TFT制程簡介說明For:NBLCMF.A.TeamAuthor:Jessica_LinDate:2009/1/81.TFT制程簡介說明For:NBLCMF.A.Team目錄:TFT制作流程圖TFT制作過程說明TFT五層制程說明TFT的制作類型TFT的工作原理補充說明:1.實際顯微鏡下的比對2.TFT-LCD的工作說明其它…2.目錄:TFT制作流程圖2.TFT制作流程圖:PreCleanThinFilmDeposition1.Macro-Inspection2.MonitorPRcoatingExposureDeveloping1.ADI2.CDmeasurement3.AOIDryorWetEtchingResiststripping1.AEI2.CDmeasurement3.Etchratemonitor4.AOIPreClean1.Testkey2.Functiontest3.LaserrepairPhotoProcessThinFilmProcessEtchingProcessFinaltesting3.TFT制作流程圖:PreCleanThinFilmDepTFT制程區(qū)域劃分:薄膜區(qū)--各層之薄膜成長黃光區(qū)--曝光.顯影蝕刻區(qū)--圖案成形及去光阻測試區(qū)--array及外部電路之檢查Equipment:

PlasmaCVD,Sputter-----薄膜Nikonstepper,Canonscaner----黃光Dry,WetEtching----蝕刻4.TFT制程區(qū)域劃分:薄膜區(qū)--各層之薄膜成長EquipmenTFT制作流程說明:黃光前洗凈PRCoating曝光顯影蝕刻去除光阻檢查薄膜沉積循環(huán)制程只有單一層次說明:5.TFT制作流程說明:黃光前洗凈PRCoating曝TFTSubstrate1)GateMetal(AlNd

\MoN)

鍍上MoN(氮化鉬),Al+3%Nd(GATE)2)GIN(SiNx

\a-Si

\n+a-Si)G:GateSiNx(氮硅化合物,絕緣層)I:a-Si(非結(jié)晶硅,通道層)N:N+(高濃度磷(PH3)的硅)降低界面電位差,使成為奧姆接觸(Omiccontact)

3)S/DMetal(Mo

\Al\Mo)

鍍上鍍上MoN(氮化鉬),pureAl(source,drain)4)Passivation(SiNx)鍍上保護層(把金屬部份蓋住)5)ITO(Indium-Tin-Oxide)鍍上ITO(銦銻氧化物,畫素電極)6.TFTSubstrate1)GateMetalTFTLayers五層結(jié)構(gòu)圖GateGlassSubstratea-SiGatemetalLayer-1Insulator(G-SiNx)Layer-2n+a-SiS/DmetalLayer-3S/DmetalLayer-3PassivationLayer-4ITOLayer-5PassivationLayer-4SourceDrain7.TFTLayers五層結(jié)構(gòu)圖GateGlassSubsTFT制作流程圖:Initialclean初始清洗Metal1DepositionGate薄膜沈積Pre-Depclean沈積前清洗Pre-Photoclean光阻被覆/曝光/顯影Metal1photoLayer1黃光制程WetetchLayer1蝕刻PRstrip去除光阻Pre-depclean沈積前預洗G-I-NDepositionG-I-N薄膜沈積ADICD顯影后CD量測CDLoss蝕刻后CDLoss量測MarcoInspection強光檢查INphotoIN黃光制程ADICD顯影后CD量測INetchIN蝕刻MarcoInspection強光檢查Layer-1Layer-28.TFT制作流程圖:InitialcleanMetal1TFT制作流程圖:PRstrip去除光阻MarcoInspection強光檢查Pre-Depclean沈積前預洗S/DsputterS/D薄膜沈積MarcoInspection強光檢查S/DphotoS/D黃光ADICD顯影后CD量測S/DetchS/D蝕刻BAKE蝕刻前烘烤N+etchchannel蝕刻PRstrip去除光阻SurfaceconditionS/DCDLoss量測Pass.CVD護層沈積MarcoInspection強光檢查Pass.photo護層黃光ADICD顯影后CD量測Layer-2Layer-3Layer-49.TFT制作流程圖:PRstripMarcoInspecTFT制作流程圖:Pass.etch護層蝕刻PRstrip去除光阻ITOSputterITO薄膜沈積MarcoInspection強光檢查ITO.photoITO黃光ADICD顯影后CD量測ITO.etchITO蝕刻PRstrip去除光阻ITOspaceCDLossITOCDLoss量測FinalAnneal回火TEG電性量測ArraytestArray測試LaserRepair雷射修護Layer-4Layer-5Test10.TFT制作流程圖:Pass.etchPRstripITO說明CsongateCst金屬不透光區(qū)BM遮進來的區(qū)域ITO電極區(qū)

能夠控制液晶分子排列的區(qū)域A.R.=65%顯微鏡下的DOT等效電路圖:11.說明CsongateCst金屬不透光區(qū)BM遮進來的區(qū)域說明CsoncommonBM遮進來的區(qū)域ITO電極區(qū)

能夠控制液晶分子排列的區(qū)域Cst金屬不透光區(qū)A.R.=61%等效電路圖:顯微鏡下的DOT12.說明CsoncommonBM遮進來的區(qū)域ITO電極區(qū)CsTFTDevice原件動作原理:視為一個開關組件GDSGDSGDSONOFFi)在閘極給予適當之電壓:Vgs>Vth使信道感應出電子,由源極(S)導通至汲極(D)ii)當閘極之電壓Vgs<Vth則感應不出電子,使得信道形成斷路VgsVth13.TFTDevice原件動作原理:視為一個開關組件GDSGTFT-LCD剖面圖14.TFT-LCD剖面圖14.整塊Panel的動作說明:ITO透明導電極CS儲存電容Gate-Bus-LineData-Bus-Line15.整塊Panel的動作說明:ITOCS儲存電容Gate-BPanel外觀說明:PCBA-XPCBA-YS-TABG-TABSDataLineGScanLine

DOT顯示區(qū)域Fornt-RepairLineBack-RepairLine16.Panel外觀說明:PCBA-XPS-TABG-TABSGPanel顯微鏡下比對:上半部S-TABS-OLB-LeadS-Data-Line17.Panel顯微鏡下比對:上半部S-TABS-OLB-LeadPanel顯微鏡下比對:下半部F-R.L.F-ESD-ProtectDOTAREAB-ESD-ProtectB-R.L.R.L.18.Panel顯微鏡下比對:下半部F-R.L.F-ESD-Pro其它:MTSP:MetalSputter(金屬層濺鍍)CVDA:AKTCVD(絕緣層鍍膜)CVDB:BPSCVD(絕緣層鍍膜)ITSP:ITOSputter(ITO層濺鍍)薄膜設備代碼:TLCD:TelCoater/Develop(光阻被覆/顯影)NIKN:Nikonexposure(曝光)黃光設備代碼:CANO:Canonexposure(曝光)WETX:Wetetch(濕式蝕刻)STRP:Stripper(光阻去除)蝕刻設備代碼:DRYT:TelDryetch(干式蝕刻)DRYP:PSCDryetch(干式蝕刻)AOIH:AutoOpticalInspectionHighResolutionSUFS:SurfaceScan檢驗設備代碼:AOIL:AutoOpticalInspectionLowResolutionADSI:AfterDevelop/StripinspectionSUFP:SurfaceProfileNANO:NANOmeterELIP:Ellipsometer19.其它:MTSP:MetalSputter(金屬層濺鍍THEEDNTHANKSFORYOURATTENDANCE20.THEEDNTHANKSFOR20.TFT制程簡介說明For:NBLCMF.A.TeamAuthor:Jessica_LinDate:2009/1/821.TFT制程簡介說明For:NBLCMF.A.Team目錄:TFT制作流程圖TFT制作過程說明TFT五層制程說明TFT的制作類型TFT的工作原理補充說明:1.實際顯微鏡下的比對2.TFT-LCD的工作說明其它…22.目錄:TFT制作流程圖2.TFT制作流程圖:PreCleanThinFilmDeposition1.Macro-Inspection2.MonitorPRcoatingExposureDeveloping1.ADI2.CDmeasurement3.AOIDryorWetEtchingResiststripping1.AEI2.CDmeasurement3.Etchratemonitor4.AOIPreClean1.Testkey2.Functiontest3.LaserrepairPhotoProcessThinFilmProcessEtchingProcessFinaltesting23.TFT制作流程圖:PreCleanThinFilmDepTFT制程區(qū)域劃分:薄膜區(qū)--各層之薄膜成長黃光區(qū)--曝光.顯影蝕刻區(qū)--圖案成形及去光阻測試區(qū)--array及外部電路之檢查Equipment:

PlasmaCVD,Sputter-----薄膜Nikonstepper,Canonscaner----黃光Dry,WetEtching----蝕刻24.TFT制程區(qū)域劃分:薄膜區(qū)--各層之薄膜成長EquipmenTFT制作流程說明:黃光前洗凈PRCoating曝光顯影蝕刻去除光阻檢查薄膜沉積循環(huán)制程只有單一層次說明:25.TFT制作流程說明:黃光前洗凈PRCoating曝TFTSubstrate1)GateMetal(AlNd

\MoN)

鍍上MoN(氮化鉬),Al+3%Nd(GATE)2)GIN(SiNx

\a-Si

\n+a-Si)G:GateSiNx(氮硅化合物,絕緣層)I:a-Si(非結(jié)晶硅,通道層)N:N+(高濃度磷(PH3)的硅)降低界面電位差,使成為奧姆接觸(Omiccontact)

3)S/DMetal(Mo

\Al\Mo)

鍍上鍍上MoN(氮化鉬),pureAl(source,drain)4)Passivation(SiNx)鍍上保護層(把金屬部份蓋住)5)ITO(Indium-Tin-Oxide)鍍上ITO(銦銻氧化物,畫素電極)26.TFTSubstrate1)GateMetalTFTLayers五層結(jié)構(gòu)圖GateGlassSubstratea-SiGatemetalLayer-1Insulator(G-SiNx)Layer-2n+a-SiS/DmetalLayer-3S/DmetalLayer-3PassivationLayer-4ITOLayer-5PassivationLayer-4SourceDrain27.TFTLayers五層結(jié)構(gòu)圖GateGlassSubsTFT制作流程圖:Initialclean初始清洗Metal1DepositionGate薄膜沈積Pre-Depclean沈積前清洗Pre-Photoclean光阻被覆/曝光/顯影Metal1photoLayer1黃光制程WetetchLayer1蝕刻PRstrip去除光阻Pre-depclean沈積前預洗G-I-NDepositionG-I-N薄膜沈積ADICD顯影后CD量測CDLoss蝕刻后CDLoss量測MarcoInspection強光檢查INphotoIN黃光制程ADICD顯影后CD量測INetchIN蝕刻MarcoInspection強光檢查Layer-1Layer-228.TFT制作流程圖:InitialcleanMetal1TFT制作流程圖:PRstrip去除光阻MarcoInspection強光檢查Pre-Depclean沈積前預洗S/DsputterS/D薄膜沈積MarcoInspection強光檢查S/DphotoS/D黃光ADICD顯影后CD量測S/DetchS/D蝕刻BAKE蝕刻前烘烤N+etchchannel蝕刻PRstrip去除光阻SurfaceconditionS/DCDLoss量測Pass.CVD護層沈積MarcoInspection強光檢查Pass.photo護層黃光ADICD顯影后CD量測Layer-2Layer-3Layer-429.TFT制作流程圖:PRstripMarcoInspecTFT制作流程圖:Pass.etch護層蝕刻PRstrip去除光阻ITOSputterITO薄膜沈積MarcoInspection強光檢查ITO.photoITO黃光ADICD顯影后CD量測ITO.etchITO蝕刻PRstrip去除光阻ITOspaceCDLossITOCDLoss量測FinalAnneal回火TEG電性量測ArraytestArray測試LaserRepair雷射修護Layer-4Layer-5Test30.TFT制作流程圖:Pass.etchPRstripITO說明CsongateCst金屬不透光區(qū)BM遮進來的區(qū)域ITO電極區(qū)

能夠控制液晶分子排列的區(qū)域A.R.=65%顯微鏡下的DOT等效電路圖:31.說明CsongateCst金屬不透光區(qū)BM遮進來的區(qū)域說明CsoncommonBM遮進來的區(qū)域ITO電極區(qū)

能夠控制液晶分子排列的區(qū)域Cst金屬不透光區(qū)A.R.=61%等效電路圖:顯微鏡下的DOT32.說明CsoncommonBM遮進來的區(qū)域ITO電極區(qū)CsTFTDevice原件動作原理:視為一個開關組件GDSGDSGDSONOFFi)在閘極給予適當之電壓:Vgs>Vth使信道感應出電子,由源極(S)導通至汲極(D)ii)當閘極之電壓Vgs<Vth則感應不出電子,使得信道形成斷路VgsVth33.TFTDevice原件動作原理:視為一個開關組件GDSGTFT-LCD剖面圖34.TFT-LCD剖面圖14.整塊Panel的動作說明:ITO透明導電極CS儲存電容Gate-Bus-LineData-Bus-Line35.整塊Panel的動作說明:ITOCS儲存電容Gate-BPanel外觀說明:PCBA-XPCBA-YS-TABG-TABSDataLineGScanLine

DOT顯示區(qū)域Fornt-RepairLineBack-RepairLine36.Panel外觀說明