12.ZnO納米材料的應(yīng)用與模擬納米半導(dǎo)體材料提綱ZnO納米器件前言光電器件力電器件生物傳感器件多重耦合效應(yīng)場(chǎng)發(fā)射器件電子器件ZnO納米材料與器件的理論模擬1.1前言纖鋅礦結(jié)構(gòu)氧化鋅是一種獨(dú)特的具有壓電特性的寬禁帶半導(dǎo)體材料，使一維納米氧化鋅成為一維納米材料中最令人矚目的熱點(diǎn)。高激子束縛能保證了氧化鋅具有高效的光發(fā)射性能，從而被應(yīng)用于室溫紫外激光發(fā)射器和發(fā)光二極管等領(lǐng)域；形態(tài)豐富“長(zhǎng)徑比大”尖端尖銳使一維氧化鋅納米材料成為最重要的場(chǎng)發(fā)射材料；寬禁帶、高擊穿強(qiáng)度和飽和電子遷移率，使氧化鋅具有優(yōu)秀的電性能，從而被應(yīng)用于高性能晶體管以及染料敏化太陽(yáng)能電池的光陽(yáng)極等領(lǐng)域；而纖鋅礦晶體結(jié)構(gòu)缺乏對(duì)稱中心，再加上很好的機(jī)電耦合能力，使得氧化鋅具有優(yōu)越的壓電、熱電性能，從而被應(yīng)用于納米發(fā)電和傳感器等領(lǐng)域。在過(guò)去十多年的研究中，一維氧化鋅納米材料在激光及發(fā)光器件、光伏器件、場(chǎng)發(fā)射器件、傳感器件等方面取得了巨大的應(yīng)用成果。Uniqueoptical,acousticandelectronicproperties透明導(dǎo)電涂層聲-光器件聲表面波器件激光二極管納米激光器太陽(yáng)能電池發(fā)光二極管光控開(kāi)關(guān)紫外傳感器光學(xué)波導(dǎo)管納米氧化鋅的應(yīng)用1.2光電器件Self-poweredUVDetectorsElectronIlluminationDetectorZnONWAs/GaNHeterojunctionSingleZnONWBasedLEDDSSCZnO/PEDOTHybridLDSEMimagesofZnONWarrayandcross-sectionofZnO/GaNhybridstructureMOCVDdepositGaNfilmsapphireGaNfilm(2μm)ZnONWsPVDdepositionSputterITOfilm-+MakeconnectionbeadsPMMAspinonZnONWsPMMAXiaomeiZhang,YueZhang,etal.,Adv.Mater.,21:2767(2009)a）

藍(lán)光LED：制備a）

藍(lán)光LED：性能XiaomeiZhang,YueZhang,etal.,Adv.Mater.,21:2767(2009)10V15V20V25V30V35VQiZhang,YueZhang,etal.,Appl.Phys.Lett.,101,043119,2012b）電致激光器:ZnO線/PEDOT:PSSOpticalimageofthep-nheterostructureandI-VcharacteristicsNear-ultravioletlasingbasedonwhispering-gallerymodeQiZhang,YueZhang,etal.,Appl.Phys.Lett.,101,043119,2012b）電致激光器:ZnO線/PEDOT:PSSELspectraofthehybriddeviceunderdifferentinjectioncurrentandcameraimageYaYang,YueZhangetal.Appl.Phys.Lett.,97:223113(2010)Switchrate:22[(Ilight-Idark)/Idark]Responsetime<100ms.

Therecombinationrateoftheelectron-holepairsintheSchottkybarrierisdepressedduetoSbdoping.c）基于Sb摻雜ZnO納米帶的自驅(qū)動(dòng)UV探測(cè)器Δφ=30meVSensitivity:892at30VSensitivity:475at0Vτ1:5.8s；τ2:78s，Increaseoftheconcentrationofelectronsanddecreaseofφ.ZhimingBai,XiaoqinYan,YueZhangetal.Curr.Appl.Phys.2012,inPressd）基于ZnO納米棒陣列的自驅(qū)動(dòng)UV探測(cè)器LocalizedUVirradiationcanmodulateelectricaltransportproperties.SchottkytypeperformsbetterbecauseoflowdarkcurrentandSBHreduction.WenhuaWang,YueZhangetal.Submittede）ZnO納米四腳針探測(cè)局域UV光FangYi,etal.Semicond.Sci.Technol.28(2013)XinLi,etal.,Appl.Phys.Lett.102,221103(2013)f）UV電致發(fā)光中的飽和現(xiàn)象XinLi,etal.,Appl.Phys.Lett.102,221103(2013)低注入電流區(qū)的指數(shù)m=1.16表明幅射復(fù)合率比非幅射復(fù)合率高；高注入電流區(qū)的指數(shù)m=0.72表明幅射復(fù)合的飽和和電光轉(zhuǎn)換效率的降低?；诩{米ZnO陣列光陽(yáng)極的DSSC原理圖g）ZnO納米光陽(yáng)極染料敏化太陽(yáng)能電池1.3力電器件Wurtzitecrystalswithnon-centralsymmetricstructure,naturallyproducingapiezoelectriceffectToleratealargemechanicalstrainEasyfabricationonanyshapeofsubstratesStructuralmodelofwurtziteZnO.Indevices,twotypicaleffectsmayaffectthecarriertransportprocess:Piezo-resistanceeffect:acommonfeatureduetothechangeinbandgapandcarrierdensity,etc.Piezo-electriceffect:non-centralsymmetryPE-FETPiezoelectricSchottkyDiodePiezotronicStrainsSensorPiezoelectricSwitchPCCP,12:12415(2010);PCCP,12:14868(2010);APL,97:223117(2010);Phys.StatusSolidiRRL,3:269(2009);APL,96:093107(2010);APL,97:263118(2010)PiezoresistancestrainsensorBendingSchottkydiodes(2110)--a)Transversepiezoelectricfield-effecttransistor

a)Transversepiezoelectricfield-effecttransistorThesource-to-draincurrentwasfoundtodecreasewithincreasingloadingforce;Themechanism：thecarrier-trappingeffectandthecreationofacharge-depletionzoneduetothepiezo-electriceffect;Thesedevicescanbeusedtodetectthenano-Newtonforcesrangingfrom0to700nN,whichcouldsupporttheapplicationinnano-electromechanicalsystems.

b)壓電子肖特基二極管TuningofelectronictransportcharacteristicsofZnONWpiezotronicSchottkydiodesbybendingTheoverallI-Vshapeinlongitudinalelectricaltransportwasretained,butthresholdvoltageincreasedfrom1Vto8VTheelectrontrappinge?ectincreasestheresistancewhichresultsintheincreaseoftheidealityfactorsandthethresholdvoltages.WenGuo,YueZhangetal,Phys.Chem.Chem.Phys.,

12:14868(2010)c）單要ZnO線的應(yīng)變傳感器YaYang,YueZhangetal.,Phys.StatusSolidiRRL,3:269(2009)TheresistanceofsingleZnOwiresdecreasesasthetensilestrainsincreasing.Themechanismisattributedtobothpiezoelectricandpiezoresistanceeffects.YaYang,YueZhangetal.,Appl.Phys.Lett.,97:223107(2010)d)Sb摻雜ZnO納米帶壓電應(yīng)變傳感器Theresistancedecreaseswithincreasingcompressedstrains.Thelongitudinalpiezoresistancecoefficientisabout350.Thefabricatedsensorcanbeusedtodetectthestrainsinasignaturepen.e)StrainsenorbasedonaZnO/PEDOT:PSSZengzeWang,RCSAdv.,2013e)StrainsenorbasedonaZnO/PEDOT:PSSZengzeWang,RCSAdv.,2013f)AsymmetricbehaviorinpiezoelectricstrainsensorsB.Wang,Y.S.Gu,etal.,JNN,2013Asymmetricbehaviorwasobservedinpiezoelectricstrainsensorsonflexiblesubstrate.ItisduetothebendingoftheZnOnanowireduringcompression.y05μmRLIVL+-300nmWang&Song,Science,312(2006)242g）基于ZnO納米線的納米發(fā)電機(jī)CollSurfB,82,168,2011;JNN12,513–518,2012;CollSurfA,361,169,2010;Nanoscale,2012,4,6415-6418LacticacidBiosensor1.4納米生物傳感器電化學(xué)式傳感器CollSurfB,82,168,2011;JNN12,513–518,2012;CollSurfA,361,169,2010;Nanoscale,2012,4,6415-6418GlucoseBiosensorsUricAcidBiosensor1.4納米生物傳感器電化學(xué)式傳感器1.4納米生物傳感器CollSurfB,82,168,2011;JNN12,513–518,2012;CollSurfA,361,169,2010;Nanoscale,2012,4,6415-6418基于FET的ZnO尿酸傳感器1.4納米生物傳感器CollSurfB,82,168,2011;JNN12,513–518,2012;CollSurfA,361,169,2010;Nanoscale,2012,4,6415-6418ZnO-HEMTforUricAcidrGO-HEMTforDNA基于HEMT的ZnO尿酸傳感器Appl.Phys.Lett.,2012,101,043119;1.5多重耦合效應(yīng)應(yīng)變引起了LED外量子效率的增強(qiáng)Appl.Phys.Express,

2012,5,0611011.5多重耦合效應(yīng)應(yīng)變引起了UV探測(cè)器靈敏度的增強(qiáng)1.6場(chǎng)發(fā)射器件大面積納米ZnO陣列強(qiáng)流場(chǎng)發(fā)射冷陰極直線感應(yīng)加速器用于原位記錄爆轟圖像，分析爆轟效果。陰極為加速器提供穩(wěn)定的強(qiáng)流電子束。Carbon,2007,

45:14715水熱合成法制備的大面積納米ZnO陣列陰極及其發(fā)射特性J.

Phys.

D:

Appl.

Phys.2007,

40:3456;6626納米ZnO陣列冷陰極在直線感應(yīng)加速器上得到使用。在100ns級(jí)脈沖電場(chǎng)中最高發(fā)射電流達(dá)132A/cm2，目前報(bào)道的最高電流為30A/cm2。Appl.Phys.Lett.93,133101(2008)利用并五苯薄膜(厚度30nm)、單根ZnO納米線(直徑60nm)和AFM針尖構(gòu)建了反向雙二極管雙二極管的電輸運(yùn)特性表明該雙二極管可用于交流電限幅器AFMtip(PtIr)1.7電子器件單根ZnO納米線反向雙二極管2.納米材料與器件的理論模擬Cu/ZnO/Cu納米結(jié)構(gòu)的電輸運(yùn)性質(zhì)ZnO納米器件的性能模擬X.Sun,Y.S.Gu,etal.,PCCP,2013