ICS31.200

CCSL56

中華人民共和國國家標準

GB/T44924—2024

半導體集成電路

射頻發(fā)射器/接收器測試方法

Semiconductorintegratedcircuits—

MeasuringmethodsforRFtransmitter/receiver

2024?12?31發(fā)布2025?04?01實施

國家市場監(jiān)督管理總局

國家標準化管理委員會發(fā)布

GB/T44924—2024

目次

前言··························································································································Ⅲ

1范圍·······················································································································1

2規(guī)范性引用文件········································································································1

3術語和定義··············································································································1

4一般要求·················································································································4

4.1總則·················································································································4

4.2環(huán)境要求···········································································································4

4.3測試條件···········································································································4

4.4測試系統(tǒng)及儀器設備····························································································4

4.5測試注意事項·····································································································5

5詳細要求·················································································································5

5.1mW5

動態(tài)功耗P（a）································································································

5.2dB6

功率增益G（P）·································································································

5.3ΔdB10

功率增益平坦度G（P）····················································································

5.4dB11

線性功率增益GPLIN（）·······················································································

5.5ΔdB11

線性功率增益平坦度GPLIN（）···········································································

5.6dBm12

輸出功率P（o）·····························································································

5.7dBm13

抗燒毀功率PKSH（）························································································

5.8效率η（%）········································································································14

5.9功率增益可調(diào)范圍GR（dB）··················································································15

5.10dBc16

鏡像抑制比RIMJ（）························································································

5.11dBc17

諧波抑制比RHR（）························································································

5.12dBc18

本振抑制比RLO（）························································································

5.13dBc19

邊帶抑制比RSB（）·························································································

5.14dB20

雜散抑制比RFS（）··························································································

5.15PNdBdBm21

_壓縮點CP?N（）··················································································

5.16輸出二階互調(diào)截止點OIP2（dBm）·········································································23

5.17輸入二階互調(diào)截止點IIP2（dBm）··········································································26

5.18輸出三階互調(diào)截止點OIP3（dBm）·········································································26

5.19輸入三階互調(diào)截止點IIP3（dBm）··········································································28

5.20ns29

通道建立時間tON（）·························································································

5.21ns30

通道關斷時間tOFF（）························································································

5.2231

收發(fā)切換時間tTR······························································································

Ⅰ

GB/T44924—2024

5.23噪聲系數(shù)NF（dB）·····························································································34

5.24端口回波損耗RL（dB）/電壓駐波比VSWR·····························································37

5.25端口阻抗Z（Ω）·································································································40

5.26ns41

群時延tGD（）··································································································

5.27帶內(nèi)相位非線性PNL（°）·····················································································42

5.28dBm/Hz43

噪聲基底NFL（）·····················································································

5.29本振泄漏LOL（dBm）························································································44

5.30?dB45

幅度穩(wěn)定度AP（o）·······················································································

5.31相位穩(wěn)定度Δθ（°）·····························································································46

5.32°47

通道間相位一致性PSER（）··················································································

5.33dB50

通道間幅度一致性AMER（）··············································································

5.34I/Q°51

相位誤差PEIQ（）························································································

5.35I/QdB53

幅度誤差AEIQ（）·····················································································

5.36調(diào)制精度EVM（%）···························································································54

5.37鄰信道功率抑制比ACPR（dB）·············································································55

5.38dB56

通道隔離度KISO（）·························································································

5.39載波泄露CL（dB）·····························································································58

Ⅱ

GB/T44924—2024

前言

本文件按照GB/T1.1—2020《標準化工作導則第1部分：標準化文件的結構和起草規(guī)則》的規(guī)

定起草。

請注意本文件的某些內(nèi)容可能涉及專利。本文件的發(fā)布機構不承擔識別專利的責任。

本文件由中華人民共和國工業(yè)和信息化部提出。

本文件由全國集成電路標準化技術委員會（SAC/TC599）歸口。

本文件起草單位：中國電子科技集團公司第二十四研究所、重慶西南集成電路設計有限責任公司、

中國電子科技集團公司第十四研究所、中國電子科技集團公司第三十八研究所、成都振芯科技股份有

限公司、深圳市晶峰晶體科技有限公司。

本文件主要起草人：蘇良勇、王露、唐景磊、陽潤、戚園、劉丹、許娟、蘇巧、陳翔、劉曉政、范超、高青。

Ⅲ