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1、CZ6 Basic flow introduction,Page17,Process Feature,CZ6H process (1P3M)+option layer (MECAP, R-poly, Code P) 0.45um LV(5V) logic technology CZ6H OTP (one time program) process (1P3M)+option layer (MECAP, R-poly) 0.45um LV(5V) logic technology Recess LOCOS(700A) Polycide ex-situ Poly POCl3 Diffusion15

2、00A+WSI 1750A 12/ Ti-silicide Process Metal1(4500Al/100Ti/300TiN), Metal2/3(6200Al/100Ti/300TiN), Metal4(9000Al/100Ti/300TiN), TTOPME(30000Al/100Ti/300TiN) MIP module(0.78fF/um2), HTO 400A RPOLY (500 ohm/square exsitu-Poly) module, 1K, 2K, 5K developed Passivation: CZ6H: 1200TEOS+10K SION +Polyimide

3、 CZ6H OTP: 1200TEOS+10K UVSION,Page17,1.WAFER START 2.OXIDE WET ETCH (LAL800; 3MIN; S/D) - remove native OX 3.AA_OX TOX (900C; 210A) - PAD OX to buffer Nitride stress 4.AA NITRIDE DEP (760C; 1500A 4000 LOCOS)- Suppress OX lateral diffuse LOCOS grown 5.AA PHOTO 6.AA SIN ETCH 7.PR ASH (250C) 8.PR STRI

4、P (SPM+CAPM; NORMAL) 9.FIELD OXIDATION (1100C; 4000A) 10.OXIDE WET ETCH (DHF; 200A) 11.SIN WET ETCH (65MIN) 12.OXIDE WET ETCH (LL130; 2MIN) 13.SAC0_OX (900C; 210A)-protect Si surface from PR contamination and serve as screen OX when N/P well IMP,P SUB,P SUB,LOCOS,Page17,P SUB,5.PW_PH 6.PW_IMP P WELL

5、 IMPLANT 1 B300K100E3A63B32R00(Well Form) PWELL IMPLANT 2 B120K350E2T07W23R00(Channel Stop) PWELL IMPLANT 3 B070K150E2T07W23R00(APT IMP) P WELL IMPLANT 4 B030K175E2T07W23R00(VT adjust) 7.PR ASH 8. PR STRIP (SPM+CAPM; NORMAL),1. NW_PH 2. NW_IMP NWELL IMP 1 P700K150E3A63B32R00 (Well Form) NWELL IMP 2

6、P260K120E2T07W23R00 (Channel Stop) NWELL IMP3 P150K150E2T07W23R00 (APT IMP) NWELL IMP4 B015K185E2T07W23R00 (VT adjust) 3. PR ASH 4.PR STRIP (SPM+CAPM; NORMAL),P SUB,N WELL,P WELL,P WELL,Page17,1.OXIDE WET ETCH (LL130; 90SEC) 2.GATE OXIDATION (850C; 155A) 8.CAP TOP WSI DEP(SPUTTER:2000A) 3.GATE POLY

7、DEP (620C; 1500A; O2 LEAK) 9.CAP TOP OXIDE DEP (APOX; 1200A 4.PHOSPHORUS DIFFUSION 10. CAP PHOTO 5.PSG REMOVE (LL130 4MIN+H2O2 4MIN) 11.CAP_ET 6.GATE WSI DEP (SPUTTER:1750A) 12.CAP PR ASH 7.HTO DEP (400A) 13. PR STRIP (SPM+HAPM; SILICIDE),P SUB,P SUB,N WELL,P WELL,P WELL,MCAP,Page17,14.P1 PHOTO 15.

8、POLY ETCH 16.NLDD IMPLANT,P SUB,P SUB,N WELL,P WELL,P WELL,NMOS,Page17,P SUB,P SUB,N WELL,P WELL,P WELL,1.PLDD PHOTO 2.PLDD IMPLANT 3. PR STRIP 4.SPACER DEP (NSG; 2000A) 5.ANNEAL (950C;30M) 6.SPACER ETCH 7. SAC3 OXIDE DEP,Page17,P SUB,P SUB,N WELL,P WELL,P WELL,1. NP_PH 3. NP_IMP N+ IMPLANT 1 P100K2

9、80E3T45W23R12 N+ IMPLANT 2 P040K120E4T00W23R00 N+ IMPLANT 3 A070K200E5A00B00 4. PR STRIP (SPM; SILICIDE),5. PP_PH 6. PP_IMP P+ IMPLANT 1 B030K200E3T00W23R00 P+ IMPLANT 2 F050K500E5A00B00 7. PR STRIP (SPM; SILICIDE) 8. ANNEAL (850C; 50M),Page17,CODE_PH 6.SALICIDE SPUTTER (TI 330A) CODE IMPLANT P360K3

10、00E3A00B00R00 7. RTA (700C; 30S) PR STRIP (SPM; SILICIDE) 8. BRANSON TREATMENT (CAPM) PRE AMORPHOUS IMPLANT 9. RTA (840C; 10S) OXIDE WET ETCH (LAL30; 3MIN10SEC; SILICIDE) 10. BRANSON TREATMENT (CAPM),P SUB,P SUB,N WELL,P WELL,P WELL,OTP cell,Page17,ILD OXIDE1 DEP (APOX; 1500A) 7. ILD BPSG DEP (B9.8;

11、 P5.4; 13700A) POLY2 DEP 8. PRE-BPSG FLOW (HAPM; SILICIDE) POLY2 IMP 9. BPSG FLOW (800C; 30S) POLY2 PHOTO 10. SIN WET ETCH (15MIN) P2 ETCH 11. SLN244 PRE CMP O2 TREATMENT 6. ILD DEP (SIN 200A) 12. ILD CMP,P SUB,P SUB,N WELL,P WELL,P WELL,RPOLY,Page17,1. CT PHOTO 6. CTNP_PH 2. CT PHOTO UV CURE 7. CTN

12、P_IMP P070K200E5A00B00 3. CT ETCH 8. CT NPLUS PR ASH (140C) 4. PR STRIP (SPM+CAPM; SILICIDE) 9. PR STRIP (SPM+CAPM; SILICIDE) 5. CTPP_IMP F070K500E4A00B00 10. RTA (800C; 10S),P SUB,P SUB,N WELL,P WELL,P WELL,CT,Page17,P SUB,P SUB,N WELL,P WELL,P WELL,CT GULE SPUTTER (TI 300A; TIN 500A) 5.M1 DEP (AL

13、4500A ;TIN 600A) CT GLUE ANNEAL (690C; 30S) 6. M1 PHOTO CT W CVD DEP (475C; 5000A) 7. M1 ETCH CT W ETCH BACK 8. SOLVENT STRIP (SST-A2; 10MIN),Page17,P SUB,P SUB,N WELL,P WELL,P WELL,IMD1 DEP1 (PETEOS; 1200A) IMD1 USG DEP (O3TEOS; 4000A) IMD1 DEP2 (PETEOS; 17000A) IMD1 CMP ALLOY (400C; 10M; H2-N2),M1

14、,Page17,VIA1 PHOTO 7. VIA1 W CVD DEP (5000A) VIA1 ETCH 8. CT W ETCH BACK VIA1 PR ASHING (140C) 9. M2 DEP (TIN 600A; AL 6200A) SOLVENT STRIP (N311; 10MIN) 10. M2 PHOTO VIA1 GLUE LAYER SPUTTER (TI 300A; TIN 1000A) 11. M2 ETCH RTA (700C; 30S) 12. SOLVENT STRIP (SST-A2; 10MIN),M2,Page17,IMD2 DEP1 (PETEOS; 1200A)VIA1 ETCH 10. VIA2 GLUE LAYER SPUTTER (RF300;TI 300A; TIN 1000A) IMD2 USG DEP (O3TEOS; 4000A) 11. VIA2 W CVD DEP (5000A) IMD2 DEP2 (PETEOS; 17000A) 12. VIA2 W ETCH BACK IMD2 CMP 13. TM SPUTTER (TIN 600A; 6200A) ALLOY (400C; 10M; N2) 14.TM PHOTO VIA2 PHOTO 15. TM E

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