微專業(yè)---半導(dǎo)體制造技術(shù)課程：半導(dǎo)體工程專業(yè)英語ContentsSemiconductorProperties半導(dǎo)體特性01SemiconductorMaterials半導(dǎo)體材料02SemiconductorDeviceandHowTheyareUsed半導(dǎo)體器件及其使用03ProcessTechnology工藝技術(shù)04FabricationProcesses制造工藝05SemiconductorMaterialsandProcessCharacterization半導(dǎo)體材料與工藝表征06FabricationProcesses5.1PatternDefinitionSchemes5.2ProcessingStepsinTop-DownSequence5.3SurfaceProcessing5.4AdditiveProcesses5.5Lithography5.6SubtractiveProcesses5.7SelectiveDoping5.8ProcessingofContactsandInterconnects5.9AssemblyandPackaging056Introduction

Insemiconductorterminologyterms“contacts”and“interconnects”areused

inreferencetohighelectricallyconductivematerialsneededtotakethecurrentinandoutofthedevice.Inthecaseofanintegratedcircuitinterconnectsservethepurposeofprovidingelectricalconnectionbetweendevicesin

thecircuit.Theaslowaspossibleresistivityisapredominantrequirement

concerningpropertiesofmaterialsusedtoprocesscontactandinterconnects

insemiconductordevicemanufacturing.5.8ProcessingofContactsandInterconnects/pr??dɑ?m?n?nt/占主導(dǎo)地位的5FabricationProcesses7Introduction

AsindicatedearlierinthisGuide,semiconductormanufacturingprocedures,particularlyinthecaseofthemanufactureofadvanceddevicessuchas

complexintegratedcircuits,aredividedintotwopartsreferredtoasFront

End-Of-theLine,orFEOLprocesses,andBack-End-Of-theLine,orBEOL

processes.AnoperationformingthefirstmetalcontactonthewafersurfaceisconsideredtobeastepcompletingtheFEOLpartoftheprocess,

whilebeingatthesametimethefirststepinitsBEOLportionoftheprocess.Processingofinterconnectlinesintheintegratedcircuitsfallssquarely

intoBEOLpartofthemanufacturingsequenceandissubjecttosomewhat

differentrequirementscomparingtocontactsformationprocedures./ski?m/有……傾向的5.8ProcessingofContactsandInterconnects5FabricationProcesses/?skwerli/直接地8

AsitshouldbeapparentfromthediscussioninthisGuide,nosemiconductor

devicecanfunctionbasedsolelyonthecurrent,orvoltagecontrollinginteractionswithinsemiconductormaterial.Everysemiconductordevice,withno

exception,needstobeequippedwithohmiccontactsassuringundisturbed

flowofcurrentinandoutofthedevice.Aslowaspossibleresistivityofthe

contactmaterialisrequiredtoassurenegligibleseriesresistanceintroduced

intothecurrentflowpath./?neɡl?d??b(?)l/微不足道的5.8ProcessingofContactsandInterconnects/?k?sep?n/例外/?so?lli/單獨地5FabricationProcesses/??nd??st??rbd/不受干擾的5.8.1ContactsText95.8ProcessingofContactsandInterconnects5FabricationProcesses5.8.1Contacts(a)Intimatecontactbetweenmetalandsemiconductoris(b)disturbed

bythespontaneouslyformedresidue/oxidefilm./??nt?m?t/緊密的/?rez?du?/殘留物/spɑ?n?te?ni?sli/自發(fā)的10

Non-transparentcontactsareprimarilymetals,forinstancealuminum

(Al)andgold(Au),ormetalalloyssuchastitanium

nitride(TiN),orsilicidesdiscussedearlier.Thechoicewithregardtothedepositiontechnique

employedistypicallybetweenPVDmethodofsputteringandtheoneofthe

CVDmethodsamongwhichAtomicLayerDeposition(ALD)

isusedinthecaseofparticularlydemandingmetaldeposition

steps./d??m?nd??/需求5.8ProcessingofContactsandInterconnects/?ta??te?ni?m/鈦/??lu?m?n?m/鋁5FabricationProcesses5.8.1Contacts/?na?tra?d/氮化物11

Transparentcontacts.Asthenameindicates,transparentcontactsneed

tobeelectricallyconductiveandopticallytransparent.Theyareoftenused

asbackcontactsinlightemittingdevices.Typically,theybelongtothe

broadfamilyofTransparentConductiveOxides(TCO).5.8ProcessingofContactsandInterconnects5FabricationProcesses5.8.1Contacts12

Asthenameindicates,thepurposeofinterconnectsistoconnectindividual

devicessuchastransistorsprocessedintothesemiconductorchiptoform

anelectroniccircuit.Interconnectlinesareintheformoftheproperly

patternedthin-filmelectricalconductors,mostcommonlymetals.5.8ProcessingofContactsandInterconnects5FabricationProcesses5.8.2InterconnectsText13Multilevelmetallization.

Tofacilitateexplanationofthekeyconceptspertainingtothemultilevel

metallizationtechnology,Fig

inthesimplifiedfashionidentifieskey

elementsofthemultilevelmetallizationsystemusedinadvancedICs.Its

threeelementsincludemetallines,interleveldielectric(ILD),andvias,also

referredtoasplugs./met?la??ze???n/金屬化5.8ProcessingofContactsandInterconnects5FabricationProcesses5.8.2InterconnectsMultilayer/multimaterialICinterconnectsystem./f??s?l?te?t/使便利/p???te?n??/有關(guān)的/?va??/通孔/pl?ɡ/栓塞層間/?t??st?n/鎢14Multilevelmetallization.

Processingofmultilevelmetallizationsystemsisattheverycoreofthe

BEOLpartoftheICmanufacturingsequenceandfeaturesstringentrequirementsregardingperformanceofmaterialsandprocesses.Considering

theformer,thekeyelementisconcernedwiththeselectionofmetalusedtoforminterconnectlines.AsmentionearlierinthisGuidethemetalofchoiceinthisapplicationiscopper(Cu).Itfeaturesveryhighelectricalconductivityandwhatisimportantininterconnecttechnology,itisfreefromtheeffectofelectromigrationplaguingsomeotherhighlyconductivemetals,mostnotably

aluminum.Anothermetalusedintheprocessingofmultilevelmetallizationistungsten(W)commonlyemployedtoformvias(plugs)./?no?t?bli/明顯的5.8ProcessingofContactsandInterconnects5FabricationProcesses5.8.2Interconnects/?t??st?n/鎢/?ple?ɡ??

/困擾/??lu?m?n?m/鋁/?str?nd??nt/嚴(yán)格的/si?kw?ns/順序15

Thespecificrequirementsandneedsofthemultilayerinterconnectprocessing

arebestaccomplishedwhenpatterning,deposition,andchemical-mechanical

planarization(CMP)stepsareintegratedintowhatisknownasadamasceneprocess.