1、CHAPTER 6,1,PPT學(xué)習(xí)交流,Bond Stick On Ball(BSOB)/Bond Ball On Stitch(BBOS)/ Tail Break,2,PPT學(xué)習(xí)交流,1.0) BOND STICK ON BALL(BSOB),1.1) Description This bonding process is specially developed by ASM to handle multi-die(MCM) bonding application. In the conventional approach, if one is trying to connect the g

2、old wire from one die to the another, a capillary mark of second bond will be evident on top of the die which may damage the die. The BSOB process will solve this problem by bonding a ball onto the dies surface first, followed by bonding another wire where the second bonds wedge will be landing on t

3、op of this bonded ball(figure 1).,3,PPT學(xué)習(xí)交流,Die 1,Die 2,Bond Ball,2nd Bond(wedge),Figure 1 : Bond Stick On Ball(BSOB),4,PPT學(xué)習(xí)交流,2.0) BOND BALL ON STITCH(BBOS)/ SECURITY BOND,2.1) Description This process is also known as security bond. It bonds a ball on top of the wedge of the normal connection wir

4、e.This process is mainly used to secure the second bond sticking capability.(Figure 2),Die 1,Lead,Bond Ball,2nd Bond(wedge),Figure 2 : Bond Ball On Stitch (BBOS),5,PPT學(xué)習(xí)交流,3.1) Free Air Ball (FAB 2)is aligned to the center of the bond pad on device 2.,FAB 2,3.0 STANDOFF BALL CONTROL BONDING SEQUENCE

5、,6,PPT學(xué)習(xí)交流,3.2) Capillary descends and bonds ball to bond pad.,Device 1,Device 2,W/clamp open,Capillary,Application of 1st bond stand off ball parameter to form Ball Thickness and Ball Size,During Stand Off Bonding , SOB parameters are applied .,7,PPT學(xué)習(xí)交流,3.3) Capillary rises to loop base to clear b

6、all.,Device 1,Device 2,W/clamp open,Capillary rises to set Loop Base,Loop Base,Contact Pt.,Loop base is the distance between the capillary tip and contact point.,Recommended setting = 2,8,PPT學(xué)習(xí)交流,3.4) Capillary move to programme ball offset. Ball offset can be programmed towards or away from the fir

7、st bond. + ve towards 2nd bond - ve away 2nd bond,Device 1,Device 2,Actual Ball Offset = Setting x 10umIf Ball Offset Setting = 22Then Actual Loop Base =220um,Recommended Setting = - ve 35,9,PPT學(xué)習(xí)交流,3.5) Capillary descends and forms stitch bond on top of the ball.,Device 1,Device 2,*Ball Thickness,S

8、OB Parameter (Stand Off Ball Parameter),Capillary descends to set Ball Thickness (Amt. Z movement above the ball height),Contact Pt.,* Ball Thickness is the distance between the capillary tip and contact point Recommended setting = 2,10,PPT學(xué)習(xí)交流,3.6) Capillary moves horizontally for a scrub distance

9、to weaken the wire at ball neck.,Device 1,Device 2,Scrub one direction away from ball,Actual Scrub Distance = Setting x 0.8 umIf Scrub Distance Setting = 10Then Actual Scrub Distance = 8 um,Capillary move to set Scrub Distance One direction ONLY - Away from the ball,Recommended setting = 8,11,PPT學(xué)習(xí)交

10、流,3.7) Capillary rises to tail height,Device 1,Device 2,W/clamp close,Capillary moves to set Tail Length (Amount Z movement above the bump before the wire clamp closes),Recommended setting = 35,12,PPT學(xué)習(xí)交流,3.8) Capillary rises and tears the wire, as BH ascend to Fire Level.,Device 1,Device 2,W/c clos

11、e,13,PPT學(xué)習(xí)交流,14,PPT學(xué)習(xí)交流,3.10) After placing all standoff balls. The machine continue to bond wires.,2nd Bond(wedge),Device1,Device2,Device1,15,PPT學(xué)習(xí)交流,Bump ball formation for BSOB/BBOS,MOTION,BO,LB,BT,SC,Normal LB BO BT Scrub,Flat LB BO BT Scrub=0,CONE LB BO BT=LB Scrub=0,LB,BO,BT,LB,BO,The bump bal

12、l formation process is almost like bonding a normal wire, including 1st bond, looping and 2nd bond parameters.,16,PPT學(xué)習(xí)交流,4.0) PARAMETER DEFINITION IN STAND OFF BALL CONTROL MENU,4.1) Loop Base This parameter determines the loop level of the bondhead which should be sufficient to avoid the ball. Ran

13、ge: Loop Base 0 5 Setting : 2 4.2) Ball Offset This setting controls the distance of the table move in order to offset the capillary from the standoff ball. Negative value can be moved towards to the first bond. Positive value can be moved away from the first bond. Range: Ball Offset - 40 20 Setting

14、 : - ve 35,17,PPT學(xué)習(xí)交流,4.4) Scrub Distance This setting controls the capillary moves horizontally with a Scrub amplitude to weaken the wire at neck. It is always away from the first bond. Range: Scrub Dist 4 12 Setting : 8 4.5) Tail Length This setting controls the length of the tail where the bondhe

15、ad rises to the preset height before the wire clamp is closed. Range : Tail Length 30 40Setting : 35,4.3) Ball Thickness This parameter refer to the ball thickness which controls the level of the bondhead as it descends to the top of the ball Range: Ball Thickness 0 5Setting : 2,18,PPT學(xué)習(xí)交流,4.6) Time

16、 Base 1/2 This setting controls the bond time applied to the standoff ball control only. Time 1 for the 1st bond and Time 2 for the 2nd bond. 4.7) Power Base 1/2 This setting controls the ultrasonic power applied to the standoff ball control only. Power 1 for the 1st bond and Time 2 for the 2nd bond

17、. 4.8) Force Base 1/2 This setting controls the bonding force applied to the standoff ball control only. Force 1 for the 1st bond and Force 2 for the 2nd bond.,19,PPT學(xué)習(xí)交流,4.9) Standby Power 1/2 This setting controls the power activated when the bonding head reach the search level, to the moment the

18、bond head contacts the bond surface. With the vibration, before contact take place. Bond head will clean up the pad surface and remove water vapor on the pad. This parameter used for the standoff ball control only. 4.10) Contact Time 1/2 Refer to the Contact time 1/2 definition in Bond Parameter men

19、u. But this parameter will be affected on the Standoff ball control only.,20,PPT學(xué)習(xí)交流,4.11) Contact Power 1/2 Refer to the Contact Power 1/2 definition in Bond Parameter menu. But this parameter will be affected on the Standoff ball control only. 4.12) Contact Force 1/2 Refer to the Contact Force 1/2

20、 definition in Bond Parameter menu. But this parameter will be affected on the Standoff ball control only.,21,PPT學(xué)習(xí)交流,Figure 4 : Standoff Ball Control Parameter Display(page 2),5.0 BSOB WIRE PARAMETERS,22,PPT學(xué)習(xí)交流,5.1) Wire Offset In -Menu This is the offset parameter that is required to ensure maxim

21、um contact area between the stitch bond and ball. It is always away from the first bond. Range: Wire Offset 10 30 Recommended setting = 25,5.2) Second Bond Search Speed This Parameter controls the impact for stitch on ball. Range: Search Speed 2 32 256 Recommended setting = 32,2nd Bond Wedge,Stand O

22、ff Ball,Capillary position during stitch bond,23,PPT學(xué)習(xí)交流,5.3) Time Base 1/2 This setting controls the bond time applied to the device. Time 1 for the 1st bond and Time 2 for the 2nd bond. 5.4) Power Base 1/2 This setting controls the ultrasonic power applied to the device. Power 1 for the 1st bond and Time 2 for the 2nd bond. 5.5) Force Base 1/2 This setting controls the bonding force applied to the device. Force 1 for the 1st bond