集成電路工藝和版圖設(shè)計(jì)

概述

JianFang

ICDesignCenter,UESTCIC常用術(shù)語(yǔ)園片：硅片芯片(Chip,Die)：6、8：硅（園）片直徑：1

＝25.4mm6150mm;8200mm;12300mm;亞微米<1m的設(shè)計(jì)規(guī)范深亞微米<=0.5m的設(shè)計(jì)規(guī)范0.5m、0.35m－設(shè)計(jì)規(guī)范（最小特征尺寸）布線層數(shù)：金屬（摻雜多晶硅）連線的層數(shù)。集成度：每個(gè)芯片上集成的晶體管數(shù)IC工藝常用術(shù)語(yǔ)凈化級(jí)別：Class1,Class10,Class10,000每立方米空氣中含灰塵的個(gè)數(shù)去離子水氧化擴(kuò)散注入光刻…………….MOSIC及工藝MOSFET—MetalOxideSemiconductorFieldEffectTransistor.—金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管Si金屬氧化物（絕緣層、SiO2）半導(dǎo)體MOS(MIS)結(jié)構(gòu)P－襯底n+n+漏源柵柵氧化層氧化層溝道GDSVTVGSIDVDS>0反型層溝道源（Source）S漏（Drain）D柵（Gate）G柵氧化層厚度：50埃－1000埃（5nm－100nm）VT－閾值電壓電壓控制N溝MOS（NMOS）

P型襯底，受主雜質(zhì)；柵上加正電壓，表面吸引電子，反型，電子通道；漏加正電壓，電子從源區(qū)經(jīng)N溝道到達(dá)漏區(qū)，器件開(kāi)通。N－襯底p+p+漏源柵柵氧化層場(chǎng)氧化層溝道P溝MOS（PMOS）GDSVTVGSID+-VDS<0

N型襯底，施主雜質(zhì)，電子導(dǎo)電；柵上加負(fù)電壓，表面吸引空穴，反型，空穴通道；漏加負(fù)電壓，空穴從源區(qū)經(jīng)P溝道到達(dá)漏區(qū)，器件開(kāi)通。N-SiP+P+n+n+P-阱DDVoVGVSSSSVDDCMOS倒相器截面圖CMOS倒相器版圖pwellactivepolyN+implantP+implantomicontactmetalANMOSExamplepwellPwellActivePolyN+implantP+implantOmicontactMetalN－typeSiSiO2光刻膠光刻膠MASKPwellN－typeSiSiO2光刻膠光刻膠SiO2N－typeSiSiO2SiO2PwellN－typeSiSiO2PwellSiO2光刻膠MASKactiveMASKActiveSi3N4N－typeSiSiO2PwellSiO2光刻膠光刻膠MASKactiveMASKActiveSi3N4N－typeSiSiO2PwellSiO2光刻膠光刻膠Si3N4N－typeSiSiO2Pwell場(chǎng)氧場(chǎng)氧場(chǎng)氧PwellN－typeSiSiO2PwellSiO2場(chǎng)氧場(chǎng)氧場(chǎng)氧PwellpolyactivepwellpolyPwellActivePolyN+implantP+implantOmicontactMetalN－typeSiSiO2PwellSiO2MASKpoly場(chǎng)氧場(chǎng)氧場(chǎng)氧Pwell光刻膠polyN－typeSiSiO2PwellSiO2場(chǎng)氧場(chǎng)氧場(chǎng)氧PwellpolyN－typeSiSiO2PwellSiO2場(chǎng)氧場(chǎng)氧場(chǎng)氧PwellpolyN－typeSiSiO2PwellSiO2MASKN+場(chǎng)氧場(chǎng)氧場(chǎng)氧Pwellpoly光刻膠N－typeSiSiO2PwellSiO2場(chǎng)氧場(chǎng)氧場(chǎng)氧Pwell光刻膠polyN+implantS/DactivepwellpolyP+implantPwellActivePolyN+implant