銀薄膜電阻率測(cè)量數(shù)據(jù)記錄表膜厚：44.4nm電流I/mA正向電壓U+/Mv反向電壓U-/mV平均電壓U/mV0.1510.1620.1630.1630.1720.1860.1850.1860.1930.2070.2080.2080.2230.2410.2400.2410.2810.3010.3020.3020.3160.3400.3390.3400.3560.3830.3840.3840.4020.4330.4340.4340.4480.4820.4830.483電阻率為216.879(Q/nm)膜厚：44.4nmy—丄.uftua一u.uuuo i.bq??0.6000.5000.4000.3000.2000.1000.0000.000 0.100 0.200 0.300 0.400 0.500膜厚：88.8nm電流I/mA正向電壓U+/Mv反向電壓U-/mV平均電壓U/mV0.5320.1210.1260.1241.7430.4040.4090.4073.2640.7590.7640.7624.7441.1051.1101.1085.6421.3141.3201.3177.5391.7581.7631.7619.1632.1382.1432.14110.6792.4922.4972.49512.2212.8542.8592.857電阻率為94.11g/nm)

y=0.2338x-0.00131”3.0002.5002.0001.5001.0000.5005.00010.000膜厚：88.8nm3.0002.5002.0001.5001.0000.5005.00010.000膜厚：133.2nm電流I/mA正向電壓U+/Mv反向電壓U-/mV平均電壓U/mV0.7940.1070.1120.1102.3720.3270.3320.3303.9880.5530.5580.5565.2350.7270.7320.7306.9040.9600.9650.9638.4881.1811.1871.1849.7851.3621.3681.36513.1931.8391.8441.84214.8712.0732.0792.076電阻率為84.35(Q/nm)15.0000.0000.000膜厚：133.2nm2.5002.000y=0.1397x2.000y=0.1397x-0.00181.5001.0000.5000.0000.000 5.000 10.000 15.000 20.000膜厚：222nm電流I/mA正向電壓U+/Mv反向電壓U-/mV平均電壓U/mV3.9700.3760.3820.37910.0900.9620.9670.96514.4801.3821.3871.38521.4802.0522.0582.05526.6702.5472.5522.55033.1703.1713.1763.17439.7503.8013.8063.804

45.2304.3254.3304.32851.1504.8924.8974.895電阻率為96.30(Q/nm)膜厚：222nm膜厚：277.5nm電流I/mA正向電壓U+/Mv反向電壓U-/mV平均電壓U/mV3.9900.1240.1290.12711.4800.3630.3680.36615.5500.4930.4980.49620.0100.6350.6400.63825.1700.8000.8050.80330.1500.9580.9630.96136.5101.1611.1661.16442.6501.3571.3111.33454.9701.7491.7551.752電阻率為39.87(Q/nm)膜厚：277.5nm2.0001.8002.0001.8001.6001.4001.2001.0000.8000.6000.4000.2000.000y=().0317x+0.0019,■?一."rT.--'0.000 10.000 20.000 30.000 40.000 50.