WaferFabricationProcessTechnologyCMOSContent0.5umCMOSprocessflow&crosssection0.18umCMOSprocessflow&crosssectionPCMintroductionCMOSStartingwithasiliconwaferCrossSectionoftheSiliconWaferMagnifyingtheCrossSectionCMOSn/p-wellFormationGrowThinOxideDepositNitrideDepositResistsiliconsubstrateUVExposureDevelopResistEtchNitriden-wellImplantRemoveResistCMOSn/p-wellFormationsiliconsubstrateGrowOxide(n-well)RemoveNitridep-wellImplantRemoveOxideTwin-wellDrive-inp-welln-wellRemoveDrive-InOxidesiliconsubstratep-welln-wellCMOSLOCOSIsolationGrowThinOxideDepositNitrideDepositResistUVExposureDevelopResistEtchNitrideRemoveResistCMOSLOCOSIsolationsiliconsubstratep-welln-wellDepositResistUVExposureDevelopResistFieldImplantBRemoveResistGrowFieldOxideFoxRemoveNitrideRemoveOxidesiliconsubstratep-welln-wellGrowScreenOxideCMOSTransistorFabricationVtImplantDepositResistUVExposureDevelopResistPunchthroughImplantRemoveResistRemoveOxideFoxsiliconsubstratep-welln-wellGrowGateOxideCMOSTransistorFabricationDepositPolySiPolySiImplantpolySipolySiDepositResistUVExposureDevelopResistEtchPolySiRemoveResistFoxsiliconsubstratep-welln-wellCMOSTransistorFabricationDepositThinOxideDepositResistUVExposureDevelopResistn-LDDImplantRemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp-LDDImplantRemoveResistDepositSpacerOxideEtchSpacerOxideFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistn+S/DImplantn+n+RemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp+S/DImplantp+p+RemoveResistFoxpolySipolySin+n+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositBPTEOSBPTEOSBPSGReflowPlanarizationEtchbackDepositResistUVExposureDevelopResistContactEtchbackRemoveResistFoxpolySipolySin+n+p+p+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepostMetal1Metal1DepositResistUVExposureDevelopResistEtchMetal1RemoveResistFoxpolySipolySip+p+n+n+BPTEOSsiliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositIMD1IMD1DepositSOGSOGPlanarizationEtchbackDepositResistUVExposureDevelopResistViaEtchRemoveResistFoxpolySipolySip+p+Metal1n+n+BPTEOSsiliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositMetal2Metal2Metal2DepositResistUVExposureDevelopResistEtchMetal2RemoveResistDepositPassivationFoxpolySipolySip+p+Metal1n+n+BPTEOSIMD1SOGPassivation0.18umProcessCrosssectionPadoxidePSubstrateODSiN0.18umProcessCrosssectionPSubstrate0.18umProcessCrosssectionPSubstratePwellmaskPwellNAPTVTNB11Pwell/NAPT/VTNImplantNwellmaskP31Nwell/P_APT/VTPImplantNwellPAPTVTP0.18umProcessCrosssectionPSubstratePwellNAPTVTNNwellNfieldPAPTMask132HFWetdipandGrowGateoxide-20.18umProcessCrosssectionPolyNLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyNLDDimplantNLDD114maskPLDD113maskPLDDimplant0.18umProcessCrosssectionPolyPLDDPLDDNLDDPSubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyPLDD197mask(3.3V&1.8V)P-pocket/PLDDimpNLDD116mask(3.3V)NLDD2-1As/NLDD2-2P31imp0.18umProcessCrosssectionPolyPSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDPSD197maskNSD198maskNSDimp0.18umProcessCrosssectionPolyPSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSD0.18umProcessCrosssectionPolyPSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxide0.18umProcessCrosssectionPolyiPSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxide0.18umProcessCrosssectionPolyPSubstratePwellNAPTNwellPAPTVTPPolyiPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideIMD-1WWWW0.18umProcessCrosssectionPolyPSubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideIMD-1WWWWMetal-1Metal-20.18umProcessCrosssectionMetal-1IMD-1A-SiPwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrenchoxideMetal-4IMD-4WWWIMD-5Metal-6IMD-3WWMetal-2IMD-2Metal_5WWWWWWWWPCMPCM就就是是ProcessControl&Monitor的的簡(jiǎn)簡(jiǎn)稱稱；；同時(shí)時(shí)，，PCM也也稱稱為為WAT：：WaferAcceptTest；；PCM--PurposePCM主要要把把線線上上一一些些工工藝藝異異常常進(jìn)進(jìn)行行及及時(shí)時(shí)的的反反映映，，在在產(chǎn)產(chǎn)品品入入庫(kù)庫(kù)前前對(duì)對(duì)其其進(jìn)進(jìn)行行最最后后一一道道質(zhì)質(zhì)量量的的檢檢驗(yàn)驗(yàn)，，其其作作用用歸歸納納起起來(lái)來(lái)，，主主要要有有如如下下幾幾點(diǎn)點(diǎn)：：（1））對(duì)產(chǎn)產(chǎn)品品進(jìn)進(jìn)行行參參數(shù)數(shù)質(zhì)質(zhì)量量檢檢驗(yàn)驗(yàn)；；（2））監(jiān)監(jiān)控控在在線線工工藝藝對(duì)對(duì)電電參參數(shù)數(shù)的的影影響響，，以以及及工工藝藝的的波波動(dòng)動(dòng)；；（3））判判定定WAFERPASS/FAIL的的一一個(gè)個(gè)重重要要依依據(jù)據(jù)，，客客戶戶會(huì)會(huì)根根據(jù)據(jù)PCM測(cè)測(cè)試試情情況況，，決決定定接接收收、、或或拒拒收收WAFER。。(4)YieldanalysisPCM––keyitems（1））Vt（2)BVD（3））Ion（4））Leakage（5））SheetRs（6））Rc（7））Capacitor(8)OthersPCM––TestLocationPCM—MOSTransistorPCM––VtmeasurePCM–BVDmaesurePCM–LeakagemeasurePCM––I-VcurvePCM––InterPolyCapacitorMETALPOLY2POLY1POLY2POLY1FOXP-SUBW(CapacitorWidth)L(CapacitorLength)CAPACITORCAPACITORPCM––PolyRsWLPSubstrateLWPSubstrateHighResistorlayerPoly1Metal1Poly1(LowRs)(HighRs)PolyResistorMarkinglayerPCM–NWRsP-SUBNWellMetalN+ContactNCOMP(N+implant)NwellLN+NwellResistorMarkingLayerPCM––N+RsP-SUBMetalContactNCOMP(N+implant)LN+N+ResistorMarkingLayerPCM––P+RsP-SUBMetalPCOMP(P+implant)NwellLP+NwellPCM––P+/NWPCOMP(P+implant)P-SUBNWellMetalP+N+ContactNCOMP(N+implant)NwellW1L1W2L2PCM––N+/PsubNCOMP(N+implant)P-SUBMetalN+P+ContactPCOMP(P+implant)NwellW1L1W2L2PCM--LPNPP+P+P+N+N+NWellP-SubMetalNCOMP(N+implant)NwellPCOMP(P+implant)LPNPMarkingLayerPCM--VPNPP+P+P+N+N+NWellP-SubMetalNwellNCOMP(N+implant)PCOMP(P+implant)Thanks!9、靜夜四無(wú)鄰鄰，荒居舊業(yè)業(yè)貧。。12月-2212月-22Wednesday,December7,202210、雨中中黃葉葉樹，，燈下下白頭頭人。。。21:51:0721:51:0721:5112/7/20229:51:07PM11、以我我獨(dú)沈沈久，，愧君君相見見頻。。。12月月-2221:51:0721:51Dec-2207-Dec-2212、故人江海海別，幾度度隔山川。。。21:51:0721:51:0721:51Wednesday,December7,202213、乍見翻疑疑夢(mèng)，相悲悲各問(wèn)年。。。12月-2212月-2221:51:0721:51:07December7,202214、他鄉(xiāng)生白發(fā)發(fā)，舊國(guó)見青青山。。07十二月月20229:51:07下午21:51:0712月-2215、比比不不了了得得就就不不比比，，得得不不到到的的就就不不要要。。。。。十二二月月229:51下下午午12月月-2221:51December7,202216、行行動(dòng)動(dòng)出出成成果果，，工工作作出出財(cái)財(cái)富富。。。。2022/12/721:51:0721:51:0707December202217、做做前前，，能能夠夠環(huán)環(huán)視視四四周周；；做做時(shí)時(shí)，，你你只只能能或或者者最最好好沿沿著著以以腳腳為為起起點(diǎn)點(diǎn)的的射射線線向向前前。。。。9:51:07下下午午9:51下下午午21:51:0712月月-229、沒(méi)有有失敗敗，只只有暫暫時(shí)停停止成成功！！。12月月-2212月月-22Wednesday,December7,202210、很多多事情情努力力了未未必有有結(jié)果果，但但是不不努力力卻什什么改改變也也沒(méi)有有。。。21:51:0721:51:0721:5112/7/20229:51:07PM11、成功就是是日復(fù)一日日那一點(diǎn)點(diǎn)點(diǎn)小小努力力的積累。。。12月-2221:51:0721:51Dec-2207-Dec-2212、世間成成事，不不求其絕絕對(duì)圓滿滿，留一一份不足足，可得得無(wú)限完完美。。。21:51:0721:51:0721:51Wednesday,December7,202213、不知香積積寺，數(shù)里里入云峰。。。12月-2212月-2221:51:0721:51:07December7,202214、意志堅(jiān)堅(jiān)強(qiáng)的人人能把世世界放在在手中像像泥塊一一樣任意意揉捏。。07十十二月20229:51:07下午午21:51:0712月-2215、楚塞三湘接接，荊門九派派通。。。十二月229:51下下午12月-2221:51December7,202216、少年十五二二十時(shí)，步行行奪得胡馬騎騎。。2022/12/721:51:0721:51:0707December202217、空山新雨后后，天氣晚來(lái)來(lái)秋。。9:51:07下午9:51下下午21:51:0712月-229、楊柳散和風(fēng)風(fēng)，青山澹吾吾慮。。12月-2212月-22Wednesday,December7,202210、閱讀一切好好書如同和過(guò)過(guò)去最杰出的的人談話。21:51:0721:51:0721:5112/7/20229:51:07PM11、越是沒(méi)