ReportfromtheExtremeUltraviolet(EUV)LithographyWorkingGroupMeeting:CurrentState,Needs,andPathVersion

ReportfromtheExtremeUltraviolet(EUV)LithographyWorkingGroupMeeting:CurrentState,Needs,andPathVersionAugust

極紫外（EUV）光刻工作組會(huì)議報(bào)20238ThisisthereportofahybridworkinggroupmeetingheldonApril25,2023,attheNationalInstituteofStandardsandTechnology(NIST)inBoulder,CO.Theworkinggroupwasfocusedonextremeultravioletlithography(EUVL)research,development,andmanufacturing.ThemeetingallowedforproductivediscussionsonmanytechnicalaspectsofEUVL.Industryparticipantsgavepresentationsthathelpedinformthisreport'soutlineofthecurrentstateofthescience,challenges,needs,andfutureopportunitiesforacceleratedinnovationinEUVL.ThereportalsoincludesinformationonsomeofNIST’seffortsthatcouldbeginorcontinuetosupporttheUSAsemiconductorindustry.CohesivelypresentingsomeofNIST’sresearchandcapabilitiesattheworkinggroupmeetingprovidedexternalstakeholdersvisibilityandtheopportunitytocomment.ThemeetingwasinsightfulforindustryparticipantslearningaboutNIST’sresearchcapabilities.Inturn,NISTresearchersgainedadeeperunderstandingoftheindustry'sneedstoidentifywhereNIST’smetrologyexpertisecouldassistinEUVLresearch.Themeetingandthisreportdonot,andarenotintendedto,capturetheentireperspectiveoftheEUVLindustrybutratherserveasadiscussionstartingpoint.Futureworkincludesexpandingparticipation,honingNISTresearchsub-groupstospecificneedsofEUVL,andexecutingpriorityresearchdiscussedintheworkinggroupmeetingoranyfuturemeetings.ThroughengagementwiththeUSAEUVLindustry,targetedresearchcollaborationsarehopedtobecreated,acceleratingsemiconductormanufacturinginnovationandgeneratingmeaningfulvalueforUSAtaxpayers.AdvancedManufacturing;Chips;DomesticManufacturing;ExtremeUltravioletLithography(EUVL);Semiconductor;StakeholderCollaboration.

2023425（NIST）舉行的混合工作組會(huì)議的報(bào)告。該工作組專注于極紫外光刻（EUVL）的研究、開發(fā)和制EUVLEUVLNISTNISTNISTNISTNISTEUVLEUVLNISTEUVL的具體需求進(jìn)行優(yōu)化，以及執(zhí)行工作組會(huì)議或任何未來會(huì)議中討論的優(yōu)先級(jí)研究。EUVL行業(yè)的互動(dòng)，希望創(chuàng)建有針對(duì)性的研究合作，加速半導(dǎo)體制造創(chuàng)新，并先進(jìn)制造業(yè)；芯片；國(guó)內(nèi)制造業(yè)；極紫外光刻（EUVL）；TableofExecutive TechnicalAspectsof Photoresists:Polymer EUVCollectorMirrors:Tinions,vapor,andparticle

EUVEUV

High-harmonicgeneration Synchrotron:NIST’sSURF AtomProbeTomography Findingsand

同步輻射：NISTSURF Findingsand Appendix Listof SpeakerBiographical

附錄 發(fā)言人名單

Appendix ListofAcronyms Appendix Listof Appendix WorkingGroupMeeting

附錄 工作組會(huì)議議程

ListofTable1.SynchrotronbeamlinesatNIST’sSURFIIIcurrentcapabilitiesandfuture ListofFig.1.PhotographofanASMLEUVLassembly.ImageSource:[5],Photograph:

NIST的SURFIII上的tron光束線當(dāng)前能力和未來計(jì)劃 ofanASMLEUVLassembly.ImageSource:[5],Photograph: Fig.2.GraphicofASML’sEUVLithographysourcecomponents.ImageCredit:

2ASMLEUV光刻光源組件的圖形。圖片來源

Fig.3.Schematic(top)andphotograph(bottom)ofatindropletgenerator.ImageCredit: Fig.4.Schematicofthetindropletgeneratorwithinlinerefill.ImageCredit:Purvisetal. Fig.5.SchematicinthespatialdomainofthedropletgeneratorwithdifferentoperatingpressurestoenablehigherEUVpower.ImageCredit:ASML[18] Fig.6.FlowdiagramofhowliquidtinmaterialpropertiescouldassistindropletgeneratoroperationfordatadrivenEUVlithography. Fig.7.Diagramshowing(top)spatialviewand(bottom)temporalviewofthetwo-pulsesystemtoproduceEUVlightinthesemiconductormanufacturingprocess.ImageSource:ASML Fig.8.ExampleofcellsizescalingtrendsforaribbonFETwherecellwidthandcellheightscalingareneeded.ImageCredit:Intel,Gstreinetal.[54] Fig.9.Exampleofhowusingdirectedself-assembly(DSA)inadditiontoEUVphotoresistsimprovessystematicandrandomvariability.ImageSource:Intel Fig.10.Diagramshowinghownewphotoresistsareneededasthenumericalaperture(NA)inEUVLmanufacturingtransitionsfromLow-NAtoHigh-NA,andbeyond.ImageCredit:Intel Fig.11.DiagramshowinghowDSAdoesnotpreservethetargetlayout,sothereisaneedforpitch-independentrectificationofroughnessanddefects.ImageCredit:Intel Fig.12.DiagramshowingtheconceptofEUVcollectedwithnear-normalincidencemultilayermirror.ImageCredit:Versolanto Fig.13.OutputspectrumofthephotonenergiesfromtheNISThigh-harmonicgenerationsourcewiththelocationofseveralatomiccoreleveltransitionsinrelevant Fig.14.PhotographofanHHGsourceandinstrumentsattachedtoitat Fig.15.A40GHzsignalonasamplingoscilloscope.Thetriggerpulse(red)camefromthepulseusedintheHHGsystem,directlyshowingthesynchronizationoftheHHGandthe40GHz Fig.16.Exampleof3Dnanoscalecharacterizationofdopantprofilesusingacombinedreflectometryandptychographytechnique.ImagefromTanksalvalaetal. Fig.17.SynchrotronRadiationSpectrumemittedbySURFat416MeV,380MeV,331MeV,284MeV,234MeV,183MeV,134MeV,and78MeVincomparisontoa3000Kblackbodyandadeuteriumlamp. Fig.18.Atomprobetomography(APT)(top)schematicoftheoperation(bottom)photographoftheAPTlocatedatNISTinBoulder,CO.ImageSources:

圖3.鉛滴生成器的原理圖（頂部）和照片（底部）。圖片來源：ASML 圖5.在空間域中，具有不同工作壓力的液滴發(fā)生器示意圖，以實(shí)現(xiàn)更高的EUV功率。圖片來源：ASML[18] 數(shù)據(jù)驅(qū)動(dòng)EUV光刻 在半導(dǎo)體制造過程中產(chǎn)生極紫外光。圖片來源 圖8.帶狀FET中單元尺寸縮放趨勢(shì)的示例，其中需要縮放單元寬度和單元高度。圖片來源：Intel，Gstrein等人[54]9（DSA）技術(shù)結(jié)合EUV10（EUVL）中數(shù)值孔徑（NA）從低NA到高NA，乃至更高NA的制造轉(zhuǎn)型。圖片來源：英特 圖11.顯示DSA12EUVVersolanto[46]13NIST14NISTHHG1540GHz信號(hào)。觸發(fā)脈沖（紅色）HHGHHG40GHz信號(hào)23163DTanksalvala[63].17SURF416MeV380MeV331MeV284MeV234MeV183MeV134MeV78MeV3000K圖18.原子探針斷層掃描（APT）的原理示意圖（底部）和位于科羅拉多州博爾德的NIST的APT源：NIST.26TheauthorsthankallparticipantsoftheApril2023extremeultraviolet(EUV)lithographyworkinggroupmeeting.AcompletelistofspeakersandattendeesisprovidedinAppendixA.Specialthanksareextendedtothemembersoftheplanningcommitteelistedbelow.ThecommitteewasresponsibleforallessentialgroundworkfortheeventandthecontentsofthisPresentationsfrominvitedspeakersandpaneldiscussionsattheworkshopprovidedthefoundationforthisreport.Withouttheenthusiasticparticipationofallworkshopattendees,thisreportwouldnothavebeenpossible.ManythanksarealsoduetotheconferencesupportstaffofNIST,especiallyAndrewUribe,WendiCopello,MichelleSlone,BenjaminJeanette,andJosephNastus,whoensuredthemeetinglogisticswerehandledwithexcellenceandefficiency.Specialthanksarealsoduetoourtoursponsors,JustinShaw,andBrianSimonds,whoopenedtheirlaboratorydoorsforattendeestoexperienceasafeandinformativetour.JosephKlineofNISTalsoprovidedstrongcounselregardingtheworkinggroupmeetinglogisticsandscope,whichwasgreatlyappreciated.Lastly,manythankstoourpanelmembers,panelmoderators,andvolunteerrapporteurs,whoarelistedonthetitlepagesofeachoftheworkshoppanelsections.AuthorElizabethRasmussen:Conceptualization,Visualization,Supervision,Projectadministration,Writing-Originaldraftpreparation,Writing-ReviewingandEditing;BorisWilthan:Writing-ReviewingandEditing;BrianSimonds:Writing-ReviewingandEditing.

20234（EUV）光刻工作組會(huì)議的所有參與者。發(fā)言人及與A。特別感謝以下籌備委員會(huì)成員。該委員會(huì)負(fù)責(zé)本次會(huì)議的所有基受邀演講者的工作坊發(fā)言及小組討論為本報(bào)告奠定了基礎(chǔ)。沒有所有工作坊參與者的NISTAndrewUribeWendiCopelloMichelleSloneBenjaminJeanetteJosephNastus，他們確JustinShawBrianSimonds，他們?yōu)榕c會(huì)者提供了安全且富有信息的參觀體驗(yàn)。NISTJosephKlineElizabethRasmussen審閱BorisWilthanBrianSimonds審閱和編輯。ExecutiveOneofthemainadvancementsinsemiconductormanufacturingisusingextremeultraviolet(EUV)light(13.5nmwavelength)forlithography.EUVlightallowssmallerfeaturestobebuiltonasemiconductor,increasingdeviceareadensity.Developingcommercialhigh-throughputEUVinstrumentshascreatedtheabilitytomass-produceadvancedmicrochipsincorporatingnoveltransistordesignsandchiparchitectures.Thiscompetitiveadvantageinmicrochipfabricationhasledtostringentexportcontrolsofthetechnology.Specifically,inOctober2022,theUnitedStatesofAmerica(USA)BureauofIndustryandSecurity(BIS)releasedarule,87FR62186,thatincludesultravioletphotolithographyintheEUVrange(b.2).AworkinggroupmetinApril2023attheNISTBoulder,Coloradocampus.ThemeetingprovidedaspaceforsomekeyU.S.EUVlithographyindustryleaderstopresenttop-prioritytechnicalproblemsandviewsonmetrologyadvancementsneededtostrengthentheU.S.positioninEUVlithographyresearch,development,andmanufacturingtorelevantNISTstaff.Additionally,NISTresearchersillustratedtheircapabilitiesthroughresearchpresentationsandlaboratorytours.Theintentionforthisworkinggroupmeetingwasto(a)provideindustryvisibilitytoNISTresearchersandlaboratorycapabilities;(b)welcomeindustryfeedbackonusefulresearchdirectionsforNISTtosupporttheU.S.semiconductorindustry;(c)avoidparallelprogramsbeingsubmittedto,orfundedby,theCHIPSR&DMetrologyProgrambyNISTscientists;(d)ensureNISTresearchersareawareofsimilaritiesanddifferencesintheirresearchideasandcapabilities;and(e)aidinaligningtheuniquemetrologyskillsetofNISTwithimpactfulproblemsfacingtheU.S.EUVsemiconductorindustry.FivetechnicalEUVLithography(EUVL)topicswerecovered.UnderstandingthecomplexityofeachtopicandhowtheysupporteachotherisvitaltograspingtheEUVLecosystem,thus,theyarebrieflyoutlinedbelow.Industryrecommendationsfromthesefivetopicsareincluded.Inallfivetechnicaltopics,thevalueofexperimentscurrentlyoutweighstheoryorsimulations.However,theoreticaladvancementsthatunderstandunderlyingphysicsisdesiredtobuildpredictivemodels.Suchworkrequiressolidexperimentaldatasupportedbyaccurateandprecisemetrology.NISThasuniqueexperimentalmetrologyskillsetsandtheoreticalsimulationprogramsforEUVL.NISTeffortsshouldbemadetocreateoruseinstrumentsthatprovidethehighestpossibleaccuracydatarelevanttotheEUVLindustry.NISTshouldcontributetophysicsmodelingbyprovidingexpertiseinidentifyingthecodebasethatwillproducethemostaccurateandideallypredictivecapabilitiesfortheindustry.EUVLightSource:Adropletgeneratorinstrumentmustdispensemoltentincontinuouslyandreliably.Thedropletgeneratoristhe‘heartbeatofEUV’asdroplettimingtriggersalaserpulsetocreateEUV

半導(dǎo)體制造的主要進(jìn)展之一是使用極紫外（EUV）光（13.5）進(jìn)行光刻。EUVEUV儀面的競(jìng)爭(zhēng)優(yōu)勢(shì)導(dǎo)致了該技術(shù)的嚴(yán)格出口管制。具體而言，202210（USA）工業(yè)和安全局（BIS）發(fā)布了一項(xiàng)規(guī)則，87FR62186，將紫外光刻（b.2）納入EUVEUV光刻。鍵的美國(guó)EUV光刻行業(yè)領(lǐng)導(dǎo)者提供了一個(gè)空間，讓他們可以提出最優(yōu)先的技術(shù)問題，并就加EUVNIST工作人員匯報(bào)。此外，NIST研究人員通過研究演講和實(shí)驗(yàn)室參觀展示了他們的能力。NISTcNISTCHIPSR&D計(jì)量學(xué)項(xiàng)目資助的平行項(xiàng)目；(d)確保NIST研究人員了解他們研究想法和能力eNISTEUV涵蓋了五個(gè)技術(shù)性的極紫外光刻（EUVL）主題。理解每個(gè)主題的復(fù)雜性以及它們?nèi)绾蜤UVLEUVLNISTEUVLNIST極紫外光源：液滴EUVIndustryRecommendation:Toincreaseperformance,createreference-qualitythermophysicalpropertymeasurementsofpuretinatextremeconditions(>500K,>10MPa)anddisseminatedatainaStandardReferenceData(SRD)format.RadiometryforEUVgeneration:Accuratequantificationofthelaserlightusedtoenergizethemoltentindropletsandofthesubsequentplasma/13.5nmlightemission.

行業(yè)建議：為提高性能，創(chuàng)建純錫在極端條件（>500K>10MPa）下的參考質(zhì)量熱物理性質(zhì)測(cè)量數(shù)據(jù)，并以標(biāo)準(zhǔn)參考數(shù)據(jù)（SRD）格式發(fā)布。用于EUV產(chǎn)生的輻射測(cè)量：精確量化用于激發(fā)熔融錫液滴的激光光以及后續(xù)等離子體/13.5nm光發(fā)射。IndustryRecommendation:Provideatraceabilitychainforalllight(high-powerinfraredlaserandplasmaemission)underconditionsrelevanttoEUVlithography.understandingofthelight/matterinteractionisneeded.IndustryRecommendation:Simulationthatcanachievepredictivecapabilitiesutilizingvalidationandverificationofadvancedcollisional-radiativeandradiationtransportcodes.Experimentsofmodelingwouldgroundcurrentmodels,expandingthegroundworkofcohesionacrossinternationalcodebasestohavea'best'modelselectiongroundedindata-drivenmodels.EUVPhotoresists:WiththeEUVlight,thephotoresistsarecriticaltothepattern,butunderstanding/probingmaterialbehaviorisneededateverylengthscaletoincreaseyield.IndustryRecommendation:Supplychemicalspeciationmeasurementsonprocessvariationsateverylengthscaleandincreasinglyinthreedimensionsforstochasticdefectsinresists.Createhigh-throughputmetrologytocharacterizeprocessvariationamongfeatures.EUVCollectorMirrors:amultilayermirrorthatdirectstheEUVlighttothephotoresisttemplate,yettindebriscausecostlyinefficienciesinproduction.IndustryRecommendation:NISToffersposition-dependentEUVreflectivitymeasurementsforcondenseroptics.Thisdataallowsenduserstoassessopticlifetimesandtheeffectivenessoftindebrismitigationtechniques.Industryhasmethodstosupportdomesticinterests,butNISTscientificandmanagementleadersshouldunderstandhowtoalignanynewintellectualpropertyaccordingly.Establishedmethodsforcontrolleddissemination,likecooperativeresearchanddevelopmentagreements(CRADAs)aswellasdisseminationsasStandardReferenceData(SRD)andStandardReferenceMaterials(SRM)shouldbeconsidered.ThetwoprogrammaticfindingsandsubsequentrecommendationsintheworkinggroupmeetingTheinternationallycompetitivelandscapeofEUVLleadstonon-disclosureagreements(NDAs)beingrequiredtohavedeeptechnicalconversationswithNISTresearchers.ArecommendationwastostreamlinetheNDAprocessbetweenNISTresearchersandtheindustryforaturnaroundoftwomonthsfromtheprojectinitiation.EducationshouldbegiventoNISTstaffandmanagementabouttheNDAprocesstoexecutestepscorrectly.In-personinteractionsyieldproductiveconversationsandactionablenextsteps.Futurestakeholderinteractionscouldtransitionfromworkinggroupmeetingstoworkshopstoconsortiums,yetthistransitionleadstoincreasedcost($10k-$100k+)andplanningeffort(40–200+hours).Tohelpmitigatecostandeffort,futureeventscouldoccuratcommonlyattendedprofessionalconferences.PossiblefutureactionsbytheworkinggroupincludeexpandingNISTandindustryparticipation,intheworkinggroupmeetingandanylargerfuturemeetings.ThroughengagementwiththeUSAEUVLindustry,itisenvisionedthatcollaborationsarefueled,andsemiconductormanufacturinginnovationisaccelerated,thuscreatingmeaningfulvalueforUSAtaxpayers.

行業(yè)建議：為所有與EUV光刻相關(guān)的光（高功率紅外激光和等離子體發(fā)射）提供可追溯性EUV等離子體物理與建模：一旦激EUV光刻膠：在EUVEUV收集鏡：一種多層鏡，將EUV行業(yè)建議：NISTEUV標(biāo)準(zhǔn)參考數(shù)據(jù)（SRD）和標(biāo)準(zhǔn)參考材料（SRM）的傳播。EUVLNIST研究人員進(jìn)行深入技術(shù)對(duì)話時(shí)需要保密協(xié)議（NDAs）NISTNDAs流程，從項(xiàng)目啟動(dòng)到完成的時(shí)間NISTNDAs流程的教育，以正確執(zhí)行步驟。2加（10k?100k+）和規(guī)劃工作量的增加（40–200+小時(shí)）。為了幫助緩解成本和工NISTEUVL的特定USAEUVL行業(yè)USA納稅人創(chuàng)造有意義的價(jià)值。 In2022themarketsizeforsemiconductorswasabout$0.6tn,whichbusinessanalystsexpectedtodoubletobetween$1.0tnand$1.3tnby2030[1,2].Alargeareaofgrowthinsemiconductormanufacturingcanbefoundinthelithographyprocess.Lithographyisapatterningprocesswhereaplanardesignistransferredtothesurfaceofawafersubstrate,creatingcomplexstructuresliketransistorsandwireinterconnects.Thisisdonebyselectivelyexposingalight-sensitivepolymer,orphotoresist,toparticularwavelengthsoflightthroughacomplexmulti-stepprocess[3].Recently,advancesinlithographyhavecreatedacompetitiveadvantageinproducingthemostadvancedsemiconductors,enablingthemostadvancedtechnologieslikeartificialintelligence(AI),5Gtelecommunications,andsupercomputing.Advancedsemiconductorsconsequentlyaffectnationalsecurityandeconomicprosperity[4].Today’smostadvancedsemiconductorlithographyprocessusesanEUVlightsource,specificallylightat13.5nm.EUVlightallowsforsmallerfeaturestobebuiltintoasemiconductor.EUVLsystemscurrentlycostareported$150millionandwerefirstdeployedin2019byASML,whichmaintainsa100%marketshare[5].Todate,ASMLhasshippedthreedifferentEUVLsystemmodels,namelytheTwinscanNXE:3400B/CandNXE:3600D,withthetotalnumberofNXEsystemsshippedgrowingfrom31inthefirstquarterof2019to181inthelastquarterofTheorganizationofthisreportisasfollows.TheremainingpartsoftheintroductionincludeatechnicalbackgroundonEUVL(Sec.1.1),abackgroundontheinternationalanddomesticstateofEUVL(Sec.1.2),andanoverviewofNISTandCHIPSR&Dmetrologyprogram(Sec.1.3).Section2containsthetechnicalstateandneedsofEUVLasdiscussedintheworkinggroupmeeting.Section3concludesthereportbyoutliningtheworkinggroupmeeting’sfindingsandrecommendationsforpathsforward. TechnicalBackgroundonEUVEUVLisakeystepinthefabricationofnext-generationsemiconductorchips.EUVlightisproducedbyahigh-temperatureplasmageneratedfromhigh-puritytin.Solidtinismeltedinsideadropletgeneratorinstrumentthatcontinuouslyproducesover3million27μmliquiddropletsperminuteinavacuumchamber.Apulsed25kWaveragepowercarbondioxide(CO2)laserirradiatesatindropletwithtwosuccessivepulsestoshapeandthenionizethedroplet,respectively.Initially,thousandsofwattsofEUVlightaregenerated,yetonlyasmallfractionmakesittothephotolithographymaskduetoabsorptionandscatteringlossesalongtheopticalpath.Outputpowerandbeamqualityofthe13.5nmlightareinferredfromindirectscintillator-camerameasurements.Asystemofmultilayercollectormirrorsdirectsthelighttoalight-1Certainequipment,instruments,software,ormaterialsareidentifiedinthispaperinordertospecifytheexperimentalprocedureadequately.SuchidentificationisnotintendedtoimplyrecommendationorendorsementofanyproductorservicebyNIST,norisitintendedtoimplythatthematerialsorequipmentidentifiedarenecessarilythebestavailableforthepurpose.

20220.62030[1,2][3]。近年來，光刻技術(shù)的進(jìn)步在制造最先進(jìn)的半導(dǎo)體方面創(chuàng)造了競(jìng)爭(zhēng)優(yōu)勢(shì)，使得最先進(jìn)的技術(shù)，如人工智能（AI）5G通信和超級(jí)計(jì)算成為[4]。EUV13.5EUV許在半導(dǎo)體中構(gòu)建更小的特征。EUVL1.52019ASMLASML100[5]。迄今為止，ASMLEUVLTwinscanNXE:3400B/CNXE:3600D，NXE20193120221811EUVL（1.1）、國(guó)EUVL（1.2）NISTCHIPS（1.3節(jié)）2EUVL3 EUVEUVL是下一代半導(dǎo)體芯片制造中的關(guān)鍵步驟。EUV光由高純度錫產(chǎn)生的高溫等離3002725（CO2）激光以兩個(gè)連續(xù)EUV光，但由于光學(xué)路徑上的吸收和散射損失，只有一小部分到達(dá)光刻掩模。13.5?相機(jī)測(cè)量推斷得出的。多層收集器鏡系統(tǒng)將光線引導(dǎo)至光敏1NISTpolymer,orphotoresist,whichtransfersapatternontoawafer.ThemirrorsareprotectedfromtindebristhroughaconstantflowofH2gas.Anautomatedwaferstagepositionsthewaferatresolutionsof≤0.25nmaftereachexposure,withacyclicalcheck-adjustprocessoccurring20,000timespersecond.Overall,theprocessrequiresprecisecoordinationbetweenmanydisparateengineeringsystems.Fig.1showsaphotographofanASMLEUVLassembly.Fig.1.PhotographofanASMLEUVLassembly.ImageSource:[5],Photograph: CurrentandFutureStateofEUVGrowthinadvancedsemiconductormanufacturingisoccurringfromnewEUVfabricationfacilitiesintheUSAaswellasEuropeanandAsiancountries.Asmentionedearlier,theonlycompanythatcurrentlymanufacturesEUVLscannerassembliesisASMLbasedintheNetherlands.ASMLsellstheEUVscannerassembliestocompanieslikeIntel,theTaiwan-basedTaiwanSemiconductorManufacturingCompany(TSMC),andtheSouthKorea-basedSamsung.ThesecompaniesthenimplementtheEUVscannersintheirsemiconductorfabricationfacilities.TheEUVLsystemsarenotcreatedsolelyintheNetherlandsbutconsistofmanymodulesdevelopedacrosstheglobethatarethenshippedtoASMLheadquartersintheNetherlandsforfinalassemblyandtestingbeforebeingdeliveredtocustomers.ThereaderisdirectedtoarecentreportbyKhanetal.oftheCenterforSecurityandEmergingTechnologyforfurtherdetails

H2氣體流來防止錫屑污染?！?.25nm20,000?調(diào)整過程。總體而言，該過程需要許多不同的工程系統(tǒng)之間精確的協(xié)調(diào)。圖1ASMLEUVL圖1.ASMLEUVL組裝的照片。圖片來源：[5],照片：ASML EUV光刻的當(dāng)前和未來狀態(tài)EUVEUVLASML。ASML將EUV(TSMC)EUVEUVLASML(CenterforSecurityandEmergingTechnology)Khanthesupplychainimplicationsofasinglesupplierwithinthemicroelectronicsmanufacturingecosystem[6].FromtheUnitedStatesperspective,ASML’sresearch,development,andmanufacturingoftheEUVsourceisstationedinSanDiego,CA.ThesourcecomponentoftheEUVLscannerassemblycanbeseeninFig.2.Itshouldbenotedthatthesourcecomponentsincludethesourcevessel,positionedintheEUVLscannerassembly,plusmanycomponentsbelowthefabricationfloorincludinglasermetrology,beam-transportsystem,andthedrivelaseranditsancillaries.ThesourceworkbeingstationedinSanDiegoisaresultofASMLacquiringCymerin2012toadvancethedevelopmentoftheEUVsourcetechnology[7].Furthermore,giventheadvantageofEUVLforsemiconductormanufacturing,exportcontrolshaverecentlyguardedthetechnology.Specifically,inOctober2022,theUSABureauofIndustryandSecurity(BIS)releasedarule,87FR62186,thatincludesextremeultravioletphotolithography(b.2)[8].Fig.2.GraphicofASML’sEUVLithographysourcecomponents.ImageCredit:ASMLASMLhasstatedthatfuturedevelopmentofEUVlithographyincludesincreasingnumericalaperture(NA)from0.33to0.55(‘High-NA’).TheHigh-NAcanbeusedtoreducethenumberofmulti-patterningstepsrequiredtodayfor0.33NAandleadstoresolvingfinergeometrysizes.Thisisalignedwiththeopenlypublished2022IEEEInternationalRoadmapforDevicesandSystems(IRDS)roadmapandnecessarytocontinuetoscaletransistorsto0.5nmby2037.ThegoalofthenewNAplatformsistoincreasethespeedofwaferandreticlestatestoenablegeometricchipscaling.TheHigh-NAsystemsareexpectedtobeshippedtocustomersin2023,withfullplatformsoftheprocessforhigh-volumemanufacturingexpectedtobeoperationalby2025.Inearly2023ASMLannouncedthattheyhadsettwonewEUVpowerrecordsofaone-hourrunof600WEUVemissionmeetingtheHigh-NAEXE:5200dosestabilityspecificationsand700Winopenloopoperation.The600Wdemonstrationisanincreaseoverthe250WdeliveredfiveyearsbeforeenablingEUVhigh-volumemanufacturing[9].Detailsonthe600WpowerdemonstrationregardingthedropletgeneratorandlaserpowerareincludedinSec.2.1andSec.2.2.AdditionaldetailsonHigh-NAareoutsidethescopeofthisreport.Nevertheless,

[6]從美國(guó)的角度來看，ASMLEUV光源研發(fā)和制造位于圣地亞哥，CA。EUVL掃2EUVL掃描ASML2012Cymer以EUV光源技術(shù)的開發(fā)[7]EUVL在半導(dǎo)體制造中的優(yōu)勢(shì)，最近的出口202210BIS87FR62186b.2[8]。圖2.ASML的EUVASML表示，EUV光刻的未來發(fā)展包括將數(shù)值孔徑（NA）0.33（NA）NA0.33NA2022IEEE（IRDS）路20370.5nmNANA202320252023EUV600WEUVNAEXE:5200700W600W250WEUV9]600W2.12.2NA告的范圍。盡管如此，readerisdirectedtoa2022peer-reviewedpaperbyLevinsonforadditionalthoughtsonthecurrentstatusandoutlookforHigh-NAEUVL[10].UnderstandingtheinternationalanddomesticlandscapeofEUVLaidsinunderstandingresearchanddevelopmentcollaborationopportunities.Furthermore,itunderlinesthecompetitivelandscapeofthetechnologyspaceandthenecessityforscientificleadership.Finally,giventhatCHIPSActfundingistoincreasetheresiliencyofUSAsemiconductormanufacturing,onemustbeawareoftheimportanceofassistingtheproductionofthiskeymanufacturingprocessviabest-in-classmetrologypractices. OverviewofNISTandCHIPSR&DMetrologyDr.MarlaDowell,Ph.D.,M.B.A.,thedirectoroftheCHIPSR&DMetrologyProgramandNISTBoulderLaboratory,providedawelcomekeynoteaddressattheworkinggroupmeeting.ThekeynoteaddressbeganbyremindingtheattendeesofNIST’smission:

Levinson2022High?NAEUVL[10]當(dāng)EUVLCHIPS半導(dǎo)體制造業(yè)的韌性，人們必須意識(shí)到通過一流的計(jì)量實(shí)踐協(xié)助這一關(guān)鍵制造過程的重要性。 NISTCHIPSR&DCHIPSR&D計(jì)量項(xiàng)目及NIST博爾德實(shí)驗(yàn)室的負(fù)責(zé)人MarlaDowell博士、工商管NISTTopromoteU.S.innovationandindustrialcompetitivenessbyadvancingmeasurementscience,standards,andtechnologyinwaysthatenhanceeconomicsecurityandimproveourqualityoflife. TopromoteU.S.innovationandindustrialcompetitivenessbyadvancingmeasurementscience,standards,andtechnologyinwaysthatenhanceeconomicsecurityandimproveourqualityoflife.IthighlightedNIST’scorecompetenciesof(1)measurementscience,(2)rigoroustraceability,and(3)thedevelopmentanduseofstandards.Dr.DowellprovidedadditionalcontextontheCHIPSR&DMetrologyprogrammaticdetails,organizationalrelationships,andnationalresearchfacilitiesatNIST.Dr.DowellemphasizedtheneedforjointresearchbetweenindustryandNISTtocollaborativelysolvepressingmicroelectronicschallengescriticaltoCHIPS.TheaudiencewasremindedthatNISTisanon-regulatorylaboratory.Assuch,NISThasbeenatrustedpartnerofproprietaryinformation;isaneutral,objectivebroker;andpromotesthedevelopmentU.S.innovationandindustrialcompetitiveness.Specifically,intheBoulder,COcampusNISThasabout900staffandover500,000squarefeetoflaboratoryspacethatcoverssixareas,(1)AdvancedCommunicationsTechnologies,(2)QuantumScience&Engineering,(3)Time&FrequencyMetrology(4)AdvancedMaterialsCharacterization(5)PrecisionImaging(6)LasersandOptoelectronics.Dr.DowellthenemphasizedthatNISThasalonghistoryandbroadportfoliooftargetinvestmentsinmicroelectronicsspanningmanyareas.Dr.DowelllatertransitionedtopresentingontheCHIPSforAmericaAct.AnoverviewofthestrategyfortheCHIPSforAmericaFundwasgiven,includinghowitwillsupportthreedistinctinitiatives:(1)Large-scaleinvestmentsinleading-edgemanufacturing.(2)Newmanufacturingcapacityformatureandcurrent-generationchips,newandspecialtytechnologies,andforsemiconductorindustrysuppliers.(3)InitiativestostrengthenU.S.leadershipinR&D.Differentiationwasgivenbetweenthe$39billionincentivesformanufacturingandthe$11billionforR&D,withahighlighttowardstheR&DfundsandtheNISTmeasurementscienceportion

NIST(1)(2)(3)的開發(fā)和使用。DowellCHIPSNISTDowellNISTCHIPSNIST爭(zhēng)力。具體而言，在科羅拉多州博爾德的校區(qū)，NIST90050(1)(2)(3)(4)(5)(6)DowellNIST一代芯片、新技術(shù)和半導(dǎo)體行業(yè)供應(yīng)商建立新的制造能力。(3390110NISTtheappropriation.Dr.Dowelldiscussedhow,throughsevenidentifiedstrategicopportunitiesU.S.semiconductormanufacturing,extensivefeedbackfromstakeholdersacrossindustry,academia,andgovernmentwouldbesoughtinmanyformats,includingeventssuchasthisworkinggroupmeetingforEUVL[11].AnexampleofmetrologyformaterialswasprovidedfromtheCommunicationsTechnologyLaboratory(CTL),wheresheservedastheoperatingunitdirectorbeforebecomingtheCHIPSR&DMetrologyProgramdirector–specificallystandardreferencematerials(SRMs)for5Gmaterials.Asanexampleoftheabilityofmetrologytoenhancethesecurityandprovenanceofmicroelectronic-basedcomponentsandproducts,theNISTSP1278document,whichsheco-authored,washighlighted[12].Toconcludethekeynotepresentation,Dr.DowellinformedtheattendeesoftheNISTpublicationfromAugust2022thatpresentedCHIPS-relatedmetrologyopportunities[13].Additionally,adocumentreleasedthatmorning,April25,2023,byherdepartmentoutlinedavisionandstrategyfortheNationalSemiconductorTechnologyCenter,describinghowfutureinteractionbetweenindustryandNISTcouldoccur[14].Dr.StephanieHooker,Ph.D.,actingdirectorofNIST’sMaterialMeasurementLaboratory(MML),providedakeynoteaddressattheworkinggroupmeetingtowelcomeattendeespriortotheafternoonsessions.Dr.HookerrestatedtheNISTmissionandemphasizedthatNIST’sgreateststrengthisitsreputationofworld-classleadingengineersandscientists.InadditiontosharingNIST’ssizeandcapabilities,afocuswasplacedonthemeasurementservicesthatNISToffers.Themeasurementservicesincludeover1,100StandardReferenceMater