微專業(yè)---半導(dǎo)體制造技術(shù)課程：半導(dǎo)體工程專業(yè)英語ContentsSemiconductorProperties半導(dǎo)體特性01SemiconductorMaterials半導(dǎo)體材料02SemiconductorDeviceandHowTheyareUsed半導(dǎo)體器件及其使用03ProcessTechnology工藝技術(shù)04FabricationProcesses制造工藝05SemiconductorMaterialsandProcessCharacterization半導(dǎo)體材料與工藝表征06SemiconductorDevicesandHowTheyAreUsed3.1SemiconductorDevices3.2ConstructingSemiconductorDevice3.3Two-TerminalDevices:Diodes3.4ThreeTerminalDevices:Transistors3.5IntegratedCircuits3.6ImageDisplayingandImageSensingDevices3.7Micro-Electro-MechanicalSystems(MEMS)andSensors3.8WearableandImplantableSemiconductorDeviceSystems0317Introduction

Thetransistorisadevicefeaturingthreeterminalsandactingasafunctional

extensionofthetwo-terminaldiodebyallowingsignalamplificationand

efficienton-offswitching.Thissectionreviewsoperationofthetransistorin

generaltermsandidentifieskeyclassesoftransistors./??mpl?f??ke??n/放大3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors18

Asstatedearlier,inordertocontrolthecurrentofanysemiconductor

device,eitherthenumberofchargecarriersmovingacrosstheregionof

devicefeaturedbytheconstantresistancehastobechanged,ortheresistanceofsuchregionhastobechanged.Thesetwoconceptsareunderlying

thedevelopmentoftwodifferentclassesoftransistors.Thefirstisconcerned

withthebipolartransistor,alsoknownasabipolarjunctiontransistor,BJT,

comprisedoftwop-njunctionswherebothmajorityandminoritychargecarrierscontributetothetransistoractionjustifyingitsbipolardenomination.

Thesecondoneincludesaclassoffield-effecttransistors,FET,operationon

whichiscontrolledbymajoritycarriersonly,andhence,arereferredtoas

unipolartransistors./??nd?r?la???/基礎(chǔ)3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.1

TransistoractionText/m??d???r?ti/大多數(shù)/ma??n??r?ti/少數(shù)/?d??st?fa???/證明合理/d??nɑ?m??ne??(?)n/名稱/?j?n??pol?r/單極的19

In

thecaseofBJTinitsfundamentalversion,itmeansthatthecurrentflowingacrossE-Bjunctioncanbeusedtocontrolcurrentflowingfromthe

emittertocollectoracrosstheC-Bjunction.Dependingonapplicationin

whichBJTisused,mostnotablyapplicationsconcernedwithsignalamplificationandsignalswitching(“on/off”operation),terminalsandjunctions

biasing

schemecanbearrangedintocommon-base,orcommon-emitter,or

common-collectorconfiguration.Initsveryessence,BJTisadeviceamplifyingcurrent,butincorporatedintoadequatelydesignedcircuitsitcanalso

beusedtoamplifyvoltageorpower./?no?t?bli/明顯地3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.2

TypesoftransistorsText/?ba??s??/偏置/ski?m/方案/?n?k??rp?re?t?d/編入，合并/?es(?)ns/本質(zhì)【Bipolarjunctiontransistor,BJT】20

Aspointedoutearlier,the

secondmajorclassoftransistorsisconcernedwithunipolartransistorsin

whichcurrentconsistingofmajoritycarriersflowsinthedirectionparallel

tothepotentialbarrierplaneandparalleltothesurface.Inthiscasevoltage

controlledvariationsoftheconductanceoftheregionadjacenttothesurfacethroughwhichcarriersaremovingareusedtoaffectflowofcarriers,andhence,transistorcurrent.Duetothenatureoftheiroperation,transistorsofthistypearereferredtoasthefield-effecttransistors,orFETs./?j?n??pol?r/單極的3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.2

TypesoftransistorsText【UnipolarField-EffectTransistor(FET)】1

FigureshowsaschematicdiagramoftheMOSFET,alsoknownasInsulatedGateFET,orIGFET.ItsoperationisbasedontheMOSgatecapacitor’sabilitytoinvertthenear-surfaceregionofsemiconductor.WithnovoltageVGSappliedtotransistor’sgatethereisnoinversionlayeratthesemiconductorsurfaceunderneaththegatecontact,andthus,thereisnochannelbetweensourceanddrain.Transistoriseffectivelyinthe“OFF”state(ID=0)asonlynegligiblysmallleakagecurrentisallowedtoflowbetweenSandDterminals./?n?v??r?n/反轉(zhuǎn)3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.3

OperationoftheMOSFETText/??nd?r?ni?θ/在下面/??fekt?vli/有效地/?neɡl?d??bli/可忽視的2N-channelMOSFET(a)atVGS=0andwithnochannelanddrain

currentID=0,(b)atVGS>0andchannelcreatedandthedraincurrentID>0,

and(c)outputcharacteristicsoftheMOSFET.3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.3

OperationoftheMOSFET3

SemiconductorDevicesandHowTheyAreUsed3

Whenthepositivevoltageexceedingthresholdinversionpoint,orinother

wordsexceedingthresholdvoltageVT,isappliedtothegate,astateofinversioniscreatedatthesemiconductor’ssurfaceregionunderneaththegate

andthechannelbetweensourceanddrainregionsisformed.

Undersuchconditionstransistoristurned“ON”andthedraincurrentID

(MOSFET’soutputcurrent)flowsbetweenSandDterminals.3.4ThreeTerminalDevices:Transistors3.4.3

OperationoftheMOSFET/?n?v??r?n/反轉(zhuǎn)3

SemiconductorDevicesandHowTheyAreUsed4

BycomparingthewaytransistoractionisimplementedusingMOSFET

andbipolarjunctiontransistor,aswellasoutputcharacteristicsofthesetwo

typesoftransistorsonecanpoint

tothekeydifferencebetweenMOSFETandBJTwhichisthefactthatthe

formerisavoltage(VGS)controlled,whilethelatterisacurrentcontrolled

(IEorIBdependingontransistorsconfiguration)device.TheMOSFET

featuresmuchhigherinputimpedanceduetotheveryhighresistanceof

theoxidesandwichedbetweenmetalandsemiconductor.Itsinputcurrent

isnegligiblysmall,andhence,MOSFEToperatesatthemuchlowerpower

levelsthanbipolartransistors.3.4ThreeTerminalDevices:Transistors3.4.3

OperationoftheMOSFET/??mpl?ment?d/實(shí)施/?m?pi?dns/阻抗/?neɡl?d??bli/可忽視地3

SemiconductorDevicesandHowTheyAreUsed5

Thisfeaturehasimportantimplicationswhen

itcomestothechoicesoftransistorconfigurationthebestsuitedforintegratedcircuits.Additionallyimportantinthisrespectis

thefactthattheMOSFETlendsitselftodimensionalscalingdownmuch

easierthantheBJT.3.4ThreeTerminalDevices:Transistors3.4.3

OperationoftheMOSFET/??mpl??ke??(?)nz/意義/lend/增添（特色）6

TheN-MOSFETinitsbasicconfigurationisatransistorcapableofsatisfactoryperformanceinthemajorityofdigitalandanalogapplications.However,intheapplicationsparticularlydemandingintermsofpowerconsumptionanddissipationsuchasthoseinvolvingadvancedintegratedcircuits,combininganN-MOSFETandP-MOSFETintoacomplementarypairknownasComplementaryMOS,orCMOSinshort,solvespowermanagementproblems,andatthesametimecreatesthemostefficientandthemostwidelyusedsemiconductorcell.TheideabehindpairingN-andP-MOSFETsisthatwithonetransistorofthepairbeingalwayskeptinthe“off”state,theCMOScelldrawspoweronlyduringtheveryfastswitchingbetween“on”and“off”states./d??m?nd??/苛刻的3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.4

ComplementaryMOS,CMOSText/?kɑ?mpl??ment(?)ri/相互補(bǔ)充的抽拉功率7(a)NMOSFETandPMOSFETintegratedinto(b)ComplementaryMOS(CMOS)cellininverterbiasconfiguration.3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.4

ComplementaryMOS,CMOS/trent?/溝槽8

Threeelementsdefine,andwillcontinuedefining,broadlyunderstoodprogressinMOSFETtechnology.Firstisconcernedwithdimensionalconsiderationsrelatedtotransistor’sgeometry.Asitturnsout,mostoftheissuesrelatedtoMOSFET’sgeometryarerootedintheprocessofgatescalingconsideredbelow.Secondisrelatedtotheselectionofmaterialsincludingsemiconductors,dielectrics,andconductorswhichareusedtomanufactureMOStransistors.Thethirdoneisconcernedwithtransistor’sarchitecturewhichdefinesshapeandconfigurationofitskeypartswhichevolveasthetransistor’sperformancedemandsgrow./d?i?ɑ?m?tri/幾何形狀3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.5

EvolutionoftheMOSFETText/?ru?t?d/源于/?ɑ?rk?tekt??r/結(jié)構(gòu)/??vɑ?lv/進(jìn)化9

AThin-FilmTransistor(TFT)isaMetal-OxideSemiconductorFieldEffectTransistor(MOSFET)fabricatedusingthin-filmtechnologyratherthanconventionaltechnologywhichformsMOSFETsonthebulkwafers.UnlikeinthebulkMOSFET,wherechannelisformedinthesinglecrystalsemiconductor,thechannelinTFTsismostcommonlyformedusingthin-film,non-crystalline,amorphoussemiconductor.Bydefinitionthen,TFTfeaturesinferiortoconventionalMOSFETelectronicpropertiesbecauseofthemuchhigherelectronmobilityinthesingle-crystalsemiconductorascomparedtotheamorphoussemiconductor.Inspiteoftheirperformancelimitingfeatures,TFTsareamongthemostimportantsemiconductordevicesbecauseoftheroletheyplayinflatpaneldisplaytechnologyinparticular./?n?f?ri?r/較差的3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.6

Thin-FilmTransistor(TFT)Text/mo??b?l?ti/遷移率/?p?n(?)l/平板10

Thin-FilmTransistor,TFT,withitsMOSoriginidentified,intwodifferentconfigurations(a)top-gate,and(b)bottomgate.3

SemiconductorDevicesandHowTheyAreUsed

3.4ThreeTerminalDevices:Transistors3.4.6

AlternativesolutionsText3

SemiconductorDevicesandHowTheyAreUsed21In-classexercisConnecttheEnglishwords/phrasesandChinesemeaningwithlines.bipolardevicecommon-baseelectronicdevicegatescalinginversionMoore'sLawpotentialbarrierphotontransistoraccumulation勢壘雙極器件電子器件晶體管累積光子共基極摩爾定律柵極縮小反型22In-classexercisFillintheblankswithproperwordsorphrases.1.Themaindrivingforcebehindsemiconductorgrowthwastheunprecedentedprogress

indigitalintegratedcircuits(IC)technologyasdescribedbythe

.

2.Toaccomplishvoltage

controlledsemiconductordeviceswithnon-linear,non-symmetriccurrentvoltage(I-V)characteristics,a

mustbeformedinthepieceofsemiconductormaterialequippedwithohmiccontacts.3.TheMOScapacitorisessentiallyaparallel-platecapacitorwith

sandwichedbetweenmetalcontactreferredtoasagateandsemiconductor.

3

SemiconductorDevicesandHowTheyAreUsed23單詞/短語音標(biāo)中文含義accumulation/??kju?mj??le??n/累積activeregion/??kt?v?ri?d??n/有源區(qū)amplifyingaction/??mpl?fa???/放大作用analogintegratedcircuit/??n?l??ɡ/模擬集成電路ApplicationSpecificIntegratedCircuit(ASIC)/??nt?ɡre?t?d?s??k?t/專用集成電路ballistictransport/b??l?st?k

?tr?nsp??rt

/彈道輸運(yùn)basewidth/be?sw?tθ/基區(qū)寬度bipolardevice/?ba??po?l?rd??va?s/雙極器件bipolartransistor/?ba??po?l?rtr?n?z?st?r/雙極晶體管KeyTerms3

SemiconductorDevicesandHowTheyAreUsed24單詞/短語音標(biāo)中文含義channel,channellength/?t??n(?)l/溝道，溝道長度ChargeCoupledDevice(CCD)/?k?pld/電荷耦合器件common-base/

?kɑ?m?n

be?s/共基極common-collector/k??lekt?r/共集電極common-emitter/??m?t?r/共發(fā)射極ComplementaryMOS(CMOS)/?kɑ?mpl??ment(?)ri/互補(bǔ)MOSdepletion/d??pli??(?)n/耗盡digitalintegratedcircuit/?d?d??t(?)l/數(shù)字集成電路diode/?da?o?d/二極管3

SemiconductorDevicesandHowTheyAreUsed25單詞/短語音標(biāo)中文含義displaytechnology/d??sple?/顯示技術(shù)electro-mechanicaldevice/m??k?n?k(?)l/機(jī)電設(shè)備electroluminescence/??lektro?l?m??nesns/電致發(fā)光electronicdevice/??lek?trɑ?n?k/電子器件electrostatics/?st?t?ks/靜電學(xué)emissivedisplay/??m?s?v/發(fā)射式顯示器EquivalentGateLength(EGL)/??kw?v?l?nt/等效柵極長度EquivalentOxideThickness(EOT)/??kw?v?l?nt/等效氧化層厚度field-effecttransistor(FET)/tr?n?z?st?r/場效應(yīng)晶體管FinFET/f?n/鰭式場效應(yīng)晶體管gate,gatelength/le?θ/柵極，柵極長度3

SemiconductorDevicesandHowTheyAreUsed26單詞/短語音標(biāo)中文含義gatescaling/?ske?l??/柵極縮小HeterojunctionBipolarTransistor(HBT)/?het?r??d???k?n/異質(zhì)結(jié)雙極晶體管hybridintegratedcircuit/?ha?br?d/混合集成電路imagesensor/??m?d??sens?r/圖像傳感器imagingdevice/??m?d???/成像器件implantabledevice/?m?pl?nt?bl/植入式設(shè)備InsulatedGateFET(IGFET)/??ns?le?t?d/絕緣柵場效應(yīng)晶體管integratedcircuit(IC)/??nt?ɡre?t?d?s??rk?t/集成電路interconnectline/??nt?rk??nekt/互連線inversion/?n?v??r?(?)n/反型JunctionFET(JFET)/?d???k?(?)n/結(jié)型場效應(yīng)晶體管3

SemiconductorDevicesandHowTheyAreUsed27單詞/短語音標(biāo)中文含義laseraction/?le?z?r/激射laserdiode/?da?o?d/激光二極管LEDdisplay/d??sple?/LED顯示屏LEDlighting/?la?t??/LED照明lightconvertingdevice/k?n?v??rt/光轉(zhuǎn)換器件lightemittingdevice/i?m?t??/發(fā)光器件lightemittingdiode(LED)/i?m?t??

?da?o?d/發(fā)光二極管Metal-Insulator-Semiconductoi(MIS)/??ns?le?t?r/金屬-絕緣體-半導(dǎo)體Metal-Oxide-Semiconductor(MOS)/?ɑ?ksa?d/

金屬-氧化物-半導(dǎo)體Metal-Oxide-SemiconductorField-EffectTransistor(MOSFET)/tr?n?z?st?r/金屬-氧化物一半導(dǎo)體場效應(yīng)晶體管Metal-SemiconductorFET(MES-FET)/?met(?)l?semik?nd?kt?r/金屬-半導(dǎo)體場效后晶體管3

SemiconductorDevicesandHowTheyAreUsed28單詞/短語音標(biāo)中文含義Micro-ElectroMechanicalSystem(MEMS)/m??k?n?k(?)l/微機(jī)電系統(tǒng)microprocessor/?prɑ?ses?r/微處理器monolithicintegratedcircuit/?mɑ?n??l?θ?k/單片集成電路Moore'sLaw/l??/摩爾定律multi-gateFET(MuGFET)/?m?lti-ɡe?t/多柵場效應(yīng)晶體管multilevelmetallization/?m?lta??levlmet?la??ze???n/多層金屬化N-MOSFET------N型MOSFETohmiccontact/o?m?k?kɑ?nt?kt/歐姆接觸organicLED(OLED)/??r?ɡ?n?k/有機(jī)發(fā)光二極管organicphotovoltaics/?f??t?(?)v?l?te??ks/有機(jī)光伏organicsemiconductor/??r?ɡ?n?k?semik?nd?kt?r/有機(jī)半導(dǎo)體3

SemiconductorDevicesandHowTheyAreUsed29單詞/短語音標(biāo)中文含義organicsolarcell/?so?l?rsel/有機(jī)太陽能電池OrganicTFT(OTFT)/??r?ɡ?n?k/有機(jī)薄膜晶體管p-i-n-diode/?da?o?d/p-i-n二極管P-MOSFET------P型MOSFETp-njunction/?d???k?(?)n/p-n結(jié)p-njunctiondiode/?d???k?(?)n?da?o?d/p-n結(jié)二極管phonon/?fo?nɑ?n/聲子photodiode/?fo?to??da?o?d/光電二極管photoelectriceffect/??lektr?k??fekt

/光電效應(yīng)photoluminescence/?f??t??lu?m