2025年第二屆玻璃基板TGV暨板級(jí)封裝產(chǎn)業(yè)高峰論壇:Development of TGV Substrates for Glass Cor_第1頁
2025年第二屆玻璃基板TGV暨板級(jí)封裝產(chǎn)業(yè)高峰論壇:Development of TGV Substrates for Glass Cor_第2頁
2025年第二屆玻璃基板TGV暨板級(jí)封裝產(chǎn)業(yè)高峰論壇:Development of TGV Substrates for Glass Cor_第3頁
2025年第二屆玻璃基板TGV暨板級(jí)封裝產(chǎn)業(yè)高峰論壇:Development of TGV Substrates for Glass Cor_第4頁
2025年第二屆玻璃基板TGV暨板級(jí)封裝產(chǎn)業(yè)高峰論壇:Development of TGV Substrates for Glass Cor_第5頁
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DevelopmentofTGV

SubstratesforGlass

Core〇Feng

Tsai,AtsukiSaito2025

Aug.26-27,Shenzhen,The2ndGlassSubstrate

TGVIndustryChainSummitForum

NipponElectricglass

Co.,Ltd.?Ni

on

ElectricGlassCo.,

Ltd.,?

NEG

solution

for

in-organic

core

materials-GC

core-Glass

core?

Evaluation

related

to

Build-up

process-Metallization-Se-Wa-Re

issues?

Summary?

Introduction

of

NEG-Company

profile-Product-Manufacturingtechnology?Ni

on

ElectricGlassCo.,

Ltd.Contents2?

NEG

solution

for

in-organic

core

materials-GC

core-Glass

core?

Evaluation

related

to

Build-up

process-Metallization-Se-Wa-Re

issues?

Summary?

Introduction

of

NEG-Company

profile-Product-Manufacturingtechnology?Ni

on

ElectricGlassCo.,

Ltd.Contents3

LowCTE

/

highmodulus→Reduce

warpagein

Largesubstrate

Dimensionalstability

Highthroughhole

density

LowLoss

HigherTemperature

capabilityIntelannouncedthatitaimstocommercializeglasscoresubstratesby2030Glasseswith

TGV

arerequired!Source:https://www.anandtech.com/show/20058/intel-shows-off-

glass-core-substrate-plans-deployment-late-decadeSpotlighttoglassesforcoresubstratematerial?Ni

on

ElectricGlassCo.,

Ltd.4MaterialGC

CoreTM

(LTCC)Glass

CoreViaformingCO2

LaserLasermodification

+

EtchingCO2

LaserFeatures

Hightact

drilling

LowDk

Small/highdensityvia

Cleansurface

Hightact

drilling

Lowinitial

costWearedevelopingmultiplematerialsand

drilling

methodsNEGstrategiesforin-organiccoredevelopment?Ni

on

ElectricGlassCo.,

Ltd.5GCcoreTM

canachievelowDk/Df.Wesuccessmakinglargesubstrates(510-515mm)asaprototype.Nowweareworking

on

qualityimprovement.CTE(ppm/℃)6.

1Dk

at2.45GHz3.9Dfat2.45GHz0.0013?Nippon

ElectricGlassCo.,

Ltd.Example

properties

of

GC

coreTMGC

CoreTMTopCrosssection6Wearedevelopingtwotype

ofTGV

forming

technology?Nippon

ElectricGlassCo.,

Ltd.Small

/

Highdensityvia

CleansurfacebyetchingTGV

by

CO2

Laser(Underdevelopment)TGV

byLasermodification

+EtchingFast

TGV

formation

Lowinitial

costsGlass

CoreCrosssectionCrosssection7CTE[ppm/℃]

(20

~260℃)2.83.53.65.26.78.49.8Dk(1GHz)4.85.64.65.46.57.07.4Df

(1GHz)0.0020.0030.0060.010.010.010.01Glass

typeNon-Alkaline

glassAlkaline-glassWehave

Wide-CTE

glasslineupforcoresubstrates.CTEof

theglassisinthe

range

of

3~

10ppm.LowDk/DFcanbeachievedinthe

low

CTErangeLow

CTE

High?Ni

on

ElectricGlassCo.,

Ltd.Glass

lineup81)Laser

modificationIrradiatewithanultrashort

pulselaserat

the

holeposition.2)EtchingEtchingtheglassbywetsolution.Themodifiedregionisselectivelyetched.<

Crosssection>

modifiedregionProcessof

Laermodification

+EtchingItisimportanttounderstandoptimalconditionsforeachglasscomposition.

?Nippon

ElectricGlassCo.,

Ltd.LasermodificationDuringetchingAfteretchingBareglassCTE3.53.65.26.7TGVimag(CrosssectiGlassthickness400

μmHolediameterΦ50μmTaperangle4

。122Aspectratio8?

Wecan

achieve

straighthole

shape

in

several

CTErange.?

TGV

shapecould

be

controlledbyetching

conditions?Ni

on

ElectricGlassCo.,

Ltd.TGV

examples10。。。?

NEG

solution

for

in-organic

core

materials-GC

core-Glass

core?

Evaluation

related

to

Build-up

process-Metallization-Se-Wa-Re

issues?

Summary?

Introduction

of

NEG-Company

profile-Product-Manufacturingtechnology?Ni

on

ElectricGlassCo.,

Ltd.Contents11PeelstrengthtestCTE

CTE

CTE

CTE3.5ppm

3.6ppm5.2ppm8.9ppmProcess1.Seedlayerdeposition2.Electroless

Cuplating3.Electrolytic

CuplatingTarget

Value>4~6N/cm※

EvaluationareconductedbycollaboratorSufficient

peel

strength

can

be

obtained

for

wide

range

of

glasses.Metallizationproperties?Ni

on

ElectricGlassCo.,

Ltd.12?

Se-Wa-Reisoneof

themajorchallengesfor

glass

core

application?

Tensilestress

occurs

because

of

CTEmismatchbetweeninsulationfilmandcorematerialsTensilestressTensilestressInsulationFilm

CTE

~20ppmGlassCTE3

~

10ppm?Ni

on

ElectricGlassCo.,

Ltd.Crack

propagatefromthe

flawsmadebydicingbladeSe-Wa-Re

issuesMcCann

et

al.(IEEE2015)CutbyDicingblade13ChallengesHigherCTEleadsto

themismatch

betweensubstrateandSi

chips.LowCTEinsulatingfilmsoffera

one

of

thepromisingsolutionto

this

issue.Wesimulatedinternaltensilestressacross

variousglass

CTEs.HigherCTEorthicker

glasssubstrateshelpreducestresslevelsSimulationresultsof

internaltensilestressCondition

of

simulation

Tensile

Stress

Profile

in

the

Thickness

Direction(0.4mmt)?Nippon

ElectricGlassCo.,

Ltd.Maximumtensilestressover

glassCTE0

1020

3040

50Tensilestress

(MPa)High

CTELowCTE0

CTE

(5ppm)

100.20.

10-0.1-0.235302520Maxtensilestress14Distance

(mm)0.4

t1.0

t4540(MPa)15?

NEG

solution

for

in-organic

core

materials-GC

core-Glass

core?

Evaluation

related

to

Build-up

process-Metallization-Se-Wa-Re

issues?

Summary?

Introduction

of

NEG-Company

profile-Product-Manufacturingtechnology?Ni

on

ElectricGlassCo.,

Ltd.Contents15Compositional

designTGV

processdevelopmentManufacturingtechnologyThroughglass,NEGremainscommittedtoadvancingthesemiconductorindustry.?Ni

on

ElectricGlassCo.,

Ltd.Summary16?

NEG

solution

for

in-organic

core

materials-GC

core-Glass

core?

Evaluation

related

to

Build-up

process-Metallization-Se-Wa-Re

issues?

Summary?

Introduction

of

NEG-Company

profile-Product-Manufacturingtechnology?Ni

on

ElectricGlassCo.,

Ltd.Contents17?Ni

on

ElectricGlassCo.,

Ltd.NEG

GlobalNetwork18GlasscarrierZero

CTEGlassWehavealotof

experienceinsemi-conductorfieldNEGProductforSemi-conductorfield?Ni

on

ElectricGlassCo.,

Ltd.LTCCSubstratePowderGlass19We

h

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