1、硅片行業(yè)術(shù)語(yǔ)大全(中英文對(duì)照 A-H)Acceptor-Anelement,suchasboron,indium,andgalliumusedtocreateafreeinasemiconductor.Theacceptoratomsarerequiredtohaveonelessvalencethan thesemiconductor.素少一價(jià)電子Alignment Precision - Displacement of patterns that occurs during the photolithography process.套準(zhǔn)精度 - 在光刻工藝中轉(zhuǎn)移圖形的精度。Anisotro

2、pic - A process of etching that has very little or no undercutting各向異性 - 在蝕刻過(guò)程中，只做少量或不做側(cè)向凹刻。AreaContamination-Anyforeignparticlesormaterialthatarefoundonthesurface ofawafer.Thisisviewedasdiscoloredorsmudged,anditistheresultofstains, fingerprints, water spots,etc.沾污區(qū)域 - 任何在晶圓片表面的外來(lái)粒子或物質(zhì)。由沾污、手印和水滴產(chǎn)生的污

3、染。Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.橢圓方位角 - 測(cè)量入射面和主晶軸之間的角度。Backside-Thebottomsurfaceofasiliconwafer.(Note:Thistermisnotpreferred; instead, use backsurface.)背面 - 晶圓片的底部表面。（注：不推薦該術(shù)語(yǔ)，建議使用“背部表面”）BaseSiliconLayer-Thesiliconwafer

4、thatislocatedunderneaththeinsulatorwhich supports the silicon film on top of thewafer.底部硅層 - 在絕緣層下部的晶圓片，是頂部硅層的基礎(chǔ)。Bipolar-Transistorsthatareabletousebothholesandelectronsaschargecarriers.雙極晶體管 - 能夠采用空穴和電子傳導(dǎo)電荷的晶體管。BondedWafers-Twosiliconwafersthathavebeenbondedtogetherbysilicondioxide, which acts as a

5、n insulatinglayer.綁定晶圓片 - 兩個(gè)晶圓片通過(guò)二氧化硅層結(jié)合到一起，作為絕緣層。Bonding Interface - The area where the bonding of two wafers occurs.綁定面 - 兩個(gè)晶圓片結(jié)合的接觸區(qū)。Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.埋層 - 為了電路電流流動(dòng)而形成的低電阻路徑，攙雜劑是銻和砷。Buried Oxide

6、 Layer (BOX) - The layer that insulates between the two wafers.氧化埋層(BOX) - 在兩個(gè)晶圓片間的絕緣層。Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.載流子 - 晶圓片中用來(lái)傳導(dǎo)電流的空穴或電子。Chemical-MechanicalPolish(CMP)-Aprocessofflatteningandpolish

7、ingwafersutilizes both chemical removal and mechanical buffing. It is used during the fabricationprocess.化學(xué)-機(jī)械拋光(CMP) - 平整和拋光晶圓片的工藝，采用化學(xué)移除和機(jī)械拋光兩種方式。此工藝在前道工藝中使用。Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.卡盤痕跡 - 在晶圓片任意表面發(fā)現(xiàn)的由機(jī)械手、卡

8、盤或托盤造成的痕跡。Cleavage Plane - A fracture plane that is preferred.解理面 - 破裂面Crack - A mark found on a wafer that is greater than 0.25 mm in length.裂紋 - 長(zhǎng)度大于 0.25 毫米的晶圓片表面微痕。Crater-Visibleunderdiffusedillumination,asurfaceimperfectiononawafercan be distinguishedindividually.微坑 - 在擴(kuò)散照明下可見(jiàn)的，晶圓片表面可區(qū)分的缺陷。Cond

9、uctivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.傳導(dǎo)率（電學(xué)方面） - 一種關(guān)于載流子通過(guò)物質(zhì)難易度的測(cè)量指標(biāo) 。Conductivity Type - The type of charge carriers in a wafer, such as -ype” and “P-type”.導(dǎo)電類型 - 晶圓片中載流子的類型，N 型和 P 型。Contaminant, Particulate (see light point defect)污染微粒

10、（參見(jiàn)光點(diǎn)缺陷）ContaminationArea-Anareathatcontainsparticlesthatcannegativelyaffectcharacteristics of a siliconwafer.沾污區(qū)域 - 部分晶圓片區(qū)域被顆粒沾污，造成不利特性影響。Contamination Particulate - Particles found on the surface of a silicon wafer.沾污顆粒 - 晶圓片表面上的顆粒。Crystal Defect - Parts of the crystal that contain vacancies and d

11、islocations thatcan have an impact on a circuits electrical performance. 晶體缺陷 - 部分晶體包含的、會(huì)影響電路性能的空隙和層錯(cuò)。Crystal Indices (see Miller indices)晶體指數(shù) （參見(jiàn)米勒指數(shù)）DepletionLayer-Aregiononawaferthatcontainsanelectricalfieldthatsweeps out chargecarriers.耗盡層 - 晶圓片上的電場(chǎng)區(qū)域，此區(qū)域排除載流子。Dimple - A concave depression found

12、 on the surface of a wafer that is visible to the eye under the correct lighting conditions.表面起伏 - 在合適的光線下通過(guò)肉眼可以發(fā)現(xiàn)的晶圓片表面凹陷。Donor-Acontaminatethathasdonatedextra“free”electrons,thusmakinga“N-Type”.施主 - 可提供“自由”電子的攙雜物，使晶圓片呈現(xiàn)為 N 型。Dopant-Anelementthatcontributesanelectronoraholetotheconductionprocess, t

13、husalteringtheconductivity.DopantsforsiliconwafersarefoundinGroupsand V of the Periodic Table of theElements.攙雜劑 - 可以為傳導(dǎo)過(guò)程提供電子或空穴的元素，此元素可以改變傳導(dǎo)特性。晶圓片攙雜劑可以在元素周期表的 III 和 V 族元素中發(fā)現(xiàn)。Doping-Theprocessofthedonationofanelectronorholetotheconductionprocess by adopant.摻雜 - 把攙雜劑摻入半導(dǎo)體，通常通過(guò)擴(kuò)散或離子注入工藝實(shí)現(xiàn)。Edge Chip a

14、nd Indent - An edge imperfection that is greater than 0.25 mm.芯片邊緣和縮進(jìn) - 晶片中不完整的邊緣部分超過(guò) 0.25 毫米。Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.) 邊緣排除區(qū)域 - 位于質(zhì)量保證區(qū)和晶圓片外圍之間的區(qū)域。（所不同。）EdgeExclusion,No

15、minal(EE)-Thedistancebetweenthefixedqualityareaandperiphery of awafer.名義上邊緣排除(EE) - 質(zhì)量保證區(qū)和晶圓片外圍之間的距離。EdgeProfile-Theedgesoftwobondedwafersthathavebeenshapedeitherchemically ormechanically.邊緣輪廓 - 通過(guò)化學(xué)或機(jī)械方法連接起來(lái)的兩個(gè)晶圓片邊緣。Etch-Aprocessofchemicalreactionsorphysicalremovaltoridthewaferofexcessmaterials.蝕刻

16、- 通過(guò)化學(xué)反應(yīng)或物理方法去除晶圓片的多余物質(zhì)。Fixed Quality Area (FQA) - The area that is most central on a wafer surface.質(zhì)量保證區(qū)(FQA) - 晶圓片表面中央的大部分。Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.平邊 - 晶圓片圓周上的一個(gè)小平面，作為晶向定位的依據(jù)。Flat Diameter - The measurement from the center o

17、f the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)平口直徑 - 由小平面的中心通過(guò)晶圓片中心到對(duì)面邊緣的直線距離。Four-Point Probe - Test equipment used to test resistivity of wafers.四探針 - 測(cè)量半導(dǎo)體晶片電阻的設(shè)備。Furnace and Thermal Processes - Equipment with a temperature gauge used for

18、 processing wafers. A constant temperature is required for the process.爐管和熱處理 有溫度計(jì)的晶圓加工設(shè)備，具有恒定的溫度。FrontSide-Thetopsideofasiliconwafer.(Thistermisnotpreferred;usefront surfaceinstead.)正面 - 晶圓片的上表面（此術(shù)語(yǔ)不推薦，建議使用“前部表面”）。Goniometer - An instrument used in measuring angles.角度計(jì) - 用來(lái)測(cè)量角度的設(shè)備。Gradient, Resisti

19、vity (not preferred; see resistivity variation)電阻梯度 （不推薦使用，參見(jiàn)“電阻變化”）Groove - A scratch that was not completely polished out.凹槽 - 沒(méi)有被完全拋光的擦傷。HandScribeMark-Amarkingthatishandscratchedontothebacksurfaceofafor identificationpurposes.手工印記 - 為區(qū)分不同的晶圓片而手工在背面做出的標(biāo)記。Haze-Amassconcentrationofsurfaceimperfecti

20、ons,oftengivingahazyappearance to thewafer.霧狀缺陷 - 晶圓片表面的集中缺陷，常常表現(xiàn)為晶圓片表面呈霧狀。晶圓步進(jìn)機(jī)曝光製程時(shí)所造成的結(jié)晶狀缺陷污染生長(zhǎng)一般稱為haze Hole - Similar to a positive charge, this is caused by the absence of a valence electron.空穴 - 和正電荷類似，是由缺少價(jià)電子引起的。硅片行業(yè)術(shù)語(yǔ)大全(中英文對(duì)照 I-Z)Ingot-Acylindricalsolidmadeofpolycrystallineorsinglecrystalsil

21、iconwhich wafers arecut.晶錠 - 由多晶硅或單晶硅制成的圓柱體，晶圓片由此切割而成。Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.激光散射 - 由晶圓片表面缺陷引起的脈沖信號(hào)。Lay - The main direction of surface texture on a wafer.層 - 晶圓片表面結(jié)構(gòu)的主要方向。Light Point Defect (LPD) (Not preferred; see localized ligh

22、t-scatterer)光點(diǎn)缺陷(LPD) （不推薦使用，參見(jiàn)“局部光散射”）Lithography - The process used to transfer patterns onto wafers.光刻 - 從掩膜到圓片轉(zhuǎn)移的過(guò)程。Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light pointdefect.局部光散射 - 晶圓片表面特征，例如小坑或擦傷導(dǎo)致光線

23、散射，也稱為光點(diǎn)缺陷。Lot - Wafers of similar sizes and characteristics placed together in a shipment.Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Typearea.多數(shù)載流子 - 一種載流子，在半導(dǎo)體材料中起支配作用的空穴或電子，例如在 N 型中是電子。Mechanical Test Wafer - A silic

24、on wafer used for testing purposes.機(jī)械測(cè)試晶圓片 - 用于測(cè)試的晶圓片。Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 m.微粗糙度 - 小于 100 微米的表面粗糙度。MillerIndices,ofaCrystallographicPlane-Asystemthatutilizesthreenumbers to identify plane orientation in acrystal.M

25、iller100,110等MinimalConditionsorDimensions-Theallowableconditionsfordeterminingor not a wafer is consideredacceptable.最小條件或尺寸 - 確定晶圓片是否合格的允許條件。Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.少數(shù)載流子 - 在半導(dǎo)體材料中特定范圍內(nèi)

26、不起支配作用的空穴或電子，在 P 型中是電子， 在 N 型中是空穴。Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.堆垛 - 晶圓片表面超過(guò) 0.25 毫米的凸起缺陷。Notch - An indent on the edge of a wafer used for orientation purposes.凹槽 - 晶圓片邊緣上用于晶片定位的小凹槽。Orange Peel - A roughened surface that is visible to the unaided eye.

27、桔皮 - 可以用肉眼看到的粗糙表面Orthogonal Misorientation -直角定向誤差 -Particle - A small piece of material found on a wafer that is not connected with it.顆粒 附著在晶圓片上的細(xì)小物質(zhì)。Particle Counting - Wafers that are used to test tools for particle contamination.顆粒計(jì)算 - 用來(lái)測(cè)試晶圓片顆粒污染的測(cè)試工具。ParticulateContamination-Particlesfoundont

28、hesurfaceofawafer.Theyappear as bright points when a collineated light is shined on thewafer.Pit - A non-removable imperfection found on the surface of a wafer. Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.點(diǎn)缺陷 - 不純凈的晶體缺陷，例如晶格空缺或原子空隙。Preferent

29、ial Etch -優(yōu)先蝕刻 -Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring.This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.測(cè)試晶圓片 - 影印過(guò)程

30、中用于顆粒計(jì)算、測(cè)量溶解度和檢測(cè)金屬污染的晶圓片。對(duì)于具體應(yīng)用該晶圓片有嚴(yán)格的要求，但是要比主晶圓片要求寬松些。Primary Orientation Flat - The longest flat found on the wafer.主定位邊 - 晶圓片上最長(zhǎng)的定位邊。ProcessTestWafer-Awaferthatcanbeusedforprocessesaswellasareacleanliness.加工測(cè)試晶圓片 - 用于區(qū)域清潔過(guò)程中的晶圓片。Profilometer - A tool that is used for measuring surface topography

31、.表面形貌劑 - 一種用來(lái)測(cè)量晶圓片表面形貌的工具。Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.電阻率（電學(xué)方面） - 材料反抗或?qū)闺姾稍谄渲型ㄟ^(guò)的一種物理特性。Required - The minimum specifications needed by the customer when ordering wafers.必需(規(guī)格) - 訂購(gòu)晶圓片時(shí)客戶要求達(dá)到的最低規(guī)格。Roughness-Thetexturefo

32、undonthesurfaceofthewaferthatisspacedverytogether.粗糙度 - 晶圓片表面間隙很小的紋理。Saw Marks - Surface irregularities 鋸痕 - 表面不規(guī)則。Scan Direction - In the flatness calculation, the direction of the subsites.掃描方向 - 平整度測(cè)量中，局部平面的方向。Scanner Site Flatness -局部平整度掃描儀 -Scratch - A mark that is found on the wafer surface.擦傷

33、 - 晶圓片表面的痕跡。Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.第二定位邊 - 比主定位邊小的定位邊，它的位置決定了晶圓片的類型和晶向。Shape -形狀 -Site - An area on the front surface of the wafer that has sides par

34、allel and perpendiculartotheprimaryorientationflat.(Thisareaisrectangularin局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區(qū)域。Site Array - a neighboring set of sites 局部表面系列 - 一系列的相關(guān)局部表面。Site Flatness -局部平整 -Slip - A defect pattern of small ridges found on the surface of the wafer.劃傷 - 晶圓片表面上的小皺造成的缺陷。Smudge - A defect or contamination found on the wafer caused by fingerprints.污跡 - 晶圓片上指紋造成的缺陷或污染。Sori -Striation - Defects or contaminations found in the shape of a helix.條痕 - 螺紋上的缺陷或污染。Subsite, of a Site - An area found within the si