ProductFolderOrderNowDocuments&SoftwareSupport&CommunityOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY201913特性說明?超低噪聲：OPA1656是一款Burr-Brown?運算放大器，專門設(shè)計–電壓噪聲：10kHz時為2.9nV/√Hz用于要求信號保真的音頻和工業(yè)應(yīng)用。FET輸入架構(gòu)–電流噪聲：1kHz時為6fA/√Hz可達(dá)到2.9nV/√Hz的低電壓噪聲密度和6fA/√Hz電流?低失真：噪聲密度，能夠在各種電路內(nèi)將噪聲降到極低。–1kHz時為0.000029%(–131dB)OPA1656采用高帶寬和高開環(huán)增益設(shè)計，在20kHz時的失真率低至0.000035%(–129dB)并且可提高全

–20kHz時為0.000035%(–129dB)音頻帶寬內(nèi)的音頻信號保真。該器件還具有出色的輸?高開環(huán)增益：150dB出電流驅(qū)動功能，在Ω負(fù)載下提供250mV電源電

?高輸出電流：100mA壓范圍內(nèi)的軌至軌輸出擺幅，并且可以提供100mA輸

?低輸入偏置電流：10pA出電流。?壓擺率：24V/μs?增益帶寬積：53MHzOPA1656可在±2.25V至±18V的極寬電源電壓范圍?軌至軌輸出內(nèi)工作，也可在僅為3.9mA的電源電流（4.5V至?寬電源電壓范圍：±2.25V至±18V或4.5V至36V?靜態(tài)電流：每通道3.9mA）下工作，從而可滿足許多類型的音頻產(chǎn)品的電源限制。它的額定工作溫度范圍為–40°C至+125°C。該器件采用8引腳SOIC封裝。2應(yīng)用器件信(1)?條形音箱器件型號封裝封裝尺寸（標(biāo)稱值）?唱盤OPA1656SOIC(8)4.90mm×3.91mm?DJ控制器、混頻器和其他DJ設(shè)備(1)如需了解所有可用封裝，請參閱數(shù)據(jù)表末尾的封裝選項附錄。?專業(yè)音頻混合器或控制平面?高保真數(shù)模轉(zhuǎn)換器?吉他效果踏板超低輸入電壓噪聲100?吉他放大器和其他樂器放大器?專業(yè)麥克風(fēng)和無線系統(tǒng)?耳麥和耳機(jī)?振動分析主動Baxandall音調(diào)控制10±+±+1101001k10k100k1M10MFrequency(Hz)C020本文檔旨在為方便起見，提供有關(guān)TI產(chǎn)品中文版本的信息，以確認(rèn)產(chǎn)品的概要。有關(guān)適用的官方英文版本的最新信息，請訪問，其內(nèi)容始終優(yōu)先。TI不保證翻譯的準(zhǔn)確性和有效性。在實際設(shè)計之前，請務(wù)必參考最新版本的英文版本。EnglishDataSheet:SBOS901OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019目錄1性18ApplicationandImplementation18

2應(yīng)用18.1ApplicationInformation18

3說明1特8.2TypicalApplications199PowerSupplyRecommendations25

4修訂歷史記錄210Layout25

5PinConfigurationandFunctions36Specifications46.1AbsoluteMaximumRatings46.2ESDRatings41110.1LayoutGuidelines2510.2LayoutExample26器件和文檔支持2711.1器件支持276.3RecommendedOperatingConditions411.2文檔支持276.4ThermalInformation411.3接收文檔更新通知286.5ElectricalCharacteristics511.4社區(qū)資源286.6TypicalCharacteristics77DetailedDescription147.1Overview147.2FunctionalBlockDiagram147.3FeatureDescription147.4DeviceFunctionalModes171211.5商標(biāo)2811.6靜電放電警告2811.7Glossary28機(jī)和可訂購信械、封裝息284修訂歷史記錄ChangesfromOriginal(March2019)toRevisionAPage?已更改將器件狀態(tài)從預(yù)告信息（預(yù)覽）更改為生產(chǎn)數(shù)據(jù)（正在供貨）12Copyright?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY20195PinConfigurationandFunctionsDPackage

8-PinSOIC

TopViewOUTA18V+±INA27OUTB+INA36±INBV±45+INBNottoscalePinFunctionsPINNAMENO.I/ODESCRIPTIONA2IInvertinginput,channelA+INA3INoninvertinginput,channelAB6IInvertinginput,channelB+INB5INoninvertinginput,channelBOUTA1OOutput,channelAOUTB7OOutput,channelB4—Negative(lowest)powersupplyV+8—Positive(highest)powersupplyCopyright?2019,TexasInstrumentsIncorporated3OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY20196Specifications6.1AbsoluteMaximumRatingsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)(1)MINMAXUNITVoltageSupplyvoltage,VS=(V+)–(V–)40VInput(V–)–0.5(V+)+0.5VCurrentInput(allpinsexceptpower-supplypins)10mAOutputshort-circuit(2)ContinuousOperating,TA125°CTemperatureJunction,TJ150°CStorage,Tstg150°C(1)StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings

only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunder

RecommendedOperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.

(2)Short-circuittoS/2(groundinsymmetricaldual-supplysetups),oneamplifierperpackage.6.2ESDRatingsVALUEUNIT(ESD)ElectrostaticdischargeHuman-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1)±2000Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2)±1000V(1)JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.

(2)JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.6.3RecommendedOperatingConditionsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)MINNOMMAXUNITSupplyvoltage4.5(±2.25)36(±18)VOperatingtemperature,A125°C6.4ThermalInformationOPA1656THERMALMETRIC(1)D(SOIC)UNIT8PINSJAJunction-to-ambientthermalresistance119.9°C/WJC(top)Junction-to-case(top)thermalresistance51.8°C/WJBJunction-to-boardthermalresistance65.4°C/WJTJunction-to-topcharacterizationparameter10.0°C/WJBJunction-to-boardcharacterizationparameter64.2°C/WJC(bot)Junction-to-case(bottom)thermalresistance–°C/W(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplicationreport.4Copyright?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY20196.5ElectricalCharacteristicsatTA=25°C,VS=±18V,RL=2kΩ,andVCM=OUT=S/2(unlessotherwisenoted)PARAMETERTESTCONDITIONSMINTYPMAXUNITAUDIOPERFORMANCEG=1,RL=600Ω,VO=3.5RMS,f=1kHz,80-kHzmeasurementbandwidth0.000029%dBTHD+NTotalharmonicdistortion+noiseG=1,R=600Ω,V=3.5V,f=20kHz,LORMS80-kHzmeasurementbandwidthG=1,RL=2Ω,VO=3.5RMS,f=1kHz,80-kHzmeasurementbandwidth0.0001%dB0.000029%dBG=1,RL=2Ω,VO=3.5RMS,f=20kHz,80-kHzmeasurementbandwidth0.000035%dBIMDIntermodulationdistortionG=1O=3.5RMSSMPTE/DINtwo-tone,4:1(60Hzand7kHz)CCIFtwin-tone(19kHzand20kHz)0.000018%dB0.000020%dBFREQUENCYRESPONSEGBWGain-bandwidthproductG=10053MHzUnitygainbandwidthG=120MHzSRSlewrateG=–1,10-Vstep24V/μsFullpowerbandwidth(1)O=1P3.8MHzOverloadrecoverytimeG=–10100nsChannelseparationf=1kHzdBSettlingtime0.01%,G=–1,10-Vstep800nsNOISEInputvoltagenoisef=20Hzto20kHz0.53RMSf=0.1Hzto10Hz1.9PPf=100Hz11.8nV/HznInputvoltagenoisedensityf=1kHz4.3f=10kHz2.9nV/HznInputcurrentnoisedensityf=1kHz6fA/√HzOFFSETVOLTAGEOSInputoffsetvoltageS=±2.25Vto±18V±0.5mVOS/dTInputoffsetvoltagedriftS=±2.25Vto±18VA=–40°Cto+125°C(2)0.32μV/°CPSRRPower-supplyrejectionratioS=±2.25Vto±18V0.35μV/VINPUTBIASCURRENTBInputbiascurrentCM=0V(3)±10±20pAOSInputoffsetcurrentCM=0V±10±20pAINPUTVOLTAGERANGECMCommon-modevoltagerange(V+)–2.25VCMRRCommon-moderejectionratio≤CM≤(V+)–2.25106120dBINPUTIMPEDANCEDifferential100||9.1Ω||pFCommon-mode6||1.912Ω||pFOPEN-LOOPGAINOLOpen-loopvoltagegain+1.3V≤O≤(V+)–1.3VL=600Ω+0.5V≤O≤(V+)–0.5VL=2Ω134150dB134154dB(1)Full-powerbandwidth=SR/π×VP),whereSR=slewrate.(2)Specifiedbydesignandcharacterization.(3)Inputbiascurrenttestconditionscanvaryfromnominalambientconditionsasaresultofjunctiontemperaturedifferences.Copyright?2019,TexasInstrumentsIncorporated5OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019ElectricalCharacteristics(continued)atTA=25°C,VS=±18V,RL=2kΩ,andVCM=OUT=S/2(unlessotherwisenoted)PARAMETERTESTCONDITIONSMINTYPMAXUNITOUTPUTOVoltageoutputL=2Ω+0.25(V+)–0.25VOOpen-loopoutputimpedancef=1MHz26ΩSCShort-circuitcurrent(4)±100mALCapacitiveloaddrive100pFPOWERSUPPLYQQuiescentcurrent(perchannel)O=0A,S=±2.25Vto±18V3.94.6mAO=0A,A=–40°Cto+125°C(2)5.0mA(4)Onechannelatatime.6版權(quán)?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY20196.6TypicalCharacteristicsatTA=25°C,VS=±15V,RL=2kΩ,andVCM=S/2(unlessotherwisenoted)1C020Time(1s/div)D029圖1.InputVoltageNoiseDensityvsFrequency圖2.0.1-Hzto10-HzNoisesrVsrVsrV5(:)D1200D113圖3.VoltageNoisevsSourceResistance圖4.MaximumOutputVoltagevsFrequency180180GainPhase1501501201206040G=

1G=1G=

10G=+10090902060603030000-30-30100m1101001k10k100k1M10MFrequency(Hz)D104L=10pF-201001k10k100k1M10MFrequency(Hz)L=10pFD106圖5.Open-LoopGainandPhasevsFrequency圖6.Closed-LoopGainvsFrequency版權(quán)?2019,TexasInstrumentsIncorporated7OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019TypicalCharacteristics()atTA=25°C,VS=±15V,RL=2kΩ,andVCM=S/2(unlessotherwisenoted)1G=:G=:G=:G=

:G=

:G=

:G=:G=:G=:G=

:G=

:G=

:1)OUT=3RMSBandwidth=80kHzf=1kHzBandwidth=80kHz圖7.THD+NRatiovsFrequency圖8.THD+NRatiovsOutputAmplitudeG=G=G=G=G=

G=

G=

G=

-100-120-140-160-1800.0050.0030.0020.0010.00070.00050.00030.00020.00017E-55E-5G=1,V=1V(0.354)G=1,V=5V(1.768)G=+1,V=1V(0.354)G=+1,V=5V(1.768)-100-120-200(Hz)3E-52E-5r5r10r18VS(V)OUT=3RMSBandwidth=80kHzf=1kHzL=2kΩBandwidth=80kHz圖9.IndividualHarmonicAmplitudevsFrequency圖10.THD+NvsSupplyVoltage-600-20-80-40-60-80-100-100-120-120-140-160-180-1401(V)-200201001k10k50kFrequency(Hz)Bandwidth=80kHzG=1,VOUT=3RMSL=2kΩBandwidth=80kHz圖11.IntermodulationDistortionvsAmplitude圖12.FFT,1-kHzSineWave8版權(quán)?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019TypicalCharacteristics()atTA=25°C,VS=±15V,RL=2kΩ,andVCM=S/2(unlessotherwisenoted)00-20-20-40-40-60-60-80-80-100-100-120-120-140-140-160-160-180-180-200-2001k10k80k020k40k60k80kFrequency(Hz)D143Frequency(Hz)D143G=1,VOUT=3RMSL=2kΩBandwidth=80kHzOUT=3RMSL=2kΩBandwidth=80kHz圖13.FFT,10-kHzSineWave圖14.FFT,CCIFInput(19kHz+20kHz)

01D114D107OUT=3RMSG=1圖15.ChannelSeparationvsFrequency圖16.CMRRandPSRRvsFrequency(ReferredtoInput)55(qD028(qD027圖17.PowerSupplyRejectionRatiovsTemperature(ReferredtoInput)圖18.CommonModeRejectionRatiovsTemperature(ReferredtoInput)版權(quán)?2019,TexasInstrumentsIncorporated9OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019TypicalCharacteristics()atTA=25°C,VS=±15V,RL=2kΩ,andVCM=S/2(unlessotherwisenoted)550012

PD001PqD004Count=7955Count=32圖19.InputOffsetVoltageDistribution圖20.InputOffsetVoltageDriftDistribution1qC00qCqCqC5-9-6-30369qD017D0195typicalunitsshown圖21.InputOffsetvsTemperature圖22.InputOffsetvsCommonModeVoltageINOUTINOUTPPD137D135G=1L=20pFG=–1L=100pF圖23.Small-SignalStepResponse(100mV)圖24.Small-SignalStepResponse(100mV)10版權(quán)?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019TypicalCharacteristics()atTA=25°C,VS=±15V,RL=2kΩ,andVCM=S/2(unlessotherwisenoted)INOUTINOUTPPD136G=1L=2kΩL=100pFG=–1L=100pFD139圖25.Large-SignalStepResponse圖26.Large-SignalStepResponse521IB+IB-IOS55qD033(qD024圖27.Open-LoopGainvsTemperature圖28.BandOSvsTemperature4B-IIS=VS=V00369D0235(qD031圖29.BandOSvsCommon-ModeVoltage圖30.SupplyCurrentvsTemperature版權(quán)?2019,TexasInstrumentsIncorporated11OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019TypicalCharacteristics()atTA=25°C,VS=±15V,RL=2kΩ,andVCM=S/2(unlessotherwisenoted)4qCqC3qC2qC0480D030D025圖31.SupplyCurrentvsSupplyVoltage圖32.OutputVoltagevsOutputCurrent(Sourcing)qCqCqCqC05D026(qD041圖33.OutputVoltagevsOutputCurrent(Sinking)圖34.Short-CircuitCurrentvsTemperatureISO=0:ISO=:ISO=:0LD105CLD037G=1G=1圖35.PhaseMarginvsCapacitiveLoad圖36.PercentOvershootvsCapacitiveLoad12版權(quán)?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019TypicalCharacteristics()atTA=25°C,VS=±15V,RL=2kΩ,andVCM=S/2(unlessotherwisenoted)ISO=0:ISO=:ISO=:0CLD131G=–1G=–10INOUTD134圖37.PercentOvershootvsCapacitiveLoad圖38.NegativeOverloadRecoveryINOUT1G=–10D1381D112圖39.PositiveOverloadRecovery圖40.Open-LoopOutputImpedancevsFrequencyINOUTD138G=1圖41.NoPhaseReversal版權(quán)?2019,TexasInstrumentsIncorporated13OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY20197DetailedDescription7.1OverviewTheOPA1656usesathree-gain-stagearchitecturetoachieveverylownoiseanddistortion.TheFunctional

BlockDiagramshowsasimplifiedschematicoftheOPA1656(onechannelshown).Thedeviceconsistsofalow

noiseinputstageandfeedforwardpathwaycoupledtoahigh-currentoutputstage.Thistopologyexhibits

superiordistortionperformanceunderawiderangeofloadingconditionscomparedtootheroperational

amplifiers.7.2FunctionalBlockDiagramFeed-

forward

PathCC+INInputStageGainStageOutputStageOUT-IN7.3FeatureDescription7.3.1PhaseReversalProtectionTheOPA1656hasinternalphase-reversalprotection.Manyopampsexhibitphasereversalwhentheinputis

drivenbeyondthelinearcommon-moderange.Thisconditionismostoftenencounteredinnoninvertingcircuits

whentheinputisdrivenbeyondthespecifiedcommon-modevoltagerange,causingtheoutputtoreverseinto

theoppositerail.TheinputoftheOPA1656preventsphasereversalwithexcessivecommon-modevoltage.

Instead,theappropriateraillimitstheoutputvoltage.Thisperformanceisshownin圖42.50-10-15-20Times/div)VINVOUT圖42.OutputWaveformDevoidofPhaseReversalDuringanInputOverdriveCondition7.3.2ElectricalOverstressDesignersoftenaskquestionsaboutthecapabilityofanoperationalamplifiertowithstandelectricaloverstress.

Thesequestionstendtofocusonthedeviceinputs,butcaninvolvethesupplyvoltagepinsoreventheoutput

pin.Eachofthesedifferentpinfunctionshaveelectricalstresslimitsdeterminedbythevoltagebreakdown

characteristicsoftheparticularsemiconductorfabricationprocessandspecificcircuitsconnectedtothepin.

Additionally,internalelectrostaticdischarge(ESD)protectionisbuiltintothesecircuitstoprotectthemfrom

accidentalESDeventsbothbeforeandduringproductassembly.14版權(quán)?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019FeatureDescription()AgoodunderstandingofthisbasicESDcircuitryandtherelevancetoanelectricaloverstresseventishelpful.圖

43illustratestheESDcircuitscontainedintheOPA1656(indicatedbythedashedlinearea).TheESD

protectioncircuitryinvolvesseveralcurrent-steeringdiodesconnectedfromtheinputandoutputpinsandrouted

backtotheinternalpower-supplylines,wherethediodesmeetatanabsorptiondeviceinternaltotheoperational

amplifier.Thisprotectioncircuitryisintendedtoremaininactiveduringnormalcircuitoperation.TVSRF+VSR1IN±20?RSIN+20?+Power-SupplyESDCellRL+VIN±±VSTVS圖43.EquivalentInternalESDCircuitryRelativetoaTypicalCircuitApplicationAnESDeventproducesashort-duration,high-voltagepulsethatistransformedintoashort-duration,high-

currentpulsewhendischargingthroughasemiconductordevice.TheESDprotectioncircuitsaredesignedto

provideacurrentpatharoundtheoperationalamplifiercoretopreventdamage.Theenergyabsorbedbythe

protectioncircuitryisthendissipatedasheat.WhenanESDvoltagedevelopsacrosstwoormoreamplifierdevicepins,currentflowsthroughoneormore

steeringdiodes.Dependingonthepaththatthecurrenttakes,theabsorptiondevicecanactivate.Theabsorption

devicehasatrigger,orthresholdvoltage,thatisabovethenormaloperatingvoltageoftheOPA1656butbelow

thedevicebreakdownvoltagelevel.Whenthisthresholdisexceeded,theabsorptiondevicequicklyactivates

andclampsthevoltageacrossthesupplyrailstoasafelevel.Whentheoperationalamplifierconnectsintoacircuit,asshownin圖43,theESDprotectioncomponentsare

intendedtoremaininactiveanddonotbecomeinvolvedintheapplicationcircuitoperation.However,

circumstancesmayarisewhereanappliedvoltageexceedstheoperatingvoltagerangeofagivenpin.Ifthis

conditionoccurs,thereisariskthatsomeinternalESDprotectioncircuitscanturnonandconductcurrent.Any

suchcurrentflowoccursthroughsteering-diodepathsandrarelyinvolvestheabsorptiondevice.圖43showsaspecificexamplewheretheinputvoltage(VIN)exceedsthepositivesupplyvoltage(V+)by500

mVormore.Muchofwhathappensinthecircuitdependsonthesupplycharacteristics.IfV+cansinkthe

current,oneoftheupperinputsteeringdiodesconductsanddirectscurrenttoV+.ExcessivelyhighcurrentlevelscanflowwithincreasinglyhigherIN.Asaresult,thedatasheetspecificationsrecommendthat

applicationslimittheinputcurrentto10mA.版權(quán)?2019,TexasInstrumentsIncorporated15OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019FeatureDescription()Ifthesupplyisnotcapableofsinkingthecurrent,VINcanbeginsourcingcurrenttotheoperationalamplifierand

thentakeoverasthesourceofpositivesupplyvoltage.Thedangerinthiscaseisthatthevoltagecanriseto

levelsthatexceedtheoperationalamplifierabsolutemaximumratings.Anothercommonquestioninvolveswhathappenstotheamplifierifaninputsignalisappliedtotheinputwhen

thepowersupplies(V+orV–)areat0V.Again,thisquestiondependsonthesupplycharacteristicwhenat0V,

oratalevelbelowtheinputsignalamplitude.Ifthesuppliesappearashighimpedance,thentheinputsource

suppliestheoperationalamplifiercurrentthroughthecurrent-steeringdiodes.Thisstateisnotanormalbias

condition;mostlikely,theamplifierdoesnotoperatenormally.Ifthesuppliesarelowimpedance,thenthecurrent

throughthesteeringdiodescanbecomequitehigh.Thecurrentleveldependsontheabilityoftheinputsource

todelivercurrent,andanyresistanceintheinputpath.Ifthereisanyuncertaintyabouttheabilityofthesupplytoabsorbthiscurrent,addexternalZenerdiodestothe

supplypins;see圖43.SelecttheZenervoltagesothatthediodedoesnotturnonduringnormaloperation.

However,theZenervoltagemustbelowenoughsothattheZenerdiodeconductsifthesupplypinbeginstorise

abovethesafe-operating,supply-voltagelevel.7.3.3EMIRejectionRatio(EMIRR)Theelectromagneticinterference(EMI)rejectionratio,orEMIRR,describestheEMIimmunityofoperational

amplifiers.Anadverseeffectthatiscommontomanyoperationalamplifiersisachangeintheoffsetvoltageasa

resultofRFsignalrectification.Anoperationalamplifierthatismoreefficientatrejectingthischangeinoffsetas

aresultofEMIhasahigherEMIRRandisquantifiedbyadecibelvalue.MeasuringEMIRRcanbeperformedin

manyways,butthisdocumentprovidestheEMIRRIN+,whichspecificallydescribestheEMIRRperformance

whentheRFsignalisappliedtothenoninvertinginputpinoftheoperationalamplifier.Ingeneral,onlythe

noninvertinginputistestedforEMIRRforthefollowingthreereasons:?OperationalamplifierinputpinsareknowntobethemostsensitivetoEMI,andtypicallyrectifyRFsignals

betterthanthesupplyoroutputpins.?Thenoninvertingandinvertingoperationalamplifierinputshavesymmetricalphysicallayoutsandexhibit

nearlymatchingEMIRRperformance.?EMIRRiseasiertomeasureonnoninvertingpinsthanonotherpinsbecausethenoninvertinginputpincan

beisolatedonaprinted-circuit-board(PCB).ThisisolationallowstheRFsignaltobeapplieddirectlytothe

noninvertinginputpinwithnocomplexinteractionsfromothercomponentsorconnectingPCBtraces.AmoreformaldiscussionoftheEMIRRIN+definitionandtestmethodisprovidedintheEMIRejectionRatioof

OperationalAmplifiersapplicationreport,availablefordownloadat.TheEMIRRIN+oftheOPA1656isplottedversusfrequencyin圖44.Ifavailable,anydualandquadoperational

amplifierdeviceversionshavenearlyidenticalEMIRRIN+performance.TheOPA1656unity-gainbandwidthis

20MHz.EMIRRperformancebelowthisfrequencydenotesinterferingsignalsthatfallwithintheoperational

amplifierbandwidth.1401201008060402010M100M1G10GFrequency(Hz)D115圖44.OPA1656EMIRRvsFrequency16版權(quán)?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019FeatureDescription()表1liststheEMIRRIN+valuesfortheOPA1656atparticularfrequenciescommonlyencounteredinreal-world

applications.Applicationslistedin表1canbecenteredonoroperatedneartheparticularfrequencyshown.This

informationcanbeofspecialinteresttodesignersworkingwiththesetypesofapplications,orworkinginother

fieldslikelytoencounterRFinterferencefrombroadsources,suchastheindustrial,scientific,andmedical(ISM)

radioband.表1.OPA1656EMIRRIN+forFrequenciesofInterestFREQUENCYAPPLICATIONORALLOCATIONEMIRRIN+400MHzMobileradio,mobilesatellite,spaceoperation,weather,radar,UHF36dB900MHzGSM,radiocommunicationandnavigation,GPS(to1.6GHz),ISM,

aeronauticalmobile,UHF42dB1.8GHzGSM,mobilepersonalcomm.broadband,satellite,L-band52dB2.4GHz802.11b/g/n,Bluetooth?,mobilepersonalcomm.,ISM,amateurradioandsatellite,S-band64dB3.6GHzRadiolocation,aerocomm./nav.,satellite,mobile,S-band67dB5GHz802.11a/n,aerocommunicationandnavigation,mobilecommunication,

spaceandsatelliteoperation,C-band77dBEMIRRIN+TestConfiguration圖45showsthecircuitconfigurationfortestingtheEMIRRIN+.AnRFsourceisconnectedtotheoperational

amplifiernoninvertinginputpinusingatransmissionline.Theoperationalamplifierisconfiguredinaunity-gain

buffertopologywiththeoutputconnectedtoalow-passfilter(LPF)andadigitalmultimeter(DMM).Alarge

impedancemismatchattheoperationalamplifierinputcausesavoltagereflection;however,thiseffectis

characterizedandaccountedforwhendeterminingtheEMIRRIN+.Theresultingdcoffsetvoltageissampled

andmeasuredbythemultimeter.TheLPFisolatesthemultimeterfromresidualRFsignalsthatcaninterferewith

multimeteraccuracy.SeetheEMIRejectionRatioofOperationalAmplifiersapplicationreportformoredetails.Ambienttemperature:25?&+VS±50Low-PassFilter+RFsourceDCBias:0VModulation:None(CW)FrequencySweep:201pt.Log-VSNotshown:0.1μFand10μFsupplydecouplingSample/AveragingDigitalMultimeter圖45.EMIRRIN+TestConfigurationSchematic7.4DeviceFunctionalModes7.4.1OperatingVoltageTheOPA1656operatesfrom±2.25Vto±18Vsupplieswhilemaintainingexcellentperformance.TheOPA1656

canoperatewithaslittleas4.5Vbetweenthesuppliesandwithupto36Vbetweenthesupplies.However,

someapplicationsdonotrequireequalpositiveandnegativeoutputvoltageswing.WiththeOPA1656,power-

supplyvoltagesarenotrequiredtobeequal.Forexample,thepositivesupplycanbesetto25Vwiththe

negativesupplyat–5V.Inallcases,thecommon-modevoltagemustbemaintainedwithinthespecifiedrange.Inaddition,key

parametersarespecifiedoverthetemperaturerangeofTA=–40°Cto125°C.版權(quán)?2019,TexasInstrumentsIncorporated17OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY20198ApplicationandImplementation注InformationinthefollowingapplicationssectionsisnotpartoftheTIcomponent

specification,andTIdoesnotwarrantitsaccuracyorcompleteness.TI’scustomersare

responsiblefordeterminingsuitabilityofcomponentsfortheirpurposes.Customersshould

validateandtesttheirdesignimplementationtoconfirmsystemfunctionality.8.1ApplicationInformation8.1.1BasicNoiseCalculationsLow-noisecircuitdesignrequirescarefulanalysisofallnoisesources.Externalnoisesourcescandominatein

manycases;considertheeffectofsourceresistanceonoverallopampnoiseperformance.Totalnoiseofthe

circuitistheroot-sum-squarecombinationofallnoisecomponents.圖46showsnoninverting(A)andinverting(B)opampcircuitconfigurationswithgain.Incircuitconfigurations

withgain,thefeedbacknetworkresistorscontributenoise.Ingeneral,thecurrentnoiseoftheopampreactswith

thefeedbackresistorstocreateadditionalnoisecomponents.Theselectedfeedbackresistorvaluesmakethesenoisesourcesnegligible.Lowimpedancefeedbackresistors

loadtheoutputoftheamplifier.Theequationsfortotalnoiseareshownforbothconfigurations.(A)NoiseinNoninvertingGainConfigurationNoiseattheoutputisgivenasEO,whereRR12GND±+EO44?421222+:E:1;'=l1+1p?:A;+:A;+kAo?4;+lE?dhp¨222504?40501244+4112:2;5=￥4?G$?6(-)?5d8?*VhThermalnoiseofRS>4/5?RS1?28:3;41?2=¨4?G$?6(-)?dhdh1+2?*VThermalnoiseofR1||R2+±VSSource,:4;G$=1.38065?1023dh-:5;6(-)=237.15+6(°%)>-?BoltzmannConstantTemperatureinkelvinsGND(B)NoiseinInvertingGainConfigurationNoiseattheoutputisgivenasEO,whereRSR1R2±242:5+1;?422+FEIG:6;1=l1+p?¨:0;2+k41+45?42o0?H5+15+1+42>4/5?+EO:5+1;?428:7;4145?42=¨4?G$?6(-)?HIdh5+1+42?*VThermalnoiseof(R1+RS)||R2

+VS±SourceGND:8;G$=1.38065?10F23d,h-BoltzmannConstantGND:9;6(-)=237.15+6(°%)>-?TemperatureinkelvinsCopyright?2017,TexasInstrumentsIncorporated(1)Nisthevoltagenoiseoftheamplifier.FortheOPA1656,eN=4.3nV/Hzat1kHz.(2)Nisthecurrentnoiseoftheamplifier.FortheOPA1656,iN=6fA/Hzat1kHz.(3)Foradditionalresourcesonnoisecalculations,seePrecisionLabsSeries.圖46.NoiseCalculationinGainConfigurations18版權(quán)?2019,TexasInstrumentsIncorporatedOPA1656ZHCSJH0A–MARCH2019–REVISEDJULY20198.2TypicalApplications8.2.1PreamplifierCircuitforVinylRecordPlaybackWithMoving-MagnetPhonoCartridgesThenoiseanddistortionperformanceoftheOPA1656isexceptionalinapplicationswithhighsource

impedances,whichmakesthesedevicesanexcellentchoiceinpreamplifiercircuitsformovingmagnetphono

cartridges.Thehighsourceimpedanceofthecartridge,andhighgainrequiredbytheRIAAplaybackcurveat

lowfrequency,requiresanamplifierwithbothlowinputcurrentnoiseandlowinputvoltagenoise.15VMMPhonoInputR147kC1150pFV+V±R2118k+±-15VOPA1656VOUTR310kR5100C5100uFR6100kOutputR4127C227nFC37.5nFC4100FCopyright?2018,TexasInstrumentsIncorporated圖47.PreamplifierCircuitforVinylRecordPlaybackWithMoving-MagnetPhonoCartridges(SingleChannelShown)DesignRequirements?Gain:40dB(1kHz)?RIAAAccuracy:±0.5dB(100Hzto20kHz)

?PowerSupplies:±15V版權(quán)?2019,TexasInstrumentsIncorporated19OPA1656ZHCSJH0A–MARCH2019–REVISEDJULY2019TypicalApplications()DetailedDesignProcedureVinylrecordsarerecordedusinganequalizationcurvespecifiedbytheRecordingInstituteAssociationof

America(RIAA)