1、,PowerElectronics,Chapter2PowerElectronicDevices,Outline,2.1Anintroductoryoverviewofpowerelectronicdevices2.2Uncontrolleddevicepowerdiode2.3Half-controlleddevicethyristor2.4Typicalfully-controlleddevices2.5Othernewpowerelectronicdevices2.6Powerintegratedcircuitsandintegratedpowerelectronicsmodules,T

2、heconceptandfeaturesConfigurationofsystemsusingpowerelectronicdevicesClassificationsMajortopics,2.1Anintroductoryoverviewofpowerelectronicdevices,Powerelectronicdevices:InbroadsenseVeryoften:MajormaterialusedinpowersemiconductordevicesSilicon,aretheelectronicdevicesthatcanbedirectlyusedinthepowerpro

3、cessingcircuitstoconvertorcontrolelectricpower.,Theconceptofpowerelectronicdevices,Powerelectronicdevices=Powersemiconductordevices,Featuresofpowerelectronicdevices,Theelectricpowerthatpowerelectronicdevicedealswithisusuallymuchlargerthanthattheinformationelectronicdevicedoes.Usuallyworkinginswitchi

4、ngstatestoreducepowerlosses,Featuresofpowerelectronicdevices,Needtobecontrolledbyinformationelectroniccircuits.Veryoften,drivecircuitsarenecessarytointerfacebetweeninformationcircuitsandpowercircuits.Dissipatedpowerlossusuallylargerthaninformationelectronicdevicesspecialpackagingandheatsinkarenecess

5、ary.,Powerlossesonpowersemiconductordevices,Configurationofsystemsusingpowerelectronicdevices,Powerelectronicsystem:,Protectioncircuitisalsoveryoftenusedinpowerelectronicsystemespeciallyfortheexpensivepowersemiconductors.,Terminalsofapowerelectronicdevice,Thecontrolsignalfromdrivecircuitmustbeconnec

6、tedbetweenthecontrolterminalandafixedpowercircuitterminal(thereforecalledcommonterminal).,Aclassificationofpowerelectronicdevices,Uncontrolleddevice:diode(Uncontrollabledevice),Fully-controlleddevice:PowerMOSFET,IGBT,GTO,IGCT(Fully-controllabledevice),Half-controlleddevice:thyristor(Half-controllabl

7、edevice),hasonlytwoterminalsandcannotbecontrolledbycontrolsignal.Theonandoffstatesofthedevicearedeterminedbythepowercircuit.,isturned-onbyacontrolsignalandturned-offbythepowercircuit,Theonandoffstatesofthedevicearecontrolledbycontrolsignals.,Otherclassifications,powerelectronicdevices,powerelectroni

8、cdevices,powerelectronicdevices,Appearance,structure,andsymbolPhysicsofoperationCharacteristicsSpecificationSpecialissuesDevicesofthesamefamily,Majortopicsforeachdevice,Switchingcharacteristics(Dynamiccharacteristics),Staticcharacteristics,Passivecomponentsinpowerelectroniccircuit,Transformer,induct

9、or,capacitorandresistorThesearecalledpassivecomponentsinapowerelectroniccircuitsincetheycannotbecontrolledbycontrolsignalandtheircharacteristicsareusuallyconstantandlinear.Therequirementsforthesepassivecomponentsbypowerelectroniccircuitscouldbeverydifferentfromthosebyordinarycircuits.,2.2Uncontrolle

10、ddevicePowerdiode,Appearance,Structure,Symbol,Cathode,Anode,K,A,Anode,Cathode,PNjunction,Spacechargeregion(depletionregion,potentialbarrierregion),Semiconductor(ColumnIVelement,Si)ElectronsandholesPuresemiconductor(intrinsicsemiconductor)Doping,P-typesemiconductor.N-typesemiconductorPNjunctionEquili

11、briumofdiffusionanddrift,PNjunctionwithvoltageappliedintheforwarddirection,PNjunctionwithvoltageappliedinthereversedirection,Constructionofapracticalpowerdiode,Featuresdifferentfromlow-power(informationelectronic)diodesLargersizeVerticallyorientedstructurendriftregion(p-i-ndiode)Conductivitymodulati

12、on,250m,Breakdownvoltagedependent,10m,-,Forward-biasedpowerdiode,Reverse-biasedpowerdiode,BreakdownAvalanchebreakdownThermalbreakdown,Thepositiveandnegativechargeinthedepletionregionisvariablewiththechangingofexternalvoltage.JunctioncapacitorCJ.JunctioncapacitorCJJunctioncapacitorinfluencestheswitch

13、ingcharacteristicsofpowerdiode.,Junctioncapacitor,Staticcharacteristicsofpowerdiode,TheI-Vcharacteristicsofpowerdiode,Switching(dynamic)characteristicsofpowerdiode,Reverse-recoveryprocess:Reverse-recoverytime,reverse-recoverycharge,reverse-recoverypeakcurrent.,Turn-offtransient,Switching(dynamic)cha

14、racteristicsofpowerdiode,Forwardrecoveryprocess:forward-recoverytime,Turn-ontransient,Specificationsofpowerdiode,AveragerectifiedforwardcurrentIF(AV)ForwardvoltageUFPeakrepetitivereversevoltageURRMMaximumjunctiontemperatureTJMReverse-recoverytimetrr,Typesofpowerdiodes,Generalpurposediode(rectifierdi

15、ode):FastrecoverydiodeSchottkydiode(Schottkybarrierdiode-SBD),standardrecovery,Reverserecoverytimeandchargespecified.trrisusuallylessthan1s,formanylessthan100nsultra-fastrecoverydiode.,AmajoritycarrierdeviceEssentiallynorecoveredcharge,andlowerforwardvoltage.Restrictedtolowreversevoltageandblockingc

16、apability(lessthan200V),Examplesofcommercialpowerdiodes,Historyandapplicationsofpowerdiode,Appliedinindustriesstarting1950sStillin-usetoday.UsuallyworkingwithcontrolleddevicesasnecessarycomponentsInmanycircumstancesfastrecoverydiodesorschottkydiodeshavetobeusedinsteadofgeneralpurposediodes.,2.3Half-

17、controlleddeviceThyristor,Anothername:SCRsiliconcontrolledrectifierThyristorOpenedthepowerelectronicsera1956,invention,BellLaboratories1957,developmentofthe1stproduct,GE1958,1stcommercializedproduct,GEThyristorreplacedvacuumdevicesinalmosteverypowerprocessingarea.Stillinuseinveryhighpowersituation.T

18、hyristorstillhasthehighestpower-handlingcapability.,History,Appearanceandsymbolofthyristor,Symbol,Appearance,Structureandequivalentcircuitofthyristor,Structure,Equivalentcircuit,Physicsofthyristoroperation,Equivalentcircuit:Apnptransistorandannpntransistorinterconnectedtogether.PositivefeedbackTrigg

19、erCannotbeturnedoffbycontrolsignalHalf-controllable,Quantitativedescriptionofthyristoroperation,Ic1=1IA+ICBO1（2-1）Ic2=2IK+ICBO2（2-2）IK=IA+IG（2-3）IA=Ic1+Ic2（2-4）,（2-5）,WhenIG=0,a1+a2issmall.WhenIG0,a1+a2willapproach1,andIAwillbeverylarge.,Othermethodstotriggerthyristor,Highvoltageacrossanodeandcathod

20、eavalanchebreakdownHighrisingrateofanodevoltagedu/dttoohighHighjunctiontemperatureLightactivation,Staticcharacteristicsofthyristor,Blockingwhenreversebiased,nomatterifthereisgatecurrentappliedConductingonlywhenforwardbiasedandthereistriggeringcurrentappliedtothegateOncetriggeredon,willbelatchedoncon

21、ductingevenwhenthegatecurrentisnolongerappliedTurningoff:decreasingcurrenttobenearzerowiththeeffectofexternalpowercircuitGateI-Vcharacteristics,Switchingcharacteristicsofthyristor,Turn-ontransientDelaytimetdRisetimetrTurn-ontimetgtTurn-offtransientReverserecoverytimetrrForwardrecoverytimetgrTurn-off

22、timetq,Specificationsofthyristor,PeakrepetitiveforwardblockingvoltageUDRMPeakrepetitivereverseblockingvoltageURRMPeakon-statevoltageUTMAverageon-statecurrentIT(AV)HoldingcurrentIHLatchingupcurrentILPeakforwardsurgecurrentITSMdu/dtdi/dt,Thefamilyofthyristors,FastswitchingthyristorFSTTriodeACswitchTRI

23、AC(Bi-directionaltriodethyristor),Reverse-conductingthyristorLight-triggered(activited)thyristorRCTLTT,2.4Typicalfully-controlleddevices,2.4.1Gate-turn-offthyristorGTO2.4.2GianttransistorGTR2.4.3Powermetal-oxide-semiconductorfieldeffecttransistorPowerMOSFET2.4.4Insulated-gatebipolartransistorIGBT,Fe

24、atures,Begintobeusedinlargeamountin1980sGTRisobsoleteandGTOisalsoseldomusedtoday.IGBTandpowerMOSFETarethetwomajorpowersemiconductordevicesnowadays.,Applications,ICfabricationtechnology,fully-controllable,highfrequency,2.4.1Gate-turn-offthyristorGTO,Majordifferencefromconventionalthyristor:Thegateand

25、cathodestructuresarehighlyintegrated,withvarioustypesofgeometricformsbeingusedtolayoutthegatesandcathodes.,Structure,Symbol,PhysicsofGTOoperation,ThebasicoperationofGTOisthesameasthatoftheconventionalthyristor.Theprincipaldifferenceslieinthemodificationsinthestructuretoachievegateturn-offcapability.

26、Largea2a1+a2isjustalittlelargerthanthecriticalvalue1.Shortdistancefromgatetocathodemakesitpossibletodrivecurrentoutofgate.,CharacteristicsofGTO,StaticcharacteristicsIdenticaltoconventionalthyristorintheforwarddirectionRatherlowreversebreakdownvoltage(20-30V)Switchingcharacteristics,SpecificationsofG

27、TO,MostGTOspecificationshavethesamemeaningsasthoseofconventionalthyristor.SpecificationsdifferentfromthyristorsMaximumcontrollableanodecurrentIATOCurrentturn-offgainoffTurn-ontimetonTurn-offtimetoff,2.4.2GiantTransistorGTR,GTRisactuallythebipolarjunctiontransistorthatcanhandlehighvoltageandlargecurr

28、ent.SoGTRisalsocalledpowerBJT,orjustBJT.,Basicstructure,Symbol,StructureofGTRdifferentfromitsinformation-processingcounterpart,Multiple-emitterstructure,Darlingtonconfiguration,PhysicsofGTRoperation,SameasinformationBJTdevice,StaticcharacteristicsofGTR,cut-offregion,Amplifying,(active)region,O,I,i,b

29、3,i,b2,i,b1,i,b1,i,b2,i,b3,U,ce,Saturationregion,SwitchingcharacteristicsofGTR,Turn-ontransientTurn-ondelaytimetdRisetimetrTurn-ontimetonTurn-offtransientStoragetimetsFallingtimetfTurn-offtimetoff,SecondbreakdownofGTR,Safeoperatingarea(SOA)ofGTR,2.4.3Powermetal-oxide-semiconductorfieldeffecttransist

30、orPowerMOSFET,Basicstructure,Symbol,Aclassification,StructuresofpowerMOSFET,VerticalstructureVMOSVVMOS,VDMOSMultipleparallelcellsPolygon-shapedcells,Astructureofhexagoncells,PhysicsofMOSFEToperation,p-n-junctionisreverse-biasedoff-statevoltageappearsacrossn-region,Off-state,PhysicsofMOSFEToperation,

31、p-n-junctionisslightlyreversebiasedpositivegatevoltageinducesconductingchanneldraincurrentflowsthroughn-regionandconductingchannelonresistance=totalresistancesofn-region,conductingchannel,sourceanddraincontacts,etc.,On-state,StaticcharacteristicsofpowerMOSFET,SwitchingcharacteristicsofpowerMOSFET,Tu

32、rn-ontransientTurn-ondelaytimetd(on)CurrentrisingtimetriVoltagefallingtimetfv,Turn-offtransientTurn-offdelaytimetd(off)VoltagerisingtimetrvCurrentfallingtimetfi,MillercapacitanceandMillerplateau,Waveformdetailsandlengthoftimeintervalswillbedependentonthepowercircuittopology,control,snubbercircuitand

33、theparasiticofthepowercircuit.,SpecificationsofpowerMOSFET,Drain-sourcebreakdownvoltageUDSContinuousdraincurrentIDPeakpulseddraincurrentIDMOn(On-state)resistanceRDS(on)Inter-terminalcapacitancesShortcircuitinputcapacitanceCiss=CGS+CGDReversetransfercapacitanceCrss=CGDShortcircuitoutputcapacitanceCos

34、s=CDS+CGDSOAofpowerMOSFETNosecondbreakdown,ExamplesofcommercialpowerMOSFET,FeaturesandapplicationsofpowerMOSFET,Voltage-drivendevice,simpledrivecircuitMajority-carrierdevice,fastswitchingspeed,highoperatingfrequency(couldbehundredsofkHz)Majority-carrierdevice,betterthermalstabilityOn-resistanceincre

35、asesrapidlywithratedblockingvoltageUsuallyusedatvoltageslessthan600Vandpowerlessthan10kW1000Vdevicesareavailable,butareusefulonlyatlowpowerlevels(100W)Partnumberisselectedonthebasisofon-resistanceratherthancurrentrating,ThebodydiodeofpowerMOSFET,Thebodydiode,Equivalentcircuit,2.4.4Insulated-gatebipo

36、lartransistorIGBT,FeaturesOn-statelossesaremuchsmallerthanthoseofapowerMOSFET,andarecomparablewiththoseofaGTREasytodrivesimilartopowerMOSFETFasterthanGTR,butslowerthanpowerMOSFETApplicationThedeviceofchoicein500-4500Vapplications,atpowerlevelsofseveralkWtoseveralMW,CombinationofMOSFETandGTR,GTR:lowc

37、onductionlosses(especiallyatlargerblockingvoltages),longerswitchingtimes,current-driven,MOSFET:fasterswitchingspeed,easytodrive(voltage-driven),largerconductionlosses(especiallyforhigherblockingvoltages),IGBT,StructureandoperationprincipleofIGBT,Basicstructure,MultiplecellstructureBasicstructuresimi

38、lartopowerMOSFET,exceptextrapregionOn-state:minoritycarriersareinjectedintodriftregion,leadingtoconductivitymodulationcomparedwithpowerMOSFET:slowerswitchingtimes,loweron-resistanceusefulathighervoltages(upto4500V),EquivalentcircuitandcircuitsymbolofIGBT,Equivalentcircuit,Circuitsymbol,Staticcharact

39、eristicsofIGBT,SwitchingcharacteristicsofIGBT,IGBTturn-onissimilartopowerMOSFETturn-onThemajordifferencebetweenIGBTturn-offandpowerMOSFETturn-off:ThereiscurrenttailingintheIGBTturn-offduetothestoredchargeinthedriftregion.,Parasiticthyristorandlatch-upinIGBT,Maincurrentpathpnptransistorandtheparasiti

40、cnpntransistorcomposeaparasiticthyristorinsideIGBT.Highemittercurrenttendstolatchtheparasiticthyristoron.ModernIGBTsareessentiallylatch-upproof,Locationofequivalentdevices,CompleteIGBTequivalentcircuit,SpecificationsofIGBT,Collector-emitterbreakdownvoltageUCESContinuouscollectorcurrentICPeakpulsedco

41、llectorcurrentICMMaximumpowerdissipationPCMOtherissues:SOAofIGBTTheIGBThasarectangularSOAwithsimilarshapetothepowerMOSFET.Usuallyfabricatedwithananti-parallelfastdiode,ExamplesofcommercialIGBT,2.5Othernewpowerelectronicdevices,StaticinductiontransistorSITStaticinductionthyristorSITHMOScontrolledthyr

42、istorMCTIntegratedgate-commutatedthyristorIGCTPowerelectronicdevicesbasedonwidebandgapsemiconductormaterial,StaticinductiontransistorSIT,Anothername:powerjunctionfieldeffecttransistorpowerJFETFeaturesMajority-carrierdeviceFastswitching,comparabletopowerMOSFETHigherpower-handlingcapabilitythanpowerMO

43、SFETHigherconductionlossesthanpowerMOSFETNormally-ondevice,notconvenient(couldbemadenormally-offbutwithevenhigheron-statelosses),StaticinductionthyristorSITH,othernamesFieldcontrolledthyristorFCTFieldcontrolleddiodeFeaturesMinority-carrierdevice,aJFETstructurewithanadditionalinjectinglayerPower-hand

44、lingcapabilitysimilartoGTOFasterswitchingspeedsthanGTONormally-ondevice,notconvenient(couldbemadenormally-offbutwithevenhigheron-statelosses),MOScontrolledthyristorMCT,EssentiallyaGTOwithintegratedMOS-drivengatescontrollingbothturn-onandturn-offthatpotentiallywillsignificantlysimplifythedesignofcirc

45、uitsusingGTO.ThedifficultyishowtodesignaMCTthatcanbeturnedonandturnedoffequallywell.Oncebelievedasthemostpromisingdevice,butstillnotcommercializedinalargescale.Thefutureremainsuncertain.,Integratedgate-commutatedthyristorIGCT,Introducedin1997byABBActuallytheclosepackagingofGTOandthegatedrivecircuitw

46、ithmultipleMOSFETsinparallelprovidingthegatecurrentsShortname:GCTConductiondrop,gatedriverloss,andswitchingspeedaresuperiortoGTOCompetingwithIGBTandothernewdevicestoreplaceGTO,Powerelectronicdevicesbasedonwideband-gapsemiconductormaterial,EnergybandandbandgapEnergylevelsofanindependentatom(left)ande

47、nergybandsofanatominacrystalstructure,Propertiesofsemiconductormaterialswithpotentialforpowerdevices,PhysicalPropertiesofSiliconCarbide,WaferProduction,InfineonSiCoverview,UnipolardevicesExistingproducts:Diodebased:300V1200V(1700Vcanberealizedondemand)Underdevelopment:JFETbased:600V1500V(discrete,ca

48、scodesinmodules)Expansiontohighervoltageclasses(singlechip/super-cascode)possibleBipolardevicesNodevelopmentactivitiesatIFXSolidvolumeforecastsandcosttargetsrequired,GaNanddiamond,GaNhasmuchmorepotentialthanSiCtoachievehigherswitchingfrequency.ManufacturingofsinglecrystalGaNmaterialisstillunsolved.B

49、utfabricationtechniquesofGaNdevicesbasedonsubstratesofothercrystalmaterialhavemajorbreakenoughinrecentyears.CommercializedGaNSBDhasbeenavailablesince2007andGaNMOSFEThasbeenreportedfrequentlybyrecenttechnicalpapers.Diamondisthematerialwiththegreatestpotentialforpowerdevices.Thestateofdiamonddevicetec

50、hnologyisprimitivecomparedtothatofSiCandGaN.Themethodoffabricatingsinglecrystalwaferandthetechniquefordoingselectivediffusionofimpuritiesandselectiveetchingarestillmajorobstacles.,2.6Powerintegratedcircuitandpowermodule,Integrationofpowerelectronicdevices,Monolithicintegration:powerintegratedcircuit

51、,Packagingintegration:powermodule,Smartpowerintegratedcircuit(SmartpowerIC,SPIC,Smartswitch),Highvoltageintegratedcircuit(HVIC),Ordinarypowermodule:justpowerdevicespackagedtogether,IntegratedpowerelectronicsModule(IPEM):powerdevices,drivecircuit,protectioncircuit,controlcircuit,Intelligentpowermodule(IPM):powerdevices,drivecircuit,protectioncircui