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2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0第8章AlGaInP發(fā)光二極管AlGaInP2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Introductionto
MOCVD/MOVPE/OMVPE2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVD/MOVPE/OMVPEMOCVD: MetalOrganicChemicalVapor DepositionMOVPE: MetalOrganicVaporPhaseEpitaxyOMVPE: OrganoMetallicVaporPhaseEpitaxyOftenallthreeexpressionsareusedinterchangeably2021/2/13SaturdayTSSELpart-1MOCVD實(shí)例三、LED外延片的制作二、LED外延片的制作MOCVD實(shí)例三、LED外延片的制作二、LED外延片的制作系統(tǒng)簡(jiǎn)介
本系統(tǒng)為英國(guó)ThomasSwan公司制造，具有世界先進(jìn)水平的商用金屬有機(jī)源氣相外延(MOCVD)材料生長(zhǎng)系統(tǒng)，可用于制備GaAs和InP、GaN為代表的第二、三代半導(dǎo)體材料。在高亮度的藍(lán)光發(fā)光二極管(LED)、激光器(LD)、日盲紫外光電探測(cè)器、高效率太陽(yáng)能電池、高頻大功率電子器件領(lǐng)域中具有廣泛的應(yīng)用。
三、LED外延片的制作二、LED外延片的制作系統(tǒng)簡(jiǎn)介三、LED外延片的制作二、LED外延片的制作MOCVD已經(jīng)成為工業(yè)界主要使用的鍍膜技術(shù)。使用MOCVD這種鍍膜技術(shù)制作LED的外延片，即在襯底上鍍多層膜。外延片是LED生產(chǎn)的上游產(chǎn)業(yè)，在光電產(chǎn)業(yè)中扮演重要的角色。有些專家經(jīng)常用一個(gè)國(guó)家或地區(qū)擁有MOCVD外延爐的數(shù)量來(lái)衡量這個(gè)國(guó)家或地區(qū)的光電行業(yè)的發(fā)展規(guī)模。三、LED外延片的制作二、LED外延片的制作MOCVD已經(jīng)成為工業(yè)界主要使用的鍍膜技術(shù)。三、LED外延片2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0TheWorldofSemiconductorsIII IV VCompoundsemiconductors III-Vs:GaAs,AlGaAs,GalnP, AlGaInP,GaN,InGaN… Speciality:SiCTraditionalsemiconductors Si:DRAMs,processorsAdvantagesofcompoundsemiconductors:?faster,higherfrequencies?visiblelight,infrared?highefficientphotovoltaicsheatandhighpowerresistantEnablingtechnologyfor:2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0HowMOCVDWorks2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ComponentsofaLow
Pressure(LP)MOCVDSystemgascontrolunitreactorwithheatedsusceptorvacuumsystemcontrolunitscrubbingsystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SimplifiedPresentation
ofaCrystalGrowthProcess2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicPrincipleofthe
MOVPEProcessAgasmixturecontainingtheprecursorsneededforgrowth,andifnecessaryfordoping,ispassedoveraheatedsubstrate.Theprecursormoleculespyrolyze(使裂解)leavingtheatoms,e.g.,GaandAsatomsonthesubstratesurface.Theatomsbondtothesubstratesurfaceandanewcrystallinelayerisgrown,inthiscaseGaAs.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Precursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Sample:PrecursorMoleculesAsH3DMZn-(CH3)2ZnTMGa-(CH3)3GaHCAsZnGa8.11源材料（Precursors）2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVDPrecursorsDesirablepropertiesofprecursors:LowtoxicityLiquidatroomtemperatureSuitablevaporpressureatroomtemperatureLowcarboncontaminationingrownlayer(avoidCH3radicals),however,forsomeapplicationsCdopingisdesired(thoughrarelyachievedbyautodopingtechniques.NoparasiticreactionswithothersourcesGoodlongtermstability(shouldnotdecomposeinbubbler)PyrolysistemperatureshouldmatchtheidealgrowthtemperatureInexpensiveforindustrialmassproduction2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors-Bubblers2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupVPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0DopantPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicTransportandGrowthMechanisms2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0PrincipleofLP-MOVPEH,NP=100Torr22TMGa,AsH3TMGa,NH3TMIn,PH3gasblendingreactorhighpurity,precisemixingsafetyGaAs,InPsubstrate,T~400-1000°CD~100rpmproductionorientedlowcostofownershipGa(CH)+AsHGaAs+3CH3334TMAl,TMGa,,sapphireGa(CH)+NHGaN+3CH3334scrubbingsystemH2filterunitvacuumpumpthrottlevalvecrystalquality,thicknessuniformity,reproducibility2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOVPEGrowthMechanisms
(simplified)boundarylayersurfacediffusionandreactionincorporationandgrowthCH4=CH3+HH+H=H2wafersurfacemasstransporttothesurfacebydiffusionatomicstepHHHAsCH3GaCH3CH3precursordecomposition-radicaladsorptionCH3CH3-radicalgasphasehorizontalgasflowHHHAsGaCH3CH3CH3H2H2H2H22021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0
Example:GaAsGrowthEfficiency
102103104GrowthEfficiency[μm/mole]1000/T[K-1]0.61.01.4BAC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LayerGrowthInGaNlayersinvestigatedbyscanningelectronmicroscopy(SEM),cathodo-luminescence(CL)imaging,highresolutionX-rayanalysis(EDX)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicDeviceproduction
–thestepssurroundingMOCVD2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SiliconWaferProductionPatternPreparationCrystalPullingSiliconprocessismorecomplex,upto100processsteps,plusmeasurementsateachstage,~50daycycle2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0OptoElectronics2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LEDs15000LEDsona2“-WaferChipsize:0.35x0.35mmTheoptoelectronicpropertiesofthedifferentcompoundsemiconductorsdeterminetheilluminatedcolorofanLED:redtoyellow/green AlGaAs,AlGaInPgreen/blue (In)GaNWhitelightisgeneratedbycombiningblueLEDswithfluorescentdyes.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GaNLEDTestStructures
grownonanAIXTRONSystemWithcourtesyofNationalCentralUniversity,TaiwanWithcourtesyofSAIT,KoreaGaNBlueLaser
devicegrownonaTHOMASSWANSystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0WhatisimportantforsuccessfulEpitaxy?
ThermalmanagementinthereactoreffectsTransportcoefficientReactionratesIncorporationofdopantsCompositionofmulticomponentmaterialsystemsCompositionofthegasphaseFor(AlxGa1-x)0.52In0.48PLEDstheAl/Ga-ratiodeterminesthecoloroftheLED.ThereforecalibratedandstableMFCsandPCsareneededforreproducibleLEDcolors.BubblertemperaturedeterminesvaporpressureofMO2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ProductsmadebyMOVPE
2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0
GaAs
AlGaAs
InGaP
InGaAs
InSb
?
MESFETs
?
HEMTs
?
PHEMTs
?
HBTs
?
Lasers?
MobileTelephony
?
GlobalPositioningSystems(GPS)
?
SatelliteSystems
?
DirectBroadcastSatellite(DBS)
?
Paging
?
WirelessLAN/WirelessCable
?
AutomotiveRadar
InP
InGaAs
InAlAs
InGaAlAs
InGaAsP
InGaAsN
?
DH,QW,DFBLasers
?
LEDs
?
VCSELs
?
Detectors
?
HBTs?
OpticalFiberCommunications
?
Sensors
?
Infra-RedCameras
?
WirelessCommunicationsGaAs
AlGaAs
InGaAs
InGaAlAs
InGaAsP
?
DH,QW,
?
VCSELs
?
HEMTs
?
FETs
?
SolarCells
?
Detectors?
FiberAmplifiers,GigabitEthernet
?
MedicalSystems
?
SolidStateLaserPumps
?
CD,Minidisc
?
GPS
?
Automotive
?
SatelliteSystems
InGaP
InAlP
InAlP
GaN
InGaN
InGaAlN
?
VisibleLasers
?
UHBLEDs
?
VisibleVCSELs
?
HBTs
?
DJSolarCells
?
Displays
?
DVD/CD
?
Illumination
?
Pointers/BarCode
?
WirelessCommunications
?
SatelliteSystems
?
MedicalApplications
MaterialSystems Devices Applications?IQEPLC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0RequirementsofCompoundSemiconductorIndustry Uniformityoflayerthicknessandcompositionof±1% onthewafer TemperatureuniformityonwaferT=±1°Cwithina widetemperaturerange Wafertowaferandruntorunreproducibility Lowcostofownership,highwafercapacity,highup- timeratio2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0
WhyMOVPE?
Veryhighqualityofgrownlayers(highgrowthrateanddopinguniformity/reproducibility)Highthroughputandnoultrahighvacuumneeded(comparedtoMBE),thereforeeconomicallyadvantageous,highsystemup-timeDifferentmaterialscanbegrowninthesamesystem,thereforehighestflexibilityGrowthofsharpinterfacespossible-thereforeverysuitableforheterostructures,e.g.,multiquantumwells(MQW)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SummaryDiscussedtopics:PropertiesofcommonlyusedprecursorsFundamentalMOVPEgrowthprinciplesDevicesmadebyMOVPE?Dr.WalterReichert AIXTRONA.G.&TrevorWebb THOMASSWANSCIENTIFICEQUIPMENTLTD.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0TSSEL3X2”CCSInPMOCVDSystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0源輸送子系統(tǒng)(GasDeliverySystem)反應(yīng)室與加熱子系統(tǒng)（Reactor&HeaterSystem）低壓子系統(tǒng)(LowPressureExhaustSystem)尾氣處理子系統(tǒng)(DryScrubberSystem)安全與控制單元(Safety&ControlUnit)3X2”CCSInPMOCVD系統(tǒng)構(gòu)成KeyLaboratoryofOpticalCommunication&LightwaveTechnologies,MinistryofEducation2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0
AsH3TMGa-(CH3)3GaHCAsGaPrecursorsMolecularsV族源：AsH3PH3NH3III族源：TMAlTEAlTMGaTEGaTMInTEIn摻雜源：DMZnDEZnCp2MgCBr4SiH4Si2H6H2S2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0分子式分子量熔點(diǎn)飽和蒸汽壓公式冷阱溫度飽和蒸汽壓(CH3)3GaTMGa114.82-15.8oC0oC68.480Torr(CH3)3AlTMAl72.0915.4oC10oC4.832Torr(CH3)3InTMIn159.9388.4oC25oC1.714Torr(C2H5)2ZnDEZn123.49-28.0oC5oC4.989Torr金屬有機(jī)源(MOSource)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0DoublePlenumShowerhead2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ClosedCoupledShowerheadNozzleOpticalPort2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ReactorGraphiteSusceptorSusceptorSupportLowerQuartzLiner2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GraphiteHeaterZoneAZoneBZoneCInP系統(tǒng)采用石墨加熱器，GaN系統(tǒng)采用鎢絲加熱器2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ThomasSwanScrubberSystems
Episorb–AsH3&PH3 EpiCat–NH3
2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicPrinciplesEpiSorbII(2columns)Two-columndesignpermitssimultaneousadsorptioninonecolumnandoxidationintheother.AdsorptionontoCharcoalmediumOxidationofothercolumn5programmableOxidationsteps2021/2/13SaturdayTSSELpart-1恭祝馬到成功恭祝2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0第8章AlGaInP發(fā)光二極管AlGaInP2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Introductionto
MOCVD/MOVPE/OMVPE2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVD/MOVPE/OMVPEMOCVD: MetalOrganicChemicalVapor DepositionMOVPE: MetalOrganicVaporPhaseEpitaxyOMVPE: OrganoMetallicVaporPhaseEpitaxyOftenallthreeexpressionsareusedinterchangeably2021/2/13SaturdayTSSELpart-1MOCVD實(shí)例三、LED外延片的制作二、LED外延片的制作MOCVD實(shí)例三、LED外延片的制作二、LED外延片的制作系統(tǒng)簡(jiǎn)介
本系統(tǒng)為英國(guó)ThomasSwan公司制造，具有世界先進(jìn)水平的商用金屬有機(jī)源氣相外延(MOCVD)材料生長(zhǎng)系統(tǒng)，可用于制備GaAs和InP、GaN為代表的第二、三代半導(dǎo)體材料。在高亮度的藍(lán)光發(fā)光二極管(LED)、激光器(LD)、日盲紫外光電探測(cè)器、高效率太陽(yáng)能電池、高頻大功率電子器件領(lǐng)域中具有廣泛的應(yīng)用。
三、LED外延片的制作二、LED外延片的制作系統(tǒng)簡(jiǎn)介三、LED外延片的制作二、LED外延片的制作MOCVD已經(jīng)成為工業(yè)界主要使用的鍍膜技術(shù)。使用MOCVD這種鍍膜技術(shù)制作LED的外延片，即在襯底上鍍多層膜。外延片是LED生產(chǎn)的上游產(chǎn)業(yè)，在光電產(chǎn)業(yè)中扮演重要的角色。有些專家經(jīng)常用一個(gè)國(guó)家或地區(qū)擁有MOCVD外延爐的數(shù)量來(lái)衡量這個(gè)國(guó)家或地區(qū)的光電行業(yè)的發(fā)展規(guī)模。三、LED外延片的制作二、LED外延片的制作MOCVD已經(jīng)成為工業(yè)界主要使用的鍍膜技術(shù)。三、LED外延片2021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0TheWorldofSemiconductorsIII IV VCompoundsemiconductors III-Vs:GaAs,AlGaAs,GalnP, AlGaInP,GaN,InGaN… Speciality:SiCTraditionalsemiconductors Si:DRAMs,processorsAdvantagesofcompoundsemiconductors:?faster,higherfrequencies?visiblelight,infrared?highefficientphotovoltaicsheatandhighpowerresistantEnablingtechnologyfor:2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0HowMOCVDWorks2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ComponentsofaLow
Pressure(LP)MOCVDSystemgascontrolunitreactorwithheatedsusceptorvacuumsystemcontrolunitscrubbingsystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SimplifiedPresentation
ofaCrystalGrowthProcess2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicPrincipleofthe
MOVPEProcessAgasmixturecontainingtheprecursorsneededforgrowth,andifnecessaryfordoping,ispassedoveraheatedsubstrate.Theprecursormoleculespyrolyze(使裂解)leavingtheatoms,e.g.,GaandAsatomsonthesubstratesurface.Theatomsbondtothesubstratesurfaceandanewcrystallinelayerisgrown,inthiscaseGaAs.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Precursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0Sample:PrecursorMoleculesAsH3DMZn-(CH3)2ZnTMGa-(CH3)3GaHCAsZnGa8.11源材料（Precursors）2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOCVDPrecursorsDesirablepropertiesofprecursors:LowtoxicityLiquidatroomtemperatureSuitablevaporpressureatroomtemperatureLowcarboncontaminationingrownlayer(avoidCH3radicals),however,forsomeapplicationsCdopingisdesired(thoughrarelyachievedbyautodopingtechniques.NoparasiticreactionswithothersourcesGoodlongtermstability(shouldnotdecomposeinbubbler)PyrolysistemperatureshouldmatchtheidealgrowthtemperatureInexpensiveforindustrialmassproduction2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupIIIMOPrecursors-Bubblers2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GroupVPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0DopantPrecursors2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicTransportandGrowthMechanisms2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0PrincipleofLP-MOVPEH,NP=100Torr22TMGa,AsH3TMGa,NH3TMIn,PH3gasblendingreactorhighpurity,precisemixingsafetyGaAs,InPsubstrate,T~400-1000°CD~100rpmproductionorientedlowcostofownershipGa(CH)+AsHGaAs+3CH3334TMAl,TMGa,,sapphireGa(CH)+NHGaN+3CH3334scrubbingsystemH2filterunitvacuumpumpthrottlevalvecrystalquality,thicknessuniformity,reproducibility2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0MOVPEGrowthMechanisms
(simplified)boundarylayersurfacediffusionandreactionincorporationandgrowthCH4=CH3+HH+H=H2wafersurfacemasstransporttothesurfacebydiffusionatomicstepHHHAsCH3GaCH3CH3precursordecomposition-radicaladsorptionCH3CH3-radicalgasphasehorizontalgasflowHHHAsGaCH3CH3CH3H2H2H2H22021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0
Example:GaAsGrowthEfficiency
102103104GrowthEfficiency[μm/mole]1000/T[K-1]0.61.01.4BAC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LayerGrowthInGaNlayersinvestigatedbyscanningelectronmicroscopy(SEM),cathodo-luminescence(CL)imaging,highresolutionX-rayanalysis(EDX)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0BasicDeviceproduction
–thestepssurroundingMOCVD2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SiliconWaferProductionPatternPreparationCrystalPullingSiliconprocessismorecomplex,upto100processsteps,plusmeasurementsateachstage,~50daycycle2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0OptoElectronics2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0LEDs15000LEDsona2“-WaferChipsize:0.35x0.35mmTheoptoelectronicpropertiesofthedifferentcompoundsemiconductorsdeterminetheilluminatedcolorofanLED:redtoyellow/green AlGaAs,AlGaInPgreen/blue (In)GaNWhitelightisgeneratedbycombiningblueLEDswithfluorescentdyes.2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0GaNLEDTestStructures
grownonanAIXTRONSystemWithcourtesyofNationalCentralUniversity,TaiwanWithcourtesyofSAIT,KoreaGaNBlueLaser
devicegrownonaTHOMASSWANSystem2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0WhatisimportantforsuccessfulEpitaxy?
ThermalmanagementinthereactoreffectsTransportcoefficientReactionratesIncorporationofdopantsCompositionofmulticomponentmaterialsystemsCompositionofthegasphaseFor(AlxGa1-x)0.52In0.48PLEDstheAl/Ga-ratiodeterminesthecoloroftheLED.ThereforecalibratedandstableMFCsandPCsareneededforreproducibleLEDcolors.BubblertemperaturedeterminesvaporpressureofMO2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0ProductsmadebyMOVPE
2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0
GaAs
AlGaAs
InGaP
InGaAs
InSb
?
MESFETs
?
HEMTs
?
PHEMTs
?
HBTs
?
Lasers?
MobileTelephony
?
GlobalPositioningSystems(GPS)
?
SatelliteSystems
?
DirectBroadcastSatellite(DBS)
?
Paging
?
WirelessLAN/WirelessCable
?
AutomotiveRadar
InP
InGaAs
InAlAs
InGaAlAs
InGaAsP
InGaAsN
?
DH,QW,DFBLasers
?
LEDs
?
VCSELs
?
Detectors
?
HBTs?
OpticalFiberCommunications
?
Sensors
?
Infra-RedCameras
?
WirelessCommunicationsGaAs
AlGaAs
InGaAs
InGaAlAs
InGaAsP
?
DH,QW,
?
VCSELs
?
HEMTs
?
FETs
?
SolarCells
?
Detectors?
FiberAmplifiers,GigabitEthernet
?
MedicalSystems
?
SolidStateLaserPumps
?
CD,Minidisc
?
GPS
?
Automotive
?
SatelliteSystems
InGaP
InAlP
InAlP
GaN
InGaN
InGaAlN
?
VisibleLasers
?
UHBLEDs
?
VisibleVCSELs
?
HBTs
?
DJSolarCells
?
Displays
?
DVD/CD
?
Illumination
?
Pointers/BarCode
?
WirelessCommunications
?
SatelliteSystems
?
MedicalApplications
MaterialSystems Devices Applications?IQEPLC2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0RequirementsofCompoundSemiconductorIndustry Uniformityoflayerthicknessandcompositionof±1% onthewafer TemperatureuniformityonwaferT=±1°Cwithina widetemperaturerange Wafertowaferandruntorunreproducibility Lowcostofownership,highwafercapacity,highup- timeratio2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0
WhyMOVPE?
Veryhighqualityofgrownlayers(highgrowthrateanddopinguniformity/reproducibility)Highthroughputandnoultrahighvacuumneeded(comparedtoMBE),thereforeeconomicallyadvantageous,highsystemup-timeDifferentmaterialscanbegrowninthesamesystem,thereforehighestflexibilityGrowthofsharpinterfacespossible-thereforeverysuitableforheterostructures,e.g.,multiquantumwells(MQW)2021/2/13SaturdayTSSELpart-12021/2/13SaturdayTSSELpart-1-MOVPEgrowth.ppt-version1.0SummaryDiscussedtopics:Propertiesofcommonly
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