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第1題Whichofthefollowingwavelengthsoflightisvisibletothehumaneye?()A320nmB460nmC880nmD1200nm第2題Thelensofthehumaneyeissimilartowhichoneofthephotoelectricdetectionsystem.(

)AopticalsystemBphotoelectricsensorCfilter第3題Inthevarioustransitionsofatoms,inwhichwaylasermaybeproduced()AspontaneousradiationBstimulatedabsorptionCstimulatedradiationDalloftheabove第4題Inthelaser,themainfunctionofopticalresonatoris(

).AlightconcentrationBlightreflectionClightamplificationDlightloss第5題Whichmethodisusedtoobtaintheinversiondistributionofparticlenumberinrubylaser?(

)AelectricalexcitationBopticalexcitationCchemicalexcitation第6題InN-typesemiconductor,theminoritycarriersare().AelectronsBholesCphotons第7題Thephotonsproducedbytheexcitedradiationareperfectlycoherentwiththeincidentphotons第8題Spontaneousradiationcanproducecoherentlight第9題IfthePNjunctionreversebiasvoltageincreases,thereversecurrentinthecircuitwill(

)AbecomelargerBbecomesmallerCremainthesame第10題WhenthePNjunctionisreversebiased,thejunctionresistanceissmallandtheloopcurrentislarge第11題Theinversedistributionofparticlenumbersisthatthenumberofparticlesathigherenergylevelsisgreaterthanthenumberofparticlesatlowerenergylevels第12題Inthecaseofthesameexternalpowersupply,theloopcurrentrelationshipbetweenFigure1andFigure2is（）FIG.1FIG.2AI1=I2BI1>I2

CI1<I2第13題Inhumaneyes,thefunctionequivalenttophotoelectricsensoris().AThecorneaBTheirisCTheretinaDThephotoreceptorcellsintheretina第1題If

thePMTmultiplicationsystemhas8multiplicationelectrodesand

theemissioncoefficientofsecondaryelectronsis3,thenideally,

thecurrentgainofthephotomultipliertubeis()A6203B6561C7021D7083第2題The

switchcontrolcircuitofautomobilelightsoftenusesa

photoresistorasasensor.

Thefollowingfigureshowsthespectralresponseofthreetypesof

photoresistors,

whichsensorinthefigure

is

themostsuitablefortheautolampauto-oncontrolcircuit.()A1B2C3第3題The

lightmeterusuallyusesthephotocellasthesensor.Inthesensing

circuit,theloadresistanceRofthephotocellshouldbeas

follows.()AR=Rm(optimalloadvalue)BR=0CThebiggerRis,thebetter第4題Photomultipliertubesarephotoelectricdevicesbasedon().AphotoemissioneffectBphotogeneratedvolteffectCphotoconductanceeffect第5題Inordertominimizethecathodenoise,thehighvoltagesupplycircuitofthephotomultipliertubeshouldbeintheformof().AAnodegroundingmethodBCathodegroundingmethodCBothoftheabove第6題Inthesplit-voltagecircuitofthephotomultipliertube,thedistributionprincipleoftheintermediatestagesplit-voltageresistanceis().AgraduallyincreaseBgraduallydecreaseCuniformdistribution第7題Inthephotomultipliervoltagedividercircuit,thelaststagedividerresistorshouldbe()AhigherthantheintermediatestageBequaltotheintermediatelevelClowerthantheintermediatelevel第8題Photoresistorsaremadeintosnakestructuresforthepurposeof(

)AincreasethelightreceivingareaBincreasethedarkresistanceCincreasethedarkcurrentDreducethedarkresistance第9題Thephotodiodeisanoptoelectronicdevicebasedon().AphotoemissioneffectBphotovoltaiceffectCphotoconductiveeffect第10題Theconnectionmethodofphotosensitivediodeinthecircuitis().AforwardbiasBreversebiasCdependsontheactualsituation第11題PINphotodiodeshaveathicker()APlayerBIlayerCNlayer第12題Photosensitivetriodecomparedwithphotosensitivediode,whichofthefollowingistrue(

)AbetterlinearityBbettertemperaturecharacteristicsCbetterfrequencycharacteristicsDismoresuitableasaphotoelectricswitch

第13題Photocellsarephotoelectricdevicesbasedon()AphotoemissioneffectBphotogeneratedvolteffectCphotoconductanceeffect第14題Inthesolarenergyacquisitionsystem,theresistancevalueofthephotocellloadresistanceRshouldbethefollowing(

)AR=Rm(optimalloadvalue)BR=0CThebiggerRis,thebetter第15題Itisknownthatthebandgapwidthofacertainphotoconductivematerialis1.20ev,thenthered-limitedwavelengthofthismaterialis()A880.46nmB1106.25nmC1032.5nmD1238.45nm第16題WhendesigningphotoelectricdetectioncircuitbasedonAPD,whichofthefollowingiswrong(

)A

addovervoltageprotectioncircuitBaddcurrentlimitingcircuitCaddlow-passfiltercircuitDaddhigh-passfiltercircuitChapter3Exercise第1題Inthecircuitforlineardetectionoftemperature,usuallychoose()AmetalthermistorBsemiconductorthermistorCbothoftheabove第2題Whichthermistorhasbetterlinearity,PTC,CTRorNTC?()APTCBNTCCCTR第3題Spontaneouspolarizationisthattheferroelectricbodyaftertheremovaloftheappliedvoltage().ApolarizationintensitybecomeslargerBpolarizationintensitybecomessmallerCpolarizationintensitybecomeszeroDpolarizationintensityremainsunchanged第4題Whenthetemperatureincreases,thepolarizationstrengthofthethermoelectriccrystalwillchangeto().AbestrongerBbeweakerCremainthesame第5題Whenthetemperatureofthethermoelectriccrystalincreases,theadsorptionchargeneutralizationtimeT1iscomparedwiththepolarizationrelaxationtimeT2,andtherelationshipbetweenthemis(

)AT1ismuchlongerthanT2BT2ismuchlongerthanT1CT1isequaltoT2第6題Whentheexternalradiationcontinuesandthetemperatureofthepyroelectriccrystalremainsconstant,doesthepyroelectricsensorstillhaveanelectricalsignaloutput?()AYesBNoCNotsure第7題Whenthehumanpyroelectricsensorisworking,ifthemeasuredtargetisstationary,doesthesensorhaveelectricalsignaloutput?()AYesBNoCNotsure第8題Thehumanbodycanradiateinfraredwavesof()A4~8umB8~12umC12~16um第9題Fresnelfilter()thedetectiondistanceofinfraredpyroelectricsensor.AcanincreaseBcandecreaseCdoesnotaffect第10題BasedontheSeebeckeffect,ifthetemperaturedifferencebetweenthetwojunctionsofthethermocouplebecomeslarger,thethermoelectricpotentialinthecircuitwill(

)AbecomelargerBbecomesmallerCnotchange第11題Ifthematerialsofthetwoelectrodesofthethermocouplearethesame,whenthetemperaturedifferencebetweenthetwoendsbecomeslarge,thethermoelectricpotentialintheloopwill().AbecomelargerBbecomesmallerCnotchangeDbe0第12題Whendesigningathermostaticcontrolcircuit,whichtypeofthermistorisusuallyused?()APTCBNTCCCTR第13題Whenthesemiconductorradiationthermocouplereceivesexternalthermalradiation,thethermalcurrentinthecircuitisalways(

)

AfromPtoNBfromNtoP

Cis0Chapter4Exercise第1題InthesandwichstructureoftheCCD,whichonehasthefunctionofphotoelectricconversion?()AThefirstlayerofthemicrolensBThesecondlayerofthecolorseparationfilterCThethirdlayerofthephotosensitiveconfluencelayer第2題Whichofthefollowingstatementsistrueaboutthenumberofchargesintheanti-typelayerintheMOSstructure?()AItisproportionaltothegatebiasvoltageBItisproportionaltothelightintensityCItisproportionaltotemperature第3題ForCCD,underthepremisethatthegatevoltageisunchangedandtheinverselayerchargeiszero,thecorrespondingpotentialwellwillbecomeshallowerwhentheoxidelayerthicknessincreases（

）第4題InCCD,thechangeofchargequantityofinvertedlayerisproportionaltothechangeofexternallightintensity（

）第5題

InCCD,thedepthofthepotentialwellisadjustedbycontrollingthevoltageoftheadjacentMOSgate,andthetransferofsignalchargecanbeachievedbythismethod()第6題WhenwhitelightisincidentontheCCD,thechargequantityofthecorrespondingunitsofred,greenandbl

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