微專業(yè)---半導(dǎo)體制造技術(shù)課程：半導(dǎo)體工程專業(yè)英語ContentsSemiconductorProperties半導(dǎo)體特性01SemiconductorMaterials半導(dǎo)體材料02SemiconductorDeviceandHowTheyareUsed半導(dǎo)體器件及其使用03ProcessTechnology工藝技術(shù)04FabricationProcesses制造工藝05SemiconductorMaterialsandProcessCharacterization半導(dǎo)體材料與工藝表征06SemiconductorMaterialsandProcessCharacterization6.1Purpose6.2Methods6.3ExamplesofApplications066SemiconductorMaterialsandProcessCharacterization1ChapterOverview

Thereisastrongcorrelationbetweenconditionofthematerialsusedtoprocessfunctionaldevice,andtheperformanceofsuchdevice.Therefore,itis

importanttoanyresearchanddevelopmentendeavorinvolvingsemiconductormaterials,andequallyimportanttothecommercialmanufacturingof

semiconductordevices,thatthephysicalandchemicalcharacteristicsofthe

processedmaterialareknownandcontrolledateverystageofthefabrication

procedures.Forthatreason,characterizationofsemiconductormaterials

anddevicesisanintegralpartofanysemiconductorengineeringeffort./?k??r??le??(?)n/關(guān)聯(lián)/?n?dev?r/嘗試/??nt?ɡr?l/完整的，必須的2Introduction

Toreiteratethepointmadeearlier,operationofsemiconductordevicesdependsontheintricatephysicalinteractionsbetweenoutsidestimuli(current,voltage,light,temperature,andothers),andsemiconductormaterials.Therefore,inordertoassurepredictable,controllable,andreproducible

characteristicsofthedevice,propertiesofthematerialsusedtofabricate

anygivendevicemustbeknownnotonlyintermsoftheirinherentcharacteristics,butalsointermsofthepotentialchangesinflictedbytheprocesses

discussedinChapter5ofthisvolume./??ntr?k?t/復(fù)雜的6.1Purpose/?n?her?nt/內(nèi)在的/ri??t?re?t/重述/pr??d?kt?b(?)l/可預(yù)測的6SemiconductorMaterialsandProcessCharacterization/?st?mj?la?/激勵(lì)/?n?fl?kt?d/造成的/?ri?pr??du?s?bl/可重現(xiàn)2Processmonitoring

isanindispensablepartofanymanufacturingendeavor.Itisessentialtotheoutcomeofthefabricationprocedurestoknow

whatistheconditionofthesemiconductorwaferunderprocessingateach

andeverystageofthefabricationprocess.Thus,semiconductormanufacturingprocessesmustbethoroughlymonitored.

Thegoaloftheprocessmonitoringistodetectpossibleprocessmalfunctionassoonasitactuallyoccurs.Otherwise,withwafersgettinglarger

andmoreexpensive,thecostofmanufacturingprocessesincreasing,andthe

numberofoperationsperformedoneachwafergrowing,lossesresultingfromanyprocessmalfunctioncouldbestaggering./?st?ɡ?r??/令人吃驚的6.1Purpose/??nd??spens?b(?)l/必需的/?m?l?f??k?(?)n/失效6SemiconductorMaterialsandProcessCharacterization26.1Purpose6SemiconductorMaterialsandProcessCharacterization(a)Off-lineprocessmonitoringondesignatedtestwafers,(b)in-lineprocessmonitoringontheproductionwafers.2Introduction

Thereviewofmethodsusedinthesemiconductormaterialsandprocess

characterizationdistinguishesbetweenphysical/chemical,optical,andelectricaltechniques./d??st??ɡw??/區(qū)別6.2Methods6SemiconductorMaterialsandProcessCharacterization2Physical/chemicalmethods.Severaltechniquesinthiscategoryoperate

basedontheprinciplesofspectroscopywhichreliesonthedetermination

ofthespectraproducedasaresultofthesolidinteractingwiththeshort

wavelengthelectromagnetic

radiation,X-raysforinstance,orparticlessuch

aselectrons,orions.Inordertoassureinteractionsofthisnaturearenot

disturbed,mostofthemethodsinthiscategoryneedtobecarriedoutin

vacuumenvironment./?re?di?e??(?)n/輻射6SemiconductorMaterialsandProcessCharacterization6.2Methods/??lektro?m?ɡ?net?k/電磁的/spek?trɑ?sk?pi/光譜學(xué)2/s??l?ndr?k(?)l/圓柱形的6SemiconductorMaterialsandProcessCharacterization6.2Methods(a)Beamofionsisimpingingonthesurfacecausingejectionofions

whicharethenidentifiedbymeansofmassspectrometry,(b)EnergyofX-raysis

absorbedbythesolidcausingemissionofsecondary(Auger)electronsenergyof

whichisdeterminedbyCylindricalMirror

Analyzer./spek?trɑ?m?tri/質(zhì)譜法/??d?ek?(?)n/噴濺/???ɡ?r/俄歇2Opticalmethods.Aseparatecategoryofmaterialscharacterizationmethodsusedinsemiconductorengineeringisdefinedas“optical”becausethey

useopticalwavelengths(fromUVtovisibletoinfrared)tointeractwith

solids.Animportantadvantageouscharacteristicoftheopticalmeasurementsisthattheyarenon-destructiveandnon-invasivewhichmeansthat

theydonotaffectmeasuredmaterials./??nfr??red/紅外線的6SemiconductorMaterialsandProcessCharacterization6.2Methods/?nɑ?n?n?ve?s?v/非侵入性2/ski?m/方式6SemiconductorMaterialsandProcessCharacterization6.2MethodsSchematicillustrationoftheoperationofanellipsometer./?l?p?s?m?t?r/橢圓偏振計(jì)/?po?l?ra?z?r/偏振片2Electricalmethods.Unliketechniquesofphysical/chemicalandoptical

characterizationofsemiconductorsconsideredabove,electricalmethodsrevealpropertiesofthematerialwhicharethedirectpredictorsoftheperformanceofthedevice./pr??d?kt?rz/預(yù)測6SemiconductorMaterialsandProcessCharacterization6.2Methods2Introduction

Forinstance,ifthroughthecapacitance-voltagemeasurementsoftheMOScapacitoritisdeterminedthatoxide-semiconductorinterfacefeatureshighdensityofinterfacetraps,thenstepsneedtobetakentodeterminewhetherthereasonisrelatedtochemicalcompositionoftheinterfaceregion,orstructuralimperfectionsofsemiconductorsurfaceintheinterfaceregion,orboth.Theanswertothefirstquestioncanbeobtainedbycarefuldepthprofilingoftheoxide-semiconductorstructurebymeansofAugerspectroscopy,forinstance.Toanswerthesecondone,oxidecouldbeetchedoffusingwetchemistryandthensurfaceroughnessanalyzedbymeansoftheAtomicForceMicroscopy(AFM)./?pro?fa?l??/剖析6.3ExamplesofApplications6SemiconductorMaterialsandProcessCharacterization/??mp?r?fek??n/缺陷20In-classexercisConnecttheEnglishwords/phrasesandChinesemeaningwithlines.Microscopyparticlecounterprocessmonitoringsurfaceenergyfour-probemethod工藝監(jiān)控四探針法表面能粒子計(jì)數(shù)器顯微鏡6SemiconductorMaterialsandProcessCharacterization21In-classexercisFillintheblankswithproperwordsorphrases.1.SeveraltechniquesinPhysical/chemicalmethodsoperate

basedontheprinciplesof

.

2.Animportantadvantageouscharacteristicoftheopticalmeasurementsisthattheyare

and

whichmeansthat

theydonotaffectmeasuredmaterials.6SemiconductorMaterialsandProcessCharacterization22單詞/短語音標(biāo)中文含義AtomicForceMicroscopy(AFM)/??tɑ?m?k

f??rsma??krɑ?sk?pi

/原子力顯微鏡AugerElectronSpectroscopy(AES)/???ɡ?r

??lektrɑ?nspek?trɑ?sk?pi

/俄歇電子能譜Augerelectron/???ɡ?r/俄歇電子CylindricalMirrorAnalyzer(CMA)/s??l?ndr?k(?)l/柱面鏡分析儀depthprofiling/?pro?fa?l??/深度剖析electrondiffraction/d??fr?k?n/電子衍射electronenergyanalyzer/??n??la?z?r/電子能量分析儀electronmicroscopy/ma??krɑ?sk?pi/電子顯微學(xué)ellipsometry/?lep?sɑ?m?tr?/橢圓偏振KeyTerms6SemiconductorMaterialsandProcessCharacterization23單詞/短語音標(biāo)中文含義end-pointdetection/d??tek?(?)n/終點(diǎn)檢測four-probemethod/pro?b/四探針法FourierTransformInfrared/?f?ri?rtr?ns?f??rm??nfr??red/傅里葉變換紅外Spectroscopy(FTIR)/spek?trɑ?sk?pi/光譜High-EnergyElectronDiffraction(HEED)/d??fr?k?n/高能電子衍射hydrophilicsurface/?ha?dr??f?l?k/親水表面hydrophobicsurface/?ha?dr??fo?b?k/疏水表面infrared(IR)spectroscopy/??nfr??redspek?trɑ?sk?pi/紅外光譜laserinterferometry/?le?z?r?nt?f??r?m?tri/激光干涉法6SemiconductorMaterialsandProcessCharacterization24單詞/短語音標(biāo)中文含義Low-EnergyElectronDiffraction(LEED)/d??fr?k?n/低能電子衍射massspectrometer/m?sspek?trɑ?m?t?r/質(zhì)譜儀non-contactmethod/nɑ?n-?kɑ?nt?kt/非接觸法OpticalEmissionSpectroscopy(OES)/?ɑ?pt?k(?)l??m??(?)nspek?trɑ?sk?pi/光學(xué)發(fā)射光譜opticalmicroscopy/?ɑ?pt?k(?)lma??krɑ?sk?pi/光學(xué)顯微鏡particlecounter/?pɑ?rt?k(?)l?ka?nt?r/粒子計(jì)數(shù)器processdiagnostic/?da??ɡ?nɑ?st?k/工藝診斷processmonitoring/?mɑn?t?r??/工藝監(jiān)控profilometry/pr??fa?'l?m?tr?/輪廓測量法pyrometry/pa???rɑ?m?tri/高溫測量法ReflectionHigh-EnergyElectronDiffraction(RHEED)/r??flek?(?)n//d??fr?k?n/反射高能電子衍射6SemiconductorMaterialsandProcessCharacterization25單詞/短語音標(biāo)中文含義ScanningElectronMicroscopy(SEM)/?sk?n????lektrɑ?n

ma??krɑ?sk?pi/掃描電子顯微鏡ScanningTunnelingMicroscopy(STM)/?t?nl??/掃描隧穿顯微鏡SecondaryIonMassSpectroscopy(SIMS)/?sek?nderi/二次離子質(zhì)譜spectroscopicellipsometry/?spektr??skɑ?p?k?lep?sɑ?m?tr?/光譜橢圓偏振SPVmethod/?meθ?d/表面光電壓法surfaceenergy/?s??rf?s?en?rd?i/表面能SurfacePhotovoltage(SPV)/?vo?lt?d?/表面光電壓surfaceroughness/?r?fn?s/表面粗糙度Time-of-FlightSIMS(TOF-SIMS)/fla?t/飛行時(shí)間二次離子質(zhì)譜TotalReflectionX-RayFluorescence(TXRF)/r??flek?(?)n//fl??resns/全反射X射線熒光TransmissionElectronMicroscopy(TEM)/tr?nz?m??(?)n/透射電子顯微鏡6SemiconductorMaterialsandProcessCharacterization26單詞/短語音標(biāo)中文含義wetting(contact)angle/???ɡ(?)l/浸潤(接觸)角X-RayDiffraction(XRD)/d??fr?k?n/X射線衍射X-RayPhotoelectronSpectroscopy/?fo?to???lektrɑ?n//spek?trɑ?sk?pi/X射線光電子能譜6SemiconductorMaterialsandProcessCharacterization2Introduction

Forinstance,ifthroughthecapacitance-voltagemeasurementsoftheMOScapacitoritisdeterminedthatoxide-semiconductorinterfacefeatureshighdensityofinterfacetraps,thenstepsneedtobetakentodeterminewhetherthereasonisrelatedtochemicalcompositionoftheinterfaceregion,orstructuralimperfectionsofsemiconductorsurfaceintheinterfaceregion,orboth.Theanswertothefirstquestioncanbeobtainedbycarefuldepthprofilingoftheoxide-semiconductorstructurebymeansofAugerspectroscopy,forinstance.Toanswerthesecondone,oxidecouldbeetchedoffusingwetchemistryandthensurfaceroughnessanalyzedbymeansoftheAtomicForceMicroscopy(AFM)./?pro?fa?l??/剖析6.3ExamplesofApplications6SemiconductorMaterialsandProcessCharacterization/??mp?r?fek??n/缺陷20In-classexercisConnecttheEnglishwords/phrasesandChinesemeaningwithlines.Microscopyparticlecounterprocessmonitoringsurfaceenergyfour-probemethod工藝監(jiān)控四探針法表面能粒子計(jì)數(shù)器顯微鏡6SemiconductorMaterialsandProcessCharacterization21In-classexercisFillintheblankswithproperwordsorphrases.1.SeveraltechniquesinPhysical/chemicalmethodsoperate

basedontheprinciplesof

.

2.Animportantadvantageouscharacteristicoftheopticalmeasurementsisthattheyare

and

whichmeansthat

theydonotaffectmeasuredmaterials.6SemiconductorMaterialsandProcessCharacterization22單詞/短語音標(biāo)中文含義AtomicForceMicroscopy(AFM)/??tɑ?m?k

f??rsma??krɑ?sk?pi

/原子力顯微鏡AugerElectronSpectroscopy(AES)/???ɡ?r

??lektrɑ?nspek?trɑ?sk?pi

/俄歇電子能譜Augerelectron/???ɡ?r/俄歇電子CylindricalMirrorAnalyzer(CMA)/s??l?ndr?k(?)l/柱面鏡分析儀depthprofiling/?pro?fa?l??/深度剖析electrondiffraction/d??fr?k?n/電子衍射electronenergyanalyzer/??n??la?z?r/電子能量分析儀electronmicroscopy/ma??krɑ?sk?pi/電子顯微學(xué)ellipsometry/?lep?sɑ?m?tr?/橢圓偏振KeyTerms6SemiconductorMaterialsandProcessCharacterization23單詞/短語音標(biāo)中文含義end-pointdetection/d??tek?(?)n/終點(diǎn)檢測four-probemethod/pro?b/四探針法FourierTransformInfrared/?f?ri?rtr?ns?f??rm??nfr??red/傅里葉變換紅外Spectroscopy(FTIR)/spek?trɑ?sk?pi/光譜High-EnergyElectronDiffraction(HEED)/d??fr?k?n/高能電子衍射hydrophilicsurface/?ha?dr??f?l?k/親水表面hydrophobicsurface/?ha?dr??fo?b?k/疏水表面infrared(IR)spectroscopy/??nfr??redspek?trɑ?sk?pi/紅外光譜laserinterferometry/?le?z?r?nt?f??r?m?tri/激光干涉法6SemiconductorMaterialsandProcessCharacterization24單詞/短語音標(biāo)中文含義Low-EnergyElectronDiffraction(LEED)/d??fr?k?n/低能電子衍射massspectrometer/m?sspek?trɑ?m?t?r/質(zhì)譜儀non-contactmethod/nɑ?n-?kɑ?nt?kt/非接觸法OpticalEmissionSpectroscopy(OES)/?ɑ?pt?k(?)l??m??(?)nspek?trɑ?sk?pi/光學(xué)發(fā)射光譜opticalmicroscopy/?ɑ?pt?k(?)lma??kr