探秘門電路：二極管與三極管的開關(guān)特性原理及應(yīng)用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplications探秘門電路：二極管與三極管的開關(guān)特性原理及應(yīng)用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplicationsTeacher:JiaLisi授課教師：賈麗斯門電路掌控信號的流通與阻斷

Gatecircuitscontroltheflowandblockingofsignals.二極管

Diodes三極管

Transistors門電路的基礎(chǔ)元件

Fundamentalcomponentsofgates探秘門電路：二極管與三極管的開關(guān)特性原理及應(yīng)用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplicationsPart01學(xué)習(xí)目標LearningObjectives能力培養(yǎng)：Capacitybuilding:學(xué)習(xí)目標LearningObjectives知識掌握:Knowledgemastery:二極管、三極管開關(guān)特性原理。Principlesofswitchingcharacteristicsofdiodesandtransistors.分析二極管、三極管在簡單電路中的工作狀態(tài)。Analyzeworkingconditionsofdiodesandtransistorsinsimplecircuits.運用二極管、三極管實現(xiàn)基本邏輯功能。Usediodesandtransistorstoimplementbasiclogicalfunctions.素養(yǎng)提升：Literacyimprovement:認識相關(guān)知識的應(yīng)用價值。Recognizetheapplicationvalueofrelevantknowledge.培養(yǎng)科學(xué)態(tài)度與創(chuàng)新思維。cultivateascientificattitudeandinnovativethinking.Part02案例導(dǎo)入CaseIntroduction燈滅

Turnoff

案例導(dǎo)入CaseIntroduction電燈按鈕開關(guān)（按亮按滅）Lightswitch(turnonandturnoff)燈亮Turnon案例導(dǎo)入CaseIntroduction二極管

Diodes

三極管

Transistors

案例導(dǎo)入CaseIntroduction二極管

Diodes

三極管

Transistors

無需機械操作Nomechanicaloperationrequired

電子開關(guān)

Electronicswitches通過電信號控制Controlledbyelectricalsignals

例如，在計算機的數(shù)據(jù)存儲和處理電路中，就大量運用了二極管和三極管的開關(guān)特性來存儲和傳輸0、1數(shù)字信號。案例導(dǎo)入CaseIntroductionForexample,computerdatastorageandprocessingcircuitsmakeextensiveuseoftheswitchingcharacteristicsofdiodesandtransistorstostoreandtransmitdigitalsignals(0sand1s).二極管、三極管的開關(guān)特性Switchingcharacteristicsofdiodesandtransistors

門電路的基本概念

Basicconceptsofgatecircuits探秘門電路：二極管與三極管的開關(guān)特性原理及應(yīng)用Exploringgatecircuits:switchingcharacteristicsofdiodesandtransistorsandtheirapplicationsPart03二極管的開關(guān)特性SwitchingcharacteristicsofdiodesNP電極引線Electrodelead管殼Case結(jié)構(gòu)與開關(guān)原理Structureandprinc二極管的開關(guān)特性Switchingcharacteristicsofdiodes負極

Negativeelectrode正極

Positiveelectrode結(jié)構(gòu)：PN結(jié)Structure:PNjunctionP區(qū)：陽極Pregion:anodeN區(qū)：陰極Nregion:cathodePN結(jié)PNjunction導(dǎo)通Conduction正向電壓（P高、N低）＞導(dǎo)通壓降（硅0.7V，鍺0.3V），電流從陽極→陰極，等效開關(guān)閉合；Forwardvoltage(Pishigh,andNislow)>conductionvoltagedrop(0.7Vforsilicon,0.3Vforgermanium),currentflowsfromanodetocathode,equivalenttoaclosedswitch;結(jié)構(gòu)與開關(guān)原理StructureandprincPN負極

Negativeelectrode正極

Positiveelectrode截止CutoffPN結(jié)PNjunction電極引線Electrodelead管殼Case反向電壓，無電流，等效開關(guān)斷開。Whenareversevoltageisapplied,nocurrentflows,equivalenttoanopenswitch.二極管的開關(guān)特性Switchingcharacteristicsofdiodes等效電路Equivalentcircuit:二極管的開關(guān)特性Switchingcharacteristicsofdiodes導(dǎo)通時：可等效為“一個具有導(dǎo)通壓降的閉合開關(guān)”，如硅二極管導(dǎo)通時等效為一個0.7V的電壓源與一個小電阻串聯(lián)。Whenconducting:itisequivalentto“aclosedswitchwithaconductionvoltagedrop”.Forexample,whenasilicondiodeisconducting,itisequivalenttoa0.7Vvoltagesourceconnectedinserieswithasmallresistor.截止時：等效為“斷開的開關(guān)”，電阻極大（通常視為無窮大），可近似認為“無電流通過”。Whenitiscutoff:itisequivalenttoanopenswitchwithaverylargeresistance(usuallyconsideredtobeinfinite),andcanbeapproximatedas"nocurrentflowing".PtypeNtype等效電路Equivalentcircuit:二極管的開關(guān)特性Switchingcharacteristicsofdiodes導(dǎo)通時：可等效為“一個具有導(dǎo)通壓降的閉合開關(guān)”，如硅二極管導(dǎo)通時等效為一個0.7V的電壓源與一個小電阻串聯(lián)。Whenconducting:itisequivalentto“aclosedswitchwithaconductionvoltagedrop”.Forexample,whenasilicondiodeisconducting,itisequivalenttoa0.7Vvoltagesourceconnectedinserieswithasmallresistor.截止時：等效為“斷開的開關(guān)”，電阻極大（通常視為無窮大），可近似認為“無電流通過”。Whenitiscutoff:itisequivalenttoanopenswitchwithaverylargeresistance(usuallyconsideredtobeinfinite),andcanbeapproximatedas"nocurrentflowing".InternalelectricfieldPtyperegionSpacechargeregionNtyperegion等效電路Equivalentcircuit:二極管的開關(guān)特性Switchingcharacteristicsofdiodes導(dǎo)通時：可等效為“一個具有導(dǎo)通壓降的閉合開關(guān)”，如硅二極管導(dǎo)通時等效為一個0.7V的電壓源與一個小電阻串聯(lián)。Whenconducting:itisequivalentto“aclosedswitchwithaconductionvoltagedrop”.Forexample,whenasilicondiodeisconducting,itisequivalenttoa0.7Vvoltagesourceconnectedinserieswithasmallresistor.截止時：等效為“斷開的開關(guān)”，電阻極大（通常視為無窮大），可近似認為“無電流通過”。Whenitiscutoff:itisequivalenttoanopenswitchwithaverylargeresistance(usuallyconsideredtobeinfinite),andcanbeapproximatedas"nocurrentflowing".開關(guān)時間Switchingtime二極管的開關(guān)特性Switchingcharacteristicsofdiodes開通時間

Turn-ontime實際二極管的開關(guān)切換并非瞬時完成，存在兩個關(guān)鍵時間：Theactualswitchingofadiodeisnotinstantaneous.Therearetwocriticaltimes:從截止到導(dǎo)通的時間，通常極短，工程分析中可忽略。Thetimefromcutofftoconduction,whichisusuallyveryshortandcanbeignoredinengineeringanalysis.從導(dǎo)通到截止的時間，相對較長。Reverserecoverytime:Thetimefromconductiontocutoff,whichisrelativelylong.反向恢復(fù)時間

Reverserecoverytime注意：反向恢復(fù)時間會限制二極管的開關(guān)速度，在高頻數(shù)字電路（如射頻信號處理）中需重點考慮。Note:Reverserecoverytimelimitstheswitchingspeedofthediodeandisakeyconsiderationinhigh-frequencydigitalcircuits(suchasRFsignalprocessing).

PtypeNtypePart04三極管的開關(guān)特性Switchingcharacteristicsoftransistors結(jié)構(gòu)與工作區(qū)域Structureandworkingarea三極管的開關(guān)特性SwitchingcharacteristicsoftransistorsCP+nPCEPNP型

PNPType

n-pnENPN型

NPNType

發(fā)射極（E）

Emitter

（E）基極（B）

Base

集電極（C）

Collector（C）基本結(jié)構(gòu)Basicstructure以NPN為例

TaketheNPNtypeasanexample兩個PN結(jié)（發(fā)射結(jié)：B-E之間；集電結(jié)：B-C之間）

TwoPNjunctions(Emitterjunction:betweenbaseandemitter;Collectorjunction:betweenbaseandcollector)NPNBaseb基級bCollectorc集電極cEmitterc發(fā)射極cCollectorregion集電區(qū)Collectorjunction集電結(jié)Baseregion基區(qū)Emitterjunction發(fā)射結(jié)Emitterregion發(fā)射區(qū)三極管的開關(guān)特性Switchingcharacteristicsoftransistors三極管的開關(guān)特性Switchingcharacteristicsoftransistors△ic△ib放大區(qū)飽和區(qū)IB4IB3IB2IB4IB=0UCEUCE截止區(qū)截止區(qū)?：Cutoffregion:工作條件：OperatingConditions:發(fā)射結(jié)反偏（B電位<E電位）Emitterjunctionreversebiased(Bpotential<Epotential)集電結(jié)反偏（B電位<C電位）Collectorjunctionreversebiased(Bpotential<Cpotential)集電極電流Ic≈0，C-E之間電阻極大，相當(dāng)于“開關(guān)斷開”，輸出高電平。CollectorcurrentIc≈0,andtheresistancebetweenCandEisextremelylarge,equivalenttoa“openswitch“,resultinginahighoutputlevel.?特點CharacteristicsSaturationregionCutoffregionAmplificationregion三極管的開關(guān)特性Switchingcharacteristicsoftransistors飽和區(qū)?：SaturationRegion:工作條件：OperatingConditions:發(fā)射結(jié)正偏（B電位>E電位，且電壓>0.7V）Emitterjunctionforwardbiased(Bpotential>Epotential,andvoltage>0.7V)集電結(jié)正偏（B電位>C電位）Collectorjunctionforwardbiased(Bpotential>Cpotential)C-E之間電壓極?。柡蛪航礥ces≈0.3V），電阻極小，相當(dāng)于“開關(guān)閉合”，輸出低電平。ThevoltagebetweenCandEisextremelysmall(saturationvoltagedropUces≈0.3V),andtheresistanceisextremelylow,equivalenttoa"closedswitch"withalowoutput.特點CharacteristicsSaturationregionCutoffregionAmplificationregion三極管的開關(guān)特性Switchingcharacteristicsoftransistors電流關(guān)系與控制Currentrelationshipandcontrol公式

FormulaIe=Ib+Ic（發(fā)射極電流=基極電流+集電極電流）。(Emittercurrent=basecurrent+thecollectorcurrent)控制核心

Keyofcontrolling改變Ib，切換截止/飽和狀態(tài)。ChangeIbtoswitchesthecutoff/saturationstate.ceb+RIcIevIb△ic△ib放大區(qū)飽和區(qū)IB4IB3IB2IB4IB=0UCEUCE截止區(qū)三極管的開關(guān)特性Switchingcharacteristicsoftransistors開關(guān)時間Switchingtime開啟時間（ton）

Turn-ontime截止→飽和的時間

timeofcutofftosaturation

關(guān)斷時間（toff）

Turn-offtime飽和→截止的時間

timeofsaturationtocutoff

SaturationregionCutoffregionAmplificationregion三極管的開關(guān)特性Switchingcharacteristicsoftransistors開關(guān)時間Switchingtime開啟時間（ton）

Turn-ontime截止→飽和的時間

timeofcutofftosaturation

關(guān)斷時間（toff）

Turn-offtime飽和→截止的時間

timeofsaturationtocutoff

關(guān)斷時間通常大于開啟時間，且三極管飽和程度越深（Ib越大），存儲時間越長，關(guān)斷速度越慢，設(shè)計時需避免過度飽和。Theturn-offtimeisusuallylongerthantheturn-ontime,andthedeeperthetransistorsaturation(thelargerIb),thelongerthestoragetimeandtheslowertheturn-offspeed.Over-saturationshouldbeavoidedduringdesign.SaturationregionCutoffregionAmplificationregionPart05案例分析

CaseStudy

基于二極管與三極管的邏輯門

Logicgatesbasedondiodesandtransistors

電路結(jié)構(gòu)

Circuitstructure

二極管D1、D2的陽極分別接輸入信號A、B，陰極共同連接輸出端Y，輸出端通過電阻R接電源Vcc。TheanodesofdiodesD1andD2areconnectedtoinputsignalsAandBrespectively,andtheircathodesareconnectedtotheoutputterminalY.TheoutputterminalisconnectedtothepowersupplyVccthroughresistorR.案例分析CaseStudy二極管與門

DiodeANDGate

基于二極管與三極管的邏輯門

Logicgatesbasedondiodesandtransistors

案例分析CaseStudy二極管與門

DiodeANDGate

A、B均高電平→二極管截止，Y高電平；WhenbothAandBareathighlevel,bothdiodesareturnedoff,andYoutputsahighlevel.其余輸入→二極管導(dǎo)通，Y低電平（硅0.7V），實現(xiàn)“與”邏輯。Forallotherinputcombinations,oneofthediodesalwaysconducts,clampingYtoalowlevel(about0.7Vforasilicondiode),whichimplementsANDlogic.邏輯功能分析：

sLogicalfunctionanalysis:

結(jié)論：只有A、B均為高電平時，Y才為高電平，實現(xiàn)“與”邏輯（Y=A?B）

Conclusion:OnlywhenAandBarebothathighlevel,Yisathighlevel,realizingthe"AND"logic(Y=A?B)三極管構(gòu)成的“非門”電路

"NOTgate"circuitcomposedoftransistors

案例分析CaseStudy三極管非門

TransistorNOTGate

電路結(jié)構(gòu)

Circuitstructure

NPN型三極管的基極通過電阻Rb接輸入信號A，集電極通過電阻Rc接電源Vcc（5V），發(fā)射極接地（0V），輸出信號Y取自集電極（C極）。ThebaseoftheNPNtransistorisconnectedtotheinputsignalAthroughresistorRb,thecollectorisconnectedtothepowersupplyVcc(5V)throughresistorRc,theemitterisgrounded(0V),andtheoutputsignalYistakenfromthecollector(Cpole).三極管構(gòu)成的“非門”電路

"NOTgate"circuitcomposedoftransistors

案例分析CaseStudy三極管非門

TransistorNOTGate

A低電平→三極管截止，Y高電平；WhenAisatlowlevel,thetransistorisinthecut-offstateandYoutputsahighlevel;A高電平→三極管飽和，Y低電平，實現(xiàn)“非”邏輯。WhenAisatahighlevel,thetransistorisinsaturatedstate,andYoutputsalowlevel,completingthe"not"logicfunction.邏輯功能分析：

sLogicalfunctionanalysis:

結(jié)論：當(dāng)A為高電平時，三極管飽和導(dǎo)通，Y輸出低電平，完成"非"邏輯功能。

Conclusion:WhenAisathighlevel,thetransistorissaturatedandconductive,Youtputsalowlevel,completingthe"not"logicfunction.教學(xué)重點梳理

Keypointsofteaching二極管開關(guān)特性

Switchingcharacteristicsofdiodes正向?qū)?反向截止原理Principlesofforwardconductionandreversecutoff導(dǎo)通壓降、開關(guān)時間影響Effectsofconductionvoltagedropandswitchingtime.三極管開關(guān)特性Switchingcharacteristicsoftransistors截止區(qū)/飽和區(qū)工作狀態(tài)

workingconditionsinthecut-offregionandthesaturationregionIb對Ic的控制

ControleffectoftheIbonIc開關(guān)時間特點Characteristicsoftheswitchingtime

電路分析能力Circuitanalysiscapabilities:跟據(jù)元件連接、輸入信號，判斷工作狀態(tài)，分析輸出。Judgetheworkingstatus,andanalyzetheoutputbasedontheconnectionandinputsignal.職業(yè)崗位應(yīng)用

Applicationofjobs

電路測試工程師

Circuittestengineer應(yīng)用場景：檢測數(shù)字電路故障（如邏輯門輸出異常、芯片功能失效）。

Applications:Detectingdigitalcircuitfaults(suchasabnormallogicgateoutputandchipmalfunction).工作內(nèi)容：依據(jù)二極管、三極管的開關(guān)特性原理，通過測量電壓、電流等參數(shù)來判斷元件是否正常工作。Responsibilities:Basedontheswitchingcharacteristicsofdiodesandtransistors,measureparameterssuchasvoltageandcurrenttodeterminewhethercomponentsarefunctioningproperly.職業(yè)崗位應(yīng)用

Applicationofjobs

集成電路設(shè)計工程師

Integratedcircuitdesignengineer應(yīng)用場景：設(shè)計數(shù)字芯片（如CPU、內(nèi)存、邏輯芯片）。

Applications:Designofdigitalchips(suchasCPUs,memory,andlogicchips).工作內(nèi)容：精確控制二極管和三極管的特性參數(shù)，以提高芯片的性能和可靠性。

Responsibilities:Preciselycontrolthecharacteristicp