Whatisthemostimportantrequirement

foran

IGBTdriver?GatePeakcurrentWhatisthemostimportantreqConditionsforasafetyoperationWhichgatedriverissuitableforthemoduleSKM200GB128D?Designparameters:fsw=10kHzRg=?reverserecoverycurrentDiodeshouldbe-1.5xIdiodeby80degreecase

130Ax1.5=195AGateresistorinrangeof“test–gateresistor”ConditionsforasafetyoperatHowtofindtherightgateresistor?Rg=7OhmTwogateresistorsarepossibleforturnonandturnoffRon=7OhmRoff=10Ohm195A–maxreverserecoverycurrentHowtofindtherightgateresDifferencebetweenTrench-andSPTTechnologyTrenchTechnologyneedsasmallerGatechargeDriverhastoprovideasmallerGatechargeSPTTechnologyneedsmoreGatechargecomparedtoTrenchTechnologyDriverhastoprovideahigherGatechargeDifferencebetweenTrench-andDriverperformance–differentIGBTtechnologiesneedsdifferentgatechargeTrenchIGBTwithsamechipcurrentGatechargeis2.3uCDriverperformance–differentDriverperformance–differentIGBTtechnologiesneedsdifferentgatechargeSPTIGBTwithsamechipcurrentGatechargeis3uCDriverperformance–differentDemandsforthegatedriverThesuitablegatedrivermustprovidetherequiredGatecharge(QG)–powersupplyofthedrivermustprovidetheaveragepowerAveragecurrent(IoutAV)–powersupplyGatepulsecurrent(Ig.pulse)–mostimportantattheappliedswitchingfrequency(fsw)DemandsforthegatedriverT-8151390DeterminationofGateCharge

Gatecharge(QG)canbedeterminedfromfig.6oftheSEMITRANSdatasheetQG=1390nCThetypicalturn-onandturn-offvoltageofthegatedriverisVGG+=+15VVGG-=-8V-8151390DeterminationofGateCalculationoftheaveragecurrentCalculationofaveragecurrent:IoutAV=P/UV=+Vg+[-Vg]withP=E*fsw=QG*V*fsw

IoutAV=QG*fsw

=1390nC*10kHz=13.9mAAbsolutevalueCalculationoftheaveragecurPowersupplyrequirementsGatechargeThepowersupplyorthetransformermustprovidetheenergy(Semikronisusingpulsetransformerforthepowersupply,wemustconsiderthetransformedaveragepowerfromthetransformer)AveragecurrentIsrelatedtothetransformerPowersupplyrequirementsGateCalculationofthepeakgatecurrentExaminationofthepeakgatecurrentwithminimumgateresistanceE.g.RG.on=RG.off=7Ig.puls

≈V/RG+Rint

=23V/7+1=2.9ACalculationofthepeakgatecPulsepowerratingofthegateresistorPtotal–GateresistorPpulseGateresistor=IoutAVxV

Moreinformation:Theproblemoccurswhentheuserforgetsaboutthepeakpowerratingofthegateresistor.Thepeakpowerratingofmany"ordinary"SMDresistorsisquitesmall.ThereareSMDresistorsavailablewithhigherpeakpowerratings.Forexample,ifyoutakeanSKDdriverapart,youwillseethatthegateresistorsareinadifferentSMDpackagetoalltheotherresistors(exceptoneortwootherplacesthatalsoneedhighpeakpower).Theproblemwaslessobviouswiththroughholecomponentssimplybecausetheresistorswerephysicallybigger.ThePhilipsresistordatabookhasagoodsectiononpeakpowerratings.PulsepowerratingofthegateChoiceofthesuitablegatedriverTheabsolutemaximumratingsofthesuitablegatedrivermustbeequalorhigherthantheappliedandcalculatedvaluesGatechargeQG=1390nCAveragecurrentIoutAV=13,9mAPeakgatecurrentIg.pulse=2.9ASwitchingfrequencyfsw=10kHzCollectorEmittervoltageVCE=1200VNumberofdriverchannels:2(GBmodule)dualdriverChoiceofthesuitablegatedrComparisonwiththeparametersinthedriverdatasheetCalculatedandappliedvalues:Ig.pulse=2.9A

@Rg=7+RintIoutAV=13.9mAfsw=10kHzVCE=1200VQG=1390nCAccordingtotheappliedandcalculatedvalues,thedrivere.g.SKHI22AisabletodriveSKM200GB128DComparisonwiththeparametersPCBDriverandPCBmountableDriverforsingle,halfbridge,sixpackmodulesintegratedpotential-freepowersupplyswitchingfrequencyupto100kHzoutputpeakcurrentupto30AGatechargeupto30μCdv/dtcapabilityupto75kV/μshighEMIimmunityTTL-anCMOS-compatibleinputsandoutputswithpotentialisolationviaoptocouplerortransformer(isolationupto4kVAC)protection(interlock,shortpulsesuppression,shortcircuitprotectionviaVCE-monitoring,undervoltagemonitoring,errormemoryanderrorfeedback)SEMIDRIVERPCBDriverandPCBmountableDProductoverview(importantparameters)Productoverview(importantpaDrivercoreforIGBTmodulesSimpleAdaptableExpandableShorttimetomarketTwoversionsSKYPER?(standardversion)SKYPER?PRO(premiumversion)DrivercoreforIGBTmodulesSiAssemblyonSEMiXTM3–ModularIPMSKYPER

DriverboardSEMIX3IGBThalfbridgewithspringcontactsAssemblyonSEMiXTM3–ModulaSKYPER?–morethanasolutionmodularIPMusingSEMiX?withadapterboardsolderdirectlyinyourmainboardtake3for6-packsSKYPER?–morethanasolution

SelectionoftherightIGBTdriverAdviceSelectionoftheProblem1---------------------CrossconductionLowimpedanceProblem1---------------------CrossconductionbehaviorvCE,T1(t)iC,T1(t)VCCIO0tvGE,T1(t)vGE,T2(t)VGE,IoVGE(th)0tVGG+VCCIO0tvCE,T2(t)=

vF,D2(t)iF,D2(t),

iC,T2(t)T1D1T2D2iv,T2Whychanges

VGE,T2whenT1switcheson?

CrossconductionbehaviorvCE,TIGBT-ParasiticcapacitancesWhentheoutervoltagepotentialVchanges,theloadQhastofollowThisleadstoadisplacementcurrentiV

IGBT-ParasiticcapacitancesWSwitching:DetailedforT2iv,T2vCE,T2vGE,T2iC,T2RGE,T2CGC,T2vCE,T2(t)VCC0t0tiC,T2(t)iv,T2(t)vGE,T2(t)VGE(th)0tVGG+DiodeD2switchesoffandtakesoverthevoltageT2“sees”thevoltageoverD2asvCE,T2Withthechangedvoltagepotential,theinternalcapacitanceschangetheirchargeThedisplacementcurrentiv,T2flowsviaCGC,T2,RGE,T2andthedriveriv,T2causesavoltagedropinRGE,T2whichisaddedtoVGE,T2IfvGE,T2>VGE(th)thenT2turnson(ThereforeSKrecommends:VGG-=-5…-8…-15V)Switching:DetailedforT2iv,TProblem2-----------------------------gateprotectionZ16-18Problem2--------------------Gateclamping----how?Z18PCBdesignbecausenocableclosetotheIGBTGateclamping----how?Z18PCBProblem3-----------------boosterforthegatecurrentUseMOSFETfortheboosterForsmallIGBTsisokProblem3-----------------booProblem4----------------------------ShortcircuitOvervoltage1200V-----ischiplevel----considerinternalstrayinductance+/-20V-----gateemittervoltage----considerswitchingbehavioroffreewheelingdiodeOvercurrentPowerdissipationofIGBT(shortcircuitcurrentxtime)ChiptemperaturelevelProblem4--------------------Problem5–deadtimebetweentopandbottomIGBTTurnonandturnoffdelaymustbesymetricalProblem5–deadtimebetweenDeadtimeexplanationDeadtimeexplanationDeadtimeexplanationExample:Deadtime=3uslogiclevelTurnondelay1usTurnoffdelay2.5usTd–toffdelay+tondelay=realdeadtimeRealdeadtime:3us–(2.5us+1us)=1.5usDeadtimeexplanationExample:OurfinalrecommendationIGBTdrivermustprovidethepeakGatecurrentThestrayinductanceshouldbeverysmallinthegatedrivercircuitGate/EmitterresistorandGate/Emittercapacitor(likeCiss)veryclosetotheIGBTTurnoffstatusmusthaveaverylowimpedanceHighfrequencycapacitorsveryclosetotheIGBTdriverboosterDon’tusebipolartransistorsfortheboosterProtecttheGate/EmitterdistanceagainstovervoltageDon’tmix;PeakcurrentGatechargeOurfinalrecommendationIGBTdThanksThanksWhatisthemostimportantrequirement

foran

IGBTdriver?GatePeakcurrentWhatisthemostimportantreqConditionsforasafetyoperationWhichgatedriverissuitableforthemoduleSKM200GB128D?Designparameters:fsw=10kHzRg=?reverserecoverycurrentDiodeshouldbe-1.5xIdiodeby80degreecase

130Ax1.5=195AGateresistorinrangeof“test–gateresistor”ConditionsforasafetyoperatHowtofindtherightgateresistor?Rg=7OhmTwogateresistorsarepossibleforturnonandturnoffRon=7OhmRoff=10Ohm195A–maxreverserecoverycurrentHowtofindtherightgateresDifferencebetweenTrench-andSPTTechnologyTrenchTechnologyneedsasmallerGatechargeDriverhastoprovideasmallerGatechargeSPTTechnologyneedsmoreGatechargecomparedtoTrenchTechnologyDriverhastoprovideahigherGatechargeDifferencebetweenTrench-andDriverperformance–differentIGBTtechnologiesneedsdifferentgatechargeTrenchIGBTwithsamechipcurrentGatechargeis2.3uCDriverperformance–differentDriverperformance–differentIGBTtechnologiesneedsdifferentgatechargeSPTIGBTwithsamechipcurrentGatechargeis3uCDriverperformance–differentDemandsforthegatedriverThesuitablegatedrivermustprovidetherequiredGatecharge(QG)–powersupplyofthedrivermustprovidetheaveragepowerAveragecurrent(IoutAV)–powersupplyGatepulsecurrent(Ig.pulse)–mostimportantattheappliedswitchingfrequency(fsw)DemandsforthegatedriverT-8151390DeterminationofGateCharge

Gatecharge(QG)canbedeterminedfromfig.6oftheSEMITRANSdatasheetQG=1390nCThetypicalturn-onandturn-offvoltageofthegatedriverisVGG+=+15VVGG-=-8V-8151390DeterminationofGateCalculationoftheaveragecurrentCalculationofaveragecurrent:IoutAV=P/UV=+Vg+[-Vg]withP=E*fsw=QG*V*fsw

IoutAV=QG*fsw

=1390nC*10kHz=13.9mAAbsolutevalueCalculationoftheaveragecurPowersupplyrequirementsGatechargeThepowersupplyorthetransformermustprovidetheenergy(Semikronisusingpulsetransformerforthepowersupply,wemustconsiderthetransformedaveragepowerfromthetransformer)AveragecurrentIsrelatedtothetransformerPowersupplyrequirementsGateCalculationofthepeakgatecurrentExaminationofthepeakgatecurrentwithminimumgateresistanceE.g.RG.on=RG.off=7Ig.puls

≈V/RG+Rint

=23V/7+1=2.9ACalculationofthepeakgatecPulsepowerratingofthegateresistorPtotal–GateresistorPpulseGateresistor=IoutAVxV

Moreinformation:Theproblemoccurswhentheuserforgetsaboutthepeakpowerratingofthegateresistor.Thepeakpowerratingofmany"ordinary"SMDresistorsisquitesmall.ThereareSMDresistorsavailablewithhigherpeakpowerratings.Forexample,ifyoutakeanSKDdriverapart,youwillseethatthegateresistorsareinadifferentSMDpackagetoalltheotherresistors(exceptoneortwootherplacesthatalsoneedhighpeakpower).Theproblemwaslessobviouswiththroughholecomponentssimplybecausetheresistorswerephysicallybigger.ThePhilipsresistordatabookhasagoodsectiononpeakpowerratings.PulsepowerratingofthegateChoiceofthesuitablegatedriverTheabsolutemaximumratingsofthesuitablegatedrivermustbeequalorhigherthantheappliedandcalculatedvaluesGatechargeQG=1390nCAveragecurrentIoutAV=13,9mAPeakgatecurrentIg.pulse=2.9ASwitchingfrequencyfsw=10kHzCollectorEmittervoltageVCE=1200VNumberofdriverchannels:2(GBmodule)dualdriverChoiceofthesuitablegatedrComparisonwiththeparametersinthedriverdatasheetCalculatedandappliedvalues:Ig.pulse=2.9A

@Rg=7+RintIoutAV=13.9mAfsw=10kHzVCE=1200VQG=1390nCAccordingtotheappliedandcalculatedvalues,thedrivere.g.SKHI22AisabletodriveSKM200GB128DComparisonwiththeparametersPCBDriverandPCBmountableDriverforsingle,halfbridge,sixpackmodulesintegratedpotential-freepowersupplyswitchingfrequencyupto100kHzoutputpeakcurrentupto30AGatechargeupto30μCdv/dtcapabilityupto75kV/μshighEMIimmunityTTL-anCMOS-compatibleinputsandoutputswithpotentialisolationviaoptocouplerortransformer(isolationupto4kVAC)protection(interlock,shortpulsesuppression,shortcircuitprotectionviaVCE-monitoring,undervoltagemonitoring,errormemoryanderrorfeedback)SEMIDRIVERPCBDriverandPCBmountableDProductoverview(importantparameters)Productoverview(importantpaDrivercoreforIGBTmodulesSimpleAdaptableExpandableShorttimetomarketTwoversionsSKYPER?(standardversion)SKYPER?PRO(premiumversion)DrivercoreforIGBTmodulesSiAssemblyonSEMiXTM3–ModularIPMSKYPER

DriverboardSEMIX3IGBThalfbridgewithspringcontactsAssemblyonSEMiXTM3–ModulaSKYPER?–morethanasolutionmodularIPMusingSEMiX?withadapterboardsolderdirectlyinyourmainboardtake3for6-packsSKYPER?–morethanasolution

SelectionoftherightIGBTdriverAdviceSelectionoftheProblem1---------------------CrossconductionLowimpedanceProblem1---------------------CrossconductionbehaviorvCE,T1(t)iC,T1(t)VCCIO0tvGE,T1(t)vGE,T2(t)VGE,IoVGE(th)0tVGG+VCCIO0tvCE,T2(t)=

vF,D2(t)iF,D2(t),

iC,T2(t)T1D1T2D2iv,T2Whychanges

VGE,T2whenT1switcheson?

CrossconductionbehaviorvCE,TIGBT-ParasiticcapacitancesWhentheoutervoltagepotentialVchanges,theloadQhastofollowThisleadstoadisplacementcurrentiV

IGBT-ParasiticcapacitancesWSwitching:DetailedforT2iv,T2vCE,T2vGE,T2iC,T2RGE,T2CGC,T2vCE,T2(t)VCC0t0tiC,T2(t)iv,T2(t)vGE,T2(t)VGE(th)0tVGG+DiodeD2switchesoffandtakesoverthevoltageT2“sees”thevoltageoverD2asvCE,T2Withthechangedvoltagepotential,theinternalcapacitanceschangetheirchargeThedisplacementcurrentiv,T2flowsviaCGC,T2,RGE,T2andthedriveriv,T2causesavoltagedropinRGE,T2whichisaddedtoVGE,T2IfvGE,T2>VGE(th)thenT2turnson(ThereforeSKrecommends:VGG-=-5…-8…-15V)Switching:DetailedforT2iv,TP