modeinput差模輸入Differentialamplifier差分放大器Differentialcapacitance微分電容Diffusedjunction擴(kuò)散結(jié)Diffusion擴(kuò)散Diffusioncoefficient擴(kuò)散系數(shù)Diffusionconstant擴(kuò)散常數(shù)Diffusivity擴(kuò)散率Diffusion

capacitance/barrier/current/furnace擴(kuò)散電容/勢(shì)壘/電流/爐Digitalcircuit數(shù)字電路Dipoledomain偶極疇Dipolelayer偶極層Direct-coupling直接耦合Direct-gapsemiconductor直接帶隙半導(dǎo)體Directtransition直接躍遷Discharge放電Discretecomponent分立元件Dissipation耗散Distribution分布Distributedcapacitance分布電容Distributedmodel分布模型Displacement位移Dislocation位錯(cuò)Domain疇Donor施主Donorexhaustion施主耗盡Dopant摻雜劑Dopedsemiconductor摻雜半導(dǎo)體Dopingconcentration摻雜濃度Double-diffusiveMOS(DMOS)雙擴(kuò)散MOS.Drift漂移Driftfield漂移電場(chǎng)Driftmobility遷移率Dryetching干法腐蝕Dry/wetoxidation干/濕法氧化Dose劑量Dutycycle工作周期Dual-in-linepackage（DIP）雙列直插式封裝Dynamics動(dòng)態(tài)Dynamiccharacteristics動(dòng)態(tài)屬性Dynamicimpedance動(dòng)態(tài)阻抗EEarlyeffect厄利效應(yīng)Earlyfailure早期失效Effectivemass有效質(zhì)量Einsteinrelation(ship)愛因斯坦關(guān)系ElectricEraseProgrammableReadOnlyMemory(E2PROM)一次性電可擦除只讀存儲(chǔ)器Electrode電極Electrominggratim電遷移Electronaffinity電子親和勢(shì)Electronic-grade電子能Electron-beamphoto-resistexposure光致抗蝕劑的電子束曝光Electrongas電子氣Electron-gradewater電子級(jí)純水Electrontrappingcenter電子俘獲中心ElectronVolt(eV)電子伏Electrostatic靜電的Element元素/元件/配件Elementalsemiconductor元素半導(dǎo)體Ellipse橢圓Ellipsoid橢球Emitter發(fā)射極Emitter-coupledlogic發(fā)射極耦合邏輯Emitter-coupledpair發(fā)射極耦合對(duì)Emitterfollower射隨器Emptyband空帶Emittercrowdingeffect發(fā)射極集邊（擁擠）效應(yīng)Endurancetest=lifetest壽命測(cè)試Energystate能態(tài)Energymomentumdiagram能量-動(dòng)量(E-K)圖Enhancementmode增強(qiáng)型模式EnhancementMOS增強(qiáng)性MOSEntefic(低)共溶的Environmentaltest環(huán)境測(cè)試Epitaxial外延的Epitaxiallayer外延層Epitaxialslice外延片Expitaxy外延Equivalentcurcuit等效電路Equilibriummajority/minoritycarriers平衡多數(shù)/少數(shù)載流子ErasableProgrammableROM(EPROM)可搽?。ň幊蹋┐鎯?chǔ)器Errorfunctioncomplement余誤差函數(shù)Etch刻蝕Etchant刻蝕劑Etchingmask抗蝕劑掩模Excesscarrier過剩載流子Excitationenergy激發(fā)能Excitedstate激發(fā)態(tài)Exciton激子Extrapolation外推法Extrinsic非本征的Extrinsicsemiconductor雜質(zhì)半導(dǎo)體FFace-centered面心立方Falltime下降時(shí)間Fan-in扇入Fan-out扇出Fastrecovery快恢復(fù)Fastsurfacestates快界面態(tài)Feedback反饋Fermilevel費(fèi)米能級(jí)Fermi-DiracDistribution費(fèi)米-狄拉克分布Femipotential費(fèi)米勢(shì)Fickequation菲克方程（擴(kuò)散）Fieldeffecttransistor場(chǎng)效應(yīng)晶體管Fieldoxide場(chǎng)氧化層Filledband滿帶Film薄膜Flashmemory閃爍存儲(chǔ)器Flatband平帶Flatpack扁平封裝Flickernoise閃爍（變）噪聲Flip-floptoggle觸發(fā)器翻轉(zhuǎn)Floatinggate浮柵Fluorideetch氟化氫刻蝕Forbiddenband禁帶Forwardbias正向偏置Forwardblocking/conducting正向阻斷/導(dǎo)通Frequencydeviationnoise頻率漂移噪聲Frequencyresponse頻率響應(yīng)Function函數(shù)GGain增益Gallium-Arsenide(GaAs)砷化鉀Gamyrayr射線Gate門、柵、控制極Gateoxide柵氧化層Gauss（ian）高斯Gaussiandistributionprofile高斯摻雜分布Generation-recombination產(chǎn)生-復(fù)合Geometries幾何尺寸Germanium(Ge)鍺Graded緩變的Graded(gradual)channel緩變溝道Gradedjunction緩變結(jié)Grain晶粒Gradient梯度Grownjunction生長結(jié)Guardring保護(hù)環(huán)Gummel-Poommodel葛謀-潘模型Gunn-effect狄氏效應(yīng)HHardeneddevice輻射加固器件Heatofformation形成熱Heatsink散熱器、熱沉Heavy/lightholeband重/輕空穴帶Heavysaturation重?fù)诫sHell-effect霍爾效應(yīng)Heterojunction異質(zhì)結(jié)Heterojunctionstructure異質(zhì)結(jié)結(jié)構(gòu)HeterojunctionBipolarTransistor（HBT）異質(zhì)結(jié)雙極型晶體Highfieldproperty高場(chǎng)特性High-performanceMOS.(H-MOS)高性能MOS.Hormalized歸一化Horizontalepitaxialreactor臥式外延反應(yīng)器Hotcarrior熱載流子Hybridintegration混合集成IImage-force鏡象力Impactionization碰撞電離Impedance阻抗Imperfectstructure不完整結(jié)構(gòu)Implantationdose注入劑量Implantedion注入離子Impurity雜質(zhì)Impurityscattering雜志散射Incrementalresistance電阻增量（微分電阻）In-contactmask接觸式掩模Indiumtinoxide(ITO)銦錫氧化物Inducedchannel感應(yīng)溝道Infrared紅外的Injection注入Inputoffsetvoltage輸入失調(diào)電壓Insulator絕緣體InsulatedGateFET(IGFET)絕緣柵FETIntegratedinjectionlogic集成注入邏輯Integration集成、積分Interconnection互連Interconnectiontimedelay互連延時(shí)Interdigitatedstructure交互式結(jié)構(gòu)Interface界面Interference干涉Internationalsystemofunions國際單位制Internallyscattering谷間散射Interpolation內(nèi)插法Intrinsic本征的Intrinsicsemiconductor本征半導(dǎo)體Inverseoperation反向工作Inversion反型Inverter倒相器Ion離子Ionbeam離子束Ionetching離子刻蝕Ionimplantation離子注入Ionization電離Ionizationenergy電離能Irradiation輻照Isolationland隔離島Isotropic各向同性JJunctionFET(JFET)結(jié)型場(chǎng)效應(yīng)管Junctionisolation結(jié)隔離Junctionspacing結(jié)間距Junctionside-wall結(jié)側(cè)壁LLatchup閉鎖Lateral橫向的Lattice晶格Layout版圖Lattice

binding/cell/constant/defect/distortion晶格結(jié)合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸變Leakagecurrent（泄）漏電流Levelshifting電平移動(dòng)Lifetime壽命linearity線性度Linkedbond共價(jià)鍵LiquidNitrogen液氮Liquid－phaseepitaxialgrowthtechnique液相外延生長技術(shù)Lithography光刻LightEmittingDiode(LED)發(fā)光二極管LoadlineorVariable負(fù)載線LocatingandWiring布局布線Longitudinal縱向的Logicswing邏輯擺幅Lorentz洛淪茲Lumpedmodel集總模型MMajoritycarrier多數(shù)載流子Mask掩膜板，光刻板Masklevel掩模序號(hào)Maskset掩模組Mass-actionlaw質(zhì)量守恒定律Master-slaveDflip-flop主從D觸發(fā)器Matching匹配Maxwell麥克斯韋Meanfreepath平均自由程Meanderedemitterjunction梳狀發(fā)射極結(jié)Meantimebeforefailure(MTBF)平均工作時(shí)間Megeto-resistance磁阻Mesa臺(tái)面MESFET-MetalSemiconductor金屬半導(dǎo)體FETMetallization金屬化Microelectronictechnique微電子技術(shù)Microelectronics微電子學(xué)Millenindices密勒指數(shù)Minoritycarrier少數(shù)載流子Misfit失配Mismatching失配Mobileions可動(dòng)離子Mobility遷移率Module模塊Modulate調(diào)制Molecularcrystal分子晶體MonolithicIC單片ICMOSFET金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Mos.Transistor(MOST)MOS.晶體管Multiplication倍增Modulator調(diào)制Multi-chipIC多芯片ICMulti-chipmodule(MCM)多芯片模塊Multiplicationcoefficient倍增因子NNakedchip未封裝的芯片（裸片）Negativefeedback負(fù)反饋Negativeresistance負(fù)阻Nesting套刻

Negative-temperature-coefficient負(fù)溫度系數(shù)Noisemargin噪聲容限Nonequilibrium非平衡Nonrolatile非揮發(fā)（易失）性Normallyoff/on常閉/開Numericalanalysis數(shù)值分析OOccupiedband滿帶Officienay功率Offset偏移、失調(diào)Onstandby待命狀態(tài)Ohmiccontact歐姆接觸Opencircuit開路Operatingpoint工作點(diǎn)Operatingbias工作偏置Operationalamplifier(OPAMP)運(yùn)算放大器Opticalphoton=photon光子Opticalquenching光猝滅Opticaltransition光躍遷Optical-coupledisolator光耦合隔離器Organicsemiconductor有機(jī)半導(dǎo)體Orientation晶向、定向Outline外形Out-of-contactmask非接觸式掩模Outputcharacteristic輸出特性O(shè)utputvoltageswing輸出電壓擺幅Overcompensation過補(bǔ)償Over-currentprotection過流保護(hù)Overshoot過沖Over-voltageprotection過壓保護(hù)Overlap交迭Overload過載Oscillator振蕩器Oxide氧化物Oxidation氧化Oxidepassivation氧化層鈍化PPackage封裝Pad壓焊點(diǎn)Parameter參數(shù)Parasiticeffect寄生效應(yīng)Parasiticoscillation寄生振蕩Passination鈍化Passivecomponent無源元件Passivedevice無源器件Passivesurface鈍化界面Parasitictransistor寄生晶體管Peak-pointvoltage峰點(diǎn)電壓Peakvoltage峰值電壓Permanent-storagecircuit永久存儲(chǔ)電路Period周期Periodictable周期表Permeable-base可滲透基區(qū)Phase-lockloop鎖相環(huán)Phasedrift相移Phononspectra聲子譜Photoconduction光電導(dǎo)Photodiode光電二極管Photoelectriccell光電池Photoelectriceffect光電效應(yīng)Photoenicdevices光子器件Photolithographicprocess光刻工藝(photo)resist（光敏）抗腐蝕劑Pin管腳Pinchoff夾斷PinningofFermilevel費(fèi)米能級(jí)的釘扎（效應(yīng)）Planarprocess平面工藝Planartransistor平面晶體管Plasma等離子體Plezoelectriceffect壓電效應(yīng)Poissonequation泊松方程Pointcontact點(diǎn)接觸Polarity極性Polycrystal多晶Polymersemiconductor聚合物半導(dǎo)體Poly-silicon多晶硅Potential(電)勢(shì)Potentialbarrier勢(shì)壘Potentialwell勢(shì)阱Powerdissipation功耗Powertransistor功率晶體管Preamplifier前置放大器Primaryflat主平面Principalaxes主軸Print-circuitboard(PCB)印制電路板Probability幾率Probe探針Process工藝Propagationdelay傳輸延時(shí)Pseudopotentialmethod膺勢(shì)發(fā)Punchthrough穿通Pulsetriggering/modulating脈沖觸發(fā)/調(diào)制PulseWidenModulator(PWM)脈沖寬度調(diào)制Punchthrough穿通Push-pullstage推挽級(jí)QQualityfactor品質(zhì)因子Quantization量子化Quantum量子Quantumefficiency量子效應(yīng)Quantummechanics量子力學(xué)Quasi–Fermi－level準(zhǔn)費(fèi)米能級(jí)Quartz石英RRadiationconductivity輻射電導(dǎo)率Radiationdamage輻射損傷Radiationfluxdensity輻射通量密度Radiationhardening輻射加固Radiationprotection輻射保護(hù)Radiative-recombination輻照復(fù)合Radioactive放射性Reachthrough穿通Reactivesputteringsource反應(yīng)濺射源Readdiode里德二極管Recombination復(fù)合Recoverydiode恢復(fù)二極管Reciprocallattice倒核子Recoverytime恢復(fù)時(shí)間Rectifier整流器（管）Rectifyingcontact整流接觸Reference基準(zhǔn)點(diǎn)基準(zhǔn)參考點(diǎn)Refractiveindex折射率Register寄存器Registration對(duì)準(zhǔn)Regulate控制調(diào)整Relaxationlifetime馳豫時(shí)間Reliability可靠性Resonance諧振Resistance電阻Resistor電阻器Resistivity電阻率Regulator穩(wěn)壓管（器）Relaxation馳豫Resonantfrequency共射頻率Responsetime響應(yīng)時(shí)間Reverse反向的Reversebias反向偏置SSamplingcircuit取樣電路Sapphire藍(lán)寶石（Al2O3）Satellitevalley衛(wèi)星谷Saturatedcurrentrange電流飽和區(qū)Saturationregion飽和區(qū)Saturation飽和的Scaleddown按比例縮小Scattering散射Schockleydiode肖克萊二極管Schottky肖特基Schottkybarrier肖特基勢(shì)壘Schottkycontact肖特基接觸Schrodingen薛定厄Scribinggrid劃片格Secondaryflat次平面Seedcrystal籽晶Segregation分凝Selectivity選擇性Selfaligned自對(duì)準(zhǔn)的Selfdiffusion自擴(kuò)散Semiconductor半導(dǎo)體Semiconductor-controlledrectifier可控硅Sendsitivity靈敏度Serial串行/串聯(lián)Seriesinductance串聯(lián)電感Settletime建立時(shí)間Sheetresistance薄層電阻Shield屏蔽Shortcircuit短路Shotnoise散粒噪聲Shunt分流Sidewallcapacitance邊墻電容Signal信號(hào)Silicaglass石英玻璃Silicon硅Siliconcarbide碳化硅Silicondioxide(SiO2)二氧化硅SiliconNitride(Si3N4)氮化硅SiliconOnInsulator絕緣硅Siliverwhiskers銀須Simplecubic簡立方Singlecrystal單晶Sink沉Skineffect趨膚效應(yīng)Snaptime急變時(shí)間Sneakpath潛行通路Sulethreshold亞閾的Solarbattery/cell太陽能電池Solidcircuit固體電路Solid